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    AVALANCHE Search Results

    AVALANCHE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation
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    AVALANCHE Price and Stock

    Vishay Intertechnologies BYG10Y-E3/TR

    Rectifiers 1.5 Amp 1600 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BYG10Y-E3/TR Reel 79,200 1,800
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    Vishay Intertechnologies BYG20J-E3/TR

    Rectifiers 1.5 Amp 600 Volt
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BYG20J-E3/TR Reel 77,400 1,800
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    • 10000 $0.082
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    Vishay Intertechnologies BYG22D-E3/TR

    Rectifiers 2.0 Amp 200 Volt 14
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BYG22D-E3/TR Reel 61,200 1,800
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    Vishay Intertechnologies BYG23T-M3/TR

    Rectifiers 1A 1300V High Volt Ultrafast
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI BYG23T-M3/TR Reel 59,400 1,800
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    Vishay Intertechnologies 1N5062TR

    Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 1N5062TR Reel 50,000 5,000
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    Find more AVALANCHE price and stock on Findchips.com

    AVALANCHE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CSD17510Q5A www.ti.com SLPS271G – JULY 2010 – REVISED SEPTEMBER 2012 30V, N-Channel NexFET Power MOSFETs Check for Samples: CSD17510Q5A PRODUCT SUMMARY FEATURES 1 • • • • • • • 2 Ultralow Qg and Qgd Low Thermal Resistance Avalanche Rated


    Original     		CSD17510Q5A SLPS271G PDF

    Untitled

    Abstract: No abstract text available
    Text: CSD19535KCS www.ti.com SLPS484 – JANUARY 2014 CSD19535KCS, 100 V N-Channel NexFET Power MOSFET Check for Samples: CSD19535KCS FEATURES 1 • • • • • • • 2 Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating


    Original     		CSD19535KCS SLPS484 CSD19535KCS, O-220 PDF

    ndf02n60zg

    Abstract: NDD02N60ZT4G NDD02N60Z g1Dv ndf02n60 NDF02N60Z 60ZG
    Text: NDF02N60Z, NDD02N60Z N-Channel Power MOSFET 600 V, 4.8 W Features • • • • • Low ON Resistance Low Gate Charge ESD Diode−Protected Gate 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com


    Original     		NDF02N60Z, NDD02N60Z 22-A114) NDF02N60Z/D ndf02n60zg NDD02N60ZT4G g1Dv ndf02n60 NDF02N60Z 60ZG PDF

    M0139-01

    Abstract: M0137-02 P0093-01
    Text: CSD16410Q5A www.ti.com SLPS205A – AUGUST 2009 – REVISED MAY 2010 N-Channel NexFET Power MOSFETs Check for Samples: CSD16410Q5A FEATURES 1 • • • • • • • 2 Ultra Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb Free Terminal Plating


    Original     		CSD16410Q5A SLPS205A M0139-01 M0137-02 P0093-01 PDF

    STPS2L60U

    Abstract: "Schottky Rectifiers" schottky diode SMB marking code 120 DO-221 ecopack2 Diode SMB marking code 14
    Text: STPS2L60 Power Schottky rectifier Features • Negligible switching losses ■ Low forward voltage drop ■ Surface mount miniature package ■ Avalanche capability specified ■ ECOPACK2 compliant component SMB flat A K DO-41 STPS2L60 Description Axial and surface mount power Schottky rectifiers


    Original     		STPS2L60 DO-41 DO221-AA) STPS2L60UF DO-214AC) STPS2L60A STPS2L60U "Schottky Rectifiers" schottky diode SMB marking code 120 DO-221 ecopack2 Diode SMB marking code 14 PDF

    STPS20

    Abstract: STPS200 stps2001
    Text: STPS200170TV1 High voltage power Schottky rectifier Features • Negligible switching losses ■ Avalanche rated ■ Low leakage current ■ Good trade-off between leakage current and forward voltage drop ■ Insulated package: ISOTOP – Electrical insulation = 2500 V rms,


    Original     		STPS200170TV1 STPS20 STPS200 stps2001 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		IRFPE40, SiHFPE40 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: BYG23M www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • High reverse voltage • Ultra fast reverse recovery time


    Original     		BYG23M J-STD-020, AEC-Q101 2002/95/EC 2002/96/EC DO-214AC 2011/65/EU 2002/95/EC. 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: TPIC6259 POWER LOGIC 8-BIT ADDRESSABLE LATCH SLIS009A – APRIL 1992 – REVISED SEPTEMBER 1995 • • • • • • • Low rDS on . . . 1.3 Ω Typical Avalanche Energy . . . 75 mJ Eight Power DMOS Transistor Outputs of 250-mA Continuous Current 1.5-A Pulsed Current Per Output


    Original     		TPIC6259 SLIS009A 250-mA PDF

    IRF820PBF

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF820PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFP360, SiHFP360 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rated 400 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.20 • Isolated Central Mounting Hole Qg (Max.) (nC) 210 Qgs (nC) 30 • Fast Switching 110


    Original     		IRFP360, SiHFP360 2002/95/EC O-247AC O-247AC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    SL3107

    Abstract: AUFS3107 AUIRFSL3107 1380A
    Text: PD - 96394A AUTOMOTIVE GRADE AUIRFS3107 AUIRFSL3107 Features l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Enhanced dV/dT and dI/dT capability 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


