881-1 nec
Abstract: NE345L-20B NES1417-20B cd 17821 LA 7687 a sit 16250 NE72084 NE3451600 NES1417-10B NES1723-20B
Text: N E C / 1SE CALIFORNIA NEC D b4S7414 Q001S37 1 T -S 1 -9 0 L, S-BAND POWER G aAs MESFET NE345 SERIES FEATURES APPLICATIONS • C H IP O R P A C K A G E O P T IO N S • L-BAN D R A D A R • H IG H P out 1 0 W & 2 0 W • N ARRO W -BAN D C O M M U N IC A TIO N S
|
OCR Scan
|
b4S7414
G001S37
NE345
NE3451600
ofSiOz/SiNs72
S22-S21S12
NE345100
NE3451600
881-1 nec
NE345L-20B
NES1417-20B
cd 17821
LA 7687 a
sit 16250
NE72084
NES1417-10B
NES1723-20B
|
PDF
|
2SC1600
Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164
Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is
|
OCR Scan
|
b4S7414
NE57500
NE57510
NE57520
NE575
2SC1600
2SC1042
2SC1642
NE57520
321E
S21E
2SC164
|
PDF
|
1S1855
Abstract: NEC 1s1855 1S1857 1S1856 ND1551-7F snap-off diode ND1571-5F diode 5f DIODE E 7F ND1561-5F
Text: NE C/ 1SE D CALIFORNIA NEC b4S7414 0001*134 T 'O l - i £ ND1551-7F ND1561-5F ND1571-5F SILICON SNAP-OFF DIODE OUTLINE DIMENSIONS FEATURES Units in mm • U LTR A S H O R T R EV ER S E TU R N O N T IM E OUTLINE 5F • H IG H R E L IA B IL IT Y • LO W C O S T
|
OCR Scan
|
b427414
ND1551-7F
ND1561-5F
ND1571-5F
ND1551
ND1571-5F
ND1551-7F,
ND1561-5F,
1S1855
NEC 1s1855
1S1857
1S1856
snap-off diode
diode 5f
DIODE E 7F
|
PDF
|
PD1712
Abstract: NEC SIP 8pin JPB568G UPB568HA P8HA-254B
Text: N E C / C A LIFO R N IA 30E D bMa7Mm 0002114 a h n e c c .- T W S - 1 9 - / 3 1 GHz DIVIDE-BY-128/136 LOW POWER PRESCALER The ¿¿PB568C, the /¿PB568HA and the jjPB568G UPB568, UPB568HA are tw o-m odulus prescaleres fo r T V , C A T V and V T R , w h ich
|
OCR Scan
|
bM27Mm
DIVIDE-BY-128/136
UPB568,
UPB568HA
iPB568C,
PB568HA
jjPB568G
jjPD1700
/JPD1709,
PD1711,
PD1712
NEC SIP 8pin
JPB568G
UPB568HA
P8HA-254B
|
PDF
|
Microwave PIN diode
Abstract: 1SV36 ND6000 8542A N0627 1SV37 ND6361-3F ND6371-5E d6471
Text: N E C / 1SE D CALIFORNIA NEC H T-07-IS fc.427414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS qa - 25°o • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261, 71, 81, ND6361, 71 ND6461, 71
|
OCR Scan
|
b4E7M14
ND6000
ND6261
ND6361,
ND6461,
ND6481,
ND6651,
ND6261,
71r81,
Microwave PIN diode
1SV36
8542A
N0627
1SV37
ND6361-3F
ND6371-5E
d6471
|
PDF
|
NE21936
Abstract: NE21935 equivalent 2SC2367 NE219 NE21900 2SC2869 nec 2sc2218 NE21903 NE21937 2SC22174
