Untitled
Abstract: No abstract text available
Text: / T l i n f i A R LTC1558-3.3/LTC 1558-5 Backup Battery Controller with Programmable Output — TECHNOLOGY FCRTURCS DCSCRIPTIOn • Complete Battery Backup System in an S O -8,16-P in GN or SO Package ■ Generates Adjustable Backup Voltage from a Single 1.2V NiCd Button Cell
|
OCR Scan
|
LTC1558-3
100mW
LTC1435
LTC1479
LT1521
300mA,
OT-223
1558f
|
PDF
|
Mahr 40 ex
Abstract: ba qc transistor 1558G LR2D VB30E CD54-220 CD54-22
Text: r r \imL- LTC1558-3.3/LTC 1558-5 Backup Battery Controller with Programmable Output TECHNOLOGY FCRTURCS DCSCRIPTIOn • Complete Battery Backup System in an S O -8,16-P in GN or SO Package ■ Generates Adjustable Backup Voltage from a Single 1.2V NiCd Button Cell
|
OCR Scan
|
100mW
LTC1558-3
300mA,
OT-223
Mahr 40 ex
ba qc transistor
1558G
LR2D
VB30E
CD54-220
CD54-22
|
PDF
|
Saft, battery Ni-Cd
Abstract: ba qc transistor P-11AAH gb170 gb60 nicd VB10E TC1435 LTC1559CGN-5 LTC1559CS8-5
Text: LTC1559-3.3/LTC 1559-5 r r u n m TECHNOLOGY Backup Battery Controller with Fixed Output F€RTUR€S D C S C R IP TIO n • Complete Battery Backup System in an SO-8, 16-Pin GN or SO Package ■ Generates Fixed Backup Voltage 3.07V/4.63V from a Single 1.2V NiCd Button Cell
|
OCR Scan
|
LTC1559-3
LTC1559
Saft, battery Ni-Cd
ba qc transistor
P-11AAH
gb170
gb60 nicd
VB10E
TC1435
LTC1559CGN-5
LTC1559CS8-5
|
PDF
|
ATINY 12
Abstract: A1252 62128
Text: r r u rm TECHNOLOGY LTC690/LTC691 _ LTC694/LTC695 M icroprocessor Supervisory Circuits F€RTU R€S D C S C R IP T IO n • ■ ■ ■ The LTC690family provides complete powersupply moni toring and battery control functions for microprocessor
|
OCR Scan
|
SO-16
200ms,
MAX690
LTC690/LTC691
LTC694/LTC695
16-Lead
SOL16
ATINY 12
A1252
62128
|
PDF
|
GB60 saft
Abstract: M/gb60 nicd
Text: r r u n LTC1559-3.3/LTC 1559-5 m TECH N O LO G Y B a cku p Battery Controller with Fixed O utp ut F€RTUR€S DCSCRIPTIOn • Complete Battery Backup System in an SO-8, 16-Pin GN or SO Package ■ Generates Fixed Backup Voltage 3.07V/4.63V from a Single 1.2V NiCd Button Cell
|
OCR Scan
|
LTC1559-3
16-Pin
100mW
LTC1479
LTC1558
LTC1559
1559f
GB60 saft
M/gb60 nicd
|
PDF
|
The 8002 Amplifier IC
Abstract: 8002 amplifier M12j 8002 op amp C 4242 transistor 457V constant current source with 500mA n-channel mosfet triggering LT 8001 P LT1620
Text: [p[F3H[FaH[L[Il^iaH Electrical Specifications Subject to Change r r u v _ LTC1731 m TECHNOLOGY Lithium-Ion Linear Battery C harger C ontroller July 1999 F€fflTUR€S DCSCRIPTIOn • Complete Linear Charger Controller for 1- or 2-Cell Lithium-Ion Batteries
|
OCR Scan
|
LTC1731
LT1512
LTC1541
LT1620
LTC1729
The 8002 Amplifier IC
8002 amplifier
M12j
8002 op amp
C 4242 transistor
457V
constant current source with 500mA
n-channel mosfet triggering
LT 8001 P
|
PDF
|
2SD780
Abstract: 7802S
Text: NEC SILICON TRANSISTORS BECTRON DEVICE 2SD780,2SD780A AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR M IN I MOLD DESCRIPTION PACKAGE DIMENSIONS The 2S0780, 2SD780A are designed fo r use in small type equipments espe in m illim eters 2 .8 + 0 2
|
OCR Scan
|
2SD780
2SD780A
2S0780,
2SD780A
2SB736,
2SB736A
Diss50
--84M
7802S
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • b3E bSMTfls? o o m ^ M ä sas ■ m i t b M ITSUB ISH I BIPOLAR DIGITAL ICs M54502P niTSUBISHI DGTL LOGIC DUAL AND GATE W ITH DRIVE TRANSISTOR DESCRIPTION The M54502P is a semiconductor integrated circuit contain ing two TTL AND gates and two high current, high break
|
OCR Scan
|
M54502P
M54502P
600mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MITSUBISHI DISCRETE SC bSiHflST D015273 fll3 «tlITS blE T> MITSUBISHI RF POWER TRANSISTOR 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION O UTLINE DRAWING 2 S C 2 7 9 8 is a s ilic o n N P N e p itaxia l plan ar ty p e t ra n sisto r d e sign e d fo r R F b ro a d -b a n d p o w e r a m p lifie rs in U H F band.