    Original     		6394A AUIRFS3107 AUIRFSL3107 SL3107 AUFS3107 AUIRFSL3107 1380A PDF

    irfpf40

    Abstract: No abstract text available
    Text: IRFPF40, SiHFPF40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 900 RDS(on) (Ω) VGS = 10 V 2.5 Qg (Max.) (nC) 120 Qgs (nC) 16 Qgd (nC) 67 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole


    Original     		IRFPF40, SiHFPF40 2002/95/EC O-247AC O-247AC O-220trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. irfpf40 PDF

    AUIRLSL4030

    Abstract: AULS4030 3LD2 gs 069 marking h3a 4.5v to 100v input regulator
    Text: PD - 96406B AUTOMOTIVE GRADE AUIRLS4030 AUIRLSL4030 Features l l l l l l l l Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant


    Original     		96406B AUIRLS4030 AUIRLSL4030 AUIRLSL4030 AULS4030 3LD2 gs 069 marking h3a 4.5v to 100v input regulator PDF

    AUIRLS4030-7P

    Abstract: 4.5v to 100v input regulator
    Text: PD - 96399A AUTOMOTIVE GRADE AUIRLS4030-7P HEXFET Power MOSFET Features l l l l l l l l D Optimized for Logic Level Drive Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax


    Original     		6399A AUIRLS4030-7P AUIRLS4030-7P 4.5v to 100v input regulator PDF

    flyback xfmr 3.5 mh

    Abstract: No abstract text available
    Text: IRF730A, SiHF730A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg results in Simple Drive Requirement 400 RDS(on) (Ω) VGS = 10 V 1.0 Qg (Max.) (nC) 22 Qgs (nC) 5.8 Qgd (nC) 9.3 Configuration • Improved Gate, Avalanche and Dynamic dV/dt


    Original     		IRF730A, SiHF730A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 flyback xfmr 3.5 mh PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPE40, SiHFPE40 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 800 RDS(on) (Ω) VGS = 10 V Available • Repetitive Avalanche Rated 2.0 Qg (Max.) (nC) 130 • Isolated Central Mounting Hole Qgs (nC) 17 • Fast Switching


    Original     		IRFPE40, SiHFPE40 2002/95/EC O-247AC O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    100V Single P-Channel HEXFET MOSFET

    Abstract: ld smd transistor p channel mosfet 100v 70a to-252 KRFR9210
    Text: Transistors IC SMD Type HEXFET Power MOSFET KRFR9210 TO-252 +0.15 6.50-0.15 +0.2 5.30-0.2 Available in Tape & Reel Unit: mm +0.1 2.30-0.1 +0.15 1.50-0.15 Features +0.8 0.50-0.7 Dynamic dv/dt Rating Repetitive Avalanche Rated 2.3 +0.1 0.60-0.1 +0.15 4.60-0.15


    Original     		KRFR9210 O-252 100V Single P-Channel HEXFET MOSFET ld smd transistor p channel mosfet 100v 70a to-252 KRFR9210 PDF

    auirf7484q

    Abstract: F7484Q AUIRF
    Text: PD - 97757 AUTOMOTIVE GRADE AUIRF7484Q Features l Advanced Planar Technology l Low On-Resistance l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified*


    Original     		AUIRF7484Q auirf7484q F7484Q AUIRF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFPC50A, SiHFPC50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.58 • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 70 Qgs (nC)


    Original     		IRFPC50A, SiHFPC50A 2002/95/EC O-247AC O-247AC IRFPC50APbF 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    910410

    Abstract: No abstract text available
    Text: IRF710, SiHF710 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 400 RDS(on) () VGS = 10 V Qg (Max.) (nC) 17 • Fast Switching Qgs (nC) 3.4 • Ease of Paralleling Qgd (nC) 8.5 Configuration Available • Repetitive Avalanche Rated


    Original     		IRF710, SiHF710 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 910410 PDF

    Untitled

    Abstract: No abstract text available
    Text: Panasonic P o w er F -M O S F E T s 2SK2375 Silicon N-Channel Power F-MOS Unit : mm • Features • • • • Avalanche energy capability guaranteed High-speed switching Low ON-resistance No secondary breakdown 5X ■ A pplications • • • • • Non-contact relay


    OCR Scan     		2SK2375 PDF

    DL5551P2

    Abstract: NDL5516PC
    Text: DATA SHEET PHOTO DIODE NDL5506P Series 0 50 ¿¿in InGaAs AVALANCHE PHOTO DIODE 14-PIN DIP MODULE WITH TEC DESCRIPTION The NDL5506P Series is an InGaAs avalanche photodiode module with Internal therm oelectric cooler. This series Is available In multimode or single mode fiber. It covers the wavelength range between 1 000 and 1 600 nm with high


    OCR Scan     		NDL5506P 14-PIN DL5590P NDL5531P NDL5531P1 DL5531P2 NDL5592P NDL5592P1 DL5551P2 NDL5516PC PDF

    Untitled

    Abstract: No abstract text available
    Text: Back to FETs 0 /V E F ^ IP NES 130/59 NEW ENGLAND SEMICONDUCTOR POWER MOSFET N CHANNEL • REPETITIVE AVALANCHE RATINGS • LOW RDS 0 n • LOW DRIVE REQUIREM ENT • DYNAM IC d v / d t RATING ABSOLUTE MAXIMUM RATINGS (Tc = 25°C unless otherwise noted) PARAMETERS / TEST CONDITIONS


    OCR Scan     		NES130/59 PDF