Text: NE C/ CALI FORNI A 1SE D NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES / • LOW NOISE: 1 dB at 0.5 GHz 2.2 dB at 2 GHz ' NE219 SERIES The NE219 series of NPN silicon bipolar transistors is de signed for small signal amplifier and oscillator applications up
|
OCR Scan
|
QG013T3
r-31-
NE219
NE21936
NE21935 equivalent
2SC2367
NE21900
2SC2869
nec 2sc2218
NE21903
NE21937
2SC22174
|
PDF
|
2SC1253
Abstract: E74020 VHF power TRANSISTOR PNP TO-39 TRANSISTOR 2SC 733
Text: N E C / CALIFORNIA □MS7414 000134=1 G 1SE D NE74000 NE74014 NE74020 NPN MEDIUM POWER UHF-VHF TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • H IG H GAIN BANDW IDTH PRO DU CT: fr = 2.2 GHz The NE740 series of NPN silicon transistors is designed for
|
OCR Scan
|
MS7414
NE74000
NE74014
NE74020
NE740
E90115
NE74014
2SC12579
2SC1253
E74020
VHF power TRANSISTOR PNP TO-39
TRANSISTOR 2SC 733
|
PDF
|
1SS14
Abstract: 1SS156 1SS12 ND4131-5T ND4141 CP 022 ND ND4000 nd4132 743e 1SS15
Text: N E C / 15E D CALIFORNIA NEC • T -c rj~ ò 1 b45743i4 0001137 b SILICON SCHOTTKY MIXER/DETECTOR DIODE ND4000 SERIES ABSOLl TE MAXIMUM RATINGS FEATURES SYMBOLS • LOW MEDIUM BARRIERS Pt • PASSIVATED CONSTRUCTION • HIGH RELIABILITY Top Tj T sdr DESCRIPTION AND APPLICATIONS
|
OCR Scan
|
fci427414
ND4000
ND41S1
ND4151
ND4132
1SS14
1SS156
1SS12
ND4131-5T
ND4141
CP 022 ND
743e
1SS15
|
PDF
|
2SC1594
Abstract: NE77320 33B5 NE77300 NE77310 NE77320T S21E S22E J25-26 1400 88 pm
Text: N E C / CALIFORNIA b42741M 1SE D 0 0 0 1 3 LjE 3 NE77300 NE77310 NE77320 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • 2 WATTS POWER OUTPUT CLASS C AT 2 GHz The NE773 series of NPN medium power silicon transistors Is especially designed for broadband VHF and UHF amplifiers
|
OCR Scan
|
b42741M
00013LjE
NE77300
NE77310
NE77320
NE773
NE77310)
stud-strlpline55
2SC1594
NE77320
33B5
NE77320T
S21E
S22E
J25-26
1400 88 pm
|
PDF
|
20PM4
Abstract: NE985100 NE985200 NE985400
Text: N E C / CALIFORNIA NEC 15E D b427414 DOOlSb? T NE985 SERIES K-BAND POWER G aAs MESFET OUTLINE DIMENSIONS FEATURES NE985100 CHIP • CLASS A OPERATION 40 • HIGH OUTPUT POWER • HIGH LINEAR GAIN • HIGH POWER ADDED EFFICIENCY • HIG H RELIABILITY NE985200 (CHIP)
|
OCR Scan
|
h427414
00015b?
NE985
NE985100
NE985100
NE985200
NE985400
NE985200
NE985400
20PM4
|
PDF
|
NE1069L-4B
Abstract: NE710
Text: NEC/ CALIFORNIA t4S741M 1SE D NEC r-37'?0 00DlSb3 2 4W, L-S BAND POWER GaAs MESFET NE1069L-4B OUTLINE DIMENSIONS Units in mm FEATURES • CLASS A OPERATION OUTLINE T-38 • HIGH POWER OUTPUT • HIGH GAIN • HIGH POWER ADDED EFFICIENCY • HIGH RELIABILITY
