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    B52 TRANSISTOR Search Results

    B52 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    B52 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    B52 transistor

    Abstract: J174 J175 transistor j174 EQUIVALENT J175 j174 transistor PJ99 SMPJ174 SMPJ175
    Text: Databook.fxp 1/13/99 2:09 PM Page B-52 B-52 01/99 J174, J175 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Choppers ¥ Commutators ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    226AA SMPJ174, SMPJ175 B52 transistor J174 J175 transistor j174 EQUIVALENT J175 j174 transistor PJ99 SMPJ174 SMPJ175 PDF

    B52 transistor

    Abstract: MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package.


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    2SB736A OT-23 2SD780A. B52 transistor MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING PDF

    Hdd spindle motor

    Abstract: Fdd spindle motor circuit 300 AN3814K B52 transistor HDD spindle motor circuit an3814 FORWARD REVERSE 3 PHASE MOTOR operation 300 rpm DC motor AN8235 AN8235s
    Text: General Purpose Linear ICs • Motor Control Series continued Category Type No. Peak Operating Current Voltage Regular (V) Functions Applications Package No. Current Sensorless motordriver AN3813K 5 ±0.5 AN3814K 5 ± 0.5 AN3815K 5 ± 0.5 AN3860SA 3.0 —5.5


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    AN3813K AN3814K AN3815K AN3860SA AAN8221FB AAN8224SA AN8235S AN8236S AN6660 AN6660K Hdd spindle motor Fdd spindle motor circuit 300 AN3814K B52 transistor HDD spindle motor circuit an3814 FORWARD REVERSE 3 PHASE MOTOR operation 300 rpm DC motor AN8235 AN8235s PDF

    Untitled

    Abstract: No abstract text available
    Text: EMB52 Datasheet Complex Digital Transistors Bias Resistor Built-in Transistors l Outline Parameter DTr1 and DTr2 VCC -50V IC(MAX.) -100mA R1 47kΩ EMB52 R2 47kΩ (SC-107C) EMT6 l Features 1) Two DTA044E chips in a EMT6 package.


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    EMB52 -100mA SC-107C) DTA044E PDF

    TLP533

    Abstract: No abstract text available
    Text: TLP531,532 GaAs IRED S PHOTO-TRANSISTOR PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP531 and TLP532 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.


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    TLP531 TLP532 2500Vrms E67349 TLP533 TLP533 PDF

    B52 transistor

    Abstract: Bw5 transistor MARKING B52 transistor b54 2SB736 2SB736A 2SD780 2SD780A 2SB736AB51
    Text: NEC SILICON TRANSISTORS ELECTRON DEVICE 2 S B 7 3 6 .2 S B 7 3 6 A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE D IM EN SIO N S The 2SB736, 2SB736A are designed for use in small type equipments espe­ in millimeters


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    2SB736, 2SB736A 2SB736A 2SD780, 2SD780A 2SB736 J22686 --84M B52 transistor Bw5 transistor MARKING B52 transistor b54 2SD780 2SB736AB51 PDF

    2SB736

    Abstract: B52 transistor
    Text: SIUCON TRANSISTORS 2SB736,2SB736A AUDIO FREQUENCY POWER AMPLIFIER PNP SILICON EPITAXIAL TRAN SISTOR MINI M OLD DESCRIPTION P A C K A G E DIMENSIONS Th e 2 S B 7 36, 2 S B 7 3 6 A are designed fo r use in sm all ty p e equipm ents espe­ in millimeters 2 .8 ± 0.2


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    2SB736 2SB736A 2SB736, 2SB736A B52 transistor PDF

    BFR84

    Abstract: transistor bfr84
    Text: BFR84 _/ SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a metal TO-72 envelope w ith source and substrate connected to the case, intended fo r a wide range o f v.h.f. applications, such as v.h.f. television tuners, f.m. tuners,


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    BFR84 titiS3T31 0035T11 BFR84 transistor bfr84 PDF

