B 647 TRANSISTOR Search Results

B 647 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

B 647 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IC 651 Abstract: BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651 Text: 5bE D PHILIPS INTERNATIONAL Philips Components B D S 643/645/647/649/651 Data sheet status Product specification date o f issue April 1991 m 7110ÛEb DQ4314b 17T • PHIN r-33-z^j NPN Silicon Darlington power transistors DESCRIPTION PINNING -SOT223 DESCRIPTION	OCR Scan	DD4314b BDS643/645/647/649/651 r-33-z OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 IC 651 BDS645 BD8643 BDS647 Darlington NPN Silicon Diode BDS643 BDS649 BDS651	PDF
Untitled Abstract: No abstract text available Text: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.	OCR Scan	bb53T31 BSS192 A/-10 bb53t MC073B	PDF
MAX2XX Abstract: BD645 BD646 BD648 BD649 BD650 BD651 BD652 sb 649 a 2 sb 647 Text: BD645; 647 BD649; 651 SILICON DARLINGTON POWER TRANSISTORS N-P-N e p ita x ia l base tran sistors in m o n o lith ic D a rlin g to n c irc u it fo r audio o u tp u t stages and general a m p lifie r and sw itch in g a p p lica tio n s; T 0 -2 2 0 plastic envelope. P-N-P co m p le m en ts are B D 646, B D 648,	OCR Scan	BD645; BD649; O-220 BD646, BD648, BD650 BD652. BD645 MAX2XX BD646 BD648 BD649 BD651 BD652 sb 649 a 2 sb 647	PDF
BD 649 Abstract: darlington bd 645 B0643 B0645 BD647 b 647 a c bd649 BD 645 BD643 bd650 Text: BD 643 - BD 645 ' BD 647 - BD 649 Silizium-NPN-Darlington-Leistungstransistoren Silicon NPN Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage	OCR Scan		PDF
BO 649 Abstract: BD 104 darlington bd 645 TOP-66 b 647 c BD 649 bd647 BD64S Q62702-D376 BD 104 NPN Text: - 25C D • 0235bQS 00043Ô7 7 « S I E Û _ NPN Silicon Darlington Transistors T-33-29 SIEMENS AKTIEN GESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase power darlington transistors 62.5W BD 643, BD 645, BD 647, and BD 649 are monolithic NPN silicon epibase power darlington	OCR Scan	0235bQS T-33-29 OP-66) 643/BD 645/BD BD643. 0QQ43 T-33-29 BD647 BO 649 BD 104 darlington bd 645 TOP-66 b 647 c BD 649 BD64S Q62702-D376 BD 104 NPN	PDF
BD 649 Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65 Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington	OCR Scan	fl23SLQS T-33-29 OP-66) 643/BD 645/BD BD647. BD843, BD645. BD647, BD 649 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65	PDF
Untitled Abstract: No abstract text available Text: Philips Com ponents Datasheet status Product specification date of issue April 1991 BDS643/645/647/649/651 NPN silicon Darlington power transistors PINNING -SOT223 DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in SOT223, intended for general	OCR Scan	BDS643/645/647/649/651 -SOT223 OT223, BDS644/646/648/650/652. bbS3T31 0034bt bbS3T31 0034bl0 DQ34bll	PDF
IC 651 Abstract: BDS643 BDS645 BDS647 BDS649 BDS651 Text: Philips Com ponents BDS643/645/647/649/651 Data sheet status Product specification date o f issue AprS 1991 NPN silicon Daiiington power transistors PINNING -SO T223 DESCRIPTION DESCRIPTION base collector emitter collector PIN 1 NPN epitaxial base transistors in a	OCR Scan	BDS643/645/647/649/651 OT223, BDS644/646/648/650/652. -SOT223 BDS643 BDS645 BDS647 BDS649 BDS651 IC 651	PDF
BD645 Abstract: bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646 Text: SEMICONDUCTORS BD643/645/647/649/651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD643 BD645 BD647 BD645 bd647 BD649 darlington bd647 BD643 BD651 bd650 bd649 BD644 BD649 equivalent BD646	PDF
transistor bd650 Abstract: BD648 BD646 BD652 BD644 BD650 IC 651 Text: BD643/645/647/649/651 SILICON NPN DAELINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application.	Original	BD643/645/647/649/651 O-220 BD644, BD646, BD648, BD650 BD652 BD644 BD646 BD648 transistor bd650 BD648 BD646 BD652 BD644 IC 651	PDF
BD651 Abstract: No abstract text available Text: BD643; BD645; BD647; BD649; ^ BD651_ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Darlington circuit and housed in a TO-220 envelope. They are intended fo r output stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651_ O-220 BD644, BD646, BD648, BD650 BD651	PDF
B0645 Abstract: BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851 Text: BD643; BD645; BD647; BD649; Ì B D 6 5 1 _ J SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T0-220 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651 T0-220 BD644, BD646, BD648, BD650 B0645 BD85 transistor bd647 b0652 BD651 BD645 transistor bd646 BD649 80651 bd851	PDF
transistor BD6 Abstract: bd645 transistor BD643 H 649 A transistor Text: J PHILIPS INTERNATIONAL SbE D m BD643; BD645; BD647; BD649; BD651 _ 7110fi2b 0042'i5b 741 I IPHIN -r-j 7 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651 7110fi2b BD644, BD646, BD648, BD650 transistor BD6 bd645 transistor BD643 H 649 A transistor	PDF
lg bd645 Abstract: darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647 Text: BD643; BD645; BD647; BD649; BD651 PHILIPS I N T ERNATIONAL 5bE D • 7110fl2b 0 0 4 2 ^ 741 « R H I N SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a m onolithic Darlington circu it and housed in a T 0-22 0 envelope. They are intended fo r o u tp u t stages in audio equipment, general amplifiers, and analogue switching	OCR Scan	BD643; BD645; BD647; BD649; BD651 7110fl2b T0-220 BD644, BD646, BD648, lg bd645 darlington bd 645 BD649 philips bd649 PNP transistor BD649 B0645 BD645 BD643 BD646 BD647	PDF

