ep 1387
Abstract: 2SA738 2SA681 2SA682 i705 2SA683 2SC1361
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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2SA682
2SA683
2SA681
ep 1387
2SA738
2SA682
i705
2SA683
2SC1361
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bipolar junction transistor
Abstract: motorola an569 thermal MOTOROLA TRANSISTOR 318F AN569 MMBT2131T1 MMBT2131T3 AN569 in Motorola Power Applications
Text: MOTOROLA Order this document by MMBT2131T1/D SEMICONDUCTOR TECHNICAL DATA MMBT2131T1 MMBT2131T3 Product Preview General Purpose Transistors PNP Bipolar Junction Transistor 0.7 AMPERES 30 VOLTS — V BR CEO 342 mW (Complementary NPN Device: MMBT2132T1/T3) NOTE: Voltage and Current are negative for the PNP Transistor.
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MMBT2131T1/D
MMBT2131T1
MMBT2131T3
MMBT2132T1/T3)
bipolar junction transistor
motorola an569 thermal
MOTOROLA TRANSISTOR
318F
AN569
MMBT2131T1
MMBT2131T3
AN569 in Motorola Power Applications
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MMBT2132T3
Abstract: 318F AN569 MMBT2132T3G
Text: MMBT2132T3 General Purpose Transistors NPN Bipolar Junction Transistor http://onsemi.com Features • Pb−Free Package is Available 0.7 AMPS 30 VOLTS − V BR CEO 342 mW MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage
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MMBT2132T3
MMBT2132T1/D
MMBT2132T3
318F
AN569
MMBT2132T3G
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BDB04
Abstract: BDB04 MOTOROLA BDC02A BDB01A BDB01B BDB028 BDB02A BDC01A BDC01B BDC01C
Text: SMALL SIGNAL TRANSISTORS — PLASTIC continued High-Current T092 1 WATT EUROPEAN VERSION PIN OUT ECB PNP / NPN EBC ICBO BVCEO HFE (V) IC Max (A) max (nA) VCB min max VCEsat IC(mA) VCE (V) max V ICmA IB (mA) min MHz IC (mA) B D C 01 A B D C 02 A BDB01A BDB02A
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BDC01A
BDC02A
BDB01A
BDB02A
BDC01B
BDC02B
BDB01B
BDB028
BDC01C
BDC02C
BDB04
BDB04 MOTOROLA
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A1241
Abstract: c4684 2_s transistors c3072 B834 SA1357 c4793
Text: S urface Mo unt Device 4 Power Mold Transistors (D PACK) E lectrical C h a ra cte ristics {T a= 2 5°C ) A p plication T yp e No. VCEO (V) Ic (A) Pc (W ) Pc* (W ) Tj (°C) C o m plem en tary 2 S A 1225 D rive r stage. Pow er am plification. -160 -1.5 1.0
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A1241
2SD1221
2SC4681
2SC4685
c4684
2_s transistors
c3072
B834
SA1357
c4793
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brush dc motor control 200v 20a
Abstract: No abstract text available
Text: PWR-82340 and PWR-82342 ILC DATA DEVICE CORPORATION_ _ _ SMART POWER H-BRIDGE MOTOR DRIVES FEATURES DESCRIPTION The PWR-82340 and PWR-82342 are 30A H-bridge motor drive hybrids. The PWR-82340 has a 200V rating and uses M O SFETs in the output stage while the
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PWR-82340
PWR-82342
PWR-82342
8234X-XX0
PWR-82340/342
brush dc motor control 200v 20a
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A 564 transistor
Abstract: 3181 R33 transistor A 564
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC4227 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, PACKAGE DIMENSIONS in millimeters UHF low noise amplifier.
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2SC4227
2SC4227
SC-70
A 564 transistor
3181 R33
transistor A 564
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BC211
Abstract: TR BC BC211A BC313A bc 313 iriver BC313 h21e deflexion NPN pnp MATCHED PAIRS
Text: *B C 211 BC 211 A NPN SILICON TRANSISTORS, PLANAR TRANSISTORS NPN SILICIUM, PLANAR H5 Preferred device Dispositif recommandé The BC 211 and BC 211 A are intended for a iride variety of medium power medium speed witching and AF amplifier application ; they
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2SC4163
Abstract: DDED177 Ib22
Text: I Ordering num ber:EN 2484B 2SC4163 NPN Triple Diffused Planar Silicon Transistor 400V/12A Switching Regulator Applications Features . High breakdown voltage and high reliability . Fast switching speed tf=0.1us typ . Wide ASO . Adoption of MBIT process . Micaless package facilitating mounting
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2484B
2SC4163
00V/12A
PVK300ps
l00uH
GD5D17B
DDED177
Ib22
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BSD215
Abstract: bsd214 BSD212 BSD213 transistor BD 341
Text: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high
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BSD212
BSD215
BSD213
BSD215
BSD214
DDb7717
B5D212
transistor BD 341
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transistor BD 339
Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.
