FU-622SLD
Abstract: fu 024 n FU-622 FU622SLD2M3 b34 diode
Text: • 001fl3üfl b34 ■ MITSUBISHI OPTICALDEVICES FU-622SLD-2M7/2M3/2M6/2M4 1.48 um PUMP LO MODULE WITH SINGLEMODE FIBER (EDFA) DESCRIPTION FEATURES Mitsubishi’s FU-622SLD series 1480nm laser diode modules are designed as optical pumping sources • Laser Diode specifically optimized fo r pump laser
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001fl3
FU-622SLD-2M7/2M3/2M6/2M4
FU-622SLD
1480nm
48urn
fu 024 n
FU-622
FU622SLD2M3
b34 diode
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SW24CXC20C
Abstract: No abstract text available
Text: lilESTCODE 4bE » SEMICONDUCTORS ih iI M J ITD'J'ISS 0D02b71 b34 « I iIESB DE SEMICONDUCTORS SW xxC/DXC20C - 0 ' 1 - 2 3 Capsule Rectifier Diode Consists of a diffused silicon element mounted in an hermetic ceramic cold welded capsule, Available in industry standard and
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0D02b71
SWxxC/DXC20C
SW24CXC20C
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DIODE MOTOROLA B34
Abstract: MTD3055EL B34 ZENER DIODE DIODE B34 B34 motorola 369A-10 AN569 MTD3055EL1 Mq-7
Text: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA h SEMICONDUCTOR TECHNICAL DATA _ Designer's Data Sheet MTD3055EL TM OS IV Power Field Effect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate
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MTD3055EL
DIODE MOTOROLA B34
MTD3055EL
B34 ZENER DIODE
DIODE B34
B34 motorola
369A-10
AN569
MTD3055EL1
Mq-7
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DIODE MOTOROLA B34
Abstract: MTD3055EL B34 motorola 369A-10 AN569 MTD3055EL1
Text: MOTOROLA SC XSTRS/R F bñE D • b3b7SSM üü^fl5m b34 ■ M O T b MOTOROLA m SEMICONDUCTOR _ TECHNICAL DATA MTD3055EL Designer's Data Sheet T M O S IV Pow er Field Effect Transistor Motorola Preferred Device N-Channel Enhancem ent-Mode Silicon Gate
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OCR Scan
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b3b7S54
MTD3055EL
DIODE MOTOROLA B34
MTD3055EL
B34 motorola
369A-10
AN569
MTD3055EL1
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b34 DIODE 412
Abstract: CM400HA-12E diode b34 BP107
Text: b4E D • 7 2 ^ 4 ^2 1 OODbbTfi b34 * P R X CM400HA-12E Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 „ .14 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43)41.14.1 P O W E R E X INC OUTLINE ORAWING
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CM400HA-12E
BP107,
Amperes/600
CM400HA-12E
b34 DIODE 412
diode b34
BP107
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gunn diodes
Abstract: gunn 4411 gunn diode 10.5 ghz
Text: NE W J A P A N R A D I O CO L T D MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POWER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw
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NJX40Q0
NJX4000
NJX4402,
CX4410,
4420U
NJX4410,
4420U
NJX4621
gunn diodes
gunn
4411
gunn diode 10.5 ghz
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DIODE marking 7AA
Abstract: No abstract text available
Text: m 14055452 DDi5]|ifi b34 International i «r Rectifier HEXFET Power M O S FE T • • • • • IN T E R N A T IO N A L pd-9.833 IRFI624G R E C T IF IE R Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating
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IRFI624G
S5452
QQ1S123
DIODE marking 7AA
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diode b34
Abstract: Gunn Diode gunn diodes NJX4410 x-band motion detector 4420H gunn effect b34 diode diode a4t gunn diode oscillator
Text: NEW JAPAN RA D I O CO LTD MSE D • bSbTflAB 0 0 0 1 1 7 b b34 INJRC LOW POW ER GUNN DIODES " " p NJX40Q0 Series 0 7 - U ■ Description NJX4000 Series low power Gunn diodes except NJX4402, 4403, 4404 are designed for in X -b an d or K.-band and cw or pulsed mode osillators. These Gunn diodes utilizing the bulk negative resistance effect can be easily obtained microwave
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OCR Scan
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000117b
NJX40Q0
NJX4000
NJX4402,
diode b34
Gunn Diode
gunn diodes
