TC58FVM5T3AFT65
Abstract: No abstract text available
Text: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 × 8 bits or as 2097152 × 16 bits. The TC58FVM5T2A/B2A/T3A/B3A features
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TC58FVM5
32MBIT
TC58FVM5T2A/B2A/T3A/B3A
33554432-bit,
TC58FVM5T3AFT65
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ba60
Abstract: TC58FVM5B2A TC58FVM5T2A TC58FVM5T3AFT65 TC58FVM5
Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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Original
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TC58FVM5
32MBIT
TC58FVM5T2A/B2A/T3A/B3A
33554432-bit,
ba60
TC58FVM5B2A
TC58FVM5T2A
TC58FVM5T3AFT65
TC58FVM5
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XB-70
Abstract: TC58FYM5T2A TC58FVM5B2A TC58FVM5T2A
Text: TC58FYM5 T/B (2/3) A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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Original
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TC58FYM5
32MBIT
TC58FYM5T2A/B2A/T3A/B3A
33554432-bit,
XB-70
TC58FYM5T2A
TC58FVM5B2A
TC58FVM5T2A
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TOSHIBA TC58 cmos memory -NAND
Abstract: ba60 TC58FVM5B2A TC58FVM5T2A 33554432-BIT TOSHIBA TC58
Text: TC58FVM5 T/B (2/3) A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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Original
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TC58FVM5
32MBIT
TC58FVM5T2A/B2A/T3A/B3A
33554432-bit,
TOSHIBA TC58 cmos memory -NAND
ba60
TC58FVM5B2A
TC58FVM5T2A
33554432-BIT
TOSHIBA TC58
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PDF
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BA57
Abstract: CA1113
Text: TC58FYM5 T/B (2/3) A (FT/XB) 70 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FYM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable
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Original
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TC58FYM5
32MBIT
TC58FYM5T2A/B2A/T3A/B3A
33554432-bit,
BA57
CA1113
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PDF
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TC58FVM5T2ATG65
Abstract: TC58FVM5B2ATG65 tc58fvm5t2atg TC58FVM5T3ATG65 tc58fvm5t2at TC58FVM5B2ATG TC58FVM5B3ATG65 TC58FVM5B2A TC58FVM5T2A 007000H-007FFFH
Text: TC58FVM5 T/B (2/3)A(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3
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Original
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TC58FVM5
32MBIT
TC58FVM5T2A/B2A/T3A/B3A
33554432-bit,
TC58FVM5T2A/B2A/T3A/B3
TC58FVM5T2ATG65
TC58FVM5B2ATG65
tc58fvm5t2atg
TC58FVM5T3ATG65
tc58fvm5t2at
TC58FVM5B2ATG
TC58FVM5B3ATG65
TC58FVM5B2A
TC58FVM5T2A
007000H-007FFFH
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transistor ba47
Abstract: BA60 2A00 ba37 diode ba63 TC58FVM5B2A TC58FVM5T2A TC58FVM5
Text: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3
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Original
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TC58FVM5
32MBIT
TC58FVM5T2A/B2A/T3A/B3A
33554432-bit,
TC58FVM5T2A/B2A/T3A/B3
transistor ba47
BA60
2A00
ba37 diode
ba63
TC58FVM5B2A
TC58FVM5T2A
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PDF
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TC58FVM5B2A
Abstract: TC58FVM5T2A tc58 flash
Text: TC58FVM5 T/B (2/3)A(FT/XB)65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32MBIT (4M x 8 BITS/2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM5T2A/B2A/T3A/B3A is a 33554432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4194304 words × 8 bits or as 2097152 words × 16 bits. The TC58FVM5T2A/B2A/T3A/B3
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Original
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TC58FVM5
32MBIT
TC58FVM5T2A/B2A/T3A/B3A
33554432-bit,
TC58FVM5T2A/B2A/T3A/B3
TC58FVM5B2A
TC58FVM5T2A
tc58 flash
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marking sm
Abstract: multifuse part marking Bourns
Text: March 31, 2003 Circuit Protection Solutions Bourns Rep District Sales Managers Bourns Rep Distributor Managers Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team e t a d p U IT CTION U C CIRPROTE Bourns Multifuse® MF-SM/33
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MF-SM/33
MF-SM/33
MF-SM100/33-2
MF-SM150/33-2
marking sm
multifuse
part marking
Bourns
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multifuse
