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    TAIYO YUDEN MBASU105SCH090CFNA01

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 9pF C0H 0402 0.55T Telecomm 2Term
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    Mouser Electronics MBASU105SCH090CFNA01 29,700
    • 1 $0.1
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    • 100 $0.016
    • 1000 $0.01
    • 10000 $0.008
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    TDK Corporation CGA2B2C0G1H090D050BA

    Multilayer Ceramic Capacitors MLCC - SMD/SMT CGA 0402 50V 9pF C0G 0.50pF AEC-Q200
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics CGA2B2C0G1H090D050BA 23,962
    • 1 $0.1
    • 10 $0.029
    • 100 $0.017
    • 1000 $0.013
    • 10000 $0.009
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    MACOM MABA-009488-61HWCA

    Audio Transformers / Signal Transformers 3-800MHz Il 1.5dB Impedance Ratio 1:4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MABA-009488-61HWCA 3,722
    • 1 $2.03
    • 10 $1.29
    • 100 $1.22
    • 1000 $1.07
    • 10000 $0.837
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    MACOM MABA-009180-500MHz

    Audio Transformers / Signal Transformers Flux Coupled 1:1 Transformer 0.4-500MHz
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    Mouser Electronics MABA-009180-500MHz 1,843
    • 1 $3.14
    • 10 $2.54
    • 100 $1.84
    • 1000 $1.71
    • 10000 $1.59
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    TE Connectivity BAT-HLD-009-SMT-TR

    Coin Cell Battery Holders Battery Holder AA SMT T&R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BAT-HLD-009-SMT-TR 646
    • 1 $0.87
    • 10 $0.861
    • 100 $0.861
    • 1000 $0.565
    • 10000 $0.475
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    BA 09 H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Drop-In Circulator 0.06 to 18GHz The content of this specification may change without notification 11/01/09 Drop- In Drop- In Circulator 0. 06 to 18GHz Fr eq. Ba nd Ins e rtion Ran ge Width Los s Is olation G Hz (MHz) (dB) (d B) max m in JX WBH X-D-6 0-1 2 0-2 0 -3 0


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    PDF 18GHz -D-12 -D-18 -D-80

    1t17

    Abstract: No abstract text available
    Text: Wideband Circulator 0.61 to 18GHz The content of this specification may change without notification 11/01/09 Coaxial Wideband Circulator 0.61 to 18GHz Fre q. Ba nd Ins e rtion Is ola tion Ra nge Wi Los s GHz (MHz ) (dB) (dB) m ax mi n V SWR For wa rd Re ve rse


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    PDF 18GHz HX-T-95 1t17

    IS42S16160

    Abstract: 42S16160
    Text: IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and


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    PDF IS42S16160 16Meg 256-MBIT 54-pin 54-ball IS42S16160-6TLI IS42S16160-7TLI IS42S16160 42S16160

    Untitled

    Abstract: No abstract text available
    Text: IS42S83200B IS42S16160B ISSI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2005 • Clock frequency: 166, 143 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a


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    PDF IS42S83200B IS42S16160B 32Meg 16Meg 256-MBIT

    Untitled

    Abstract: No abstract text available
    Text: ISSI IS45S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 143, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION SEPTEMBER 2005


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    PDF IS45S32400B 128-MBIT

    Untitled

    Abstract: No abstract text available
    Text: IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM DECEMBER 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


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    PDF IS42S32800D IS45S32800D 256Mb IS42S32800D, MO-207

    IS42S32400L-10BI

    Abstract: No abstract text available
    Text: IS42S16800L IS42S32400L ISSI 8Meg x16 & 4Meg x 32 128-MBIT PowerSaver SYNC DYNAMIC RAM FEATURES • Clock frequency: 143, 100, MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply


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    PDF IS42S16800L IS42S32400L 128-MBIT) latency0L-10T 100MHz IS42S16800L-7BI IS42S16800L-7TI IS42S16800L-10BI IS42S16800L-10TI IS42S32400L-10BI

    IS42S32800D

    Abstract: is42s32800d-75ebl
    Text: IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM APRIL 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


