3SK59
Abstract: 3SK59-GR diode jn7 dual 1038 Transistor
Text: 2/U □ 3 h 3SK SILICON N-CHANNEL DEPLETION DUAL GATE MOS FIELD EFFECT TRANSISTOR O rMfa BF.MIXJI3 , VHF «Jirtlffl Unit in mm PM TUNER,VHF Amplifier Applications. -to AQC&fS&B: < AGCHfKi 'Vi ; 0res = C103pF Typ. &ntTj- ; NF = 2.2 dB (Typ .) C t— 100MHz )
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100MHz
3SK59
3SK59-GR
diode jn7
dual 1038 Transistor
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ma40208
Abstract: MA400 MA40052 MA40268-276
Text: Chip and Packaged Silicon Schottky Detector Diodes Features • WIDE SELECTION OF PACKAGES FOR STRIPLINE, COAXIAL AND WAVEGUIDE DETECTORS ■ CHIP DIODES AVAILABLE 120 ■ BOTH P AND N TYPE DIODES 276 I ■ EXCELLENT SENSITIVITY THROUGH Ka-BAND ■ LOW 1/f NOISE
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MADP-007224-01072T
Abstract: MADP-007224-01072
Text: MADP-007224-01072T Non Magnetic MELF PIN Diode Features Rectangular MELF SMQ Hermetically Sealed Low Loss Low Distortion High Isolation Passivated PIN Diode Chips Full Face Bonds Ultra Low Non-Magnetic Packages Suitable for MRI Applications • High Power Handling Capability
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MADP-007224-01072T
MADP-007224-01072T
100mA
MADP-007224-01072
100VDC
100MHz
MADP-007224-01072
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TL139
Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
H-37275-6/2
TL139
PTFB183404
PTFB183404EF
TL148
TRANSISTOR tl131
TL162
TL170
tl172
c105 TRANSISTOR
TL145
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atc200b104kw50
Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183404F
PTFB183404F
340-watt
atc200b104kw50
TL170
TL235
TL138
TL140
tl239
Tl141
TL163
tl172
tl147
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PDF
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TL139
Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications
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PTFB183404E
PTFB183404F
PTFB183404F
340-watt
H-36275-8
H-37275-6/2
TL139
TL205
PTFB183404
transistor TL131
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HFBR-1414 receiver application notes
Abstract: hp HFBR-1414 application notes Driver circuit hfbr-2412 HFBR-0400 HFBR-0414 HFBR-0416 HFBR-14X2 HFBR-14X4 HFBR-24X6 log RX2 1040
Text: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or
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HFBR-0400
Reliabil0400
MIL-STD-883
HFBR-1414 receiver application notes
hp HFBR-1414 application notes
Driver circuit hfbr-2412
HFBR-0414
HFBR-0416
HFBR-14X2
HFBR-14X4
HFBR-24X6
log RX2 1040
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ultem 1010
Abstract: hp HFBR-1414 application notes SMA-905 drawing HFBR-1414T HFBR-2414 pt100 schematic HFBR-2416 receiver application notes HFBR-0416 HFBR 04X0 HFBR-1414 receiver application notes
Text: Low Cost, Miniature Fiber Optic Components with ST , SMA, SC and FC Ports Technical Data HFBR-0400 Series Features Applications • Meets IEEE 802.3 Ethernet and 802.5 Token Ring Standards • Low Cost Transmitters and Receivers • Choice of ST®, SMA, SC or
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HFBR-0400
Reliabil0400
MIL-STD-883
ultem 1010
hp HFBR-1414 application notes
SMA-905 drawing
HFBR-1414T
HFBR-2414
pt100 schematic
HFBR-2416 receiver application notes
HFBR-0416
HFBR 04X0
HFBR-1414 receiver application notes
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TL172
Abstract: TL170
Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications
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PTFB183404E
PTFB183404F
PTFB183404E
PTFB183404F
340-watt
H-37275-6/2
TL172
TL170
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B 1038 superior
Abstract: irfp9240
Text: PD-9.481C International IrâRi Rectifier IRFP9240 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description
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IRFP9240
O-247
O-218
B 1038 superior
irfp9240
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Mosfet
Abstract: SSPL2015
Text: SSPL2015 200V N-Channel MOSFET Main Product Characteristics VDSS 200V RDS on 0.13ohm(typ.) ID 18A ① TO - 220 Schematic Diagram Marking and Pin Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and
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SSPL2015
13ohm
O-220
to175
Mosfet
SSPL2015
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walkie talkie circuit diagram
Abstract: Telemecanique XS1 walkie talkie circuit diagram using op amp XS2D12PA140D simple walkie talkie circuit diagram xs1-d08pa140 XSA-V11801 TF Telemecanique xsc TSX NANO CABLE XS8E1A1PAL01M12
Text: Proximity Sensors x File 9006 CONTENTS Schneider Electric Brands Description Page Selection Guide . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 Auto-adaptable and Standard Flat Inductive Proximity Sensor . . . . . . . . . . . . . . . 206
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5-4-199X)
LR46094
LR44087
E39291
E39281
walkie talkie circuit diagram
Telemecanique XS1
walkie talkie circuit diagram using op amp
XS2D12PA140D
simple walkie talkie circuit diagram
xs1-d08pa140
XSA-V11801 TF
Telemecanique xsc
TSX NANO CABLE
XS8E1A1PAL01M12
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CD 1517
Abstract: IRFP9240
Text: PD-9.481C International S Rectifier IRFP9240 HEXFET P o w e r M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Description
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IRFP9240
