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Murata Manufacturing Co Ltd BLM18BA121SN1D FERRITE BEAD 120 OHM 0603 1LN
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLM18BA121SN1D	Cut Tape	32,660		1	1 $0.1 10 $0.065 100 $0.0454 1000 $0.03085 10000 $0.03085	Buy Now
	BLM18BA121SN1D	Digi-Reel	32,660		1	1 $0.1 10 $0.065 100 $0.0454 1000 $0.03085 10000 $0.03085	Buy Now
	BLM18BA121SN1D	Reel	32,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.02078	Buy Now
Mouser Electronics	BLM18BA121SN1D		7,136			1 $0.1 10 $0.047 100 $0.035 1000 $0.028 10000 $0.019	Buy Now
Newark	BLM18BA121SN1D	Cut Tape	109		10	1 - 10 $0.053 100 $0.036 1000 $0.036 10000 $0.036	Buy Now
TTI	BLM18BA121SN1D	Reel	4,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.019	Buy Now
TME	BLM18BA121SN1D		800		1	1 $0.0932 10 $0.0236 100 $0.0188 1000 $0.0148 10000 $0.0117	Buy Now

Avnet Abacus	BLM18BA121SN1D			12 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
SiTime Corporation SIT8918BA-12-18S-23.000000 MEMS OSC XO 23.0000MHZ LVCMOS LV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIT8918BA-12-18S-23.000000		231		1	1 $3.59 10 $3.1 100 $2.6771 1000 $2.3146 10000 $2.18516	Buy Now
L-com Inc BA121 ADAPTOR F M /TNC M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BA121	Bag			1	1 $10.23 10 $10.23 100 $10.23 1000 $10.23 10000 $10.23	Buy Now
Verical	BA121		42		13	1 - 10 - 100 $6.2694 1000 $5.7591 10000 $5.7591	Buy Now
Newark	BA121	Bulk	22		1	1 $7.2 10 $7.2 100 $7.2 1000 $7.2 10000 $7.2	Buy Now
RS	BA121	Bulk		3 Weeks	1	1 $7.29 10 $7.29 100 $7.29 1000 $7.29 10000 $7.29	Get Quote
Onlinecomponents.com	BA121					1 - 10 $9.25 100 $7.18 1000 $6.39 10000 $6.17	Buy Now
Same Sky BA-1210 CONN F JACK STR 75 OHM PCB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BA-1210	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Murata Manufacturing Co Ltd BLM18BA121SZ1D FERRITE BEAD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLM18BA121SZ1D	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.02472	Buy Now
Mouser Electronics	BLM18BA121SZ1D					1 $0.1 10 $0.081 100 $0.047 1000 $0.026 10000 $0.021	Get Quote
TME	BLM18BA121SZ1D				4,000	1 - 10 - 100 - 1000 - 10000 $0.0201	Get Quote
Chip1Stop	BLM18BA121SZ1D	Cut Tape	2,900			1 - 10 - 100 $0.0212 1000 $0.0172 10000 $0.0171	Buy Now

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BA121 Datasheets (15)

Part	Manufacturer	Description	Datasheet Type	PDF
BA121	L-Com	ADAPTOR F M /TNC M	Original	PDF
BA121	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF
BA121	Unknown	Semiconductor Devices, Diode, and SCR Datasheet Catalog	Scan	PDF
BA121	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF
BA121	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BA121	Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF
BA121	Philips Components	Philips Data Book Scan	Scan	PDF
BA121	Telefunken Electronic	Electronic Component Data Book 1976	Scan	PDF
BA121	Telefunken Electronic	Diodes 1977	Scan	PDF
BA-1212D	Bothhand Enterprise	0.5 Watt Isolated DC-DC Converter	Original	PDF
BA-1212D01	Bothhand Enterprise	1 Watt Isolated DC-DC Converter	Original	PDF
BA-1212D1	Bothhand Enterprise	1 Watt Isolated DC-DC Converter	Original	PDF
BA-1212S	Bothhand Enterprise	Isolated DC-DC Converter Single Output	Original	PDF
BA-1212S1	Bothhand Enterprise	Isolated DC-DC Converter Single Output	Original	PDF

