25C20
Abstract: C541U A65 SMD BDP 281 od3 tube datasheet PSB 21150 F pin rd-58 S44 SMD sei smd resistors smd code aux n ba
Text: D at a S h ee t, D S 1, O ct . 20 01 SIUC-BA S in gl e C hi p I S D N U S B Co nt ro ll er - Basic PSB 2155 Version 1.3 Wired C o m m u n i ca t i o n s N e v e r s t o p t h i n k i n g . Edition 2001-10-01 Published by Infineon Technologies AG, St.-Martin-Strasse 53,
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D-81541
25C20
C541U
A65 SMD
BDP 281
od3 tube datasheet
PSB 21150 F pin
rd-58
S44 SMD
sei smd resistors
smd code aux n ba
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W9968CF
Abstract: No abstract text available
Text: W9968CF JPEG USB DUAL MODE CAMERA CHIP W9968CF JPEG USB Dual Mode Camera Chip Publication Release Date: May 1999 -1Revision A2 W9968CF Revision History Revision Issue Date Comments A1 April, 1998 Formal release. A2 May, 1999 Supports USB Spec. Rev. 1.1. Changed bcdUSB and bcdDevice
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W9968CF
0x0100
0x0110.
W9968CF
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Untitled
Abstract: No abstract text available
Text: COPYRIGHT TRP connector ALL RIGHTS REVISIONS RESERVED p LTR DESCRIPTION c MATER I ALS : C T 1r H O L S I L G SL L RA ç c um 9 PHOR I 8APR2QI 3 RL APVD KZ NG o BRONZE um um 9 LL RGB M I N BOARLS: DWN c C um LOGO CHANGE LLAMMAL I N S E M I - BR um o DATE
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S9HG70ET
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531-40046
Abstract: No abstract text available
Text: R E V 1S I O N S 5 3 1 - 40046-3 NOTES: DRAW ING I . M A T E R I A L S AND F I N I S H E S : BODY = BR A S S , T I N P L A T E D CONTACT - PHOSPHOR BRONZE, I N S U L A T OR = P OL YP R OP Y L E NE TH 1RD ANGLE REV NO. PROJ. D E S C R 1P T I O N A <§ > B T I N PLATED
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Philips 2222 021 17222
Abstract: 030 36109 philips 030 36229 Philips 021 LL capacitors Philips 2222 015 35689 capacitors Philips 031 aluminum electrolytic capacitors 2222 015 16229 38478 philips 031 18229 2222 042 PHILIPS
Text: Aluminum Electrolytic Capacitors Axial, Standard N . Vs, AS 030,031 j Axial Standard Miniature Axial Smallest Diameter U s efu l life S. Ñ A S M 021/ASD 117 S e rie s SN, NN, ASH 041,042,043 ASH-ELB 042,043 Axial Stan d a rd Axial Standard High Voltage Axial Standard High Voltage
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021/ASD
18x40
PA01-A
Philips 2222 021 17222
030 36109
philips 030 36229
Philips 021 LL capacitors
Philips 2222 015 35689 capacitors
Philips 031 aluminum electrolytic capacitors
2222 015 16229
38478
philips 031 18229
2222 042 PHILIPS
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Scans-048
Abstract: uebertrager aus dma he no Leipzig U e b e r s i c h t von g e b r a e u c h l ichvn englIschsprachlgen Abkuerzungen aus dar Unterhait rasistor
Text: SERVICE-M ITTEILUNGEN V E B IN O U 8 T R I EVER T R IE B R U N D F U N K U N O F E R N S E H E N i . \ AUSGABE: 1 , i r :> 1r a d i o - t e l e v i s i o n \ 1986 S e it « 6 - 8 1 - 1 2 A b k u e r z u n g s v e r z e l e h n I • E n g l i s c h <— > D e u t s c h
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III/18/379
Scans-048
uebertrager
aus dma he no
Leipzig
U e b e r s i c h t von g e b r a e u c h l ichvn englIschsprachlgen Abkuerzungen aus dar Unterhait
rasistor
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ba3920
Abstract: BA 3922 BA3928 BA3930 9702FS 9329l BA3922 ba 243 rf 4S584 LZ 99
Text: IUHDU I l ZLV ZLl 8dOS/8dia BdOS ° 4 - —V Wl 951 —V ¥ P09fr 8SM-dOS 8Sdia (P00e)«dl0->IS £. _ ± <, 0\/ 0z zv 9£ 9‘0 9‘0 (A) mmm* (A) i/ a m # 9 6* 96> 9 9 (AlBfcCf m (A) 9 001 8 x >18 OV 9 001 8 x >12 (VUi)&^ia (A) 3 ra & * (su)xbw 01 (V '0 # a » £
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P09fr
TI0L-dVS939Ha
093J8
3x29x15
2x29x15
32X29X15
6149LS
6161N
BA9700A/AF
9702FS
ba3920
BA 3922
BA3928
BA3930
9329l
BA3922
ba 243 rf
4S584
LZ 99
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Ba 33 bco
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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32/36-M
x16/18x8d)
/36-M
600MHz
Ba 33 bco
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Untitled
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 128/144-Mbit 256Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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128/144-Mbit
256Kx16/18x32s)
128/144-M
600MHz
DL0059-00
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NT56V1680A0T
Abstract: nt56v168
Text: Preliminary 16 MEG: x4 ,x8 SDRAM NT56V1680A0T NT56V1640A0T Data Sheet 8012-90010 First Revision, April 1998 Changes may be made without notice T Preliminary 16 MEG: x4 ,x8 SDRAM DESCRIPTION The NT56V1680A0T is a 2-bankxl,048,576-wordx8-bit synchronous dynamic RAM and the
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NT56V1680A0T
NT56V1640A0T
576-wordx8-bit
NT56V1640A0T
152-wordx4-bit
nt56v168
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D4580
Abstract: direct rdram rambus TI 45-600
Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 256/288-Mbit 512Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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256/288-Mbit
512Kx16/18x32s)
256/288-M
600MHz
DL0060-00
D4580
direct rdram rambus
TI 45-600
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M5M4V16S30DTP
Abstract: M5M4V16S40 M5M4V16s30
Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)
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6S20DTP-7
097152-W
1048576-WORD
M5M4V16S20DTP
152-word
M5M4V16S30DTP
576-word
M5M4V16S40DTP
288-word
16-bit.
