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    B175 TRANSISTOR Search Results

    B175 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    B175 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Y175

    Abstract: y349 Y351 u351 Y352 u175 Y-351 y-349 CB351 Y-350
    Text: ICM202B CIF/QCIF CMOS sensor with digital YUV output Data Sheet V2.0, February 2003 ICM202B CIF/QCIF CMOS image sensor with digital YUV output Data Sheet V2.0 IC Media Corporation IC Media Technology Corporation 545 East Brokaw Road San Jose, CA 95112, U.S.A.


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    PDF ICM202B ICM202B LCC48 ICM-202Bsa ICM-202Bta Y175 y349 Y351 u351 Y352 u175 Y-351 y-349 CB351 Y-350

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    Abstract: No abstract text available
    Text: IPB030N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 V 9H 0 J R 9H"[Z#$YMd +&( Y I9 .( 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&


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    PDF IPB030N08N3 931D9? CG9D389 381B75à D5CD54 D1B75Dà

    4b 5c marking

    Abstract: No abstract text available
    Text: BSC360N15NS3 G "%&$!"# 3 Power-Transistor Product Summary Features Q ' 3 81>>5< >? B=1<<5F5< Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D &  V 9H -( J R 9H"[Z#$YMd +. Y" I9 + 6 Q. 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q  T ? @5B1D9>7 D5=@5B1D EB5


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    PDF BSC360N15NS3 4b 5c marking

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    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y I9 ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5 Q฀)2 6B55฀<514฀@<1D9>7฀+?",฀3?=@<91>D


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    PDF IPA075N15N3 D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

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    Abstract: No abstract text available
    Text: IPB072N15N3 G IPP075N15N3 G IPI075N15N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( /&* Y I9 )( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPB072N15N3 IPP075N15N3 IPI075N15N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9?

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    Abstract: No abstract text available
    Text: IPD122N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ )*&* Y I ฀ -1 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPD122N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

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    Abstract: No abstract text available
    Text: IPA086N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀ 0&. Y I9 ,- 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPA086N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

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    Abstract: No abstract text available
    Text: IPB065N15N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( .&- Y I9 )+( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPB065N15N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

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    Abstract: No abstract text available
    Text: IPB031NE7N3 G TM  3 Power-Transistor Product Summary Features ?> Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC V 9H /- J R 9H"[Z#$YMd +& Y I9 ) 6 Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (&


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    PDF IPB031NE7N3 B53D96931D9? CG9D389 381B75à D5CD54 D1B75Dà 931D9?

    CCD MARKING

    Abstract: No abstract text available
    Text: IPA075N15N3 G Ie\Q "%&$!"#TM3 Power-Transistor Product Summary Features EMOWMSQ BM^WUZS V 9H - J R 9H"[Z#$YMd /&- Y" I9 ,+ 6 Q . 5BI <? G ? > B5C9CD 1>3 5 R 9H"[Z# Q   T ? @5B1D9>7 D5=@5B1D EB5 Q ) 2 6B55 <514 @<1D9 >7 + ? " , 3 ? =@<9 1>D Q * E1<96954 13 3 ? B49>7 D? $    


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    PDF IPA075N15N3 CCD MARKING

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    Abstract: No abstract text available
    Text: IPD180N10N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R ,?>=1H฀-( ฀ )0 Y I ฀ ,+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPD180N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

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    Abstract: No abstract text available
    Text: BSZ440N10NS3 G  3 Power-Transistor Product Summary Features V 9H J R 9H"[Z#$YMd , Y Q฀(@D9=9J54฀6?B฀43 43฀3?>F5BC9?> I9 )0 6 Q฀' 381>>5<฀>?B=1<฀<5F5< E=%IH9HDC%0


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    PDF BSZ440N10NS3 381B75à 931D9? D1B75Dà

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    Abstract: No abstract text available
    Text: IPB036N12N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀ ฀3?>F5BD5BC Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H *( J R 9H"[Z#$YMd +&. Y I9 )0( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀฀+9H"[Z#


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    PDF IPB036N12N3 381B75à CG9D389 D5CD54 D1B75Dà 931D9? D85BG9C5à

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    Abstract: No abstract text available
    Text: IPP070N08N3 G IPI070N08N3 G IPB067N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R ,?>=1H฀,& .&/ Y


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    PDF IPP070N08N3 IPI070N08N3 IPB067N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9?

