transistor 342 G
Abstract: buz 342 G C67078-S3135-A2 transistor 342 pf buz 342 transistor
Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175°C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω
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C67078-S3135-A2
transistor 342 G
buz 342 G
C67078-S3135-A2
transistor 342 pf
buz 342 transistor
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C67078-S3135-A2
Abstract: transistor 342 G BUZ342
Text: BUZ 342 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • Ultra low on-resistance • 175˚C operating temperature Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 342 50 V 60 A 0.01 Ω
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O-218
C67078-S3135-A2
C67078-S3135-A2
transistor 342 G
BUZ342
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GA200SA60SP
Abstract: GA200SA60S
Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
E78996
2002/95/EC
11-Mar-11
GA200SA60SP
GA200SA60S
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CGC SWITCH
Abstract: transistor 342 pf GA200SA60SP
Text: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)
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GA200SA60SP
OT-227
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
CGC SWITCH
transistor 342 pf
GA200SA60SP
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bipolar junction transistor
Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
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MMBT2131T1/D
MMBT2131T1
MMBT2131T3
MMBT2132T1/T3)
bipolar junction transistor
motorola an569 thermal
MOTOROLA TRANSISTOR
318F
AN569
MMBT2131T1
MMBT2131T3
AN569 in Motorola Power Applications
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318F
Abstract: AN569 MMBT2131T1 MMBT2131T3
Text: ON Semiconductort MMBT2131T1 MMBT2131T3 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 NOTE: Voltage and Current are negative for the PNP Transistor. 0.7 AMPERES 30 VOLTS – V(BR)CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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MMBT2131T1
MMBT2131T3
MMBT2132T1/T3)
r14525
MMBT2131T1/D
318F
AN569
MMBT2131T1
MMBT2131T3
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MOTOROLA TRANSISTOR T2
Abstract: motorola an569 thermal motorola an569 MOTOROLA TRANSISTOR TRANSISTOR MOTOROLA 318F AN569 MMBT2132T1 MMBT2132T3
Text: MOTOROLA Order this document by MMBT2132T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2132T1 MMBT2132T3 Product Preview General Purpose Transistors NPN Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary PNP Device: MMBT2131T1/T3) MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
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MMBT2132T1/D
MMBT2132T1
MMBT2132T3
MMBT2131T1/T3)
MOTOROLA TRANSISTOR T2
motorola an569 thermal
motorola an569
MOTOROLA TRANSISTOR
TRANSISTOR MOTOROLA
318F
AN569
MMBT2132T1
MMBT2132T3
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318F
Abstract: AN569 MMBT2131T1
Text: MMBT2131T1 General Purpose Transistors PNP Bipolar Junction Transistor Complementary NPN Device: MMBT2132T1/T3 http://onsemi.com NOTE: Voltage and Current are negative for the PNP Transistor. MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value
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MMBT2131T1
MMBT2132T1/T3)
MMBT2131T1/D
318F
AN569
MMBT2131T1
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MMBT2132T3
Abstract: 318F AN569 MMBT2132T3G
Text: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage
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MMBT2132T3
MMBT2132T1/D
MMBT2132T3
318F
AN569
MMBT2132T3G
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Untitled
Abstract: No abstract text available
Text: Cologne Chip HFC - E1 ISDN HDLC FIFO controller with Primary Rate Interface E1 Data Sheet October 2007 Cologne Chip Revision History of HFC-E1 Data Sheet Date Remarks October 2007 Minor changes were made in this data sheet revision: Information added to Section 2.2.4
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2N5643
Abstract: No abstract text available
Text: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in
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2N5643
30Vdc.
2N5643
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cm 20 mdl 12h
Abstract: Access Stack Node ST10F269 ST10R167 disassembler ST10F269 03 all stk ic diagram st10r167 buscon lauterbach JTAG Programmer Schematics ST*10f269-q3
Text: ST10F269 USER’S MANUAL Release 1.2 This is advance information on a new product now in development or undergoing evaluation. Details are subject to change without notice. ST10F269 USER’S MANUAL TABLE OF CONTENTS Page 1 INTRODUCTION .