|
OCR Scan
|
00DlSb3
NE1069L-4B
NE1069L-4B
b4S7414
00G15b4
NE710
|
PDF
|
NE202 circuit
Abstract: NE202 NE20200 NE20248 NE20283A NE202XX 1400 88 pm BH574
Text: L NEC N E C / 1SE D CALIFORNIA • b427414 OQOISÌO T'3l -¿S' S ULTRA LOW NOISE K-BAND HETERO JUNCTION FET NE202 SERIES OUTLINE DIMENSIONS FEATURES • LOW NOISE FIGURE: 1 dB TYP at f = 12 GHz NE202XX 1.2 dB TYP at f = 12 GHz (NE202XX-1.4) 1.8 dB TYP at f = 18 GHz (NE20248)
|
OCR Scan
|
b427414
NE202
NE202XX)
NE202XX-1
NE20248)
NE20283A)
NE202 circuit
NE20200
NE20248
NE20283A
NE202XX
1400 88 pm
BH574
|
PDF
|
2sc2065
Abstract: Low Distortion Amplifiers ne22 TRANSISTOR ne22 NE22100 NE22120 S21E NE221
Text: N E C / 1SE D CALIFORNIA NEC • V b 4a ?414 O D D i a a ? 4 NPN MEDIUM POWER UHF-VHF TRANSISTOR NE22100 NE22120 ABSOLUTE MAXIMUM RATINGS FEATURES SYMBOLS • ULTR A-LINEAR B R O A D -B A N D A M P L IF IE R • LO W D IS T O R T IO N A T H IG H PO W E R PERFORMANCE SPECIFICATIONS
|
OCR Scan
|
NE22100
NE22120
NE221
NE22120
100mA---
2sc2065
Low Distortion Amplifiers
ne22
TRANSISTOR ne22
S21E
|
PDF
|
NE02136
Abstract: 2SC2570 NE02135 equivalent 2sc2570 transistor NE02103 k427 2SC1560 2sc2351 equivalent LM5741 GHZ micro-X Package
Text: N E C / 1SE D CALIFORNIA r - 3 / '/ 5 b427414 000137S 1 NPN SILICON HIGH FREQUENCY TRANSISTOR T '3 i- I 7 NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco
|
OCR Scan
|
b427414
000137S
NE021
3l-17
NE02136
2SC2570
NE02135 equivalent
2sc2570 transistor
NE02103
k427
2SC1560
2sc2351 equivalent
LM5741
GHZ micro-X Package
|
PDF
|
|
|
NE76084
Abstract: NE760 NE76000 NE76083A S221 y427
Text: N E C / CALIFORNIA 1SE D NEC □4S7414 G D O l t m LOW NOISE Ku-K BAND G aAs MESFET 7 - r - 3 h 4 S NE760 SERIES FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE FIGURE NF = 1.6 dB TYP at f = 12 GHz The NE76000 provides a low noise figure and high associated
|
OCR Scan
|
4E7414
NE760
NE76000
NE76084
NE76083A
S221
y427
|
PDF
|
Microwave PIN diode
Abstract: N0627 1sv85 8542A 1SV36 ND6361-3F ND6371-5E T07 marking 1SV26 MARKING 8542a
Text: 'T - O l- lS N E C / 1SE CALIFORNIA NEC D H b457414 0001=147 1 MICROWAVE SILICON PIN DIODE ND6000 SERIES FEATURES ABSOLUTE MAXIMUM RATINGS • LOW, MEDIUM, & LONG LIFETIMES SYMBOLS PARAMETERS Vr Reverse Voltage ND6261,71, 81, ND6361, 71 ND6461, 71 ND6481, ND6651. 61
|
OCR Scan
|
fa4274m
ND6000
T-07-/S
ND6261
ND6361,
ND6461,
ND6481,
ND6651.