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    PDF IS42S32800D IS45S32800D 256Mb IS42S32800D, MO-207 IS42S32800D is42s32800d-75ebl

    IS42S81600B

    Abstract: 42S16800B IS42S16800B-7TLI 2MX16X4 IS42S16800B IS42S16800B-6TL
    Text: IS42S81600B IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM JUNE 2009 FEATURES • Clock frequency: 167, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


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    PDF IS42S81600B IS42S16800B 16Meg 128-MBIT 128Mb IS42S81600B 42S16800B IS42S16800B-7TLI 2MX16X4 IS42S16800B IS42S16800B-6TL

    IS42S32400E-6TL

    Abstract: IS42S32400E IS42S32400E-7T IS42S32400E-7TL IS45S32400E-7TLA1
    Text: IS42S32400E IS45S32400E 4M x 32 128Mb SYNCHRONOUS DRAM PRELIMINARY INFORMATION JANUARY 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge


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    PDF IS42S32400E IS45S32400E 128Mb IS42S32400E, MO-207 IS42S32400E-6TL IS42S32400E-7T IS42S32400E-7TL IS45S32400E-7TLA1

    IS45S32400B

    Abstract: 45S32400B 1MX32X4 6ba1
    Text: IS45S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM NOVEMBER 2009 FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


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    PDF IS45S32400B 128-MBIT 128Mb S45S32400B MO-207 IS45S32400B 45S32400B 1MX32X4 6ba1

    IS42S32400D

    Abstract: 42S32400D is42s32400d-6bli IS42S32400D-7TLI
    Text: IS42S32400D 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge MARCH 2009 OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed


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    PDF IS42S32400D 128-MBIT 128Mb rS32400D-7TI 86-Pin IS42S32400D-7TLI IS42S32400D-7BI IS42S32400D 42S32400D is42s32400d-6bli IS42S32400D-7TLI

    IS42S32800D

    Abstract: IS42S32800D-7BLI IS45S32800D IS42S32800D-7TL IS42S32800D-7TLI IS42S32800D-6TLI IS42S32800D7BLI IS42S32800D-7B is42s32800d-75ebl IS42S32800D-6BLI
    Text: IS42S32800D IS45S32800D 8M x 32 256Mb SYNCHRONOUS DRAM DECEMBER 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


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    PDF IS42S32800D IS45S32800D 256Mb IS42S32800D, MO-207 IS42S32800D IS42S32800D-7BLI IS45S32800D IS42S32800D-7TL IS42S32800D-7TLI IS42S32800D-6TLI IS42S32800D7BLI IS42S32800D-7B is42s32800d-75ebl IS42S32800D-6BLI

    IS42S32400B

    Abstract: 42S32400B IS42S32400B-6BLI IS42S32400B-7TLI
    Text: IS42S32400B 4Meg x 32 128-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 125, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY INFORMATION MARCH 2009


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    PDF IS42S32400B 128-MBIT 128Mb IS42S32400B-7TLI 86-Pin IS42S32400B-7BI 90-Ball IS42S32400B-7BLI IS42S32400B 42S32400B IS42S32400B-6BLI IS42S32400B-7TLI

    IS42S16160D

    Abstract: IS42S16160D-7TLI
    Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed


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    PDF IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg 16Meg 256-MBIT 256Mb IS42S83200D IS42S16160D IS42S16160D-7TLI

    IS42S32160B

    Abstract: IS42S32160B-6TL is42s32160 IS42S32160B-75EBLI
    Text: IS42S32160B IS45S32160B 16M x 32 512Mb SYNCHRONOUS DRAM DECEMBER 2009 FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


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    PDF IS42S32160B IS45S32160B 512Mb IS42S32160B, 11x13mm IS42S32160B IS42S32160B-6TL is42s32160 IS42S32160B-75EBLI

    IS42S81600

    Abstract: IS42S16800-7TL
    Text: IS42S81600 IS42S16800 16M x 8, 8M x16 MARCH 2009 128Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and


