Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    BSQ113D Search Results

    BSQ113D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n6719

    Abstract: No abstract text available
    Text: . . w . . bflF- High VoltageAmplifiers Device V CE0 sust (Volts) Min 300 k bSQ113D 003^532 hfiT « N S C 5 NATL SEHIC0ND (DISCRETE ) lc (mA) V CE(sal) lc 4 U (Volts) Min fT Max Mia (mA) 2N6719 500 40 30 MMBTA42 500 40 30 0.5 20 500 40 30 0.5 20 500


    OCR Scan     		PDF 2N6719 MMBTA42 MPSA42 MMBTA92 MPSA92 bSQ113D 2N5401 MMBT5401 2N5400 MPSL51

    NDS9936

    Abstract: Vi46 ab-1 national
    Text: N at i o n a l tß May 1996 Semiconductor" NDS9936 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9936 LS01130 125-C bS01130 NDS9936 Vi46 ab-1 national

    55b6

    Abstract: NDC631N
    Text: National J u ly 1 9 9 6 Semiconductor NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 4.1 A, 20 V. R ^ , = 0.06 Cl @ V GS = 4.5 V Rds,on, = 0.0 75 Cl @ V GS =2.7 V. These N-Channel lo g ic level enhancem ent m ode


    OCR Scan     		PDF NDC631N 55b6 NDC631N

    Untitled

    Abstract: No abstract text available
    Text: MPSA56 I MMBTA561 PZTA56 Discrete POWER & Signal Technologies National Semiconductor PZTA56 MMBTA56 MPSA56 SOT-23 SOT-223 Mark: 2G PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.


    OCR Scan     		PDF MPSA56 MMBTA56 PZTA56 MPSA56 MMBTA56 OT-23 OT-223 bSD1130 PSA56

    mpsa92 "sot23"

    Abstract: mpsa92
    Text: MPSA92 / MMBTA92 / PZTA92 Discrete POWER & Signal Technologies National e ? Semiconductor~ MMBTA92 MPSA92 PZTA92 SOT-23 SOT-223 Mark: 2D PNP High Voltage Amplifier This device is designed for high voltage driver applications. Sourced from Process 76. Absolute Maximum Ratings*


    OCR Scan     		PDF MPSA92 MMBTA92 PZTA92 MPSA92 MMBTA92 OT-23 OT-223 bSQ113D DD407 mpsa92 "sot23"

    bc2378

    Abstract: box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633
    Text: This Material Pro Electron Series Copyrighted 3> -i PRO ELECTRON SERIES Bipolar—see page 5-37 for JFET By Type No. Its BC107 Respective BC107A Case Styl« TO-18 TO-18 VCES* VC8 0 (VI Min 50 50 VCEO (V) Min V e BO (V) Min 45 6 45 6 'CES* 'CBO a V CB (Vi


    OCR Scan     		PDF tS0113D J15511 SD1130 bc2378 box33c b0345 b0348 b0735 B0346 b073b B0736 b0737 B0633

    bc807

    Abstract: BC807-40 BC807-25 BC807-16
    Text: Semiconductor" BC807-16 BC807-25 BC807-40 SOT-23 BC807-16 / BC807-25 / BC807-40 t? Discrete POWER & Signa l Technologies National B Mark: S A ./5 B ./5 C . PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 1.0 A. Sourced from Process 78.


    OCR Scan     		PDF BC807-16 BC807-25 BC807-40 OT-23 bc807 BC807-40