Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    AUG11 Search Results

    SF Impression Pixel

    AUG11 Price and Stock

    3M Interconnect AUG11C02AB20

    BETAPURE AU SERIES FILTER CAPSUL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUG11C02AB20 Bulk 1
    • 1 $2840.02
    • 10 $2840.02
    • 100 $2840.02
    • 1000 $2840.02
    • 10000 $2840.02
    Buy Now

    Foryard FYS-5211AUG-11

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Maritex FYS-5211AUG-11 582
    • 1 $0.228
    • 10 $0.221
    • 100 $0.206
    • 1000 $0.194
    • 10000 $0.194
    Buy Now

    AUG11 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: High Definition MUSA VJF1224HDM FEATURES • Enhanced performance  Standard MUSA compatibility  Choice of panel colours Our Musa connectors have been redesigned to give improved performance up to 3 Gbit/s. Return loss is better than –15dB up to 1.5Ghz and better than –10dB up to 3Ghz as required by SMPTE424M.


    Original
    VJF1224HDM SMPTE424M. 1080P CuZn39Pb2 Aug-11 PDF

    l1117 18

    Abstract: l1117 1.2 L1117 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18
    Text: NIKO-SEM 1A Fixed and Adjustable Low Dropout Linear Regulator LDO L1117 Series SOT-223, TO-252, TO-220,TO-263 GENERAL DESCRIPTION FEATURES The L1117 Series are positive and low dropout three-terminal voltage regulators with 1A output current capability. These devices


    Original
    L1117 OT-223, O-252, O-220 O-263 OT-223 O-252 l1117 18 l1117 1.2 L1117 33 l1117 g L1117-3.3 L1117-1.8 l111718 voltage regulator l1117 L1117-18 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDD 38F2000 5SDD 38F2000 Old part no. DV 818-3800-20 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 000 I FAVm = 3 730 I FSM = 34 000 V TO = 0.915


    Original
    38F2000 1768/138a, DV/158/05a Aug-11 Aug-11 PDF

    ABB thyristor

    Abstract: thyristor ABB pt 2399
    Text: 5STR 07F2541 5STR 07F2541 Old part no. TP 918F-675-25 Reverse Conducting Thyristor Properties Integrated freewheeling diode Optimized for low dynamic losses Applications Traction Key Parameters V DRM = I TAVm = I TSM = V TO = rT = tq = 2500 760 14 000 1.391


    Original
    07F2541 918F-675-25 07F2541 1768/138a, TP/174/05a Aug-11 ABB thyristor thyristor ABB pt 2399 PDF

    dt 92 abb

    Abstract: No abstract text available
    Text: 5SDD 36K5000 5SDD 36K5000 Old part no. DV 889B-3600-50 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Explosive protection Key Parameters V RRM = 5 000 I FAVm = 3 638


    Original
    36K5000 889B-3600-50 1768/138a, DV/211/06a Aug-11 dt 92 abb PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDF 04D4504 5SDF 04D4504 Old part no. DM 827-360-45 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 4 500 I FAVm = 361 I FSM = 6 000 V TO = 1.858 rT


    Original
    04D4504 1768/138a, DM/219/06a Aug-11 04D4504A Aug-11 PDF

    5SDD31H6000

    Abstract: No abstract text available
    Text: 5SDD 31H6000 5SDD 31H6000 Old part no. DV 889-3300-60 High Voltage Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 6 000 I FAVm = 3 246 I FSM = 40 000 V TO


    Original
    31H6000 1768/138a, DV/259/08b Aug-11 Aug-11 5SDD31H6000 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR89. Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion


    Original
    BAR89. BAR89-02L BAR89-02LRH BAR89-02LRH* BAR89-02L, BAR89-02LRH, PDF

    Untitled

    Abstract: No abstract text available
    Text: BAR89.E6816 Hitachi Silicon PIN Diode • Optimized for antenna switches in hand held applications • Very low capacitance at zero volts reverse bias at frequencies above 1 GHz typ. 0.19 pF • Low forward resistance (typ. 0.8Ω @ IF = 10mA) • Very low signal distortion


    Original
    BAR89. E6816 BAR89-02L BAR89-02LRH BAR89-02LRH* BAR89-02L, Aug-11-2004 PDF

    5SDF06D2504

    Abstract: abb 800
    Text: 5SDF 06D2504 5SDF 06D2504 Old part no. DM 827-620-25 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 2 500 I FAVm = 615 I FSM = 10 000 V TO = 1.196


    Original
    06D2504 1768/138a, DM/267/08a Aug-11 06D250A Aug-11 5SDF06D2504 abb 800 PDF

    5sdd24f2800

    Abstract: No abstract text available
    Text: 5SDD 24F2800 5SDD 24F2800 Old part no. DV 818-2480-28 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 2 800 I FAVm = 2 596 I FSM = 30 000 V TO = 0.906


    Original
    24F2800 1768/138a, D/059/02c Aug-11 Aug-11 5sdd24f2800 PDF

    5SDD48H3200

    Abstract: No abstract text available
    Text: 5SDD 48H3200 5SDD 48H3200 Old part no. DV 889-4650-32 Rectifier Diode Properties Industry standard housing Suitable for parallel operation High operating temperature Low forward voltage drop Key Parameters V RRM = 3 200 I FAVm = 4 708 I FSM = 61 000 V TO = 0.992


