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    AVALANCHE PHOTODIODE BIAS AND HIGH VOLTAGE Search Results

    AVALANCHE PHOTODIODE BIAS AND HIGH VOLTAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GC321AD7LP103KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331AD7LQ153KX18J Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC331CD7LQ473KX19K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC343DD7LP334KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GC355DD7LQ224KX18K Murata Manufacturing Co Ltd High Effective Capacitance & High Ripple Current Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    AVALANCHE PHOTODIODE BIAS AND HIGH VOLTAGE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MAX1932

    Abstract: No abstract text available
    Text: 19-4557; Rev 1; 3/11 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create


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    DS1842 14-ease DS1842 MAX1932 PDF

    high voltage current mirror

    Abstract: DS1842 avalanche photodiode bias MAX1932 14 TDFN-EP GPON block diagram Current Mirror FET current mirror rise time apd
    Text: 19-4557; Rev 0; 4/09 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create


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    DS1842 14-Pin DS1842 T1433 high voltage current mirror avalanche photodiode bias MAX1932 14 TDFN-EP GPON block diagram Current Mirror FET current mirror rise time apd PDF

    DS1875

    Abstract: GPON APD DS1842 JESD51-7 MAX1932
    Text: 19-4557; Rev 1; 3/11 76V, APD, Bias Output Stage with Current Monitoring The DS1842 integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET is used in conjunction with an external DC-DC controller to create


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    DS1842 14-Pin DS1842 DS1875 GPON APD JESD51-7 MAX1932 PDF

    pyroelectric amplifier circuit

    Abstract: "Pyroelectric Detectors" pyroelectric detector P4488
    Text: Applicable Equipments APD Modules The APD Module series are high-sensitivity photodetectors that integrate an APD avalanche photodiode and a fast-response, low-noise current-to-voltage conversion amplifier circuit, along with the bias power supply. The following 4 types are available


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    C5331 C5460 C5658 C5658. H4741, H3651, H4018 P4488 pyroelectric amplifier circuit "Pyroelectric Detectors" pyroelectric detector PDF

    S4753

    Abstract: Photodiode apd amplifier S4751 photodiode 10Ghz PIN APD, applications, bias supply PIN photodiode 5ghz rise time apd APD 10ghz S4752
    Text: C APD MODULES An APD high-speed amplifier and power supply on a compact board The APD Module series are high-sensitivity photodetectors that integrate an APD avalanche photodiode and a fast-response, low-noise current-to-voltage conversion amplifier circuit, along with the bias power supply. The follow­


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    C5331 C5460 C5658 C4890 C4890 S4753 Photodiode apd amplifier S4751 photodiode 10Ghz PIN APD, applications, bias supply PIN photodiode 5ghz rise time apd APD 10ghz S4752 PDF

    GPON block diagram

    Abstract: ds1875 high voltage current mirror side mirror control DS1842
    Text: 19-4994; Rev 0; 10/09 KIT ATION EVALU LE B A IL A AV 76V, APD, Bias Output Stage with Current Monitoring The DS1842A integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A switch FET and precision voltage-divider network are used in conjunction with an external DC-DC controller to create a boost


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    DS1842A T1433 GPON block diagram ds1875 high voltage current mirror side mirror control DS1842 PDF

    APD500-LCC

    Abstract: No abstract text available
    Text: APD500-LCC v 1.1 05.03.2014 Description APD500-LCC is a silicon semiconductor avalanche photodiode with an active area of 500 µm. It features extremely fast rise time of 0.6 ns, high gain at low bias voltage, and low capacitance. APD500-LCC is typically used for Laser Range Finding and LIDAR applications.


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    APD500-LCC APD500-LCC PDF

    APD230-LCC

    Abstract: No abstract text available
    Text: APD230-LCC v 1.1 05.03.2014 Description APD230-LCC is a silicon semiconductor avalanche photodiode with an active area of 230 µm. It features extremely fast rise time of 250 ps, high gain at low bias voltage, and low capacitance. APD230-LCC is typically used for Laser Range Finding and LIDAR applications.


