1620CTR
Abstract: common anode MUR diodes 1610CTR MUR1610CTR MUR1620CTR diode 160a motorola 221A-06 MUR1605CT MUR1605CTR MUR1615CTR
Text: MOTOROLA fciME » • SEMICONDUCTOR TECHNICAL DATA b3b725S OOflbM'ib TbS ■MOT? MOTOROLA SC DIODES/OPTO M UR1605CTR M UR1610CTR M UR1615CTR M UR1620CTR S w itch m o d e Dual Ultrafast Power Rectifiers . . . designed for use in negative switching po w er supplies, inverters and as free w h e e l
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b3b725S
MUR1605CTR
MUR1610CTR
MUR1615CTR
MUR1620CTR
15CTC
MUR1605CTR,
MUR1610CTR,
MUR1615CTR,
1620CTR
common anode MUR diodes
1610CTR
MUR1620CTR
diode 160a motorola
221A-06
MUR1605CT
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Motorola 417
Abstract: BAS116LT1 BAS116LT3 lp "sot23 marking motorola" a01102
Text: MOTOROLA SC DIODES/OPTO bûE ]> • b3b725S 00073^1 M*îT ■■ M0T7 Order this data sheet by BAS116LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information BAS116LT1 Sw itching Diode Motorola Preferred Device This switching diode has the following features:
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b3b725S
BAS116LT1
BAS116LT3
inch/10
BAS116LT1/D
BAS116LT1
OT-23
O-236AB)
Motorola 417
lp "sot23 marking motorola"
a01102
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ANSI Y14.5
Abstract: No abstract text available
Text: MOTOROLA SC LOGIC SS E D b3b725S D0Ô4MSÛ L Order this data sheet b y MC74F269/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C 74F269 Advance Information 8-Bit Bidirectional Binary Counter J S U F F IX C E R A M IC C A S E 759-01 The M C74F269 is a fully synchronous 8-stage up/down counter featuring a
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b3b725S
MC74F269/D
74F269
C74F269
Pr029
751E-03
MC74F269
C71536
ANSI Y14.5
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2N6147
Abstract: Case 175-03 376 motorola 2N5571
Text: I w TOROLA I ^ SC -cTiODES/OPTOJ 636725S MOTOROLA SC »T|b3b725S OOT'IDOD 1 <DIODES/OPTO 0 1E 79000 D T " * S ' - / 'i r T r ia c s Silicon Bidirectional Triode Thyristors . . . designed prim a rily fo r industrial and m ilitary applications for the control of ac
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b3b725S
636725S
2N5571
2N5574
2N6145
2N6147
T4100M
T4110M
2N5574
Case 175-03
376 motorola
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H11AV1
Abstract: H11AV2 H11AV3 H11AV1A H11AV2A H11AV3A diode b3l
Text: MOTOROLA SC DIO D ES/O PTO b4E Ï • b3b725S 0 0 f lb b 43 S T P ■ f l O T ? MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4k TO ca VDE UL C SA SETI BS ® SEMKO DEMKO BABT NEM KO H 1 1 A V 1 ,A * [CTR = 100% Min] H 11 A V 2 ,A 6-Pin D IP O p to is o la to rs
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b3b725S
H11AV1
H11AV2
H11AV3
H11AV3A
H11AV1A
H11AV2A
H11AV3A
diode b3l
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BB209
Abstract: MV109 mv209
Text: MOTOROLA SC O I O D E S / O P T O Ï !' 6 36.7255 MOTOROLA ~ SC 34 ]>F|b3b725S OOBfllOS S | <D I O D E S / O P T O > 3 ^c 38105 Q £ *7' / ? SILICON TUNING DIODE DICE continued MVC109 DIE NO. LINE SOURCE — DV33 This die provides performance equal to or better than that of
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b3b725S
BB209
MV109
MV209
MV3102
MV3103
MVC109
MV109 mv209
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DM 0265 R
Abstract: CR708 MCR70
Text: M O T O R O L A SC D IO DE S/O PT O 25E D b3b725S OO&llbM S • ‘T ^ 2 , 5 " - / 3 MCR703 thru S ilic o n Controlled Rectifiers M CR708 Reverse B lockin g Triode Thyristors . P N P N devices designed for high volum e, low cost consum er applications such as
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b3b725S
MCR703
69A-04
CR708
DM 0265 R
CR708
MCR70
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MFE3003
Abstract: aade MFEC3003
Text: ~3M MOTOROLA SC -CDIODES/OPTO} 6 3 6 7 2 5 5 M O T O R O L A SC DE^b3b725S DIODES/OPTO ODBfiQ4ti 4 | ~ 34-C 3 8 0 4 6 r - FIELD-EFFECT TRANSISTORS DICE (continued) MFEC3003 DIE NO. LINE SOURCE — DFM115 This die provides performance equal to or better than that of
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b3b725S
DFM115
MFEC3003
MFE3003
