B 557 PNP TRANSISTOR Search Results

B 557 PNP TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

B 557 PNP TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC557A Abstract: BC556B BC558B transistor BC 557B BC556 BC557 BC557C BC558 transistor BC 557 BC558 MOTOROLA Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B BC556/D* BC556B BC558B transistor BC 557B BC557 BC557C BC558 transistor BC 557 BC558 MOTOROLA	PDF
transistor BC 557B Abstract: BC557A BC556B BC557 MOTOROLA BC557C 557B BC557/558 BC 557 PNP TRANSISTOR circuits operation of BC557 TRANSISTOR pin out TRANSISTOR bc557 Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B BC556/D* transistor BC 557B BC556B BC557 MOTOROLA BC557C 557B BC557/558 BC 557 PNP TRANSISTOR circuits operation of BC557 TRANSISTOR pin out TRANSISTOR bc557	PDF
BC5578 Abstract: transistor Bc 557 transistor bc557 pins details information of BC558 transistor bc 557 datasheet transistor bc 558 pnp BC557 equivalent transistor bc 556 datasheet C 557 transistor bc 558 application Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 556, A, B BC 557, 8, A, B, C TO-92 EBC APPLICATION PNP General Purpose Transistors, Especially Suited For Use in Driver Stages of Audio	Original	BC556 C-120 BC5578 transistor Bc 557 transistor bc557 pins details information of BC558 transistor bc 557 datasheet transistor bc 558 pnp BC557 equivalent transistor bc 556 datasheet C 557 transistor bc 558 application	PDF
TRANSISTOR C 557 B Abstract: operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558 Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 Lead-free: BC556L/BC557L/BC558L Halogen-free:BC556G/BC557G/BC558G ORDERING INFORMATION Normal BC556-x-T92-B	Original	BC556/557/558 BC556, BC556L/BC557L/BC558L BC556G/BC557G/BC558G BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K TRANSISTOR C 557 B operation of BC557 TRANSISTOR TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR transistor 557 b free BC557 transistor bc558 features of pnp transistor BC557 transistor c 557 transistor c 558	PDF
bc557 Abstract: BC557A BC557 MOTOROLA transistor BC 557B bc556b bc556 motorola BC 557 PNP TRANSISTOR circuits BC556 BC557C BC558B Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B BC556/D* bc557 BC557 MOTOROLA transistor BC 557B bc556b bc556 motorola BC 557 PNP TRANSISTOR circuits BC557C BC558B	PDF
BC557A Abstract: BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45	Original	BC556/D BC556 BC557A BC558B 226AA) BC558 BC558ZL1 O-226) \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B	PDF
operation of BC557 TRANSISTOR Abstract: TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557 Text: UNISONIC TECHNOLOGIES CO., LTD BC556/557/558 PNP SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 ORDERING INFORMATION Normal BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B	Original	BC556/557/558 BC556, BC556-x-T92-B BC556-x-T92-K BC557-x-T92-B BC557-x-T92-K BC558-x-T92-B BC558-x-T92-K BC556L-x-T92-B BC556L-x-T92-K operation of BC557 TRANSISTOR TRANSISTOR C 557 B transistor c 557 BC557 SWITCHING TRANSISTOR transistor 557 b of pnp transistor BC557 B 557 PNP TRANSISTOR transistor bc558 features free BC557 TRANSISTOR 557	PDF
2SB1557 Abstract: 2SD2386 Text: TOSHIBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 557 Unit in mm 3.2 ±0.2 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
APPLICATION OF BC548 transistor Abstract: BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor BC546 for bc548 npn transistor Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ᴌHigh Voltage : BC546 VCEO=65V. ᴌFor Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25ᴱ	Original	BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 APPLICATION OF BC548 transistor BC547 BC548 BC548 B 001 BC548 pnp transistor bc547 pnp transistor bc547 features pnp bc547 transistor for bc548 npn transistor	PDF
BC5578 Abstract: BC556-558 BC556 BC557 BC558 T1 BC558 Text: IS / IECQC 700000 IS / IECQC 750100 IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP SILICON PLANAR EPITAXIAL TRANSISTORS BC 556, A, B BC 557, 8, A, B, C TO-92 EBC Boca Semiconductor Corp.	Original	BC556 BC5578 BC556-558 BC556 BC557 BC558 T1 BC558	PDF
APPLICATION OF BC548 transistor Abstract: bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR BC546 for bc548 npn transistor Text: SEMICONDUCTOR BC546/7/8 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . B C A FEATURES ・High Voltage : BC546 VCEO=65V. ・For Complementary With PNP Type BC556/557/558. N E K G J D MAXIMUM RATING Ta=25℃	Original	BC546/7/8 BC546 BC556/557/558. BC547 BC548 BC546 100MHz APPLICATION OF BC548 transistor bc547 pnp BC547 BC548 pnp transistor pnp bc547 transistor bc548 pnp BC548 BC548 TRANSISTOR for bc548 npn transistor	PDF
2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 3.2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF
Untitled Abstract: No abstract text available Text: 2SB1557 TOSHIBA TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 15.9MAX. High Breakdown Voltage : V^EO = —140 V (Min.) Complementary to 2SD2386 ¿ 3 .2 ±0.2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SB1557 2SD2386	PDF
2SB1557 Abstract: 2SD2386 Text: TO SH IBA 2SB1557 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 03.2 ±0.2 1 5.9 M A X . High Breakdown Voltage : VcEO = —140 V (Min.) Complementary to 2SD2386 MAXIMUM RATINGS (Tc = 25°C)	OCR Scan	2SB1557 2SD2386 2SB1557	PDF

