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    BA 2ND YEARS Search Results

    BA 2ND YEARS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AMC1203DUBR Texas Instruments 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 Visit Texas Instruments Buy
    AMC1203BDUBR Texas Instruments 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 Visit Texas Instruments Buy
    AMC1203BDW Texas Instruments 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 16-SOIC -40 to 105 Visit Texas Instruments Buy
    AMC1203BDWR Texas Instruments 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 16-SOIC -40 to 105 Visit Texas Instruments Buy
    AMC1203DUB Texas Instruments 1-Bit, 10MHz, 2nd-Order, Isolated Delta-Sigma Modulator 8-SOP -40 to 105 Visit Texas Instruments Buy

    BA 2ND YEARS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    marking BA

    Abstract: transistor mark BA ba 2nd year PG05BAUSM
    Text: SEMICONDUCTOR PG05BAUSM MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking BA 1 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA PG05BAUSM hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PG05BAUSM marking BA transistor mark BA ba 2nd year PG05BAUSM PDF

    ba 2nd years

    Abstract: transistor mark BA KRX101E marking BA
    Text: SEMICONDUCTOR KRX101E MARKING SPECIFICATION TESV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		KRX101E ba 2nd years transistor mark BA KRX101E marking BA PDF

    ba 2nd years

    Abstract: KRX101U b.a 1st year ba 2nd year ba 1st year
    Text: SEMICONDUCTOR KRX101U MARKING SPECIFICATION USV PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX101U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Dot ● Pin 1 Indexs


    Original     		KRX101U ba 2nd years KRX101U b.a 1st year ba 2nd year ba 1st year PDF

    ba 2nd years

    Abstract: KRX201E marking BA
    Text: SEMICONDUCTOR KRX201E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		KRX201E ba 2nd years KRX201E marking BA PDF

    transistor mark BA

    Abstract: KRX201U ba 2nd years
    Text: SEMICONDUCTOR KRX201U MARKING SPECIFICATION US6 PACKAGE 1. Marking method Laser Marking BA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark BA KRX201U hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index.


    Original     		KRX201U transistor mark BA KRX201U ba 2nd years PDF

    transistor mark BA

    Abstract: KTC9011S ktc90
    Text: SEMICONDUCTOR KTC9011S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 BAF 2 1 Item Marking Description Device Mark BA KTC9011S hFE Grade F F, G, H, I * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		KTC9011S OT-23 transistor mark BA KTC9011S ktc90 PDF

    ba 2nd years

    Abstract: ba 2nd year
    Text: Using the Financial Functions of the TI-83 or TI-83 Plus www.ti.com/calc/83 and www.ti.com/calc/83plus This guide is to help you quickly get started using the Time-Value-of-Money features of the TI-83 and TI-83 Plus. Additional features are covered in Chapter 14 of the User Guide available at


    Original     		TI-83 com/calc/83 com/calc/83plus ba 2nd years ba 2nd year PDF

    F222

    Abstract: No abstract text available
    Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)


    Original     		OneNAND128 KFG2816Q1M-DEB OneNAND128 KFG2816D1M-DEB KFG2816U1M-DIB 67FBGA /48TSOP1 F222 PDF

    SLC NAND endurance 100k years

    Abstract: 802AH
    Text: Preliminary OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)


    Original     		OneNAND128 KFG2816Q1M-DEB OneNAND128 KFG2816D1M-DEB KFG2816U1M-DIB 67FBGA /48TSOP1 SLC NAND endurance 100k years 802AH PDF

    63FBGA

    Abstract: KFG5616D1M-DEB KFG5616Q1M KFG5616Q1M-DEB KFG5616U1M-DIB 8017h
    Text: OneNAND256 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND256 Part No. VCC core & IO Temperature PKG KFG5616Q1M-DEB 1.8V(1.7V~1.95V) Extended 63FBGA(LF)/48TSOP1 KFG5616D1M-DEB 2.65V(2.4V~2.9V) Extended 63FBGA(LF)/48TSOP1 KFG5616U1M-DIB 3.3V(2.7V~3.6V)


    Original     		OneNAND256 KFG5616Q1M-DEB 63FBGA /48TSOP1 KFG5616D1M-DEB KFG5616U1M-DIB KFG5616D1M-DEB KFG5616Q1M KFG5616Q1M-DEB KFG5616U1M-DIB 8017h PDF

    nokia 1100 LCD

    Abstract: Nokia lcd 1100 circuit diagram of nokia 101
    Text: Preliminary MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND256 Part No. KFM5616Q1M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: January 26th, 2005 1 Preliminary MuxOneNAND256(KFM5616Q1M) FLASH MEMORY


    Original     		MuxOneNAND256 KFM5616Q1M) KFM5616Q1M 63FBGA 80x11 nokia 1100 LCD Nokia lcd 1100 circuit diagram of nokia 101 PDF

    F221h

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 F221h PDF

    Toggle DDR NAND flash

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 Toggle DDR NAND flash PDF

    OneNAND

    Abstract: SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h
    Text: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB6 3.3V(2.7V~3.6V) Industrial


    Original     		OneNAND256 KFG5616x1A-xxB6) KFG5616Q1A-DEB6 256Mb 67FBGA KFG5616Q1A-PEB6 48TSOP1 KFG5616U1A-DIB6 KFG5616U1A-PIB6 OneNAND SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h PDF