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    APD230-LCC APD230-LCC PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-4994; Rev 1; 9/11 KIT ATION EVALU LE B A IL A AV 76V, APD, Dual Output Current Monitor The DS1842A integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A precision voltage-divider network is used in conjunction with an


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    DS1842A DS1842A PDF

    DS4830

    Abstract: JESD51-7 OLT block diagram GPON high voltage current mirror GPON APD
    Text: 19-4994; Rev 1; 9/11 KIT ATION EVALU LE B A IL A AV 76V, APD, Dual Output Current Monitor The DS1842A integrates the discrete high-voltage components necessary for avalanche photodiode APD bias and monitor applications. A precision voltage-divider network is used in conjunction with an


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    DS1842A DS1842A DS4830 JESD51-7 OLT block diagram GPON high voltage current mirror GPON APD PDF

    Si apd photodiode

    Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity
    Text: US Patent Pending APD Si APD S8328 Quadrant APD with high bluish-violet sensitivity S8328 is a quadrant APD Avalanche Photodiode having a gain of 2-100. The peak gain lies at 420 nm and creates a high sensitivity for blue to violet minor signals. An on-chip bias control circuit gives the most stable output from low to high temperature.


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    S8328 S8328 SE-171 KAPD1006E01 Si apd photodiode parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y 420nm quadrant avalanche photodiode Photodiode apd high sensitivity PDF

    Si apd photodiode

    Abstract: Si apd photodiode rangefinder photodiode Avalanche photodiode APD FOR POWER APD Ghz apd photodetector C5658 SE-171 is 53 APD photodiode 8 Ghz
    Text: MODULE APD module C5658 Detects optical signals at 1 GHz, with high sensitivity APD module C5658 is a highly sensitive photodetector consisting of a Si APD avalanche photodiode , a bias power supply and a low-noise amplifier, all integrated into a compact case. The APD used has an effective active area of φ0.5 mm to allow efficient coupling to a light beam in


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    C5658 C5658 C5658) SE-171 KACC1023E01 Si apd photodiode Si apd photodiode rangefinder photodiode Avalanche photodiode APD FOR POWER APD Ghz apd photodetector is 53 APD photodiode 8 Ghz PDF

    Si apd photodiode

    Abstract: Si apd photodiode rangefinder APD, applications, bias supply C5658 SE-171
    Text: MODULE APD module C5658 Detects optical signals at 1 GHz, with high sensitivity APD module C5658 is a highly sensitive photodetector consisting of a Si APD avalanche photodiode , a bias power supply and a low-noise amplifier, all integrated into a compact case. The APD used has an effective active area of φ0.5 mm to allow efficient coupling to a light beam in


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    C5658 C5658 C5658) SE-171 KACC1023E03 Si apd photodiode Si apd photodiode rangefinder APD, applications, bias supply PDF

    C56-58

    Abstract: hamamatsu low dark current APD
    Text: MODULE APD module C5658 Detects optical signals at 1 GHz, with high sensitivity APD module C5658 is a highly sensitive photodetector consisting of a Si APD avalanche photodiode , a bias power supply and a low-noise amplifier, all integrated into a compact case. The APD used has an effective active area of φ0.5 mm to allow efficient coupling to a light beam in


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    C5658 C5658 C5658) SE-171 KACC1023E02 C56-58 hamamatsu low dark current APD PDF

    f0pf

    Abstract: KPDB0001EA C0002EA photodiode PN S4753 GaAsP Laser Diode
    Text: Characteristics and Use of Photodiodes INTRODUCTION Photodiodes are sem iconductor light sensors that generate a current or voltage when the P-N junction in the sem iconductor is illum inated by light. The term photodiode can be broadly defined to include even solar batteries, but it usually refers to sensors used to


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    780nm B0020EA B0016EA f0pf KPDB0001EA C0002EA photodiode PN S4753 GaAsP Laser Diode PDF

    avalanche photodiode bias

    Abstract: No abstract text available
    Text: PRELIMINARY TECHNICAL DATA Avalanche Photodiode Bias Controller and Wide-range 5 nA - 5 mA Current Monitor ADL5317 FEATURES Accurately sets avalanche photodiode bias voltage Wide bias range from 6 V to 75 V set Using 3V-compatible control interface Monitors photodiode current (5:1 ratio) over 6 decades


