TC701
Abstract: transistor RJH 30 nokia production line ausi die attach
Text: Novel Material for Improved Quality of RF-PA in Base-Station Applications Co-Authored by Nokia Research Center and Freescale Semiconductor Presented at 10th International Workshop on THERMal INvestigations of ICs and Systems 29 September – 1 October 2004
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FIN-00045,
TC701
transistor RJH 30
nokia production line
ausi die attach
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AuSn eutectic
Abstract: wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER
Text: Application Note AN-008 Die Attach and Bonding Recommendations Introduction While Nitronex’s core market is packaged RF products, we sell die to select customers for use in modules and subsystems. One benefit of Nitronex GaN devices is they are fabricated on industry standard silicon wafers so
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AN-008
AuSn eutectic
wire bond recommendations
Die Attach and Bonding Guidelines
Gan on silicon transistor
Gan on silicon substrate
AN008
DIE BONDER
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LND1
Abstract: No abstract text available
Text: LND1 Die Specifications LND1 G D S Backside: Source All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width LND1 30 30 Thickness 11 ± 1.5 Backside Metal Au Material Al-Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.
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solid solubility
Abstract: chemical control process block diagram
Text: Component Assembly Technology 3.1 3 Introduction The packaging technologies used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity
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VF22
Abstract: No abstract text available
Text: VF22 Die Specifications VF22 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF22 105 70 Thickness 11 ± 1.5 Backside Metal Au Material Al-Si Notes: 1. Maximum values 2. Standard Au back is alloyed for optimum eutectic die attach. Ag backing is optional.
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gold metal detectors
Abstract: soft solder die bonding schematic diagram intel atom INCOMING RAW MATERIAL INSPECTION lead side brazed hermetic X-RAY INSPECTION ausi die attach electrical three phase schematic riser DIAGRAM epoxy adhesive paste cte table intel 24008
Text: 2 3 Component Assembly Technology 1/22/97 9:49 AM CH03WIP.DOC INTEL CONFIDENTIAL until publication date 2 CHAPTER 3 COMPONENT ASSEMBLY TECHNOLOGY 3.1. INTRODUCTION The packaging technologies used to manufacture or assemble Intel’s three basic types of
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CH03WIP
gold metal detectors
soft solder die bonding
schematic diagram intel atom
INCOMING RAW MATERIAL INSPECTION
lead side brazed hermetic
X-RAY INSPECTION
ausi die attach
electrical three phase schematic riser DIAGRAM
epoxy adhesive paste cte table
intel 24008
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Alumina ceramic AI203
Abstract: ausi die attach gold metal detectors AI203 gold melting furnace pressure low die attach spot welding schematics ausi die attach thin silicon die Dissolve Oxygen ceramic pin grid array package wire bond
Text: Alumina & Leaded Molded Technology 3 3.1 Introduction The packaging technologies used to manufacture or assemble three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity
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gold metal detectors
Abstract: epoxy adhesive paste cte table 28 pin ic base socket round pin type lead spot welding schematics soft solder die bonding electrical three phase schematic riser DIAGRAM CERAMIC PIN GRID ARRAY wire lead frame ausi die attach thin silicon die soft solder wire dispensing 10 k ntc thermistor
Text: Component Assembly Technology 3.1 3 Introduction The packaging technologies used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter. The package families, described in Chapter 1, provide the functional specialization and diversity
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Ultrasonic Cleaning Transducer
Abstract: Ultrasonic welding circuit diagram gold metal detectors ultrasonic transducer cleaning bath Ultrasonic nozzle schematic ultrasonic motion detector gold detectors circuit INCOMING RAW MATERIAL INSPECTION soft solder wire dispensing soft solder die bonding
Text: CHAPTER 3 IC ASSEMBLY TECHNOLOGY INTRODUCTION The material and process technology steps used to manufacture or assemble Intel’s three basic types of component packages are summarized in this chapter The package families described in Chapter 1 provide the functional specialization and diversity required by our customers Material and construction attributes of individual family
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ausi die attach
Abstract: No abstract text available
Text: LP07 Die Specifications LP07 G D Backside Potential: Drain6 All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width LP07 50 70 Thickness 11 ± 1.5 Backside Metal None Material Al-Si Notes: 1. Maximum values
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soft solder die bonding
Abstract: die bond VF-03 eutectic
Text: Die Specifications VF03 G S All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF03 146 118 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Cu-Si 15 x 20 Al 5 Au-Si Eutectic
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VF13
Abstract: No abstract text available
Text: VF13 Die Specifications VF13 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF13 30 30 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Si 4x4
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Untitled
Abstract: No abstract text available
Text: VF26 Die Specifications VF26 S G Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF26 70 70 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Si 4 x 6.25
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Untitled
Abstract: No abstract text available
Text: VF05 Die Specifications VF05 G S Backside: Drain All dimensions in mils. Bonding Pads3 Dimensions Recommended Assembly Material 2 Die Geometry Length1 Width VF05 43 41 Thickness Backside Metal Material Size Wire4 Wire Size4 Preform5 11 ± 1.5 Au Al-Si 5x5
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80021
Abstract: SLD1000
Text: Preliminary SLD1000 Product Description The SLD1000 is a 3.5W high performance LDMOS transistor die, designed for operation from 300MHz to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD1000 is typically used
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SLD1000
300MHz
2700MHz.
