NE6500278
Abstract: 10NEC 2410 nec
Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.
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NE6500278
NE6500278
NE6500278-E3
10NEC
2410 nec
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ GaAs MES FET NE6500278 2.0 W L-BAND, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6500278 is a power GaAs FET which provides high gain, high efficiency and high output power in L band and S band.
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NE6500278
NE6500278
NE6500278-E3
10535E)
IR30-00-3
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band
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NEZ3642-4D,
NEZ4450-4D,
NEZ5964ter
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C-Band Power GaAs FET
Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band
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L 0929
Abstract: s 0934 91564
Text: HSXAWAVS HWL34YRA L-Band Power GaAs FET Hexawave, Inc. Description Outline Dimensions The HWL34YRA is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. 1.625 0 .065 Features • Low Cost GaAs Power FET
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HWL34YRA
HWL34YRA
L 0929
s 0934
91564
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nec 2571 4 pin
Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.
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5964 fet
Abstract: No abstract text available
Text: HSXAWAVS HWL36YRF Hexawave, Inc. L-Band Power GaAs FET Description Outline Dimensions The HWL36YRF is a Power GaAs FET designed for various L-band & S-band applications. It is presently offered in low cost ceramic package. Features • Low Cost GaAs Po wer FET
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HWL36YRF
HWL36YRF
-17M93
Vds-10
5964 fet
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nec 2571
Abstract: nec 2571 4 pin NEC 1357 ez 946 k 3918 fet IMS 3630
Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION P A C K A G E D IM EN SIO N S unit: mm The N EZ Series of microwave power GaAs FE T s offer 0.5 +0.1 high output power, high gain and high efficiency at C-band
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sn 0716
Abstract: NEC D 587
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1
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NE6500496
NE6500496
sn 0716
NEC D 587
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The PACKAGE DIMENSIONS UNIT: mm NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal
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NES2527B-30
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HWL30YRA
Abstract: No abstract text available
Text: HWL30YRA L-Band GaAs Power FET Autumn 2002 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Typical 16.5 dB Gain • 5V to 10V Operation Description The HWL30YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
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HWL30YRA
HWL30YRA
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NES1417B30
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1417B-30 is power GaAs FET which provides high output power and high gain in the 1.4-1,7GHz band. Internal input
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NES1417B-30
NES1417B-30
NES1417B30
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NEC D 809 F
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES1821B-30 is power GaAs FET which provides high output power and high gain in the 1.8-2.1 GHz band. Internal input
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NES1821B-30
NES1821B-30
NEC D 809 F
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Untitled
Abstract: No abstract text available
Text: HWL27YRA L-Band GaAs Power FET Autumn 2002 V1 Features Outline Dimensions • Low Cost GaAs Power FET • Class A or Class AB Operation • Greater than 17 dB Gain • 5V to 10V Operation Description The HWL27YRA is a Medium Power GaAs FET designed for various L-band & S-band applications.
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HWL27YRA
HWL27YRA
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NE6500496
Abstract: 094-3 MAG
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1
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NE6500496
NE6500496
094-3 MAG
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NES2527B-30
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NES2527B-30 is power GaAs FET which 24±0.3 provides high output power and high gain in the 2.5 - 2.7 20.4 GHz band.
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NES2527B-30
NES2527B-30
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TMD1414-2
Abstract: TGM9398-25 8596-50
Text: Product Guide 2014 Microwave Semiconductors GaAs MMICs L and S-band Partially Matched Power GaAs FETs Pout vs. Frequency Map 80 49 48 60 TPM2828-60❋ TPM1919-60 40 46 44 ● Output Power vs. Frequency Map GaAs MMICs L and S-band Partially Matched Power GaAs FETs . 3
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TPM2828-60â
TPM1919-60
TPM2828-9â
TMD0708-2
TMD0608-4
TMD7185-2
TMD5872-2
TMD1925-3
TMD1013-1-431
TMD0507-2A
TMD1414-2
TGM9398-25
8596-50
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MGFC47B3538B
Abstract: MGFC47B
Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC47B3538B
MGFC47B3538B
37dBm
GF-60
MGFC47B
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Untitled
Abstract: No abstract text available
Text: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC42V7177
MGFC42V7177
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC45B3436B 3.4 – 3.6 GHz BAND / 30W DESCRIPTION The MGFC45B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC45B3436B
MGFC45B3436B
-45dBc
12ohm
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Untitled
Abstract: No abstract text available
Text: <C band Internally Matched Power GaAs FET> MGFC42V7177 7.1 - 7.7GHz BAND / 16W DESCRIPTION The MGFC42V7177 is an internally impedance-matched GaAs power FET especially designed for use in 7.1 – 7.7 GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC42V7177
MGFC42V7177
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MGFC47B3436
Abstract: MGFC47B
Text: < C band internally matched power GaAs FET > MGFC47B3436 3.4 – 3.6 GHz BAND / 50W DESCRIPTION The MGFC47B3436B is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic
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MGFC47B3436
MGFC47B3436B
37dBm
10ohm
MGFC47B3436
MGFC47B
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NEC 2561
Abstract: sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.
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NE6501077
NE6501077
NEC 2561
sn 1699
NEC 2561 E
2561 a nec
sn 0952
2561 nec
nec d 1590
NEC semiconductor 2561
NEC 1357
NEC 2561 h
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Untitled
Abstract: No abstract text available
Text: <C band Internally Matched Power GaAs FET> MGFC47B3538B 3.5 – 3.8GHz BAND / 50W DESCRIPTION The MGFC47B3538B is an internally impedance-matched GaAs power FET especially designed for use in 3.5 – 3.8 GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC47B3538B
MGFC47B3538B
37dBm
GF-60
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