NJX4410
x-band motion detector
4420H
gunn effect
b34 diode
diode a4t
gunn diode oscillator
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73B34
Abstract: NDL7511P1 DIODE on B34 NDL7511 NDL7161 7511P
Text: NEC ELECTRONICS INC bEE 5 • L427S5S 0 0 3 7 ^ 7 3 b34 H N E C E PRELIMINARY DATA SHEET M F " / / L A S E R D IO D E M O D U L E N D L 7 5 1 1 P , N P L 7 5 11 P 1 InGaAsP MQW-DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION DESCRIPTION NDL7511P and NDL7511P1 are 1 310 nm newly developed Multiple Quantum Well (MQW structure pulsed laser diode
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L427S5S
NDL7511P
NDL7511P1
b4E7525
14-pin
NDL7101
NDL7111
NDL7500P
NDL7510P
NDL7501P
73B34
DIODE on B34
NDL7511
NDL7161
7511P
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smd DIODE B34
Abstract: DIODE B34 b34 diode B34 diode smd diode smd b34 smd diode s8 TWG4148AC-128W TWG4148AD-125WS TWG4148CD-126WT TWG4148T-16WS
Text: SMD Switching Diodes Arrays Multiple Terminals Peak Mark- Reverse ing Voltage Code Part No. Max. Reverse Current @ VR Max. Forward Voltage Drop @ IF SMD Diodes Max. Max. Diode Reverse CapaciPackRecovery tance Pinout age Time @1MHz Diag. 0V CT Trr 7" Reel
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TWG4148CD-128WT
TWG4148AD-125WS
TWG4148CD-126WS
TWG4148AC-128WS
TWG4148T-16WS
TWG4148CD-70WS
TWG4148SD-99WS
TWG4148AD-125W
TWG4148CD-126W
TWG4148AC-128W
smd DIODE B34
DIODE B34
b34 diode
B34 diode smd
diode smd b34
smd diode s8
TWG4148AC-128W
TWG4148AD-125WS
TWG4148CD-126WT
TWG4148T-16WS
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711 B34
Abstract: diode schottky B34 DO-214AB b34 MBRS340 b34 surface mount diode b34 G3060
Text: MBRS340 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
100OC
711 B34
diode schottky B34
DO-214AB b34
MBRS340
b34 surface mount
diode b34
G3060
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marking B34 diode SCHOTTKY
Abstract: SMAB34 diode schottky B34
Text: SEMICONDUCTOR SMAB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES ᴌLow Profile Surface Mount Package. H A ᴌFor Use in Low Voltage, High Frequency inverters, Free D ᴌLow Power Loss, High Efficiency.
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SMAB34
60MHz
marking B34 diode SCHOTTKY
SMAB34
diode schottky B34
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marking B34 diode SCHOTTKY
Abstract: b34 DIODE schottky diode b34 b34 diode diode marking b34 b34 diode NO SMAB34 DIODE ON SEMICONDUCTOR B34 DIODE on B34 diode schottky B34
Text: SEMICONDUCTOR SMAB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A D Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free E Wheeling, and Polarity Protection Applications.
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SMAB34
marking B34 diode SCHOTTKY
b34 DIODE schottky
diode b34
b34 diode
diode marking b34
b34 diode NO
SMAB34
DIODE ON SEMICONDUCTOR B34
DIODE on B34
diode schottky B34
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diode 526 b34
Abstract: diode b34 marking B34 diode SCHOTTKY b34 DIODE schottky diode marking b34 b34 MARKING b34 diode diode schottky B34
Text: SEMICONDUCTOR SMBB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications.
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SMBB34
diode 526 b34
diode b34
marking B34 diode SCHOTTKY
b34 DIODE schottky
diode marking b34
b34 MARKING
b34 diode
diode schottky B34
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MBRS340
Abstract: No abstract text available
Text: MBRS340 FAIRCHILD M IC D N D U C T Q R n SCHOTTKY POW ER RECTIFIER General Description: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
MBRS340
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diode 019 b34
Abstract: b34 diode NO b34 DIODE schottky marking B34 diode SCHOTTKY DIODE B34 DIODE ON SEMICONDUCTOR B34 SMAB34 DIODE on B34 diode schottky B34 diode marking b34
Text: SEMICONDUCTOR SMAB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A For Use in Low Voltage, High Frequency inverters, Free D Low Power Loss, High Efficiency. E Wheeling, and Polarity Protection Applications.