BA-1215D01	Bothhand Enterprise	1 Watt Isolated DC-DC Converter	Original	PDF

BA121 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SAMSUNG MCP Abstract: ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor Text: Preliminary MCP MEMORY KBB0xB400M Document Title Multi-Chip Package MEMORY 64M Bit 8M x8/4M x16 Dual Bank NOR Flash *2 / 256M Bit (16Mx16) NAND Flash / 64M Bit (4Mx16) UtRAM Revision History Revision No. History 0.0 Initial Draft (64M NOR Flash M-die_rev1.1)	Original	PDF	KBB0xB400M 16Mx16) 4Mx16) 80-Ball 80x12 SAMSUNG MCP ECH information KBB0xB400M BA102 ba4901 UtRAM Density BA5101 samsung NAND memory BGA180 ba30 transistor
Untitled Abstract: No abstract text available Text: K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit 8M x8/4M x16 Dual Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft January 10, 2002 Preliminary 1.0 Final Specification May 22, 2002 Final 1.1 Revised	Original	PDF	K8D6x16UTM K8D6x16UBM 48TSOP1 16M/16M 08MAX
BA-1212S1 Abstract: BA-0505S1 BA-0505S BA-0512S BA-0512S1 BA-053R3S BA-053R3S1 BA-1205S BA-1205S1 BA-1212S Text: BA - 0.5 to 1 Watt Isolated DC-DC Converter SIL Series Single Output 1. Features : n 4 Pin SIL Package n Low Ripple and Noise n Input / Output Isolation 1000 Vdc n 100 % Burn-In n Input Filter with Internal Capacitor n Custom Design Available 2. Absolute maximum ratings:	Original	PDF	BA-053R3S BA-0505S BA-0512S BA-1205S BA-1212S BA-2405S BA-053R3S1 BA-0505S1 BA-0512S1 BA-1205S1 BA-1212S1 BA-0505S1 BA-0505S BA-0512S BA-0512S1 BA-053R3S BA-053R3S1 BA-1205S BA-1205S1 BA-1212S
P-TFBGA63-0911-0 Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112 Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	PDF	TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	PDF	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96
BA102 Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for	Original	PDF	TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65
BA-0505D1 Abstract: ba-0505D1Lf BA 20 BA 50 900DDH BA-0505D BA-0505S BA-0512D BA-0512S BA-053R3D BA-053R3S Text: BA LF Series 0.5 to 1 Watt Isolated DC-DC Converter Single / Dual Output 1. Features λ λ λ λ λ λ λ λ 4 Pin SIL / 8 Pin DIL Package Low Ripple and Noise Input / Output Isolation ：1000 Vdc 100% Burn-In Input Filter with Internal Capacitor Custom Design Available	Original	PDF	Spec-061003 BA-0505D1 ba-0505D1Lf BA 20 BA 50 900DDH BA-0505D BA-0505S BA-0512D BA-0512S BA-053R3D BA-053R3S
K8P2815UQB Abstract: No abstract text available Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB
BA258 Abstract: ba146 BA148 ba198 BA204 Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204
samsung electronics ba41 Abstract: BA175 Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175
BA379 Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324 Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz	Original	PDF	K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
Untitled Abstract: No abstract text available Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed	Original	PDF	K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh
samsung ba92 Abstract: BA137 k8p3215 Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8P6415UQB 64-Ball 60Solder samsung ba92 BA137 k8p3215
diode ba102 Abstract: BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641 Text: TC58FVT641/B641FT-10 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	PDF	TC58FVT641/B641FT-10 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 diode ba102 BA102 BA127 BA127 Diode TC58FVB641FT BA43 B641

