Atmel 818
Abstract: atmel 716 5262100 Atmel 514 Atmel 918 Atmel 516 ATMEL 1212 Atmel+516 atmel 602 876-3132
Text: Atmel North American Distributors Alabama ALL AMERICAN SEMICONDUCTOR 4590 Corporate Dr. NW Suite 115D Huntsville, AL 35805 TEL 205 837-1555 FAX (205) 837-7733 ARROW ELECTRONICS 4930F Corporate Dr. Hunstville, AL 35805 TEL (205) 837-6955 FAX (205) 864-3349
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4930F
0412I-3/98
Atmel 818
atmel 716
5262100
Atmel 514
Atmel 918
Atmel 516
ATMEL 1212
Atmel+516
atmel 602
876-3132
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ST ARM CORE 1825 0255
Abstract: 55132-2 REV H
Text: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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transistor fcs 9012
Abstract: No abstract text available
Text: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex®-A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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Untitled
Abstract: No abstract text available
Text: ARM-based Embedded MPU SAMA5D3 Series DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex ® -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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Untitled
Abstract: No abstract text available
Text: AT91SAM ARM-based Embedded MPU SAMA5D3 Series PRELIMINARY DATASHEET Description The Atmel SAMA5D3 series is a high-performance, power-efficient embedded MPU based on the ARM Cortex -A5 processor, achieving 536 MHz with power consumption levels below 0.5 mW in low-power mode. The device features a floating
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AT91SAM
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ATSAM4E8C
Abstract: No abstract text available
Text: SAM4E Series ARM-based Flash MCU DATASHEET Description The Atmel SAM4E series of Flash microcontrollers is based on the highperformance 32-bit ARM Cortex®-M4 RISC processor and includes a floating point unit FPU . It operates at a maximum speed of 120 MHz and features up to
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32-bit
ATSAM4E8C
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Analog-to-Digital Converter in the SAM3S4
Abstract: atmel 938 AT91SAM atmel+938
Text: Analog-to-Digital Converter in the SAM3S4 1. Introduction The purpose of this application note is to describe, from a software point of view while considering analog constraints, correct usage of the ADC implementation in the SAM3S4 series of the Atmel family of Arm , Cortex -M3 based Flash MCUs. The first
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AT91SAM
1106A
01-Jul-11
Analog-to-Digital Converter in the SAM3S4
atmel 938
AT91SAM
atmel+938
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atmel 438
Abstract: Atmel 546 atmel 446 ATMEL 1230 atmel 735 atmel 532 ATMEL 745 ATMEL 920 atmel 1044 ATMEL 1237
Text: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability – Endurance: 104 Cycles
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0554C
06/98/xM
atmel 438
Atmel 546
atmel 446
ATMEL 1230
atmel 735
atmel 532
ATMEL 745
ATMEL 920
atmel 1044
ATMEL 1237
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ATMEL 634
Abstract: ambit rev 4 LSI CMOS GATE ARRAY PO11V5 MH1099 MH1242 705uA
Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TPRAM; Gate Level or Embedded
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5962-01B01
4138F
ATMEL 634
ambit rev 4
LSI CMOS GATE ARRAY
PO11V5
MH1099
MH1242
705uA
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E HEX TO DECIMAL ATMEL 220 dsp radiation hard
Text: Features • • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110K
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
HEX TO DECIMAL
ATMEL 220
dsp radiation hard
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ATMEL 634
Abstract: MH1099 MH1242 PO11V5 dual lvds vhdl
Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)
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5962-01B01
4138G
ATMEL 634
MH1099
MH1242
PO11V5
dual lvds vhdl
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Untitled
Abstract: No abstract text available
Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)
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5962-01B01
4138Gâ
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MH1099
Abstract: MH1242 PO11V5 4138G
Text: Features • • • • • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal System Level Integration Technology Cores on Request SRAM and TRAM (Gate Level or Embedded)
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5962-01B01
4138G
MH1099
MH1242
PO11V5
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A101
Abstract: A201 MH1099E MH1156E MH1242E MH1332E AMI 1108
Text: Features • • • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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20nts
4110H
A101
A201
MH1099E
MH1156E
MH1242E
MH1332E
AMI 1108
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ATMEL 634
Abstract: ambit rev 4 C 828 dual mcga SRAM edac A101 A201 MH1099E MH1156E MH1242E