    Toggle DDR NAND flash

    Abstract: samsung toggle mode NAND
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.0 Date: May 17th, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Toggle DDR NAND flash samsung toggle mode NAND PDF

    Untitled

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.1 Date: Aug 11, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 PDF

    F24d

    Abstract: 63FBGA SAMSUNG 256Mb NAND Flash Qualification Reliability MUXOneNAND
    Text: MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product Part No. VCC(core & IO) PKG MuxOneNAND256 KFM5616Q1M 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: June 15th, 2005 1 MuxOneNAND256(KFM5616Q1M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		MuxOneNAND256 KFM5616Q1M) MuxOneNAND256 KFM5616Q1M 63FBGA 80x11 F24d SAMSUNG 256Mb NAND Flash Qualification Reliability MUXOneNAND PDF

    Samsung 2Gb 3V MLC Nand flash

    Abstract: KFM5616Q1A-DEB5
    Text: MuxOneNAND256 KFM5616Q1A-DEB5 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB5) 1.0 FLASH MEMORY


    Original     		MuxOneNAND256 KFM5616Q1A-DEB5) 256Mb KFM5616Q1A-DEB5 67FBGA 67-FBGA-7 Samsung 2Gb 3V MLC Nand flash KFM5616Q1A-DEB5 PDF

    tsop1748

    Abstract: onenand block map onenand Flash Memory SAMSUNG OneNAND
    Text: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816D1M-DEB 2.65V(2.4V~2.9V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V)


    Original     		OneNAND128 KFG2816Q1M-DEB 67FBGA /48TSOP1 KFG2816D1M-DEB KFG2816U1M-DIB tsop1748 onenand block map onenand Flash Memory SAMSUNG OneNAND PDF

    512MB NOR FLASH

    Abstract: "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH
    Text: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB5 3.3V(2.7V~3.6V) Industrial


    Original     		OneNAND512 KFG1216x2A-xxB5) KFG1216Q2A-DEB5 512Mb 63FBGA KFG1216Q2A-FEB5 63FBGA KFG1216U2A-DIB5 KFG1216U2A-FIB5 512MB NOR FLASH "bad block" smartmedia ecc oneNand samsung 2GB Nand flash Samsung Electronics. NAND flash memory code lock circuit flow chart KFG1216 mlc nand flash lsb msb NAND flash memory SAMSUNG NAND FLASH PDF

    samsung toggle mode NAND

    Abstract: Samsung MLC cq 724 g diode Samsung nand MLC mlc nand flash lsb msb Samsung Electronics. NAND flash memory toggle mode nand samsung "NAND Flash" samsung dual lcd samsung lcd monitor power supply circuit diagram
    Text: OneNAND128 FLASH MEMORY OneNAND SPECIFICATION Product OneNAND128 Part No. VCC core & IO Temperature PKG KFG2816Q1M-DEB 1.8V(1.7V~1.95V) Extended 67FBGA(LF)/48TSOP1 KFG2816U1M-DIB 3.3V(2.7V~3.6V) Industrial 67FBGA(LF)/48TSOP1 Version: Ver. 1.1 Date: Dec. 23, 2005


    Original     		OneNAND128 KFG2816Q1M-DEB 67FBGA /48TSOP1 KFG2816U1M-DIB 047MAX samsung toggle mode NAND Samsung MLC cq 724 g diode Samsung nand MLC mlc nand flash lsb msb Samsung Electronics. NAND flash memory toggle mode nand samsung "NAND Flash" samsung dual lcd samsung lcd monitor power supply circuit diagram PDF

    SAMSUNG 256Mb NAND Flash Qualification Report

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1M FLASH MEMORY MuxOneNAND SPECIFICATION Product MuxOneNAND256 Part No. KFM5616Q1M VCC(core & IO) PKG 1.8V(1.7V~1.95V) 63FBGA(LF) Version: Ver. 1.1 Date: June 15th, 2005 1 MuxOneNAND256(KFM5616Q1M) FLASH MEMORY INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,


    Original     		MuxOneNAND256 KFM5616Q1M) KFM5616Q1M 63FBGA 80x11 SAMSUNG 256Mb NAND Flash Qualification Report PDF

    KFG1216U2A-DIB6

    Abstract: mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand 63FBGA KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
    Text: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB6 3.3V(2.7V~3.6V) Industrial


    Original     		OneNAND512 KFG1216x2A-xxB6) KFG1216Q2A-DEB6 512Mb 63FBGA KFG1216Q2A-FEB6 63FBGA KFG1216U2A-DIB6 KFG1216U2A-FIB6 KFG1216U2A-DIB6 mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6 PDF

    KFM5616Q1A-DEB6

    Abstract: No abstract text available
    Text: MuxOneNAND256 KFM5616Q1A-DEB6 FLASH MEMORY MuxOneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 256Mb KFM5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) Version: Ver. 1.2 Date: Dec. 23, 2005 1 MuxOneNAND256(KFM5616Q1A-DEB6) 1.0 FLASH MEMORY


    Original     		MuxOneNAND256 KFM5616Q1A-DEB6) 256Mb KFM5616Q1A-DEB6 67FBGA 67-FBGA-7 KFM5616Q1A-DEB6 PDF