    Original
    48H3200 1768/138a, DV/197/06b Aug-11 Aug-11 5SDD48H3200 PDF

    5SDF12F3005

    Abstract: dm265 12F3
    Text: 5SDF 12F3005 5SDF 12F3005 Old part no. DM 818-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195


    Original
    12F3005 12F3005 12F2505 1768/138a, DM/265/08a Aug-11 Aug-11 5SDF12F3005 dm265 12F3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5SDD 20F5000 5SDD 20F5000 Old part no. DV 818-2000-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 978 I FSM = 24 000 V TO = 0.940 rT = 0.284 low forward voltage drop low recovery charge high operating temperature low leakage current


    Original
    20F5000 1768/138a, D/052/01c Aug-11 Aug-11 PDF

    827C-800-50

    Abstract: No abstract text available
    Text: 5SDD 08T5000 5SDD 08T5000 Old part no. DV 827C-800-50 Rectifier Diode Properties Key Parameters V RRM = 5 000 I FAVm = 1 028 I FSM = 12 000 V TO = 0.894 rT = 0.487 low forward voltage drop low recovery charge high operating temperature low leakage current


    Original
    08T5000 827C-800-50 1768/138a, DV/275/08a Aug-11 Aug-11 PDF

    5SDF12T3005

    Abstract: No abstract text available
    Text: 5SDF 12T3005 5SDF 12T3005 Old part no. DM 818C-1200-30 Fast Recovery Diode Properties Optimized recovery characteristics Industry standard housing Applications suited for GTO applications Key Parameters V RRM = 3 000 I FAVm = 1 256 I FSM = 19 000 V TO = 1.195


    Original
    12T3005 818C-1200-30 12T3005 12T2505 1768/138a, DM/266/08a Aug-11 5SDF12T3005 PDF

    845i

    Abstract: No abstract text available
    Text: 5SDD 09D6000 5SDD 09D6000 Old part no. DV 827-850-60 High Voltage Diode Key Parameters V RRM = 6 000 I FAVm = 845 I FSM = 11 000 V TO = 0.893 rT = 0.647 Properties Low forward voltage drop Low recovery charge High operating temperature Low leakage current


    Original
    09D6000 1768/138a, DV/261/08a Aug-11 Aug-11 845i PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original
    BFP620 VPS05605 OT343 Aug-11-2004 PDF

    Untitled

    Abstract: No abstract text available
    Text: BFP620 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz


    Original
    BFP620 VPS05605 OT343 PDF

    Untitled

    Abstract: No abstract text available
    Text: Data sheet, Rev. 2.1, Sept. 2011 6ED003L02-F Integrated 3 Phase Gate Driver Special Power IC – Drivers N e v e r s t o p t h i n k i n g 6ED003L02-F Integrated 3 Phase Gate Driver 6ED003L02-F Revision History: Previous Version: Page 6 2011-08 Rev. 2.1 2.1


    Original
    6ED003L02-F Aug-11 PDF

    AK8125AV

    Abstract: AK8125A
    Text: AK8125AV Spread Spectrum Clock Generator AK8125AV Features Description Input Frequency: - Crystal: 6.1-36MHz - External: 6.1- 49.92MHz Configurable Spread Spectrum Modulation: The AK8125A is a spread spectrum clock generator designed for general purpose EMI


    Original
    AK8125AV 1-36MHz 92MHz 30KHz AK8125A 10-pin MS1257-E-01 Aug-11 AK8125AV PDF

    YC-160R

    Abstract: cn1e JST B4P-VH
    Text: • Medical & ITE Certifications • BF Rated • Very Low 1" profile • Industry Standard Footprint • Up to 89% Efficient • <0.3W Off-load Power Draw Key Market Segments & Applications Medical MWS65 Series Test & Measurement Point of Sale Datacom 2 x 4” 55 to 67W AC-DC Power Supplies


    Original
    MWS65 230VAC) Aug11 YC-160R cn1e JST B4P-VH PDF

    Untitled

    Abstract: No abstract text available
    Text: NOTES: I MATERIALS TH 1 RD AND - PTFE COPPER 4. 5. R E V 1S I O N S ^ PLATED MI N . 00C THICK ALLOY, NICKEL A RELEASE PLATED THICK) (.000100 DIM WA S 1.65; 7 WA S DIM. A. TEMPERATURE RANGE: -40° C PACKAGING: A. Q U A N T I T Y : S I N G L E PACK B. MARKI NG:


    OCR Scan
    -Aug-11 PDF

    SI-52003-F

    Abstract: 52003
    Text: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED OR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. RoHS 2002/95/EC, ELECTRICAL CHARACTERISTICS 2 5 'C 1.0 TURNS RATIO: P1—P3 :(J1—J2)


    OCR Scan
    350uH 100KHz, 2002/95/EC. Aug-11-2008 10/100BT, SI-52003-F SI-52003-F 52003 PDF