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SMAB34
diode 019 b34
b34 diode NO
b34 DIODE schottky
marking B34 diode SCHOTTKY
DIODE B34
DIODE ON SEMICONDUCTOR B34
SMAB34
DIODE on B34
diode schottky B34
diode marking b34
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PDF
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diode 526 b34
Abstract: b34 DIODE schottky
Text: SEMICONDUCTOR SMBB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.
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SMBB34
diode 526 b34
b34 DIODE schottky
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BB204B
Abstract: No abstract text available
Text: • bbS3^31 DDSbMDE flbl M A R X N AUER PHILIPS/DISCRETE BB204B BB204G b'lE D SILICON PLANAR VARIABLE CAPACITANCE DOUBLE DIODES The BB204B and BB204G are double diodes with common cathode in a plastic TO-92 variant, primarily intended for electronic tuning in band II f.m. . They are recommended for stages where large signals
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BB204B
BB204G
BB204B
BB204G
0D2b40H
002bMQS
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marking B34 diode SCHOTTKY
Abstract: DIODE B34 b34 DIODE schottky diode marking b34
Text: SEMICONDUCTOR SMCB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES ・Low Profile Surface Mount Package. B C ・Low Power Loss, High Efficiency. ・For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.
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SMCB34
AEC-Q101.
marking B34 diode SCHOTTKY
DIODE B34
b34 DIODE schottky
diode marking b34
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PDF
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diode b34
Abstract: b34 DIODE schottky marking B34 diode SCHOTTKY SMCB34 b34 diode diode schottky B34 b34 MARKING 711 B34 diode marking b34
Text: SEMICONDUCTOR SMCB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications.
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SMCB34
diode b34
b34 DIODE schottky
marking B34 diode SCHOTTKY
SMCB34
b34 diode
diode schottky B34
b34 MARKING
711 B34
diode marking b34
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PDF
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diode schottky B34
Abstract: Mark B34 DO-214AB b34 b34 surface mount mbrs34o
Text: MBRS340 P A IR G H II-D M ICDNDUCTDR i DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIE! General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high
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OCR Scan
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MBRS34Ã
diode schottky B34
Mark B34
DO-214AB b34
b34 surface mount
mbrs34o
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PDF
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DIODE B36
Abstract: marking B34 diode SCHOTTKY diode marking b34 DIODE MOTOROLA B34 marking b34 b34 DIODE schottky motorola package marking diodes b34 diode schottky B34 DIODE B34 b34 marking
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBRS340T3 M BRS360T3 S u rfa c e M ount S c h o ttk y Pow er R ectifier Motorola Preferred Device . . . employing the Schottky Barrier principle in a large area metal-to-siiicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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MBRS340T3,
MBRS360T3
DIODE B36
marking B34 diode SCHOTTKY
diode marking b34
DIODE MOTOROLA B34
marking b34
b34 DIODE schottky
motorola package marking diodes b34
diode schottky B34
DIODE B34
b34 marking
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PDF
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FAIRCHILD MBRS340
Abstract: MBRS340 diode b34 Mark B34
Text: MBRS340 DISCRETE POWER AND SIGNAL TECHNOLOGIES SCHOTTKY POWER RECTIFIER General Description: Features: Schottky Barrier Diodes make use of the rectification effect of a metal to silicon barrier. They are ideally suited for high frequency rectification in switching regulators & converters.
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MBRS340
FAIRCHILD MBRS340
MBRS340
diode b34
Mark B34
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Untitled
Abstract: No abstract text available
Text: 7 ^ 1 g M 3 00051*13 57T TRANSISTOR MODULE OCA15QA/QBB150A40/60 UL;E76102 M QCA150A and QBB150A is a dual Darlin gton power transistor module with two high speed, high power Darlington transis tors. Each transistor has a reverse paral leled fast recovery diode.
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OCA15QA/QBB150A40/60
E76102
QCA150A
QBB150A
QCAI50A--Series-connected
QBBI50A
400/600V
QCA150A/QBB150A
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