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00E374S
BSD212
BSD215
BSD213
BSD215
BSD214
bb53031
transistor BD 339
transistor BD 341
BB530
-20/transistor BD 341
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transistor NEC D 587
Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Text: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS
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uPA802T
2SC4227)
transistor NEC D 587
LS 1691 BM
l 9143
NEC D 587
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bu 517
Abstract: NDS352P
Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS352P
b50113D
003T74G
bSD113D
bSD113D
317H2
bu 517
NDS352P
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Untitled
Abstract: No abstract text available
Text: t 353*131 □ a ifla s i 1 • DEVELOPMENT DATA BUT22BF BUT22CF This data sheet contains advance information and specifications are subject to change without notice* N AMER PHILIPS/DISCRETE 35E D SILICON DIFFUSED POWER TRANSISTORS T - 33-0? High-voltage, high-speed, glass-passivated npn power transistor in a SOT186 envelope intended for use
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BUT22BF
BUT22CF
OT186
bb53T31
T-33-09
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marking 822
Abstract: transistor IC 1557 b Telefunken u 257
Text: Temic S822T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features •
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S822T
08-Apr-97
marking 822
transistor IC 1557 b
Telefunken u 257
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2SK1792
Abstract: irig b converter
Text: TO SHIBA 2SK1792 Industrial Applications TQ-220FL Field Effect Transistor Unit in mm Silicon N Channel MOS Type L2-7t-MOS IV High Speed Switching, DC-DC Converter, Relay Drive, Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance
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2SK1792
TQ-220FL
2SK1792
irig b converter
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Untitled
Abstract: No abstract text available
Text: 5ÖE D TELEDYNE COMPONENTS. Ï ö T i v t i Q S □a ob beja 3 CHQ2907 PNP QUAD AMPLIFIER Ä S i §Ji§ JAN, JANTX, JANTXV General Purpose_ _ _pending PA CKA G E OUTLINE Four PNP Transistors Similar to 2N2907 M19500/558-01 CONNECTION DIAGRAM
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CHQ2907
2N2907
M19500/558-01
MIL-S-19500/558
M19500/558-02
CHQ2907
100kHz
02140U
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BUW11
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53= 31 0026515 165 b'lE D APX BUW11 BUW11A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a SOT93 envelope, intended for use in converters, inverters, switching regulators, motor control systems etc.
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BUW11
BUW11A
BUW11
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Untitled
Abstract: No abstract text available
Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.
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BBS33F;
3D93Sf
BD937F;
BD939F
BD941F
711002b
OT186
BD934F,
BD936F,
BD938F,
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PDF
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2SC2802
Abstract: 2808 transistor n2818
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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Te-25
2SC2802
2808 transistor
n2818
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M9409
Abstract: transistor 342 G motorola 2N5643
Text: MOTOROLA SC XST RS/ R F 4bE D L3 b 7 2 S4 OGIMÜTE 2 MOTOROLA . ' P - 3 3 " 11 • S E M IC O N D U C T O R TECHNICAL DATA 2N5643 The RF Line 40 W - 175 M H z RF POWER TRANSISTOR N P N S IL IC O N NPN SILICO N RF POWER TRANSISTOR designed p rim a rily fo r w id e b a n d large-signal a m p lifie r stages in
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2N5643
M9409
transistor 342 G
motorola 2N5643
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Untitled
Abstract: No abstract text available
Text: International S Rectifier Provisional Data Sheet No. PD-9.1417 IRFN3710 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL Product Summary 100 Volt, 0.028£2, HEXFET Part Number B V dss RDS on Id IR F N 37 10 100 V 0 .0 2 8 Q 45A Generation 5 H E X F E T s from International Rectifier
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IRFN3710
5S452
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ht 25 transistor
Abstract: BUK638-500B
Text: PHILIPS INTERNATIONAL bSE T> m 711D62L. DDfc,4311 Philips Semiconductors PowerMOS transistor Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery
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BUK638-500B
711DflSb
ODb431S
ht 25 transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: MS2553C 35 Watts, 50 Volts Pulsed Avionics 1025 to 1150 MHz GENERAL DESCRIPTION The MS2553C is a medium power COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization and diffused ballasting for proven highest MTTF.
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MS2553C
MS2553C
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