MFE3003
aade
MFEC3003
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PDF
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1N45A
Abstract: 1N4765
Text: MOTOROL A SC iD IO DE S/O PTO} lb DE|b3b725S 0D7 Ö027 2 | - r - / j - ¿>1 1N4370 thru 1N4372 See Page 4-4 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N4549 thru 1N4564 See Page 4-23 LOW-LEVEL T E M P E R A T U R E -C O M P E N SA T E D ZEN E R R EF E R E N C E D IO D E S
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b3b725S
1N4370
1N4372
1N4549
1N4564
1N4565
1N4584
1N4765
1N4784
1N45A
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S353
Abstract: No abstract text available
Text: MOTOROLA SC DIODES/OPTO h4E D • b3b725S DOflSBMM fl'R * 1 1 0 1 7 SECTION 4.1.4 DATA SHEETS TRANSIENT VOLTAGE SUPPRESSORS — continued Section 4.1.4.1 Axial Leaded — continued SECTION 4.1.4.1.3 1500 WATT PEAK POWER M U L T IP L E P A C K A G E Q U A N T IT Y (M P Q )
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b3b725S
1N5908
1N6267
1N6303A,
5KE250A
1N6373
1N6389,
ICTE-45C,
MPTE-45C
S353
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC D I O D E S / O P T O BTE ]> Bi b3b725S Q0Ö2113 M B1 M0T 7 13 MOTOROLA SEMICONDUCTOR r TECHNICAL DATA MCR2323H,AH MCR2324H,AH MCR2326H,AH MCR2328H,AH M M urn¡a Discrete Military Operation Processed per MIL-S-19500/276 Silicon Controlled Rectifiers
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b3b725S
MCR2323H
MCR2324H
MCR2326H
MCR2328H
MIL-S-19500/276
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PDF
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OPTO-34
Abstract: No abstract text available
Text: M O T O R O L A SC i D I O D E S / O P T O J 6367255 MOTOROLA SC 34 <DIODES/OPTO MMCF2906, MMCF2906A MMCF2907, MMCF2907A dF | b3b725S 34C SILICON) 38185 ^ ^ DD3Û1ÔS D ^ FLIP -C H IP PIMP S W ITC H A N D A M P L IF IE R T R A N S IS T O R S F lip 'C h ip — General purpose P N P sw itching and a m p lifie r transistor
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b3b725S
MMCF2906,
MMCF2906A
MMCF2907,
MMCF2907A
CF2907A
CF2906
CF2906A
CF2907
CF2907A
OPTO-34
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PDF
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BZu 120
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD2837LT1/D SEMICONDUCTOR TECHNICAL DATA Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 CATHODE MAXIMUM RATINGS EACH DIODE Rating Symbol Value Unit VRM 75 Vdc Vr 30 50 Vdc >FM 450 300 mAdc io 150 100 mAdc Symbol
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MMBD2837LT1/D
MMBD2837LT1
MMBD2838LT1
--------------MMBD2837LT1/D
BZu 120
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMSD914T1/D SEMICONDUCTOR TECHNICAL DATA Sw itching Diode MMSD914T1 The switching diode has the following features: • SOD-123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time Motorola Preferred Device
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MMSD914T1/D
MMSD914T1
OD-123
OD-123
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BYT261PIV400M
Abstract: No abstract text available
Text: M OTOROLA Order this document by BYT261PIV-400M/D SEMICONDUCTOR TECHNICAL DATA U ltra fa s t Power R ectifiers BYT261PIV-400M D u al high v o lta g e re ctifie rs su ited fo r S w itc h m o d e P o w e r Supplies and other power converters. • Very Low Reverse Recovery Tim e
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BYT261PIV-400M/D
E69369
BYT261PIV-400M
BYT261PIV-400M
OT-227B
b3b72SS
BYT261PIV400M
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PDF
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12v to 220 v ac inverter
Abstract: MHPM7A30A60B Bridge rectifier BR 156 vqe 23 MHPM7A30E60DC3 12 volt dc to 220 volt ac inverter schematic Motorola diode book BT Motorola dlaob
Text: MOTOROLA Order this documenti by MHPM7A30A60B/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7A30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3) This module integrates a 3-phase input rectifier bridge, 3-phase
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MHPM7A30A60B/D
MHPM7A30E60DC3)
b3b72SS
12v to 220 v ac inverter
MHPM7A30A60B
Bridge rectifier BR 156