-200V
O-247
T0-220
O-218
CD 1517
IRFP9240
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PDF
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Untitled
Abstract: No abstract text available
Text: International Rectifier HEXFET Power M O S FE T 465S452 OOlSSSb D71 • INR PD-9.481C IRFP9240 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated P-Channel Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements
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465S452
IRFP9240
O-247
T0-220
O-247
QG155bl
150KA
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MA4PK2004
Abstract: MA4PK3001
Text: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating Designed for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design
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MA4PK2000,
resis30
MA4PK2004
MA4PK3001
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MA4PK2004
Abstract: LM 072 MA4P diode mri pin switch MA4PK3003 100 mhz hf diode 50 ampere MA4PK3004 MA4PK2000 MA4PK2001 MA4PK2002
Text: an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • Voltage Ratings to 3000 Volts • 2 5 Ampere Current Rating • Designed for HF, Multi-Kilowatt Switches • Low Loss, Low Distortion Design • Rugged, Hermetically Sealed Packaging
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carrie05
MA4PK3003
MA4PK3004
MA4PK2004
LM 072
MA4P
diode mri pin switch
MA4PK3003
100 mhz hf diode 50 ampere
MA4PK3004
MA4PK2000
MA4PK2001
MA4PK2002
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PDF
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6-40 UNF
Abstract: No abstract text available
Text: M an A M P com pany 2000 Volt and 3000 Volt PIN Diodes MA4PK2000, 3000 KILOVOLT Series V3.00 Features • • • • • • • Voltage Ratings to 3000 Volts 25 Ampere Current Rating D esigned for HF, Multi-Kilowatt Switches Low Loss, Low Distortion Design
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MA4PK2000,
6-40 UNF
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PDF
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d 2331
Abstract: half adder ic number of half adder ic with full specification vts 7070
Text: VITESSE SEMICONDUCTOR MflE D VITESSE FEATURES • Superior performance: high speed/low power • Array performance: - D flip-flop toggle rates: >1 GHz - Typical gate delay: 177 ps @ 1.1 mW 2-Input NOR, F.O. = 3 ,1 .5 mm wire - TTL/CM O S inputs/outputs to support up to
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T502331
00D0574
LT117A
LT117A
d 2331
half adder ic number
of half adder ic with full specification
vts 7070
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PDF
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FET 3N143
Abstract: maximum drain voltage of FET 3N143 3n128 air variable capacitor 3N143 RCA-3N128 JV3I transistor 3N128 equivalent RCA Solid State amplifier AN-3193
Text: G E SOLI] STATE “ 3875081 G E SOLID STATE Di” DE pflTSDfll D D m i a M 2 | l * B“ 01E 14.984 Uj *7-31-«*5“ Small-Signal MOSFETs. .
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3N128,
3N143
3N143
3N128
FET 3N143
maximum drain voltage of FET 3N143
air variable capacitor
RCA-3N128
JV3I transistor
3N128 equivalent
RCA Solid State amplifier
AN-3193
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TCXO mtbf
Abstract: transistor c333 AN-932 MIL-PRF-55310 spec OS-68338 DOC200103 radiation cots cmos B A date sheet 2011 VECTRON 2501 manufacturer list cots radiation
Text: REV B DESCRIPTION DATE 7/1/08 CO-11365 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE
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CO-11365
DOC200103
M55342)
M55342
TCXO mtbf
transistor c333
AN-932
MIL-PRF-55310 spec
OS-68338
DOC200103
radiation cots cmos
B A date sheet 2011
VECTRON 2501
manufacturer list cots radiation
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PDF
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.
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PTFB183408SV
PTFB183408SV
340-watt
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DOC200103
Abstract: transistor c331 transistor c333 bipolar cots radiation HT-67849 MIL-PRF-55310 OS-68338 MIL-PRF-55310 spec TCXO mtbf M55365
Text: REV C DESCRIPTION DATE 7/15/09 CO-15263 PREP SM APPD HW VECTRON INTERNATIONAL MOUNT HOLLY SPRINGS, PA 17065 DATE PREPARED BY S. Murphy 6/19/08 Specification, Hybrid TCXO QUALITY R. Smith 6/19/08 Hi-Rel Standard ENGINEERING H. Wilson 6/19/08 CODE IDENT NO SIZE
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CO-15263
DOC200103
M55342)
M55342
DOC200103
transistor c331
transistor c333
bipolar cots radiation
HT-67849
MIL-PRF-55310
OS-68338
MIL-PRF-55310 spec
TCXO mtbf
M55365
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PDF
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Untitled
Abstract: No abstract text available
Text: REV D DESCRIPTION DATE 11/5/14 CO-24284 PREP HLW APPD DF Specification, Hybrid TCXO Hi-Rel Standard MOUNT HOLLY SPRINGS, PA 17065 THE RECORD OF APPROVAL FOR THIS DOCUMENT IS MAINTAINED ELECTRONICALLY WITHIN THE ERP SYSTEM CODE IDENT NO SIZE 00136 A DWG. NO.
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CO-24284
DOC200103
M55342
Mil-STD-981.
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Untitled
Abstract: No abstract text available
Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to
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PTFB183408SV
PTFB183408SV
340-watt
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