Untitled
Abstract: No abstract text available
Text: Bergquist Thermal Clad Technical Data MP-06503 MULTI-PURPOSE DIELECTRIC Benefits • Thermal resistance 0.09°Cin2/W (0.58°Ccm2/W) • Thermal conductivity of 1.3 W/m-K • Multi-Purpose applications • Lead-free solder compatible • Eutectic AuSn compatible
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MP-06503
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Untitled
Abstract: No abstract text available
Text: ADL-80Q11CZ AlGaAs Infrared Laser Diode DATE：2008/09/08 Ver 1.0 ★808nm 1W C-Mount PKG • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity Cathode tab (-) Alumina Insulator
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ADL-80Q11CZ
808nm
divers-vis/ari/808nm/
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Untitled
Abstract: No abstract text available
Text: ADL-63V05CZ AlGaInP Red Laser Diode ★635nm 0.5W 30 oC C-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity 6. Small aspect ratio
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ADL-63V05CZ
635nm
divers-vis/ari/635nm/
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AuSn eutectic
Abstract: AN3017 k-242 305O self-aligned AuSn solder
Text: Procedure for Multifunction Self-Aligned Gate MSAG AuSn Eutectic Solderability 1. AN3017 Rev — Introduction The following procedure is M/A-COM’s recommended instruction for eutecticly attaching die to pedestals 2. Materials/Supplies 2.1 The following are materials and supplies required to perform eutectic soldering.
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AN3017
AuSn eutectic
AN3017
k-242
305O
self-aligned
AuSn solder
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tanaka TS3332LD epoxy
Abstract: tanaka TS3332LD TS3332LD tanaka epoxy remix capacitors Die Attach epoxy stamping tanaka free circuit diagram of rf id Broadband Amplifiers Application Notes, appendix 3 Thermal Epoxy
Text: Epoxy Die Attach Considerations for HPA MMICs 1 Scope MMICs have been traditionally mounted on a RF circuit board, or directly to a plated metal carrier, using a wide range of conductive epoxies, or eutectic solder (e.g. AuGe, AuSn). Eutectic and epoxy has been used in both
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Untitled
Abstract: No abstract text available
Text: ADL-63V06CZ AlGaInP Red Laser Diode DATE：2008/10/16 Ver 2.0 o ★635nm 0.5W 30 C CT-Mount PKG with Fast Axis Collimation lens • Features 1. High power 2. High brightness 3. Long lifetime AuSn eutectic process 4. Narrow spectral line-width 5. High polarization purity
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ADL-63V06CZ
635nm
divers-vis/ari/635nm/
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AuSn solder
Abstract: No abstract text available
Text: V i s h ay I n t e rt e c h n olog y, I n c . I INNOVAT AND TEC O L OGY AuSn Series N HN LASER DIODE SUBSTRATE MOUNTS O 19 62-2012 Resistors - Deposited Gold Tin Thin Film Patterned Substrates with Deposited Gold/Tin Pads Key Benefits • • • • • •
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VMN-PL0464-1202
AuSn solder
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DA3547
Abstract: AuSn eutectic ausn submount
Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
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DA3547TM
CxxxDA3547-Sxxx00
DA3547
AuSn eutectic
ausn submount
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA3547 LEDs CxxxDA3547-Sxxx00 Data Sheet Cree’s Direct Attach DA3547 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value
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DA3547â
CxxxDA3547-Sxxx00
DA3547
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Untitled
Abstract: No abstract text available
Text: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA1000â
CxxxDA1000-Sxx000
DA1000
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Abstract: No abstract text available
Text: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA1000â
CxxxDA1000-Sxx000
DA1000
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Abstract: No abstract text available
Text: Direct Attach DA700 LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly eficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA700â
CxxxDA700-Sxx000
DA700
DA700
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DA700
Abstract: OS4000
Text: Direct Attach DA700 LEDs CxxxDA700-Sxx000 Data Sheet Cree’s Direct Attach DA700 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA700TM
CxxxDA700-Sxx000
DA700
OS4000
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DA1000
Abstract: No abstract text available
Text: Direct Attach DA1000 LEDs CxxxDA1000-Sxx000 Data Sheet Cree’s Direct Attach DA1000 LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree’s proprietary device technology and silicon-carbide substrates to deliver superior value for