Text: Features • • • • • • • • • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal System Level Integration Technology Cores on Request Memories: SRAM and TPRAM, Gate Level or Embedded, with EDAC
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4110G
ATMEL 634
ambit rev 4
C 828 dual
mcga
SRAM edac
A101
A201
MH1099E
MH1156E
MH1242E
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ATMEL 745
Abstract: ATMEL 1230 ATMEL 1237 Atmel 546 atmel 1044 atmel 438 CE 2711 atmel 446 atmel 838 atmel 532
Text: Die Products Features • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware Data Protection Features DATA Polling for End of Write Detection High Reliability Endurance: 104 Cycles Data Retention: 10 years
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AOI222
Abstract: AOI2223 AOI222H MH1099 MH1242 0.35-um CMOS standard cell library inverter
Text: Features • High Speed - 170 ps Gate Delay - 2 Input NAND, FO = 2 Nominal • Up to 1.6 Million Used Gates and 596 Pads, with 3.3V, 3V, and 2.5V Libraries • System Level Integration Technology Cores on Request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:
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5962-01B01
4138E
AOI222
AOI2223
AOI222H
MH1099
MH1242
0.35-um CMOS standard cell library inverter
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tristate buffer
Abstract: smd transistor AO HEX TO DECIMAL tristate buffer cmos A101 A201 MH1099E MH1156E PO11F MH1332E
Text: Features • High Speed - 180 ps Gate Delay - 2 Input NAND, FO = 2 nominal • Up to 1.198M Used Gates and 512 Pads with 3.3V, 3V and 2.5V Libraries when Tested to Space Quality Grades • Up to 1.6M Used Gates and 596 Pads with 3.3V, 3V and 2.5V Libraries when Tested to
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4110F
tristate buffer
smd transistor AO
HEX TO DECIMAL
tristate buffer cmos
A101
A201
MH1099E
MH1156E
PO11F
MH1332E
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bsu 479
Abstract: atmel 912 asynchronous RAM atmel 0848 "32K x 32" SRAM 32K 4K x 8 Synchronous Dynamic RAM atmel 0529
Text: ATL25 Memory SRAMs - 1.1 - 08/00 Memory ATL25 0.25µ Compiled Gate Level SRAMs Compiled Gate Level SRAM Loading . 9-2 Common Single Port SRAM Sizes: Table. 9-2
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ATL25
PRAM48X4
bsu 479
atmel 912
asynchronous RAM
atmel 0848
"32K x 32" SRAM
32K 4K x 8 Synchronous Dynamic RAM
atmel 0529
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Transistor Equivalent list po55
Abstract: Structure of D flip-flop DFFSR tristate buffer sis 968 PO-44Z PRU11 AC/DC drive nec 78054 PO22 tristate buffer cmos
Text: Features • High Speed - 180 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.198 M Used Gates and 512 Pads with 3.3 V, 3V and 2.5V libraries when tested to space quality grades • Up to 1.6M Used Gates and 596 Pads with 3.3 V, 3V and 2.5V libraries when tested to
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PO88
Abstract: ttl buffer AOI222 AOI2223 AOI2223H AOI222H MH1099 MH1242 PRD21 PRD29V5
Text: Features • High Speed - 170 ps Gate Delay - 2 input NAND, FO=2 nominal • Up to 1.6 Million Used Gates and 596 pads, with 3.3V, 3V, and 2.5V libraries • System Level Integration Technology Cores on request: SRAM and TRAM (Gate Level or Embedded) • I/O Interfaces:
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250MHz
220MHz
800MHz
5962-01B01
PO88
ttl buffer
AOI222
AOI2223
AOI2223H
AOI222H
MH1099
MH1242
PRD21
PRD29V5
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ATMEL 1230
Abstract: ATMEL 1237 at28hc256 die
Text: Features • • • • • • • • • • • • • High Performance CMOS Technology Low Power Dissipation - Active and Standby Hardware and Software Data Protection Features DATA Polling for End of Write Detection High Reliability - Endurance: 104 Cycles
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OCR Scan
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0554C
06/98/xM
ATMEL 1230
ATMEL 1237
at28hc256 die
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HT12E HT12D
Abstract: Panasonic RELAY Cross Reference NEC OMRON N80C196KC16 MOS248 TDA2086A GOULD 500 COLOUR LCD DIGITAL STORAGE OSCILLOSCOPE 1NA114AP ICM72171 SL443A nec matrix Vacuum tube display
Text: Issued July 1996 021-928 Data Packs A-K RS data sheet/semiconductor manufacturers data sheet index Data Sheet Introduction RS data sheets form a unique source of detailed information regarding technical specifications, absolute maximum ratings and applications for engineers and designers working with RS products.
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static SRAM single port
Abstract: al5b ATMEL 910 din 74 ATL35 PRAM12X32R1W1
Text: ATL35 Memory SRAMs-1.2-04/99 Memory ATL35 0.35µ Compiled Gate Level SRAMs Compiled Gate Level SRAM Loading . 9-2 Common Single Port SRAM Sizes: Table. 9-2
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ATL35
PRAM48X4
PRAM32x36R1W1)
static SRAM single port
al5b
ATMEL 910
din 74
PRAM12X32R1W1
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