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ST10F269
ST10F269
F269UM
cm 20 mdl 12h
Access Stack Node
ST10R167
disassembler
ST10F269 03
all stk ic diagram
st10r167 buscon
lauterbach JTAG Programmer Schematics
ST*10f269-q3
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b342d
Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
Text: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.
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ep 1387
Abstract: 2SA738 2SA681 2SA682 i705 2SA683 2SC1361
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SA682
2SA683
2SA681
ep 1387
2SA738
2SA682
i705
2SA683
2SC1361
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Untitled
Abstract: No abstract text available
Text: Ordering n u m ber: EN 1 6 1 4 B _ 2SC3636 NPN Triple Diffused Planar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High reliability Adoption of HVP process . Fast speed. . High breakdown voltage.
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2SC3636
VCC-200V
T03PB
4227KI/3095KI/N174KI
0Q2DB57
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BDB04
Abstract: BDB04 MOTOROLA BDC02A BDB01A BDB01B BDB028 BDB02A BDC01A BDC01B BDC01C
Text: SMALL SIGNAL TRANSISTORS — PLASTIC continued High-Current T092 1 WATT EUROPEAN VERSION PIN OUT ECB PNP / NPN EBC ICBO BVCEO HFE (V) IC Max (A) max (nA) VCB min max VCEsat IC(mA) VCE (V) max V ICmA IB (mA) min MHz IC (mA) B D C 01 A B D C 02 A BDB01A BDB02A
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BDC01A
BDC02A
BDB01A
BDB02A
BDC01B
BDC02B
BDB01B
BDB028
BDC01C
BDC02C
BDB04
BDB04 MOTOROLA
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BFY80
Abstract: No abstract text available
Text: Silïzium-NPN-Epitaxial-Planar-Transistor Silicon NPN Epitaxial Pianar Transistor Anwendungen: Ansteuerung von Ziffernanzeigeröhren und Relais Applications: D river stages fo r in d ica to r tubes and relays Features: Besondere Merkmale: • Hohe Sperrspannung
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Untitled
Abstract: No abstract text available
Text: 32E D • ÛE3b32G O Q lb T b b ISIP PNP Silicon High-Voltage Transistors BF 721; BF 723 _ SIEMENS/ SPCLi SEMICONDS _ r - s 3 - \ 7 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector -emitter saturation voltage
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E3b32G
Q62702
OT-223
Q627Q2
flS3b320
T-33-17
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULES- Q C A 150B A 60 U L;E 76102 M ) QCA1 5 0 B A 6 0 is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral leled fast recovery diode ( t r r : 200ns). The mounting base of the
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200ns)
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A1241
Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0
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A1241
2SD1221
2SC4681
2SC4685
c4684
2_s transistors
c3072
B834
SA1357
c4793
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Transistor BFX 41
Abstract: Transistor BFX 25 Q60206-X55 B63310-A3004-X025 B63310 Scans-0010547
Text: B F X 55 N P N i-T ran sistor für V H F -E n d stu fe n in A ntennenverstärkern BFX 55 ist ein epitaktischer NPN-Silizium-Planar-Transistor im Gehäuse 5 C 3 DIN 41 873 TO-39 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Der Transistor BFX 55
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Q60206-X55
150mA
Transistor BFX 41
Transistor BFX 25
Q60206-X55
B63310-A3004-X025
B63310
Scans-0010547
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Untitled
Abstract: No abstract text available
Text: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.
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BUZ45A_
bb53T31
0014bS7
T-39-13
T-39-13
D014bST
BUZ45A
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brush dc motor control 200v 20a
Abstract: No abstract text available
Text: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the
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PWR-82340
PWR-82342
PWR-82342
8234X-XX0
PWR-82340/342
brush dc motor control 200v 20a
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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