Abstract: marking sm marking code SM diode B3A marking MARKING B3A General Semiconductor SM marking code mf marking code Sm SM marking code SM10
Text: March 31, 2003 Circuit Protection Solutions Bourns Rep District Sales Managers Bourns Rep Distributor Managers Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team e t a d p U IT CTION U C CIRPROTE Bourns Multifuse® MF-SM/33
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MF-SM/33
MF-SM/33
MF-SM100/33-2
MF-SM150/33-2
multifuse
marking sm
marking code SM diode
B3A marking
MARKING B3A
General Semiconductor SM
marking code mf
marking code Sm
SM marking code
SM10
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B3A SOT
Abstract: B3A sot23-5 AD8605 SOT23-5 B3A RU-14 B3A SOT23 AD8605ACB-REEL AD8605ACB-REEL7 AD8606 AD8608ARZ-REEL71
Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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AD8605/AD8606/AD8608
AD8608
AD8606
AD8605
OT-23
14-Lead
B3A SOT
B3A sot23-5
SOT23-5 B3A
RU-14
B3A SOT23
AD8605ACB-REEL
AD8605ACB-REEL7
AD8606
AD8608ARZ-REEL71
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AD8605
Abstract: AD8608 B3A sot23-5 B3A SOT SOT23-5 B3A AD8606 MS-012-AB RU-14 footprint soic_n 14 narrow
Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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AD8605/AD8606/AD8608
AD8608
AD8606
AD8605
OT-23
14-Lead
AD8608
B3A sot23-5
B3A SOT
SOT23-5 B3A
AD8606
MS-012-AB
RU-14
footprint soic_n 14 narrow
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5962-8984106KA
Abstract: GAL22V10C-10LD 5962-8984105la QPC22V10 GAL22V10D sample ATMEL 5962-8984106KA marking B3A 596289841123a 5962-89841043A 5962-8984104LA
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added K package. Added 04 device, two suppliers and 05 device, one supplier. Added vendor CAGE 34335 for devices 01L, 013, and 02L. Editorial changes throughout. Added vendor CAGE 34335 for devices 01K, 023, and 02K. Redrawn.
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5962-R079-93.
1FN41
1FN41
6S055
5962-8984106KA
GAL22V10C-10LD
5962-8984105la
QPC22V10
GAL22V10D sample
ATMEL 5962-8984106KA
marking B3A
596289841123a
5962-89841043A
5962-8984104LA
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PALC22V10D-25DMB
Abstract: PALC22V10D-20DMB BKA marking code 5962-89841 qml-38535 QPC22V10-20 5962-8984104LA MARKING B3A QPC22V10 596289841123a
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Added K package. Added 04 device, two suppliers and 05 device, one supplier. Added vendor CAGE 34335 for devices 01L, 013, and 02L. Editorial changes throughout. Added vendor CAGE 34335 for devices 01K, 023, and 02K. Redrawn.
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5962-R079-93.
1FN41
5962-R263-97
5962-R341-97
1FN41
6S055
PALC22V10D-25DMB
PALC22V10D-20DMB
BKA marking code
5962-89841
qml-38535
QPC22V10-20
5962-8984104LA
MARKING B3A
QPC22V10
596289841123a
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AD8605
Abstract: AD8606 AD8608 SOIC-14 SOIC-8 AD86081
Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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AD8605/AD8606/AD8608
AD8608
AD8606
AD8605
OT-23
RU-14
AD8606
AD8608
SOIC-14
SOIC-8
AD86081
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PDF
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AD8605
Abstract: AD8606 AD8608 SOIC-14
Text: Precision Low Noise CMOS Rail-to-Rail Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 µV maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 10 MHz High open-loop gain: 120 dB
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AD8605/AD8606/AD8608
AD8606
OT-23
14-Lead
AD8605
AD8606
AD8608
SOIC-14
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PDF
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AD8605
Abstract: AD8606 AD8608 SOIC-14 B3A sot23-5 B3A SOT23
Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 V maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 1000 V/mV High open-loop gain: 120 dB
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AD8605/AD8606/AD8608
AD8605)
AD8606)
AD8605
AD8606
RU-14
AD8605
AD8606
AD8608
SOIC-14
B3A sot23-5
B3A SOT23
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AD8605
Abstract: AD8606 AD8608 SOIC-14 MO-187-AA Package B3A sot23-5
Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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Original
