W9968CF
Abstract: No abstract text available
Text: W9968CF JPEG USB DUAL MODE CAMERA CHIP W9968CF JPEG USB Dual Mode Camera Chip Publication Release Date: May 1999 -1Revision A2 W9968CF Revision History Revision Issue Date Comments A1 April, 1998 Formal release. A2 May, 1999 Supports USB Spec. Rev. 1.1. Changed bcdUSB and bcdDevice
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W9968CF
0x0100
0x0110.
W9968CF
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128X96
Abstract: W99681CF
Text: W99681CF JPEG USB DUAL MODE CAMERA CHIP W99681CF JPEG USB Dual Mode Camera Chip -1- Publication Release Date: March 2000 Revision A1 W99681CF Revision History Revision A1 Issue Date March, 2000 Comments Formal release. Copyright by Winbond Electronics Corp., all rights reserved.
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W99681CF
128X96
W99681CF
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RDRAM Clock
Abstract: RR15
Text: Direct RDRAM 64/72-Mbit 256Kx16/18x16d SIEM EN S O I ADVANCE INFORMATION Overview n Uses R am bus Signaling Level (RSL) for up to 800MHz operation Preliminary Data The R am bus Direct RDRAM™ is a general p u rp o se high-perform ance m em ory device suitable for u se in a
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64/72-Mbit
256Kx16/18x16d)
800MHz
/72-Mbit
600MHz
RDRAM Clock
RR15
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W9967CF
Abstract: W9968CF MA10 MD10 MD11 jpeg encoder w9967
Text: W9968CF JPEG USB DUAL MODE CAMERA CHIP W9968CF JPEG USB Dual Mode Camera Chip -1- Publication Release Date: May 1999 Revision A2 W9968CF Revision History Revision Issue Date Comments A1 April, 1998 Formal release. A2 May, 1999 Supports USB Spec. Rev. 1.1. Changed bcdUSB and bcdDevice
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W9968CF
0x0100
0x0110.
W9967CF
W9968CF
MA10
MD10
MD11
jpeg encoder
w9967
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Diode KD 514
Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Text: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381
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1-e t77
Abstract: DB711
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 72 M-bit 256Kx18x16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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256Kx18x16d)
1-e t77
DB711
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Ba 33 bco
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS TM 32/36-M bit 256K x16/18x8d ADVANCE INFORMATION O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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32/36-M
x16/18x8d)
/36-M
600MHz
Ba 33 bco
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PDF
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MOV 270/20
Abstract: 2322 640 90007 NTC thermistor philips phct 203 VARISTOR 275 K20 cma 00124 BC 2222 037 71109 ic 40154 2322 661 91002 UAA 1006 34821
Text: Information Product guide 200 BCcomp Information World wide web New products and highlights Series index Ceramic capacitors Film capacitors Electrolytic capacitors Variable capacitors Linear resistors Non-linear resistors Switches and potentiometers 02/2003
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD488448, 488488 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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PD488448,
JUPD488448
128M-bit
PD488488
144M-bit
14072EJ1V0D
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3240B
Abstract: No abstract text available
Text: HM5241605C Series 131,072-word x 16-bit x 2-bank Synchronous Dynamic RAM HITACHI ADE-203-381B Z Rev. 2.0 Jan. 7, 1997 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5241605C is offered in 2 banks for improved performance.
