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    B 595 TRANSISTOR Search Results

    B 595 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    B 595 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR S1d

    Abstract: SCT-595
    Text: SMBTA 42M NPN Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 92M PNP 3 2 1 VPW05980 Type Marking SMBTA 42M s1D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595


    Original     		VPW05980 SCT-595 Oct-14-1999 EHP00842 EHP00843 TRANSISTOR S1d SCT-595 PDF

    NPN S2D

    Abstract: SCT-595 SCT59
    Text: SMBTA 92M PNP Silicon High-Voltage Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 42M NPN 3 2 1 VPW05980 Type Marking SMBTA 92M s2D Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595


    Original     		VPW05980 SCT-595 Oct-14-1999 EHP00881 EHP00882 NPN S2D SCT-595 SCT59 PDF

    SCT-595

    Abstract: VPW05980
    Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking SMBTA 06M s1G Pin Configuration 1=B 2=C 3=E Package 4=n.c. 5 = C SCT-595 Maximum Ratings


    Original     		VPW05980 SCT-595 EHP00821 EHP00819 EHP00820 EHP00815 Oct-14-1999 SCT-595 VPW05980 PDF

    VPW05980

    Abstract: No abstract text available
    Text: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking SMBTA 56M s2G Pin Configuration 1=B 2=C 3=E Package 4 n.c. 5 = C SCT-595 Maximum Ratings


    Original     		VPW05980 SCT-595 Package10 Oct-14-1999 EHP00852 EHP00850 EHP00851 EHP00846 VPW05980 PDF

    Q62702-A3473

    Abstract: SCT-595
    Text: SMBTA 06M NPN Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 56M PNP 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 06M s1G Q62702-A3473 Package 1 = B 2 = C 3 = E 4=n.c. 5 = C SCT-595


    Original     		VPW05980 Q62702-A3473 SCT-595 EHP00821 EHP00819 EHP00820 EHP00815 Jun-08-1998 Q62702-A3473 SCT-595 PDF

    Q62702-A3474

    Abstract: SCT-595
    Text: SMBTA 56M PNP Silicon AF Transistor 4 • High breakdown voltage • Low collector-emitter saturation voltage 5 • Complementary type: SMBTA 06M NPN 3 2 1 VPW05980 Type Marking Ordering Code Pin Configuration SMBTA 56M s2G Q62702-A3474 Package 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595


    Original     		VPW05980 Q62702-A3474 SCT-595 EHP00852 EHP00850 EHP00851 EHP00846 Q62702-A3474 SCT-595 PDF

    SCT-595

    Abstract: W331 marking E1 SCT-595
    Text: BCP 70M PNP Silicon AF Power Transistor 4  For AF driver and output stages  High collector current 5  Low collector-emitter saturation voltage 3 2 1 VPW05980 Type Marking BCP 70M PBs Pin Configuration Package 1 = E1 2 = C 3 = E2 4 = B 5 = C SCT-595 Maximum Ratings E1 and E2 connected externaly


    Original     		VPW05980 SCT-595 Feb-02-2000 SCT-595 W331 marking E1 SCT-595 PDF

    Untitled

    Abstract: No abstract text available
    Text: 8 -3 2 U N C-2A DIM MILLIMETER A 5.71 H 1 1.52 26.16 J K L .38R 19.05 o 9.52 DIA 0.13 1.78 4.06 15.11 2.92 LD B C D E F G TOL INCHES .13 .13 .02 .13 .13 MAX .38 .225 .375 DIA .005 .070 .165 .595 .115 .005 .005 .001 .005 .005 MAX .015 .13 .38 5' .060 1.030


    OCR Scan     		55GT8R PDF

    2N6665

    Abstract: MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953
    Text: an A M P com pany General Purpose Low Noise Bipolar Transistors Features Case Styles • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


    OCR Scan     		SL42E05 M220S 0001fl11 2N6665 MA42001-509 2N6665-509 MA42181-510 2n5054 RF NPN POWER TRANSISTOR C 10-50 GHZ 2N2857 Model MA42001 ma42 transistor 2N3953 PDF

    21E sot

    Abstract: IC 3263 1303 SOT23
    Text: M an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • D esigned for 3-5 Volt O peration • U seable to 6 GHz in Oscillators • U seable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


    OCR Scan     		MA4T3243 MA4T324335 21E sot IC 3263 1303 SOT23 PDF

    MA42181-510

    Abstract: 2N5054 2N6665-509
    Text: M a n A M P icom pany General Purpose Low Noise Bipolar Transistors V3.00 Case Styles Features • Low Noise Through 1.5 GHz • Hermetic Package • Can Be Screened to JAN, JANTX, JANTXV Levels Description The series of Silicon NPN bipolar transistors are designed


