IR5 20v
Abstract: BAW62 BAW62M LLBAW62
Text: SynSEMi 5YN5EMI SEMICONDUCTOR_ BAW62 BAW62M LLBAW62 - DO-35 Axial-leaded Package - DO-34 Axial-leaded Package - LL-34 Surface Mount Package Device Electrical Characteristics t a = 25°c unless otherwise noted.) BAW62 Device Electrical Characteristics
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BAW62
BAW62M
LLBAW62
LL-34
100mA
IR5 20v
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pm2222a
Abstract: SOD80C PHILIPS BCB47B 1N4148 SOD80C PMBTA64 PXTA14 BF960 FET BFW11 BF345C BC558B PHILIPS
Text: Philips Semiconductors Index Surface Mounted Semiconductors Alphanumeric index: types added to the range since the last issue of handbook SC10 1991 issue are shown in bold print. TYPE NUMBER PACKAGE NEAREST CONVENTIONAL TYPE(S) DEVICE TYPE PAGE COMPLEMENT
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BA582
OD123
BA482
BA682
BA683
BA483
BAL74
BAW62,
1N4148
pm2222a
SOD80C PHILIPS
BCB47B
1N4148 SOD80C
PMBTA64
PXTA14
BF960
FET BFW11
BF345C
BC558B PHILIPS
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Philips fr 153 30
Abstract: No abstract text available
Text: • bbS3T31 ODEMST? TOT « A P X N AUER PHILIPS/DISCRETE b7E ]> BAS56 J V SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists of two separate planar epitaxial ultra-high speed, high conductance diodes in one microminiature plastic envelope intended for surface mounting.
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bbS3T31
BAS56
BAS56
1Z73J12
BAW62
Philips fr 153 30
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1N4148 LL34
Abstract: DH333 d1703 MBD914
Text: Discrete Power and Signal Technologies Fairchild S em iconductor Selection Guides Single Junction Diodes Single Junction Diodes Surface Mount SOT-23 & LL34 Part Number Remarks RRM VF m (V ) M MBD1701/ A S in g le M ax so M M B D 1703/A S e rie s 50 M MBD1704/A
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OT-23
MBD1701/
1703/A
MBD1704/A
MBD1705/A
MMBD2837
BAV74
BAV70
BAV99
FDLL4150
1N4148 LL34
DH333
d1703
MBD914
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Untitled
Abstract: No abstract text available
Text: BAS56 _ y \ _ SILICON PLANAR EPITAXIAL ULTRA-HIGH SPEED DIODE The BAS56 consists o f tw o separate planar epitaxial ultra-high speed, high conductance diodes in one m icrominiature plastic envelope intended fo r surface mounting.
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BAS56
BAS56
BAW62
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Untitled
Abstract: No abstract text available
Text: • bbSBSBl 0054276 T57 H A P X N AUER PHILIPS/DISCRETE BAS28 b7E D J V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists of two separate diodes in one microminiature envelope intended for surface mounting. It concerns fast-switching general-purpose diodes.