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    ADL5317 16-lead ADL5317 ADL5317XCP ADL5317-EVAL CP-16 PR05456-0-2/05 avalanche photodiode bias PDF

    photodiode preamplifier

    Abstract: Si apd photodiode APD bias gain photodiode Avalanche photodiode APD Photodiode cost sheet 25XV APD50 avalanche photodiode Photodiode apd amplifier SILICON APD Pre-Amplifier
    Text: DATA SHEET APD50 APD AVALANCHE PHOTODIODE PREAMPLIFIER A Si avalanche photodiode and low noise preamplifier module. A field effect transistor input stage ensures low HF noise and wide bandwidth. The bias voltage supply has temperature compensation to maintain the APD. gain constant.


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    APD50 APD50 D-12459 photodiode preamplifier Si apd photodiode APD bias gain photodiode Avalanche photodiode APD Photodiode cost sheet 25XV avalanche photodiode Photodiode apd amplifier SILICON APD Pre-Amplifier PDF

    ADL5317

    Abstract: for APD bias high-voltage
    Text: PRELIMINARY TECHNICAL DATA Avalanche Photodiode Bias Controller and Wide-range 5 nA - 5 mA Current Monitor ADL5317 FEATURES Accurately sets avalanche photodiode bias voltage Wide bias range from 6 V to 75 V set Using 3V-compatible control interface Monitors photodiode current (5:1 ratio) over 6 decades


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    ADL5317 16-lead ADL5317 ADL5317XCP ADL5317-EVAL PR05456-0-2/05 CP-16 for APD bias high-voltage PDF

    10G APD chip

    Abstract: PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps PSS-AD230-2
    Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD230-2.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 2.3 GHz AMPLIFIER PSS-AD230-2.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a


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    PSS-AD230-2 10G APD chip PSS-AD230 Photodiode apd amplifier apd model 10G APD photodiode Avalanche photodiode avalanche photodiode receiver AD230-2.3G-TO5 apd 850 nm 130 ps PDF

    10G APD chip

    Abstract: Photodiode apd amplifier 500 watts amplifier schematic diagram PSS-AD500-1 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500
    Text: Pacific Silicon Sensor Inc. Data Sheet PSS-AD500-1.3G-TO5 OPTICAL DATA RECEIVER USING AN AVALANCHE PHOTODIODE AND A 1.3 GHz AMPLIFIER PSS-AD500-1.3G-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a


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    PSS-AD500-1 10G APD chip Photodiode apd amplifier 500 watts amplifier schematic diagram 10G APD photodiode Avalanche photodiode APD photodiode Avalanche photodiode APD FOR POWER avalanche photodiode receiver AD500 PSS-AD500 PDF

    Untitled

    Abstract: No abstract text available
    Text: P RE L I M I NARY Detectors UV-Enhanced Silicon Avalanche Photodiode SUR-Series Description The SUR-Series is based on a silicon “reach-through” structure with high sensitivity in the DUV/UV wavelength range . Many applications particularly in the medical and


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    PDF

    SAE500NX

    Abstract: SAE230NS avalanche photodiode noise factor 0E-07 SAE230NX m8 smd rise time avalanche photodiode
    Text: Silicon Avalanche Photodiode SAE-Series NIR-Enhanced DESCRIPTION The SAE230NS and SAE500NS epitaxial avalanche photodiodes are general purpose APDs with high responsivity and extremely fast rise and fall times through out the 550 to 1050 nm wavelength range.


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    SAE230NS SAE500NS SAE230NX SAE500NX avalanche photodiode noise factor 0E-07 m8 smd rise time avalanche photodiode PDF

    TO-59 Package

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.


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    SAR500-Series SARP500-Series SAR500 SARP500 TO-59 Package PDF

    Untitled

    Abstract: No abstract text available
    Text: Detectors Silicon Avalanche Photodiode SAR-/SARP-Series Description The SAR500-Series is based on a “reach-through” structure for excellent quantum efficiency and high speed. The peak sensitivity in the NIR region enables rangefinding applications with pulsed laser diodes. A variety of package options is available.


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    SAR500-Series SARP500-Series SAR500 SARP500 PDF