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AD8605/AD8606/AD8608
AD8608
AD8606
AD8605
OT-23
14-Lead
RU-14
AD8606
AD8608
SOIC-14
MO-187-AA Package
B3A sot23-5
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"Microphone Preamplifier" 1.5V transistor
Abstract: AD8606 mark B6A AD8605 AD8608 SOIC-14
Text: Precision, Low Noise, CMOS, Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES FUNCTIONAL BLOCK DIAGRAMS TOP VIEW BUMP SIDE DOWN The combination of low offsets, low noise, very low input bias currents, and high speed makes these amplifiers useful in a
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Original
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AD8605/AD8606/AD8608
AD8608
AD8606
AD8605
OT-23
RU-14
"Microphone Preamplifier" 1.5V transistor
AD8606
mark B6A
AD8608
SOIC-14
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PDF
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ad8605
Abstract: 5v headphone AMPLIFIER CIRCUIT DIAGRAM
Text: Precision Low Noise, CMOS Rail-to-Rail, Input/Output Operational Amplifiers AD8605/AD8606/AD8608 FEATURES APPLICATIONS Low offset voltage: 65 V maximum Low input bias currents: 1 pA maximum Low noise: 8 nV/√Hz Wide bandwidth: 1000 V/mV High open-loop gain: 120 dB
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Original
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AD8605/AD8606/AD8608
AD8605)
AD8606)
AD8605,
AD8606,
AD8608
14-Lead
RU-14
ad8605
5v headphone AMPLIFIER CIRCUIT DIAGRAM
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PDF
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D-10
Abstract: No abstract text available
Text: REVISIONS DATE YR-MO-DA DESCRIPTION LTO APPROVED 1987 OCT 7 C o nvert to m i l i t a r y draw ing fo rm a t. Add case o u t lin e Z , change case o u t lin e 3 le a d f i n i s h from C to A f o r vendor p a r t number AM2909A/B3A. Add vendor CAGE number 50088 to d ra w in g ._
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OCR Scan
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AM2909A/B3A.
MIL02
7013X
AM2909A/B3A
TS2909AMEB/C
701ZX
09A/BYA
D-10
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PDF
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D-10
Abstract: No abstract text available
Text: REVISIONS DATE YR-MO-DA DESCRIPTION LTO APPROVED 1987 OCT 7 C o nvert to m i l i t a r y draw ing fo rm a t. Add case o u t lin e Z , change case o u t lin e 3 le a d f i n i s h from C to A f o r vendor p a r t number AM2909A/B3A. Add vendor CAGE number 50088 to d ra w in g ._
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OCR Scan
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AM2909A/B3A.
7013X
AM2909A/B3A
TS2909AMEB/C
701ZX
09A/BYA
D-10
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PDF
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b3a transistor
Abstract: Transistor Bo 47 MARKING B3A marking b3n
Text: UMB3N IMB3A Transistor, digitai, dual, PNP, with 1 resistor Features Dimensions Units : mm available in UMT6 (UM6) and SMT6 (IMD, SC-74) package UMB3N (UMT6) 2.0±0.2 |l.3±0Jj package marking: UMB3N and IMB3A; B3 0 .6 5 I w (2 ) («B BBC i t package contains two independent
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OCR Scan
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SC-74)
DTA143TKA)
SC-70)
SC-59)
b3a transistor
Transistor Bo 47
MARKING B3A
marking b3n
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PDF
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pal20ra10mjs
Abstract: PAL16C1ML m38510 8506504RA PAL20L10AMJS 8412909LA PAL20L8AMJS PAL12L6MJ 8412906LA 16R8A
Text: Military PAL Devices JAN 3 8 5 1 0 and Standard M ilitary Drawing Program Advanced Micro Devices and Monolithic Memories are active participants in the JAN 38510 and Standard Military Drawing SMD Program. The idea behind the SMD Program is to stan dardize MIL-STD-883, Class B microcircuits where fully qualified
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OCR Scan
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MIL-STD-883,
product680301KA
962-86803013A
962-87528012A
5962-8752802RA
962-87528022A
5962-8752802SA
5962-8752803RA
962-87528032A
5962-8752803SA
pal20ra10mjs
PAL16C1ML
m38510
8506504RA
PAL20L10AMJS
8412909LA
PAL20L8AMJS
PAL12L6MJ
8412906LA
16R8A
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PDF
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