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BAS28
BAS28
BAW62;
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Untitled
Abstract: No abstract text available
Text: BAS28 y V SILICON PLANAR EPITAXIAL HIGH-SPEED DIODE The BAS28 consists o f tw o separate diodes in one m icrominiature envelope intended fo r surface mounting. It concerns fast-switching general-purpose diodes. Q UICK REFERENCE D A T A VR max. 75 V Repetitive peak reverse voltage
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BAS28
BAS28
BAW62;
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ic TDA7021T
Abstract: TDA7050T BAW62 MS-012AA TDA7021T TDA7040T
Text: INTEGRATED CIRCUITS DATA SHEET TDA7040T Low voltage PLL stereo decoder Product specification File under Integrated Circuits, IC01 September 1986 Philips Semiconductors Product specification Low voltage PLL stereo decoder TDA7040T GENERAL DESCRIPTION The TDA7040T is a monolithic integrated circuit for low cost FM stereo radios with an absolute minimum of peripheral
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TDA7040T
TDA7040T
ic TDA7021T
TDA7050T
BAW62
MS-012AA
TDA7021T
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Text: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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BAS32,
BAS45,
BAV105
LL4148,
LL4448
BB241
BB249
LL914
LL4150,
MMBD2104
Transistor NEC 05F
hp2835 diode
ZENER DIODE t2d
what is the equivalent of ZTX 458 transistor
MMBD2103
T2D DIODE 3w
T2D 8N
2n2222 as equivalent for bfr96
mmbf4932
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BAS 20 SOT23
Abstract: BAW62 SOT23 1s920 3BT SOT-23 1n4376 MMBD1201 BAY71 1N916 1S921 FDLL4148
Text: Vrrm Volts Min 100 80 75 VFM @IF rr (ns) Package* (nA) (Volts) (mA) Max Max Max Ir r m Device 10 4.0 1.0 30 4.0 1.2 200 bsoiiao Düaqsoa 3t.T V RRM (Volts) Min 75 DO-35 Device ilf b fiL D . Silicon Single Junction Diodes (continued) mnscs Vm @lF 1* (ns) Package*
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1N916
DO-35
1N916B
1S921
FDLL4148
LL-34*
FDLL4448
BAS 20 SOT23
BAW62 SOT23
1s920
3BT SOT-23
1n4376
MMBD1201
BAY71
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1N4148 SMD PACKAGE
Abstract: BAW62 SMD philips 1n4148 SMD 1N4148 SMD sot23 PACKAGE BAV21 SOT143B BAS21H diode 1N4148 SMD 1PS184 BAW62 SOT23 1PS226
Text: Semiconductors Date of release: September 2004 Switching diodes portfolio trr max. [ns] VR max. [V] General purpose switching diodes: double, triple and quad diodes Package Size in mm Ptot [mW] SOT346 SC-59 Plastic SMD SOT457 (SC-74) Plastic SMD SOT23 SOT143B
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OT346
SC-59)
OT457
SC-74)
OT143B
OT323
SC-70)
OT363
SC-88)
OT666
1N4148 SMD PACKAGE
BAW62 SMD
philips 1n4148 SMD
1N4148 SMD sot23 PACKAGE
BAV21 SOT143B
BAS21H
diode 1N4148 SMD
1PS184
BAW62 SOT23
1PS226
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TDA7021T
Abstract: TDA7040 BAW62 MS-012AA TDA7040T TDA7050T
Text: 34 .80 7IRELESS IMPORTANT NOTICE Dear customer, As from August 2nd 2008, the wireless operations of NXP have moved to a new company, ST-NXP Wireless. As a result, the following changes are applicable to the attached document. ● Company name - Philips Semiconductors is replaced with ST-NXP Wireless.
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NF-2000
Abstract: BAW62 BSH112 PIP250M HVQFN68
Text: PIP250M Integrated buck converter An innovative solution for Point of Load POL regulators Philips new PIP250M single-phase DC/DC synchronous buck converter integrates five component functionalities in a single package.This innovative multi-chip module provides
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PIP250M
NF-2000
BAW62
BSH112
HVQFN68
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marking code qa surface mount diode
Abstract: theremin
Text: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IF 200 mA IFM(surge) 500 mA Rating Peak Forward Surge Current Pulse Width = 10 ms
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BAS16DXV6T1,
BAS16DXV6T5
OT-563
marking code qa surface mount diode
theremin
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BAS16DXV6T1
Abstract: BAS16DXV6T5 BAW62
Text: BAS16DXV6T1, BAS16DXV6T5 Preferred Device Dual Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500 mA
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BAS16DXV6T1,
BAS16DXV6T5
OT-563
BAS16DXV6T1/D
BAS16DXV6T1
BAS16DXV6T5
BAW62
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tda1023 applications