|
OCR Scan
|
D015273
2SC2798
|
PDF
|
transistor k 316
Abstract: No abstract text available
Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2527DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated dam per diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors. Features improved
|
OCR Scan
|
BU2527DF
100-PJP025-c
transistor k 316
|
PDF
|
NEC PS2001B
Abstract: PS2001B ps2001
Text: SEC PHOTO BECTM M DEVICE COUPLER PS2001B PHOTO COUPLER INDUSTRIAL USE -NEPO C SERIES - DESCRIPTION The PS2001B is an optically coupled isolator containing a GaAs light emitting diode and an NPN silicon photo transistor. FEATURES PACKAGE DIMENSIONS • High isolation voltage
|
OCR Scan
|
PS2001B
PS2001B
NEC PS2001B
ps2001
|
PDF
|
1200 va ups circuit diagram
Abstract: transistor BA RW QM15
Text: i j I MITSUBISHI TRANSISTOR MODULES I j QM150DY-24K I % j HIGH POWER SWITCHING USE j S INSULATED TYPE j j j QM150DY-24K • • • • • lc Collector current. 150A Vcex Collector-emitter voltage. 1200V hFE DC current gain.75
|
OCR Scan
|
QM150DY-24K
E80276
E80271
1200 va ups circuit diagram
transistor BA RW
QM15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by BUT33/D SEMICONDUCTOR TECHNICAL DATA BUT33 D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 56 AMPERES NPN SILICON POWER DARLINGTON TRANSISTOR 600 VOLTS
|
OCR Scan
|
BUT33/D
BUT33
97A-05
O-204AE
|
PDF
|
transistor vn2222
Abstract: AC adapter GLT1505 11N4148
Text: /rim Final Electrical Specifications LT1505 TECHNOLOGY C o n s ta n t-C u rre n t/V o lta g e High E fficiency B attery C h a rg e r F e b ru a ry 1999 FCRTURCS • Simple Design to Charge NiCd, NiMH and Lithium Rechargeable Batteries— Charging Current Programmed by Resistors or DAC
|
OCR Scan
|
LT1505
transistor vn2222
AC adapter
GLT1505
11N4148
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS PH2369 NPN switching transistor 1999 Apr 27 Product specification Supersedes data of 1997 May 27 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN switching transistor PH2369 FEATURES PINNING • Low curren t max. 200 mA
|
OCR Scan
|
PH2369
115002/00/03/pp8
|
PDF
|
ICS844S
Abstract: vco 2GHz
Text: PRELIMINARY ICS844S012I CRYSTAL-TO-LVDS/LVCMOS FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS844S012I is an optimized PCIe, sRIO and ICS Gigabit Ethernet Frequency Synthesizer and a HiPerClockS member of HiperClocks™ family of high performance clock solutions from IDT. The ICS844S012I
|
Original
|
ICS844S012I
ICS844S012I
25MHz
33MHz
200MHz
100MHz
250MHz;
33MHz
ICS844S
vco 2GHz
|
PDF
|
Untitled
Abstract: No abstract text available
Text: /^ruum _ LT1510/LT1510-5 TECHNOLOGY C o n s ta n t-V o lta g e / C o n sta n t-C u rre n t Battery C h a rg e r FCRTURCS • Charges NiCd, NiMH and Lithium-Ion Batteries — Only One V10W Resistor Is Needed to Program Charging Current ■ High Efficiency Current Mode PWM with 1.5A
|
OCR Scan
|
LT1510/LT1510-5
500kHz
LT1376
LT1511
LT1512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ba MR f l ST 0017211 350 • MITSUBISHI RF POWER MODULE M57749 903-905MHZ, 12.5V, 7W, FM MOBILE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRAM PIN : Pin ®VCCi @VCC2 @VCC3 ®Po ®GND : RF INPUT : 1st. DC SUPPLY : 2nd. DC SUPPLY : 3rd. DC SUPPLY : RF OUTPUT