    6V DC-AC Fluorescent lamp

    Abstract: STK4N25 BO12D G0731
    Text: / = T SCS-THOM SON ^ 7 # [MOrai>i[LiOT [MD<SS STK4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STK4N25 • . . . . V dss 250 V R d S o ii Id < 1 .1 Û 4A TYPICAL Ros(on) = 1 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


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    STK4N25 STK4N25 OT-82 OT-194 71Ec1S37 G0731Ã OT-194 00731flt 6V DC-AC Fluorescent lamp BO12D G0731 PDF

    Untitled

    Abstract: No abstract text available
    Text: b b 5 3 T 31 Philips Semiconductors ODSTSTS T f l 3 M A P X oductspecification VHF power transistor BLW30 N AMER PHILIPS/DISCRETE QUICK REFERENCE DATA RF performance at Tr t = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an


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    BLW30 MHA377 PDF

    B52 transistor

    Abstract: No abstract text available
    Text: Thal mLUM HEWLETT PACKARD Up to 6 GHz Medium Power Silicon Bipolar Transistor Chip Technical Data AT-42000 Features This device is designed for use in low noise, wideband amplifier, • High Output Power: mixer and oscillator applications 21.0 dBm Typical Pj iB at 2.0 GHz


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    AT-42000 AT-42000 44475AM 0017b54 B52 transistor PDF

    capacitor 104 PF disc

    Abstract: transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331
    Text: N AMER PHI LIPS/DISCRETE bTE T> m bb53^B]> 0028832 TD7 • IAPX BLU30/28 J l UHF POWER TRANSISTOR NPN silicon planar epitaxial transistor prim arily intended fo r use in radio transmitters in the 470 MHz communications band. Features • Multi-base structure and em itter ballasting resistors fo r an optim um temperature profile


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    BLU30/28 BLU30/28 OT119) capacitor 104 PF disc transistor T43 B52 transistor transistor d 1991 ar D 1991 AR apx 188 Transistor 5331 PDF

    MX0912B350Y

    Abstract: No abstract text available
    Text: 7=:3 3 —/s ’ Data sheet status Preliminary specification date of Issue June 1992 MX0912B350Y NPN Silicon planar epitaxial microwave power transistor SbE D PHILIPS INTERNATIONAL • 711DûEb ÜDHb3SM DESCRIPTION APPLICATION FEATURES • Interdigitated structure; high


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    MX0912B350Y 7110A2b ampl95 T-33-15 MX0912B350Y 711D6Eb D04b3L PDF

    B52 transistor

    Abstract: No abstract text available
    Text: 1DI3OMA-O5O 30a POWER TRANSISTOR MODULE • 4 M F e a tu re s ■ • h F E *''lS t' High DC Current Gain • ;*<'>-?■ v y x t ° —W jS v .' • 16» » High speed sw itching Insulated Type ■ f f l i É ’ A p p lic a t io n s Power Sw itching •


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    PDF

    MTP2955

    Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
    Text: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM


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    MTP3055E MTP2955 b3b7254 MTP2955 TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel PDF

    b32 siemens

    Abstract: disadvantages of 7805 80C552 siemens a55 80c552 instruction set RTC72421 SAB80C535 SAB80C537 miniMODUL 535 valvo capacitor
    Text: miniMODUL-537 Hardware-Manual Edition November 1993 A product of a PHYTEC Technology Holding company MiniMODUL-537 In this manual are descriptions for copyrighted products which are not explicitly indicated as such. The absence of the trademark  symbol does not infer that a


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    miniMODUL-537 L-006e D-55135 b32 siemens disadvantages of 7805 80C552 siemens a55 80c552 instruction set RTC72421 SAB80C535 SAB80C537 miniMODUL 535 valvo capacitor PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.427B International IOR Rectifier JANTX2N6790 HEXFET POWER MOSFET JANTXV2N6790 [REF:MIL-PRF-19500/555] [GENERIC:IRFF220] N - C H AN NEL 200 Volt, 0.80Q HEXFET Product Summary Part Number BV dss H E X F E T technology is the key to International