ND6261,
Microwave PIN diode
N0627
1sv85
8542A
1SV36
ND6361-3F
ND6371-5E
T07 marking
1SV26
MARKING 8542a
|
PDF
|
impatt diode
Abstract: 1ST23 ND487C2-3R nd487c1-3r ND487 ND8L60W1T impatt 1ST11 ND8M30-1N ND487C2-00
Text: N E C / CALIFORNIA NEC 1SE D b427414 OGOnbG 1 SILICON CW IMPATT DIODE V -0 7 1 1 ND8 SERIES OUTLINE DIMENSIONS FEATURES • HIGH POWER OUTPUT AND WIDE FREQUENCY SELECTION 3.50 W at 8 GHz 3.00 W at 11 GHz 2.20 W at 15 GHz 1.20 W at 20 GHz 0.70 W at 30 GHz 0.40 W at 40 GHz
|
OCR Scan
|
b427414
ND487C1-3R
ND487C2-00
ND487C2-3P
ND487C2-3R
ND487R1-00
ND487R1-3P
ND487R1-3R
ND487R2-00
ND487R2-3P
impatt diode
1ST23
ND487
ND8L60W1T
impatt
1ST11
ND8M30-1N
|
PDF
|
NE32000
Abstract: NE32084 NE32083A
Text: E C/ C A L I F O R N I A NEC 1SE D b42?m4 OQOlbOS r - 3 / - 2 S' 3 NE32000 NE32083A NE32084 LOW COST/LOW NOISE K-BAND HETERO JUNCTION FET OUTLINE DIMENSIONS FEATURES NE32000 CHIP • LOW NOISE FIGURE 1.2 dB TYP at f = 12 GHz (NE32083A) 1.3 dB TYP at f = 12 GHz (NE32084)
|
OCR Scan
|
NE32000
NE32083A
NE32084
NE32083A)
NE32084)
NE320
NE32000
NE32084
NE32083A
|
PDF
|
2SC1593
Abstract: 2SC1041 GE-64 NEC k 2134 transistor NE64300 NE64310 NE64320 V020 transistor BU 189
Text: N E C/. C A L I F O R N I A b427414 1SE D 0001343 T i ► rF' î NE64300 NE64310 NE64320 NPN MEDIUM POWER MICROWAVE TRANSISTOR r t FEATURES DESCRIPTION AND APPLICATIONS • H IG H O U T P U T P O W E R : 900 mW at 2 G Hz Th e NE643 series of NPN silicon medium power transistors is
|
OCR Scan
|
b427414
NE64300
NE64310
NE64320
NE643
NE64300)
NE64310)
NE64320)
2SC1593
2SC1041
GE-64
NEC k 2134 transistor
NE64320
V020
transistor BU 189
|
PDF
|
PB552C
Abstract: UPB552C uPB552 pb552
Text: NEC/ 3GE CALIFORNIA 3> fcjM274m 0002072 T «NECC T -* /s r-/9 -IZ LOW VOLTAGE, LOW POWER TWO-MODULUS PRESCALER C UPB552C DESCRIPTIO N The {¿PB552C is a V H F two-modulus prescaler intended for use in P L L digital tuning systems. Advanced bipolar process technology is utilized to realize high frequency operation with extremely low power
|
OCR Scan
|
bM274m
Q0QSD75
UPB552C
PB552C
34-8393/FAX
UPB552C
uPB552
pb552
|
PDF
|
2SA1424
Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and
|
OCR Scan
|
b427414
NE88900
NE88912
NE88933
NE88935
NE327
NE889
NE88900)
NE88935
2SA1424
2SA1228
G503
NE327
NE AND micro-X
2SA1223
|
PDF
|
8542A
Abstract: ND6281-3A ND6281-3D E 3A diode nec x-band diode 3D
Text: N E C / 1SE CALIFORNIA NEC D bM27Mm G O O nSB M ND6281-3A ND6281-3D X-BAND SILICON PIN DIODE FEATURES OUTLINE DIMENSIONS Units In mm OUTLINE 3A* • L O W D RIVING P O W E R • W ID E R F R E S IS T A N C E R A N G E 4.0 MIN.I. —— • LOW C O S T j?—
|
OCR Scan
|
ND6281-3A
ND6281-3D
ND6281-3A,
-j250
8542A
ND6281-3D
E 3A diode
nec x-band
diode 3D
|
PDF
|
230Z
Abstract: V3301 NEL230253 L230C NEL2300 NEL2301 NEL2302 NEL2303 2SG 111 TRANSISTOR 2SG 111
Text: NE C/ CALIFORNIA NEC 1SE D h 427 414 00 01 275 Ö T- 33-0? NEL2300 SERIES CLASS A, 2.3 GHz, 15 VOLT POWER TRANSISTOR ABSOLUTE MAXIMUM RATINGS FEATURES PARAMETERS SYMBOLS • HIGH LINEAR POWER: PidB = 2.8 W UNITS çta = 2 5 °g RATINGS • HIGH GAIN: G mb = 6.5 dB
|
OCR Scan
|
h427414
T-33-T-
NEL2300
Emitterj17
bHS7414
V3301
-r-33
NEL230353
230Z
V3301
NEL230253
L230C
NEL2301
NEL2302
NEL2303
2SG 111
TRANSISTOR 2SG 111
|
PDF
|