    marking 9D

    Abstract: G973 marking eb5 EB5 MARKING
    Text: IPB260N06N3 G IPP260N06N3 G Ie\Q "%&$!"# 3 Power-Transistor Product Summary Features Q #451<6? B8978 6B5AE5>3 I CG9D389 >7 1>4 CI>3 B53 Q @D9=9J54 D53 8>? <? 7I 6? B    3 ? >F5BD5BC V 9H .( J R 9H"[Z#$YMd *. Y" I9 */ 6 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


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    PDF IPB260N06N3 IPP260N06N3 65AE5 marking 9D G973 marking eb5 EB5 MARKING

    aK 9AA diode

    Abstract: No abstract text available
    Text: IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R ,?>=1H฀,& 1&/ Y


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    PDF IPP100N08N3 IPI100N08N3 IPB097N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9? aK 9AA diode

    55b9

    Abstract: 55b9 sot23-5
    Text: IPB025N08N3 G  3 Power-Transistor Product Summary Features V 9H 0 J Q฀' 381>>5<฀>?B=1<฀<5F5< R 9H"[Z#$YMd *&- Y Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ (& I9 *( 6 @B5F9?EC฀5>79>55B9>7฀ C1=@<5฀3?45 ?E7(*8C(0C


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    PDF IPB025N08N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? 55b9 55b9 sot23-5

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    Abstract: No abstract text available
    Text: IPB027N10N3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H ( J R 9H"[Z#$YMd *&/ Y I9 )*( 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀ ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF IPB027N10N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

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    Abstract: No abstract text available
    Text: BSC360N15NS3 G  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R 9H"[Z#$YMd +. Y I9 + 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z# Q฀  ฀T฀?@5B1D9>7฀D5=@5B1DEB5


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    PDF BSC360N15NS3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9? D85BG9C5à

    Untitled

    Abstract: No abstract text available
    Text: IPP037N08N3 G IPI037N08N3 G IPB035N08N3 G  3 Power-Transistor Product Summary Features Q฀#451<฀6?B฀8978฀6B5AE5>3I฀CG9D389>7฀1>4฀CI>3 ฀B53 Q฀ @D9=9J54฀D538>?<?7I฀6?B฀ ฀3?>F5BD5BC V 9H 0( J R 9H"[Z#$YMd +&- Y I9 (


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    PDF IPP037N08N3 IPI037N08N3 IPB035N08N3 CG9D389 381B75à D5CD54 D1B75Dà 931D9?

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    Abstract: No abstract text available
    Text: IPB108N15N3 G IPP111N15N3 G IPI111N15N3 G TM  3 Power-Transistor Product Summary Features Q฀' 381>>5<฀>?B=1<฀<5F5< Q฀H35<<5>D฀71D5฀381B75฀H฀R 9H"[Z#฀@B?4E3D฀ & V 9H -( J R ,?>=1H฀-( )(&0 Y I9 0+ 6 Q฀.5BI฀<?G฀?> B5C9CD1>35฀R 9H"[Z#


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    PDF IPB108N15N3 IPP111N15N3 IPI111N15N3 381B75à D1B75Dà 931D9? CG9D389 B53D96931D9?

    b175 transistor

    Abstract: FAF 45 DIODE
    Text: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw •N Uninterruptible Power Supply X - f Servo & Spindle Drive for NC Machine Tools


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    PDF 6DI75M-050 I95t/R89) b175 transistor FAF 45 DIODE

    b175 transistor

    Abstract: b173 6DI75M-050 IS18 P460 T151 T810
    Text: 6DI75M-050 75A ‘ Outline Drawings POWER TRANSISTOR MODULE • t t f t : Features • ffih FE High DC Current Gain • High Speed Switching : A p p lic a tio n s ? General Purpose Inverter • mwnwmw Uninterruptible Power Supply Servo & Spindle Drive for NC Machine Tools


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    PDF 6DI75M-050 95t/R89 Shl50 b175 transistor b173 IS18 P460 T151 T810

    1736d

    Abstract: No abstract text available
    Text: 6DI75M-050 75A 'U ± '< h - y < 7 _ Y = 7 > '> ^ ^ ì>d. - ì V l £ f ' :£ ï > d , - ) v O utline Draw ings POWER TRANSISTOR MODULE F e a tu r e s • f f ih FE H igh DC C u rre n t Gain • H ig h S peed S w itc h in g : A p p lic a tio n s • ? G eneral P urpose Inverter


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    PDF 6DI75M-050 e9Ti30S3 1736d