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DA1000TM
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405nm LED
Abstract: C470-XB900-A C470-XB900-B xbt-m silicon carbide LED cree bonding wire cree Au Sn eutectic C405-XB900-A C405-XB900-B CXXX-XB900-X
Text: G•SiC Technology XBright Power Chip LED CXXX-XB900-X ® The Leader in Silicon Carbide Solid State Technology Features Applications • XBright™ Technology • General Lighting • Larger “Power Chip” Design • White LEDs • High Performance
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CXXX-XB900-X
405nm)
470nm)
OS1600
405nm LED
C470-XB900-A
C470-XB900-B
xbt-m
silicon carbide LED cree
bonding wire cree
Au Sn eutectic
C405-XB900-A
C405-XB900-B
CXXX-XB900-X
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AuSn solder
Abstract: No abstract text available
Text: TGA2501-TS 6 - 18 GHz 2.8 Watt Power Amplifier Key Features and Performance • • • • • • • Preliminary Measured Performance Bias Conditions: VD = 8 V ID = 1.2 A 34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss
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TGA2501-TS
18Ghz,
0007-inch
AuSn solder
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flux-eutectic
Abstract: UP78 silicon carbide LED Alpha Metals
Text: XBright & XThin® Au/Sn Die Attachment Recommendations XBright and XThin LEDs are the latest generation of solid-state light emitting diodes available from Cree. XBright and XThin chips use a geometrically shaped Epi-down chip design combined with InGaN epitaxy and Cree’s proprietary
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CPR3AN01
flux-eutectic
UP78
silicon carbide LED
Alpha Metals
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AuSn eutectic
Abstract: wire bond recommendations Die Attach and Bonding Guidelines Gan on silicon transistor Gan on silicon substrate AN008 DIE BONDER
Text: Application Note AN-008 Die Attach and Bonding Recommendations Introduction While Nitronex’s core market is packaged RF products, we sell die to select customers for use in modules and subsystems. One benefit of Nitronex GaN devices is they are fabricated on industry standard silicon wafers so
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AN-008
AuSn eutectic
wire bond recommendations
Die Attach and Bonding Guidelines
Gan on silicon transistor
Gan on silicon substrate
AN008
DIE BONDER
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Untitled
Abstract: No abstract text available
Text: TGA2502 13 - 15 GHz 4W Power Amplifier Key Features • • • • • • 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
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TGA2502
Abstract: 9948465 21A 8 BALL
Text: TGA2502 13 - 15 GHz 4W Power Amplifier Key Features • • • • • • 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm
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TGA2502
TGA2502
9948465
21A 8 BALL
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TGA1073B-SCC
Abstract: No abstract text available
Text: Product Datasheet February 13, 2001 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA
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TGA1073B-SCC
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0007-inch
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Untitled
Abstract: No abstract text available
Text: TGA2501-TS 6 - 18 GHz 2.8 Watt Power Amplifier Key Features and Performance • • • • • • • Preliminary Measured Performance Bias Conditions: VD = 8 V ID = 1.2 A 34.5 dBm Midband Pout 24 dB Nominal Gain 10 dB Typical Input Return Loss 5 dB Typical Output Return Loss
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TGA2501-TS
TGA2501-TS
18Ghz,
TGA2501
0007-inch
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Untitled
Abstract: No abstract text available
Text: Product Datasheet January 17, 2005 27- 32 GHz 0.7 Watt Power Amplifier TGA1073B-SCC Key Features and Performance • • • • • • 0.25 um pHEMT Technology 25 dB Nominal Gain @ 28 GHz 28.5 dBm Nominal Pout @ P1dB 7V -38 dBc IMR3 @ 18 dBm SCL Bias 6 - 8 V @ 420 mA
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0007-inch
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WIRE SHEAR PULL MIL-STD
Abstract: Mil-Std-883 Wire Bond Pull Method 2011 PH25
Text: Application Note UMS GaAs Wafer Acceptance Tests This application note describes the tests performed by UMS in order to control and guarantee the overall quality of the GaAs MMIC wafers, prior to the individual chip measurement and individual visual inspection. These wafer acceptance tests consist in a
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ANWAT9137
04-JAN-00
WIRE SHEAR PULL MIL-STD
Mil-Std-883 Wire Bond Pull Method 2011
PH25
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