transistor BC 667 Abstract: transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247 Text: - asc î • öE35bG5 o o o m ^ b a « s i e û - D PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 SIEMENS AKTIEN6ESELLSCHAF- f"-2$ - 2./ ' for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in	OCR Scan	235b05 BC556-BC560 BC5561' Q62702-C692 BC556VI Q62702-C692-V3 BC556A Q62702-C692-V1 BC556B Q62702-C692-V2 transistor BC 667 transistor BC 247 transistor BC 245 TRANSISTOR bc 657 BC 667 bc667 transistor bc 658 transistor BC 567 transistor BC 660 BC 247	PDF
BC557 Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C	OCR Scan	BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC	PDF
TOSHIBA Transistor Silicon PNP Epitaxial Type Abstract: 2SB1557 2SD2386 Text: 2SB1557 TOSHIBA TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE D ARLING TO N POWER TRANSISTOR 2 S B 1 557 Unit in mm POWER AMPLIFIER APPLICATIONS • • 3.2 ± 0 .2 15.9M AX High Breakdown Voltage : VcEO = —140V (Min.) Complementary to 2SD2386 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SB1557 --140V 2SD2386 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1557	PDF
transistor B 560 Abstract: BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560 Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER • HIGH VO LTAG E: BC556, V CEo = -65V • LO W NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-B ase C apacitance	OCR Scan	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor B 560 BC 557 PNP TRANSISTOR transistor bc 558 pnp TRANSISTOR C 557 B transistor c 557 transistor bc 557 c le transistor 557 b B 557 PNP TRANSISTOR TRANSISTOR 557 TRANSISTOR BC 560	PDF
Untitled Abstract: No abstract text available Text: SYMSEMI SEMICONDUCTOR T O -92 Plastic Encapsulate Transistors BC 556 ,A ,B ,C BC 557 , B BC 558 , B TRANSISTOR PNP TO — 92 f1 — q> ei s j FEATURES Power d is s ip a tio n Pcm : 0.625 W (Tamb=25 °C) C o lle c to r c u rre n t I cm : “0. 1 A C o lle c to r base v o lta g e	OCR Scan	BC558 BC556 270TYP 050TYP	PDF
transistor bc 488 Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B	PDF
TRANSISTOR C 557 B Abstract: transistor c 557 B 557 PNP TRANSISTOR transistor 557 b Transistor Bc556 bc556 transistor transistor c 558 ic 558 of pnp transistor BC557 PNP BC558 Text: UTC BC556/557/558 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * High Voltage: BC556, VCEO=-65V 1 TO-92 1: COLLECTOR 2: BASE 3: EMITTER ABSOLUTE MAXIMUM RATINGS Ta=25°C, unless otherwise specified PARAMETER SYMBOL Collector-base voltage	Original	BC556/557/558 BC556, BC556 BC557 BC558 QW-R201-051 TRANSISTOR C 557 B transistor c 557 B 557 PNP TRANSISTOR transistor 557 b Transistor Bc556 bc556 transistor transistor c 558 ic 558 of pnp transistor BC557 PNP BC558	PDF
transistor c 557 Abstract: TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR Text: BC556/557/558/559/560 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier • High Voltage: BC556, VCEO = -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings	Original	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor c 557 TRANSISTOR C 557 B B 560 PNP TRANSISTOR transistor B 560 transistor c 558 TRANSISTOR C 557 B W 65 B 557 PNP TRANSISTOR	PDF
BC557 Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557 Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC557 transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557	PDF
of transistor bc558 Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560 Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 of transistor bc558 bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560	PDF

B 557 PNP TRANSISTOR Search Results

B 557 PNP TRANSISTOR Result Highlights (5)

B 557 PNP TRANSISTOR Datasheets Context Search

BC557A

transistor BC 557B

BC5578

TRANSISTOR C 557 B

bc557

BC557A

operation of BC557 TRANSISTOR

2SB1557

APPLICATION OF BC548 transistor

BC5578

APPLICATION OF BC548 transistor

2SB1557

Untitled

2SB1557

transistor BC 667

BC557

TOSHIBA Transistor Silicon PNP Epitaxial Type

transistor B 560

Untitled

transistor bc 488

TRANSISTOR C 557 B

transistor c 557

BC557

of transistor bc558