Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    B052009 Search Results

    B052009 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    siemens fet to92

    Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
    Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3545 DSFP-DN3545 B052009 siemens fet to92 dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G

    B052009

    Abstract: No abstract text available
    Text: Package Outline 3-Lead TO-39 Package Outline N2 ΦD ΦD1 Φa A β β Seating Plane 2 1 3 h 2 1 3 Φb α L j k Bottom View Symbol Dimension (inches) MIN NOM MAX α β 45O NOM 90O NOM Side View A Φa Φb ΦD ΦD1 h j k L .240 .190 .016 .350 .315 .009 .028


    Original     		PDF DSPD-3TO39N2, B052009. DSPD-3TO39N2 B052009 B052009

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode


    Original     		PDF VN2210 VN2210 DSFP-VN2210 D071411

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure


    Original     		PDF 2N6661 2N6661 DSFP-2N6661 C042711

    2N6661

    Abstract: No abstract text available
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N6661 2N6661 DSFP-2N6661 C042711

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process.


    Original     		PDF 2N6660 2N6660 DSFP-2N6660 C031411

    125OC

    Abstract: 2N6661
    Text: Supertex inc. 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N6661 2N6661 DSFP-2N6661 B032610 125OC

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► Excellent thermal stability


    Original     		PDF VN2210 VN2210 DSFP-VN2210 E082013

    sivn

    Abstract: VN2210 VN2210N2 VN2210N3-G jedec Package TO-39
    Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		PDF VN2210 VN2210 DSFP-VN2210 D031411 sivn VN2210N2 VN2210N3-G jedec Package TO-39

    125OC

    Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
    Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► ►► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and


    Original     		PDF 2N6660 2N6660 DSFP-2N6660 C031411 125OC Supertex Product Enhancement-Mode Vertical DMOS FET

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain Excellent thermal stability


    Original     		PDF VP2206 VP2206 DSFP-VP2206 D031411

    DSPD-3TO39N2

    Abstract: No abstract text available
    Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features ►► ►► ►► ►► ►► ►► ►► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds


    Original     		PDF VN2210 VN2210 DSFP-VN2210 D071411 DSPD-3TO39N2

    2206N2

    Abstract: 125OC VP2206 VP2206N2
    Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds High input impedance and high gain


    Original     		PDF VP2206 VP2206 DSFP-VP2206 C032610 2206N2 125OC VP2206N2

    2206n2

    Abstract: SIVP VP2206 VP2206N2 B06030
    Text: VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► The Supertex VP2206 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VP2206 VP2206 DSFP-VP2206 B060309 2206n2 SIVP VP2206N2 B06030

    DN5m

    Abstract: No abstract text available
    Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description High input impedance Low input capacitance Fast switching speeds Low on-resistance Free from secondary breakdown Low input and output leakage These depletion-mode normally-on transistors utilize


    Original     		PDF DN3545 DSFP-DN3545 B052009 DN5m

    2206N2

    Abstract: No abstract text available
    Text: Supertex inc. VP2206 P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ►► Free from secondary breakdown ►► Low power drive requirement ►► Ease of paralleling ►► Low CISS and fast switching speeds ►► High input impedance and high gain


    Original     		PDF VP2206 VP2206 DSFP-VP2206 E082313 2206N2

    125OC

    Abstract: 2N6660 Supertex Product Enhancement-Mode Vertical DMOS FET
    Text: Supertex inc. 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► ► General Description The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N6660 2N6660 DSFP-2N6660 B032610 125OC Supertex Product Enhancement-Mode Vertical DMOS FET

    SIVN2210

    Abstract: sivn 125OC VN2210 VN2210N2 VN2210N3-G
    Text: Supertex inc. VN2210 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► The Supertex VN2210 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF VN2210 VN2210 DSFP-VN2210 C032610 SIVN2210 sivn 125OC VN2210N2 VN2210N3-G