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz


    OCR Scan     		MA4T3243 MA4T324335 PDF

    sot23 1303

    Abstract: IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335
    Text: Bipolar High fT Low Voltage NPN Silicon Transistors MA4T3243 Series V3.00 Case Styles Features ● ● ● ● ● ● ● Designed for 3-5 Volt Operation Useable to 6 GHz in Oscillators Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz Useful for Class C Amplifiers


    Original     		MA4T3243 OT-23 MA4T324335 sot23 1303 IC 3263 NPN bipolar junction transistors max hfe 2000 1272 hybrid 1303 SOT23 MA4T324335 PDF

    TRANSISTOR K 1507

    Abstract: No abstract text available
    Text: Preliminary Specifications 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2.00 SOT-23 Features ● ● ● ● ● 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel Description The MA4T6310 series of low current, high fT silicon NPN


    Original     		MA4T6310 OT-23 MA4T631039 OT-143 MA4T631039 TRANSISTOR K 1507 PDF

    MA4T636500

    Abstract: MA4T6365
    Text: M an A M P com pany Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • D esigned for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    OCR Scan     		MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636500 PDF

    Untitled

    Abstract: No abstract text available
    Text: VMÂCQM Preliminary Specifications m an AM P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V1.A SOT-23 Features • • • • • 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel


    OCR Scan     		MA4T6310 OT-23 PDF

    MA4T636533

    Abstract: transistor sot-23 2613 MA4T6365
    Text: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    Original     		MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613 PDF

    mount chip transistor 332

    Abstract: SOT-23 TRANSISTOR 548 MA4T64500
    Text: Silicon Bipolar High fT Low Noise Microwave Transistor MA4T645 Series MA4T645 Series Silicon Bipolar High fT Low Noise Microwave Transistors Features • • • • • • • Case Style fT to 9 GHz Low Noise Figure High Associated Gain Hermetic and Surface Mount Packages Available


    Original     		MA4T645 mount chip transistor 332 SOT-23 TRANSISTOR 548 MA4T64500 PDF

    MA4TF50

    Abstract: MA4TF5005 RS 434 071 x-band transistor transistor mesfet
    Text: General Purpose 0.5 µm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features ● ● ● ● ● Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description The MA4TF50 is an n-type GaAs depletion mode Metal


    Original     		MA4TF50 MA4TF5005, MA4TF5000, MA4TF5005 MA4TF5005 RS 434 071 x-band transistor transistor mesfet PDF

    MA4T64500

    Abstract: No abstract text available
    Text: M an A M P com pany Silicon Bipolar High fT Low Noise Microwave Transistors MA4T645 V3.00 Case Styles Features • • • • • • fT to 9 GHz Low Noise Figure High A ssociated Gain Hermetic and Surface Mount Packages Available Can be Screened to JANTX, JANTXV Equivalent Levels


    OCR Scan     		MA4T645 MA4T645 MA4T64539 OT-143 MA4T64500 PDF

    b 595 transistor

    Abstract: transistor 5 Amp 700 volt MA4T24300 transistor b 595 MA4T24335
    Text: Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistor MA4T243 Series MA4T243 Series Silicon Bipolar High fT Low Noise Medium Power 12 Volt Transistors Features • • • • • Case Style Low Phase Noise Oscillator Transistor 200 mW Driver Amplifier Transistor


    Original     		MA4T243 MA4T24300 b 595 transistor transistor 5 Amp 700 volt transistor b 595 MA4T24335 PDF

    gs 069 0605

    Abstract: MA4TF50 MA4TF5005 transistor mesfet x-band transistor
    Text: M a n A M P c o m p an y General Purpose 0.5 |im N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features • • • • • Low Noise Figure High A ssociated Gain High Maximum Available Gain D esigned for Battery Operation Useful to Ku-Band


    OCR Scan     		MA4TF50 4TF5005, MA4TF5000, MA4TF5000 MA4TF5005 gs 069 0605 MA4TF5005 transistor mesfet x-band transistor PDF

    t636

    Abstract: 557 sot143 T636 A S 223 858 015 636
    Text: an A M P com pany Low Operating Voltage, High FT Bipoiar Microwave Transistors MA4T6365 V2.00 Case Styles Features • • • • • Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and


    OCR Scan     		MA4T6365 MA4T6365 OT-143 MA4T636539 t636 557 sot143 T636 A S 223 858 015 636 PDF

    TRANSISTOR K 1507

    Abstract: No abstract text available
    Text: Preliminary Specifications an A M P company 3 Volt, Low Noise High fT Silicon Transistor MA4T6310 Series V 2 .00 Features • • • • • SOT-23 1.5 dB Noise Figure at 0.5 mA 13 dB Gain at 1 GHz 14 GHz fT Low Cost Plastic Package Available on Tape and Reel


    OCR Scan     		MA4T6310 OT-23 TRANSISTOR K 1507 PDF