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B20100G Abstract: B20100G diode B20100G AKA AKA B20100 B20100G on aka AKA B20100G B20100 AKA b20100 g B20100G diode AKA b20100 Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as	Original	MBRF20100CT MBRF20100CT/D B20100G B20100G diode B20100G AKA AKA B20100 B20100G on aka AKA B20100G B20100 AKA b20100 g B20100G diode AKA b20100	PDF

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B20100G

Abstract: B20100G diode B20100G AKA AKA B20100 B20100G on aka AKA B20100G B20100 AKA b20100 g B20100G diode AKA b20100
Text: MBRF20100CT Preferred Device SWITCHMODEt Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal- to- silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as

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MBRF20100CT MBRF20100CT/D B20100G B20100G diode B20100G AKA AKA B20100 B20100G on aka AKA B20100G B20100 AKA b20100 g B20100G diode AKA b20100

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