|
OCR Scan
|
M57749
903-905MHZ,
|
PDF
|
PCIe 4X
Abstract: QC200 osc xtal 25MHZ osc xtal 25MHZ function XTAL 25MHZ Datasheet MO-220
Text: PRELIMINARY ICS841S012I CRYSTAL-TO-0.7V DIFFERENTIAL HCSL/ LVCMOS FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS841S012I is an optimized PCIe, sRIO and ICS Gigabit Ethernet Frequency Synthesizer and a HiPerClockS member of HiperClock s™ family of high performance clock solutions from IDT. The ICS841S012I
|
Original
|
ICS841S012I
ICS841S012I
25MHz
33MHz
200MHz
100MHz
250MHz;
PCIe 4X
QC200
osc xtal 25MHZ
osc xtal 25MHZ function
XTAL 25MHZ Datasheet
MO-220
|
PDF
|
Untitled
Abstract: No abstract text available
Text: r r u n m m TECH N O LO G Y C o n s t a n t - C u r r e n t/ V o lt a g e H ig h E ffic ie n c y B a tte ry C h a r g e r FCRTURCS D C S C R IP T IO n • Simple Charging of Li-Ion, NiMH and NiCd Batteries ■ Very High Efficiency: Up to 97% ■ Precision 0.5% Charging Voltage Accuracy
|
OCR Scan
|
280kHz
28-Lead
LT1512
LT1513
LTC1759
LT1505
LT1769
1505T
|
PDF
|
ICS44s
Abstract: ICS844S012I-01 844S012BKI-01LFT ICS844S012BKI-01 MO-220 ics844s
Text: Crystal-to-LVDS/LVCMOS Frequency Synthesizer ICS844S012I-01 DATA SHEET General Description Features The ICS844S012I-01 is an optimized PCIe, sRIO and Gigabit Ethernet Frequency Synthesizer. The HiPerClockS ICS844S012I-01 uses a 25MHz parallel resonant crystal to generate 33.33MHz - 200MHz clock signals,
|
Original
|
ICS844S012I-01
ICS844S012I-01
25MHz
33MHz
200MHz
100MHz
250MHz;
33MHz
ICS44s
844S012BKI-01LFT
ICS844S012BKI-01
MO-220
ics844s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Crystal-to-LVDS/LVCMOS Frequency Synthesizer ICS844S012I DATA SHEET General Description Features The ICS844S012I is an optimized PCIe, sRIO and Gigabit Ethernet Frequency Synthesizer. The HiPerClockS ICS844S012I uses a 25MHz parallel resonant crystal to generate 33.33MHz - 200MHz clock signals,
|
Original
|
ICS844S012I
ICS844S012I
25MHz
33MHz
200MHz
100MHz
250MHz;
33MHz
|
PDF
|
ICS844S012AIL
Abstract: ICS844S012AKI ICS844S012I MO-220 ICS44s
Text: Crystal-to-LVDS/LVCMOS Frequency Synthesizer ICS844S012I DATA SHEET General Description Features The ICS844S012I is an optimized PCIe, sRIO and Gigabit Ethernet Frequency Synthesizer. The HiPerClockS ICS844S012I uses a 25MHz parallel resonant crystal to generate 33.33MHz - 200MHz clock signals,
|
Original
|
ICS844S012I
ICS844S012I
25MHz
33MHz
200MHz
100MHz
250MHz;
33MHz
ICS844S012AIL
ICS844S012AKI
MO-220
ICS44s
|
PDF
|
GE 4N35
Abstract: 4n35 optoisolator motorola 4n35 4N36 Control 4N35 4N35 VDE0160 VDE0832 VDE0833 C4N35
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4N 35 4N 36 4N 37 6-Pin D IP O ptoisolators Transistor Output These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • • • • •
|
OCR Scan
|
E54915
IEC380/VDE0806,
IEC435/VDE0805,
IEC65/VDE0860,
VDE0110b,
IEC204/VDE0113,
VDE0160,
VDE0832LSE
30A-02
GE 4N35
4n35 optoisolator
motorola 4n35
4N36
Control 4N35
4N35
VDE0160
VDE0832
VDE0833
C4N35
|
PDF
|