B0646 Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660 Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington	OCR Scan	fl23Sb05 DQ43CI1 T-33-31 OP-66) 644/BD BD648, BD644. BO646. BO648. BD660 B0646 BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660	PDF
bd 640 Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650 Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington	OCR Scan	23SbOS DQ043C T-33-31 OP-66) U4J94 BD644, BD648, BD650 bd 640 TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650	PDF
Wakefield Abstract: THERMAL LINKS TO TO-5 Text: A e G c G W A KEFIELD ENGINEERING ^ P A m n A n a n te H iu ie iA n Components Division ^ 35 - m 60 Audubon Road, W akefield, MA 01880 Tel. 617 245-5900 TWX 710-348-6713 259 SERIES Series 259 Equalizing Links provide thermal connection but electrical separation for	OCR Scan		PDF
b 647 transistor Abstract: transistor b 647 c transistor M 839 Text: Central CXTA27 Semiconductor Corp. SURFACE MOUNT NPN SILICON DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications	OCR Scan	CXTA27 OT-89 100MHz CP307 14-November OT-89 b 647 transistor transistor b 647 c transistor M 839	PDF
Untitled Abstract: No abstract text available Text: 3 H A R R IS fCL644/645/646/647 ICL7644/7645/7646/7647 The ICL644, ICL645 and ICL646 are low power fixed +5V output step-up DC-DC converters designed for operation from very low input voltages. All control functions and a power FET are contained in the ICL644, ICL645 and	OCR Scan	fCL644/645/646/647 ICL7644/7645/7646/7647 MAX65X ICL644 ICL7644 IRF541	PDF
Untitled Abstract: No abstract text available Text: STANLEY ELECTRIC CO LTD 5SE D • 4b7fll5ß QQ0201Ö 57b B I I S T ínlei -r¿+t- c2> PHOTODARLINGTON TRANSISTOR PD302 Package Dimensions ■ FEATURES • • • HIGH SENSITIVITY (lc = 12mW TYP. HIGH DIRECTIVITY MOLDED EPOXY TYPE ■ APPLICATION • •	OCR Scan	QQ0201Ã PD302 02D2D	PDF
bft93 Abstract: marking x1 B 647 AC transistor Text: BFT93 PNP Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 to 30 mA. • Complementary type: BFR 93P NPN . C ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking	OCR Scan	BFT93 BFT93 OT-23 marking x1 B 647 AC transistor	PDF
PVAPOX Abstract: No abstract text available Text: S C S -T H O M S O N IIL IM « ! » BUZ71 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 95 x 95 mils METALLIZATION: Top Al Back A u/C r/N i/A u BACKSIDE THICKNESS: 6100 A DIE THICKNESS: 16 ± 2 mils PASSIVATION: P-Vapox BONDING PAD SIZE:	OCR Scan	BUZ71 16x18 PVAPOX	PDF
PD302 Abstract: Stanley Electric Text: STANLEY ELECTRIC CO LTD 55E D • 4b7fil5û SjÄKLEI GDD2Ü1Ô 57b M U S T 7 ^ -& 3 PHOTODARLINGTON TRANSISTOR_ PD302 Package Dimensions ■ FEATURES • • • HIGH SENSITIVITY lc = 12mW TYP. HIGH DIRECTIVITY MOLDED EPOXY TYPE ■ APPLICATION	OCR Scan	4b7fil56 PD302 PD302 Stanley Electric	PDF
1N5810 diode Abstract: No abstract text available Text: J2 HARRIS IC L 6 4 4 /6 4 5 /6 4 6 /6 4 7 ICL7644/7645/7646/7647 Features D escription • +5V @ 40mA from a Single Cell Battery. Note: Output Current can be Increased by Changing L2 See Table 1 The ICL644, ICL645 and ICL646 are low power fixed +5V output step-up DC-D C converters designed for operation	OCR Scan	ICL7644/7645/7646/7647 ICL644, ICL645 ICL646 ICL647, ICL644/7644, ICL645/764S, 1N5810 diode	PDF

B 647 TRANSISTOR Search Results

B 647 TRANSISTOR Result Highlights (5)

B 647 TRANSISTOR Datasheets Context Search

IC 651

Untitled

MAX2XX

BD 649

BO 649

BD 649

Untitled

IC 651

BD645

transistor bd650

BD651

B0645

transistor BD6

lg bd645

B0646

bd 640

Wakefield

b 647 transistor

Untitled

Untitled

bft93

PVAPOX

PD302

1N5810 diode