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    AUIRFR1018E Price and Stock

    Infineon Technologies AG AUIRFR1018E

    MOSFET N-CH 60V 56A DPAK
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    DigiKey AUIRFR1018E Tube
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    Infineon Technologies AG AUIRFR1018ETRL

    Trans MOSFET N-CH 60V 79A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: AUIRFR1018ETRL)
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    Avnet Americas AUIRFR1018ETRL Reel 3,000
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    EBV Elektronik AUIRFR1018ETRL 27 Weeks 3,000
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    International Rectifier AUIRFR1018E

    AUTOMOTIVE GRADE HEXFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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    ComSIT USA AUIRFR1018E 1,950
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    AUIRFR1018E Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    AUIRFR1018E International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 79A DPAK Original PDF
    AUIRFR1018ETRL International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 79A DPAK Original PDF

    AUIRFR1018E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN-994

    Abstract: AUIRFR1018E P-Channel MOSFET 600v
    Text: PD - 97685 AUTOMOTIVE GRADE AUIRFR1018E HEXFET Power MOSFET Features ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching


    Original     		AUIRFR1018E AN-994 AUIRFR1018E P-Channel MOSFET 600v PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 97685 AUTOMOTIVE GRADE AUIRFR1018E HEXFET Power MOSFET Features ● ● ● ● ● ● ● VDSS RDS on typ. max. ID (Silicon Limited) ID (Package Limited) D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching


    Original     		AUIRFR1018E PDF