k2645 Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt	Original	PDF	MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
BA100 diode Abstract: BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106 Text: Advance Information MCP MEMORY K5C6481NT B M Document Title Multi-Chip Package MEMORY 64M Bit (4Mx16) Dual Bank NOR Flash Memory / 8M(512Kx16) Full CMOS SRAM Revision History Revision No. History 0.0 Advance Information Draft Date Remark Sep. 7, 2001 Advance	Original	PDF	K5C6481NT 4Mx16) 512Kx16) 512Kx10 81-Ball 80x11 BA100 diode BA102 ba107 Samsung MCP BA125 Diode diode ba102 BA134 BA100 BA106
06SEC Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
K8P6415UQB Abstract: K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64 Text: K8P6415UQB FLASH MEMORY 64Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,	Original	PDF	K8P6415UQB 047MAX 64-Ball 60Solder K8P6415UQB K8P2815 BA141 K8P6415U K8p3215 K8P6415 K8P32 k8p2815u K8P3215U K8P64
BB121 Abstract: No abstract text available Text: C31E6.pdf 01.5.29 This is the PDF file of catalog No.C31E-6 BLM18 Series 1608 Size 0.4±0.2 0.8±0.15 1 1.6±0.2 0.8±0.15 in mm Impedance (at 100MHz) (ohm) Rated Current (mA) DC Resistance(max.) (ohm) Operating Temperature Range (°C) BLM18AG121SN1 120 ±25%	Original	PDF	C31E-6 C31E6 BLM18 BLM18AG121SN1 BLM18AG151SN1 BLM18AG221SN1 BLM18AG331SN1 BLM18AG471SN1 BLM18AG601SN1 BLM18AG102SN1 BB121
TC58FVM7B5BTG65 Abstract: TC58FVM7t5BTG65 BK-10 HA145 Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as	Original	PDF	TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145
BA254 Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features	Original	PDF	TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
BA100 diode Abstract: BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode Text: KADxx0300B - Txxx MCP MEMORY Document Title Multi-Chip Package MEMORY 128M Bit Two Dual Bank 64M Bit NOR Flash Memory / 32M Bit (2Mx16) UtRAM Revision History Revision No. History Draft Date Remark August 9, 2002 Preliminary 0.0 Initial Draft 0.1 Revised (UtRAM)	Original	PDF	KADxx0300B 2Mx16) 69-Ball 10MAX BA100 diode BA115 BA116 BA961 SAMSUNG MCP ba841 ba7 transistor BA124 BA127 BA133 diode
Untitled Abstract: No abstract text available Text: BA LF Series 0.5 To 1 Watt Isolated DC-DC Converter Single / Dual Output 1. Features l l l l l l l l 4 Pin SIL / 8 Pin DIL Package Low Ripple And Noise Input / Output Isolation：1000 Vdc 100% Burn-In Input Filter With Internal Capacitor Custom Design Available	Original	PDF
BA142 Abstract: No abstract text available Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,	Original	PDF	K8Q2815UQB 128Mb 56TSOP) similar90000h-097FFFh 088000h-08FFFFh 080000h-087FFFh 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh BA142

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BA121 Search Results

BA121 Price and Stock

Murata Manufacturing Co Ltd BLM18BA121SN1D

SiTime Corporation SIT8918BA-12-18S-23.000000

L-com Inc BA121

Same Sky BA-1210

Murata Manufacturing Co Ltd BLM18BA121SZ1D

BA121 Datasheets (15)

BA121 Datasheets Context Search

SAMSUNG MCP

Untitled

BA-1212S1

P-TFBGA63-0911-0

BA102

BA102

BA-0505D1

K8P2815UQB

BA258

samsung electronics ba41

BA379

Untitled

samsung ba92

diode ba102

k2645

BA100 diode

06SEC

K8P6415UQB

BB121

TC58FVM7B5BTG65

BA254

BA100 diode

Untitled

BA142