M5M4V16S40
M5M4V16s30
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TC59RM716GB
Abstract: 9T20T
Text: TOSHIBA TEN TA TIVE T O S H IB A M O S DIGITAL IN T E G R A T E D C IR C U IT TC59RM716GB-8 SILIC O N M O N O LIT H IC Overview T he D irect R am bus D R A M D irect R D R A M ™ is a general-purpose high perform ance m em ory device suitable for use in a broad ra n g e of applications including com puter memory, graphics, video a n d any o th er applications
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TC59RM716GB-8
128-M
800-M
TEST77
TEST78
P-BGA54-1312-1
TC59RM716GB
9T20T
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM56 V16160 2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM DESCRIPTION The MSM56V16160 is a 2-bank x 524,288-word x 16-bit synchronous dynamic RAM, fabricated in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
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MSM56
V16160
288-Word
16-Bit
MSM56V16160
cycles/64
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Untitled
Abstract: No abstract text available
Text: P r e lim in a r y ^ GM72V28841 AT/ALT L G S e m i c o n € o » 5l t c i ^ 4,194,304 w o r d x 8 b i t x 4 b a n k SYNCHRONOUS DYNAMIC RAM Description The GM72V28841 AT/ALT is a synchronous dynamic random access memory comprised of 134,217,728 memory cells and logic
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GM72V28841
PC100
GM72V28841AT/ALT
GM72V28841AT/ALT
TTP-54D)
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Untitled
Abstract: No abstract text available
Text: CMOS SyncBiFIFO 2 5 6 x 1 8 x 2 and 5 1 2 x 1 8 x 2 p o w e r b id ire ctio n a l F irst-In. F irst-O u t F IF O m e m o rie s, w ith syn ch ro n o u s in te rfa ce fo r fa st read a n d w rite c ycle tim e s. T h e S y n c B iF IF O IM is a da ta b u ffe r th a t can sto re o r re trieve
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IDT72605
IDT72615
T72605/ID
T72615
68-pin
64-pin
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diode BA 159
Abstract: in4937
Text: BA 157.BA 159 Fast Silicon Rectifier Schnelle Silizium Gleichrichter Nominal current Nennstrom 1A Repetitive peak reverse voltage Periodische Spitzensperrspannung 400. 1000 V Plastic case Kunststoffgehäuse DO-41 Weight approx. Gewicht ca. —f6 O.E 0.4 g
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DO-41
UL94V-0
R0D1RS14
DGG174
diode BA 159
in4937
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nec aa8
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 1 1 6 5 0 f o r R e v .E 16 M-BIT SYNCHRONOUS GRAM 256K-WORD BY 32-BIT BY 2-BANK Description The /¿PD4811650 is a synchronous graphics memory SGRAM organized as 262,144 words x 32 bits x 2 banks
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256K-WORD
32-BIT
uPD4811650
100-pin
nec aa8
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N047
Abstract: No abstract text available
Text: MITSUBISHI LSIs O ’d ' X ' MH8S64BALD-6 r 536,870,912-BIT 8,388,6O8-WORD BY 64-BIT Synchronous DYNAMIC RAM s ? eC u - - PRELIMINARY Some of contents are subject to change without notice.
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MH8S64BALD-6
912-BIT
64-BIT
MH8S64BALD
64-bit
85pin
94pin
10pin
95pin
124pin
N047
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gm72v661641ct
Abstract: 72V661641 GM72V661641 GM72V66441 vero cells 72V661641C 12A13 gm72v661641c
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V661641C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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72V661641C
GM72V661641CT
GM72V661641CT
TTP-54D)
72V661641
GM72V661641
GM72V66441
vero cells
12A13
gm72v661641c
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Untitled
Abstract: No abstract text available
Text: KM416S1120D CMOS SDRAM 1Mx 16 SDRAM 512 K x 16bit X 2 Banks Synchronous DRAM LVTTL Revision 1.2 March 1999 Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.2 Mar. 1999 ELECTRONiCS KM416S1120D CMOS SDRAM Revision History
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KM416S1120D
16bit
KM416S1120D-Z
125MHz
KM416S1120D-7/8@
416S1120D-6
416S1120D-7
50-TSOP2-400F
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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PD488448,
JUPD488448
128M-bit
PD488488
144M-bit
14072EJ1V0D
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GM72V66441
Abstract: GM72V66841
Text: Preliminary VerO. 1 LG Semicon Co.,Ltd. Description The G M 72V66841C T is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logics including input and output circuits operating synchronously by refering to the positive edge of the externally provided clock.
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GM72V66841CT
72V66841C
GM72V66841CT
TTP-54D)
GM72V66441
GM72V66841
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs O ’d ' \ ' MH16S64PHB-6 r 1,073,741,824-BIT 16,777,216-WORD BY 64-BIT Synchronous DYNAMIC RAM s ? eC u - - PRELIMINARY Some of contents are subject to change without notice.
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MH16S64PHB-6
824-BIT
216-WORD
64-BIT
MH16S64PHB
64-bit
85pin
94pin
10pin
95pin
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