vqe 23
MHPM7A30E60DC3
12 volt dc to 220 volt ac inverter schematic
Motorola diode book
BT Motorola
dlaob
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PDF
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fw sot-23
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBD6050LT1/D SEMICONDUCTOR TECHNICAL DATA S w itc h in g D io d e MMBD6050LT1 3 o CATHODE H— o1 ANODE MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage Vr 70 Vdc Forward Current if 200 mAdc lFM surge 500 mAdc Symbol
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MMBD6050LT1/D
MMBD6050LT1
OT-23
O-236AB)
fw sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: M O T O R O L A SC D I O D E S / O P T O 3*ì£ ]> b 3 b 7 2 S S GOflSlOT 2 Ö M 0 T 7 T 'os-ll MOTOROLA SEMICONDUCTOR cz TECHNICAL DATA MBR6391HX, HXV Processed per MIL-S-19500/553 Schottky Power Rectifier Discrete Military Operation . . .designed for low-voltage, high-frequency inverters, free wheeling diodes and polarity
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MBR6391HX,
MIL-S-19500/553
DQ-203AA
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PDF
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pq3467
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Memory Driver Transistor MPQ3467 PNP Silicon Motorola Preferred Device fïïl fÌ3Ì [Ì2I ITTI fipl Í71 IT XoJ Lr\J PNP ,r y i r y i UJ L2J IÌJ LU L i] [è] E MAXIMUM RATINGS Rating Symbol Value Unit VCEO -40
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MPQ3467
O-116
pq3467
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PDF
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MOC8060
Abstract: ANSI 60 CE01 Motorola optoisolator lead form options
Text: MO TO R O L A SC D I O D E S / O P T O b3b7255 0GÔ312Ô G K3MOT? 3^E » Order this data sheet by MQC8060/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MOC8O6O 6-Pin DIP Optoisolator AC Input/Darlington Output This device consists of two gallium arsenide infrared emitting diodes connected in inverseparallel, optically coupled to a silicon photodarlington detector which has integral base-emitter
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b3b7255
MQC8060/D
E54915^
C13S0
OJJ20
730B-02
730C-02
730D-Q2
MOC8060
ANSI 60
CE01
Motorola optoisolator lead form options
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PDF
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mpf102
Abstract: mpf102 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF Amplifier N-Channel — Depletion MAXIMUM RATINGS Symbol Value VDS 25 Vdc Drain-Gate Voltage Vd G 25 Vdc Gate-Source Voltage Rating Drain-Source Voltage Unit vgs -2 5 Vdc Gate Current 'g 10 mAdc Total Device Dissipation @ Ta = 25°C
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O-226AA)
MPF102
b3b7255
mpf102
mpf102 equivalent
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PDF
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b2045
Abstract: B2045 motorola B2035 2045c Single Schottky diode b2045 2N6277
Text: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:
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MBR2035CT/D
B2035,
B2045
MBR2035CT
MBR2045CT
MBR2045CT
21A-06
T0-220AB)
3b725S
b2045
B2045 motorola
B2035
2045c
Single Schottky diode b2045
2N6277
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PDF
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b745
Abstract: B745 MOTOROLA b735 B735 MOTOROLA mbr745
Text: MOTOROLA Order this document by MBR735/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Pow er R ectifiers MBR735 MBR745 . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • •
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MBR735/D
MBR735
MBR745
MBR745
-220A
b3b725S
b745
B745 MOTOROLA
b735
B735 MOTOROLA
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MPXS4115A/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information Altim eter or Barometer Applications Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated The Motorola MPXS4115A series Manifold Absolute Pressure MAP sensor for
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MPXS4115A/D
MPXS4115A
115kPa
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