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    PDF IS42S81600 IS42S16800 128Mb IS42S81600 54-Pin 54-ball IS42S81600, IS42S16800-7TL

    is42s16320

    Abstract: IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130
    Text: IS42S86400B IS42S16320B, IS45S16320B 64M x 8, 32M x 16 DECEMBER 2009 512Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 512Mb Synchronous DRAM achieves high-speed


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    PDF IS42S86400B IS42S16320B, IS45S16320B 512Mb IS42/45S16320B IS42/45S16320B is42s16320 IS42S16320B-7BLI is42s16320b IS42S16320B-7TLI IS42S86400B IS42S86400B-7TL IS42S16320B-7BL MA3006 D1130

    1300313

    Abstract: JE 13003
    Text: b7 {DISCRETE/OPTO} 9 09 725 0 T OS HI BA D eT| TOTVHSG 000^355 5 | ~ D IS C R E T E / O P T O 6 7c 09355 ; D " Silicon EpitaxiaL P la n a r Ty pe 1SV100 Variable Capacitance Diode AM RADIO BAND TUNING APPLICATIONS. Unit in mm 4 .2 MAX. FEATURES: . High Capacitance Ratio : C]_v/c9V= 17(Min.)


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    PDF 1SV100 a55MAX. 1300313 JE 13003

    Untitled

    Abstract: No abstract text available
    Text: 2 ISO VIEW DA T E REV. E CN A P P ' D BY 3-3-09 B2 8677 TS 7-10-09 B3 8779 TRM NOTES: 1 . PLUG K I T C O N S I S T S OF: P R E - 1 N S E R T E D P L U G BODY W I T H S H I E L D L O A D BA R 2. MATERIALS: P L U G B O D Y : C L E A R P O L Y C A R B O N A T E , UL 9 4 - V O


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    PDF CT390035

    BE-2RQ1-A4

    Abstract: 1HP-125VAC 6201A
    Text: CATALOG LISTING MICRO SWITCH FREEPORT I LLI NOI S. U S A A DI VI S I ON OF B E - 2RQ1- A 4 SW ITCH -BA SIC HONEYWELL F E D . M FG. C O D E 91#2B HA RD EN ED STEEL PLUNGER - 1 5 / 3 2 - 3 2 UNS THREAD TO W ITHIN .094 OF SHOULDER < i — LOCKNUT .62 A C R O SS F L A T S X .09 T H IC K 2 / 2 \


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    PDF jcO-82133 OVERTRAVEL--------jQ94 5A-125 250VAC 1HP-125VAC; 2HP-250VAC 750VAâ 277VAC BE-2RQ1-A4 1HP-125VAC 6201A

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA {DISCRETE/OPTO} 9 09 72 50 TO SHI BA Sb DI SCR ETE/OPTO DE | ^ C H 7 2 S 0 S'ÓC U7553 2SC2553 SIL IC O N NPN T R IP L E D IF F U S E D TYPE INDUSTRIAL S W IT C H IN G S W IT C H IN G R E G U L A T O R AND H IG H VO LT A G E A P P L IC A T IO N S .


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    PDF U7553 2SC2553 DD07SS3 01d0/B13a0Sia) V9IHS01 0S2Z606

    Untitled

    Abstract: No abstract text available
    Text: 2 DA T E REV. E CN A P P ' D BY 4-25-06 B4 7598 TRM 7-10-09 B5 8779 TRM NOTES: I . PLUG K I T C O N S I S T S OF: P R E - 1 N S E R T E D P L UG BODY W I T H S H I E L D L O A D BA R G R OMM E T 36 2. MATERIALS: P L U G B O D Y : C L E A R P O L Y C A R B O N A T E , UL 9 4 -V 0


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    PDF CT390037

    Untitled

    Abstract: No abstract text available
    Text: 2 DA T E REV. E CN A P P ' D BY 1-6-06 B1 7426 TRM 7-10-09 B2 8779 TRM ISO VIEW NOTES: I . PLUG K I T C O N S I S T S OF: P R E - 1 N S E R T E D P L UG BODY W I T H S H I E L D L O A D BA R .35 2. MATERIALS: P L U G B O D Y : C L E A R P O L Y C A R B O N A T E , UL 9 4 - VO


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    PDF CT390039