SLD1000
EDS-104291
AN-039
80021
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Untitled
Abstract: No abstract text available
Text: LOW CURRENT 2-8 GHz WIDE-BAND AMPLIFIER UPG110B-L UPG110P-L NOT RECOMMENDED FOR NEW DESIGN FEATURES_ POWER GAIN vs. FREQUENCY . LOW CURRENT: 60 mA TYP • WIDE-BAND: 2 to 8 GHz VDC - 8 \ / 100 - 6 0 nA • HIGH GAIN: 13 dB at f = 2 to 8 GHz
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UPG110B-L
UPG110P-L
UPG110B
UPG100P,
UPG102P
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UPG702B
Abstract: UPG702
Text: NEC UPG702B UPG702P 3-INPUT OR/NOR GATE FEATURES OUTLINE DIMENSIONS • LOGIC LEVELS AND SUPPLY VOLTAGES ECL COMPATIBLE Units in mm OUTLINE H16 • HIGH SPEED (Operating Clock Frequency beyond 2 GHz) • HERMETICALLY SEALED PACKAGE ASSURES HIGH RELIABILITY
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UPG702B
UPG702P
16-pin
UPG702
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c 3421 transistor
Abstract: GSRU20040 2n6924 gsru200 2N2891
Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .
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MIL-STD-750,
MIL-STD-883C,
c 3421 transistor
GSRU20040
2n6924
gsru200
2N2891
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L3010
Abstract: UPG110B
Text: 2-8 GHz WIDE-BAND AMPLIFIER ~ p ~ ^ jj“ POWER GAIN vs. FREQUENCY FEATURES_ • WIDE-BAND: 2 to 8 GHz VDO - 8 ' / IDD • 6 0 tiA • HIGH GAIN: 15 dB at f = 2 to 8 GHz • MEDIUM POWER : +14 dBm TYP at f = 2 to 8 GHz • INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Si
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UPG110B
UPG11
UPG110P
UPG100P,
UPG102P
L3010
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6802P
Abstract: 6809P HD6809P HD6802P HD6802
Text: RELIABILITY T E S T D A T A OF M ICR O CO M PU TER 2. PACKAGE AND CHIP STRUCTURE 2.1 Package The reliability o f plastic m olded type has been greatly im proved, recently their applications have been expanded to au to m obiles m easuring and co n tro l system s, and co m p u ter term inal
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16-bit
6802P
6809P
HD6809P
HD6802P
HD6802
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Untitled
Abstract: No abstract text available
Text: LOW NOISE WIDE-BAND AMPLIFIER UPG100B UPG1 OOP FEATURES POWER GAIN AND NOISE FIGURE VS. FREQUENCY ULTRA W IDE BAND: 50 MHz to 3 GHz 10 LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz INPUT/OUTPUT IMPEDANCE MATCHED TO 50 f t HERMETIC SEALED PACKAGE ASSURES HIGH
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UPG100B
UPG100P
UPG100
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mosfet high power rf ldmos
Abstract: mosfet 303 AN-039 80021
Text: Preliminary SLD2000 Product Description The SLD2000 is a 10W high performance LDMOS transistor die, designed for operation from 300MHz to 2700MHz. It is an excellent solution for applications requiring high linearity and efficiency. The SLD2000 is typically used
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SLD2000
300MHz
2700MHz.
SLD2000
EDS-104292
SLD-2000
AN-039
mosfet high power rf ldmos
mosfet 303
80021
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bf08
Abstract: UPG501B UPG501P prescaler ghz
Text: NEC 5 GHz DIVIDE-BY-4 STATIC PRESCALER FEATURES OUTLINE DIM ENSIONS • W ID E O PERATIN G FREQ UENC Y RANGE: fiN = 1.5 G Hz to 5 G Hz Ta = 25°C • SIN G LE SU PPLY VO LTAG E : V dd = + 10 UPG501B UPG501P (Units in mm) OUTLINE BF08 V 1.7 MAX • D IV IS IO N RATIO OF 4
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UPG501B
UPG501P
UPG501B/P
UPG501B,
bf08
UPG501P
prescaler ghz
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101P
Abstract: 103P UPG100P UPG110B UPG110P ausi die attach
Text: NEC 2-8 GHz WIDE-BAND AMPLIFIER UPG110B UPG110P FEATURES ABSOLUTE MAXIMUM RATINGS u - 25°c> • W IDE-BAND: 2 to 8 GHz SYMBO LS • HIG H GAIN: 15 dB TYP at f = 2 1o 8 GHz • M EDIUM POWER: + 14 dBm TYP @ f = 2 to 8 GHz • IN P U T /O U TP U T IM PEDAN CE M ATCHED TO 50 i l
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UPG110B
UPG110P
101P
103P
UPG100P
UPG110P
ausi die attach
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