Abstract: TRIAC bt139 heater temperature control TDA1023 philips thermistor 2322 642 proportional controlling heater with triac TRIAC heater temperature control Triac stabilizer application note TDA1023T power triac circuit handbook triac burst control ic
Text: INTEGRATED CIRCUITS DATA SHEET TDA1023/T Proportional-control triac triggering circuit Product specification Supersedes data of August 1982 File under Integrated Circuits, IC02 May 1991 Philips Semiconductors Product specification Proportional-control triac triggering circuit
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TDA1023/T
TDA1023
tda1023 applications
TRIAC bt139 heater temperature control
philips thermistor 2322 642
proportional controlling heater with triac
TRIAC heater temperature control
Triac stabilizer application note
TDA1023T
power triac circuit handbook
triac burst control ic
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Silicon Switching Diode BAS16WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current IR 200 mA IFM(surge) 500 mA PD 200 mW 1.6 mW/°C TJ, Tstg
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BAS16WT1
70/SOT
r14525
BAS16WT1/D
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BAS16WT1
Abstract: BAW62 SMD310 baw62 surface mount
Text: MOTOROLA Order this document by BAS16WT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Switching Diode BAS16WT1 Motorola Preferred Device 3 CATHODE 1 ANODE 3 MAXIMUM RATINGS TA = 25°C 1 Symbol Max Unit Continuous Reverse Voltage VR 75 V Recurrent Peak Forward Current
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BAS16WT1/D
BAS16WT1
70/SOT
BAS16WT1
BAW62
SMD310
baw62 surface mount
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BAS16TT1
Abstract: BAW62 SMD310 baw62 surface mount 555 CIRCUIT WITH FOOTPRINT
Text: BAS16TT1 Preferred Device Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF
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BAS16TT1
r14525
BAS16TT1/D
BAS16TT1
BAW62
SMD310
baw62 surface mount
555 CIRCUIT WITH FOOTPRINT
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BAW62
Abstract: DA121TT1 SMD310
Text: DA121TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms http://onsemi.com Symbol Max Unit VR 80 V IF 200 mA IFM(surge) 500
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DA121TT1
r14525
DA121TT1/D
BAW62
DA121TT1
SMD310
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TDA1023
Abstract: TRIAC bt139 heater temperature control tda1023 applications TRIAC heater temperature control philips thermistor 2322 642 Triac stabilizer application note triac firing pulse generating circuit controlling heater with triac proportional controlling heater with triac triac triggering ic
Text: INTEGRATED CIRCUITS DATA SHEET TDA1023/T Proportional-control triac triggering circuit Product specification Supersedes data of August 1982 File under Integrated Circuits, IC02 May 1991 Philips Semiconductors Product specification Proportional-control triac triggering circuit
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TDA1023/T
TDA1023
TRIAC bt139 heater temperature control
tda1023 applications
TRIAC heater temperature control
philips thermistor 2322 642
Triac stabilizer application note
triac firing pulse generating circuit
controlling heater with triac
proportional controlling heater with triac
triac triggering ic
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BAS16TT1
Abstract: BAW62 SMD310 baw62 surface mount
Text: BAS16TT1 Preferred Device Silicon Switching Diode MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms http://onsemi.com Symbol Max Unit VR 75 V IF 200 mA IFM(surge) 500
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BAS16TT1
r14525
BAS16TT1/D
BAS16TT1
BAW62
SMD310
baw62 surface mount
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BAS16TT1
Abstract: BAW62 SMD310
Text: BAS16TT1 Preferred Device Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 75 V IF
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BAS16TT1
416/SC
r14525
BAS16TT1/D
BAS16TT1
BAW62
SMD310
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555 CIRCUIT WITH FOOTPRINT
Abstract: BAW62 DA121TT1 SMD310
Text: DA121TT1 Preferred Device Advance Information Silicon Switching Diode http://onsemi.com MAXIMUM RATINGS TA = 25°C Rating Continuous Reverse Voltage Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width = 10 ms Symbol Max Unit VR 80 V IF
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DA121TT1
r14525
DA121TT1/D
555 CIRCUIT WITH FOOTPRINT
BAW62
DA121TT1
SMD310
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