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    JANTX2N6790 JANTXV2N6790 MIL-PRF-19500/555] IRFF220] PDF

    74HC03A

    Abstract: Transistor motorola 513 TO-126 811b1
    Text: MOTOROLA SC LOGIC hit D • b3b?H52 OüIlbM'l bOD ■ H O T 4 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC54/74HC03A Quad 2-Input NAND Gate with Open-Drain Outputs High-Performance Silicon-Gate CMOS J SU FFIX C ER A M IC C A S E 632-06 The MC54/74HC03A is identical in pinout to the LS03. The device inputs are


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    MC54/74HC03A HC03A MC54/74HC03A 74HC03A Transistor motorola 513 TO-126 811b1 PDF

    2N3904 A30

    Abstract: 2N3904 A52 2N3904 a27 2N3904 B28 Mec R68 2N3904 A41 intel c206 MCH 2N3904 a26 intel c202 MCH 2N3904 B21
    Text: R Intel 840 Chipset Platform Memory Expansion Card MEC Design Guide July 2000 Document Number: 298239-001 ® Intel 840 Chipset Platform MEC R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


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    PDF

    RE8RB31BU

    Abstract: LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K
    Text: global specialist in energy management The architects of efficiency Singapore Mongolia Price List Catalogue 2013 Electrical Distribution, Automation & Control  ! % 3% %3      3'33,  3 3% %3 (  +3&-=33&2/=


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    197903476G) MN-EC1113 SG-PL0413 RE8RB31BU LC1D40A RE8TA41BU A9F74 b40 B2 RECTIFIER 400V LC1DT60A LC1-D50A LC1D40008 XUX0ARCTT16T LR2K PDF

    xr-1095

    Abstract: No abstract text available
    Text: EXAR XR-1095 Advanced Information Seven Band Graphic Equalizer Filter and Display Driver with Micro-Controller Interface GENERAL DESCRIPTION PIN ASSIGNMENT The XR-1095 is a single chip graphic equalizer and display driver containing sw itched-capacitor band­


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    XR-1095 XR-1095 16kHz. -10dB -12dB PDF

    Untitled

    Abstract: No abstract text available
    Text: là PER/COM PI74ALVCH16344 11111 111 11111 11111 1111111111111 111 111 11 111 111111111111111111 11111 11111 11111111111111111111 1111111111 111111 11111111 1-Bit to 4-Bit Address/Driver with 3-State Outputs Product Features Product Description • PI74ALVCH16344 is designed for low voltage operation


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    PI74ALVCH16344 56-pin PI74ALVCH16344 PI74ALVCH PS8166A PDF

    Untitled

    Abstract: No abstract text available
    Text: XR-1095 Seven Band G raphic Equalizer C Y iO D f m Filter ancl D isPlaV Driver with ^Controller Interface .the analog plus company September 1996-4 FEATURES APPLICATIONS • Single Chip Equalizer and Display Driver • Graphic Equalizers • Accurate Switched-Capacitor Filters


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    XR-1095 PDF

    20 channel GRAPHIC EQUALIZER Schematic Diagram

    Abstract: Vacuum Florescent Display Driver XR1095CP DISPLAY FLUORES Drivers
    Text: EX4R _ XR-1095 Advanced Information Seven Band Graphic Equalizer Filter and Display Driver with Micro-Controller Interface PIN ASSIGNMENT GENERAL DESCRIPTION The XR-1095 is a single chip graphic equalizer and display driver containing sw itched-capacitor band­


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    XR-1095 XR-1095 16kHz. 20 channel GRAPHIC EQUALIZER Schematic Diagram Vacuum Florescent Display Driver XR1095CP DISPLAY FLUORES Drivers PDF