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HM5241605C
072-word
16-bit
ADE-203-381B
Hz/57
44Rb203
3240B
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hyundai rdram
Abstract: REF05
Text: HYRDU64164 / HYRDU72184 Series 64/72Mbit Direct RDRAM • HYUNDAI Advanced Information O verview The Direct Rambus™ DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and
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HYRDU64164
HYRDU72184
64/72Mbit
600MHz
800MHz
Mar98
hyundai rdram
REF05
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PDF
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D4580
Abstract: direct rdram rambus TI 45-600
Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 256/288-Mbit 512Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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256/288-Mbit
512Kx16/18x32s)
256/288-M
600MHz
DL0060-00
D4580
direct rdram rambus
TI 45-600
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 72 M-bit 256Kx 18x 16d Direct Rambus DRAM Description The Direct Rambus DRAM (Direct RDRAM™) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where
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256Kx
PD488385
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Untitled
Abstract: No abstract text available
Text: KM416RD8AC D /KM418RD8AC(D) Preliminary Direct RDRAM 1 2 8 /1 4 4 M b it R D R A M 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAM™ Revision 1.0 July 1999 Rev. 1.0 Jul. 1999 Preliminary KM416RD8AC(D)/KM418RD8AC(D)_ Direct RDRAM™ Revision History
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KM416RD8AC
/KM418RD8AC
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DECC3220
Abstract: DEDD4100 SMC5.7 F3082 DBCA1470 LDEID Multilayer metallized paper
Text: Film Surface Mount Capacitors General Purpose, High Stability and AC Line EMI Suppression General Purpose, High Stability and AC Line EMI Suppression One world. One KEMET. Film Surface Mount Capacitors General Purpose, High Stability and AC Line EMI Suppression
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FC103
15bis
DECC3220
DEDD4100
SMC5.7
F3082
DBCA1470
LDEID
Multilayer metallized paper
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Untitled
Abstract: No abstract text available
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size • Independent Row, Column & Data Busses • 300MHz and 400MHz clock frequencies
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128Mb
300MHz
400MHz
IBM0712161
A-60F
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IDA45
Abstract: RDRAM Clock
Text: Direct RDRAM LG Semicon Co.,Ltd PRELIMINARY 64/72-Mbit 256Kx16/18x16d Overview The Rambus Direct RDRAM™ is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and
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64/72-Mbit
256Kx16/18x16d)
64/72-Mbit
600MHz
800MHz
DL0035-00
IDA45
RDRAM Clock
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Untitled
Abstract: No abstract text available
Text: Direct RDRAM RAMBUS ADVANCE INFORMATION TM 128/144-Mbit 256Kx16/18x32s O verview The R am bus Direct RDRAM is a general p u rp o se high-perform ance m em ory device suitable for use in a broad range of applications including com puter mem ory, graphics, video, an d any other application
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128/144-Mbit
256Kx16/18x32s)
128/144-M
600MHz
DL0059-00
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QT41T
Abstract: RDRAM Clock NEC RDRAM 36
Text: PRELIMINARY DATA SHEET NEC MOS INTEGRATED CIRCUIT 128/144 M-bit Direct Rambus DRAM Description The Direct Rambus DRAM Direct RDRAM™ is a general purpose high-performance memory device suitable for use in a broad range of applications including com puter memory, graphics, video, and any other application where
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JUPD488448
128M-bit
PD488488
144M-bit
P62FB-80-DQ1
14072EJ2V0D
PD488448,
PD488488FB]
QT41T
RDRAM Clock
NEC RDRAM 36
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DA30F
Abstract: TFR 600M
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses
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128Mb
300MHz
400MHz
DA30F
TFR 600M
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Untitled
Abstract: No abstract text available
Text: TOSHIBA T E N T A T IV E TC59RM716 8 MB/RB-8,-7,-6 T O S H IB A M O S D IG IT A L IN T E G R A T E D C IR C U IT S IL IC O N M O N O L IT H IC Overview The Direct Ram bus DRAM (Direct RDRAM™ ) is a general-purpose high performance memory device suitable
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TC59RM716
128/144-Mbit
600-MHz
800-MHz
a80AZ
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ibm rdram
Abstract: No abstract text available
Text: IB M 0 7 1 2 1 6 1 K U 1A 128Mb Direct RDRAM Datasheet Advance Features • Data Mask for Byte W rite Control • Pipelined Memory Accesses • 16 bit Data I/O Width • 2x16 Dependent Banks w / 1KByte Page Size - Up to 4 Simultaneous Transactions • Independent Row, Column & Data Busses
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128Mb
300MHz
400MHz
-60Fj
ibm rdram
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RJH 30 E3
Abstract: RDRAM Clock S5550 HYRDU64164 HYRDU72184 REF05
Text: » « r u H P f t i • HYRDU64164 / HYRDU72184 SERIES 64/72MBIT DIRECT RDRAMTM > Advanced Information Overview The Direct Rambus DRAM (Direct RDRAM™ is a general purpose high-perform ance m em ory device suitable fo r use in a broad range o f applications
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HYRDU64164
HYRDU72184
64/72MBIT
RJH 30 E3
RDRAM Clock
S5550
REF05
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Ba 33 bco
Abstract: No abstract text available
Text: NN5216 4 0 5 / NN5216805 series CMOS 16Mbit 2,097,152 words x 4 bits x 2 banks CMOS 16Mbit (1,048,576 words x 8 bits x 2 banks) Synchronous Dynam ic RAM _ .W Preliminary Specification DESCRIPTION This product is a CMOS Synchronous Dynamic Random Access Memory (SDRAM) organized as 2,097,152 words
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NN5216
NN5216805
16Mbit
NN5216405)
NN5216805)
0QQlb27
NN5216405/
Ba 33 bco
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