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    onsemi BAX16

    DIODE GEN PURP 150V 200MA DO35
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    DigiKey BAX16 Bulk 8,452 1
    • 1 $0.26
    • 10 $0.158
    • 100 $0.26
    • 1000 $0.06366
    • 10000 $0.044
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    Avnet Americas BAX16 Bulk 0 Weeks, 2 Days 25,000
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    BAX16 Bulk 10 Weeks 25,000
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    Mouser Electronics BAX16 65,313
    • 1 $0.18
    • 10 $0.112
    • 100 $0.051
    • 1000 $0.035
    • 10000 $0.031
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    Arrow Electronics BAX16 16 98 Weeks 1
    • 1 $0.1013
    • 10 $0.063
    • 100 $0.0281
    • 1000 $0.0215
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    Onlinecomponents.com BAX16
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    Rochester Electronics BAX16 78,000 1
    • 1 $0.0333
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    • 100 $0.0313
    • 1000 $0.0283
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    Avnet Silica BAX16 11 Weeks 5,000
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    Flip Electronics BAX16 90,000
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    Sensata Technologies P1J-5MB-AX16PA

    SENSOR 0.07PSID 0.08" 14BIT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P1J-5MB-AX16PA Tray 113 1
    • 1 $36.61
    • 10 $36.61
    • 100 $36.61
    • 1000 $36.61
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    Rochester Electronics LLC BAX16

    RECTIFIER DIODE, 0.2A, 150V, DO-
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAX16 Bulk 8,663
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    onsemi BAX16TR

    DIODE GEN PURP 150V 200MA DO35
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BAX16TR Reel 10,000
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    Avnet Americas BAX16TR Reel 10 Weeks 30,000
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    Mouser Electronics BAX16TR 14,284
    • 1 $0.17
    • 10 $0.11
    • 100 $0.06
    • 1000 $0.049
    • 10000 $0.039
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    Verical BAX16TR 80,000 10,601
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    BAX16TR 30,000 10,601
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    BAX16TR 20,000 10,601
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    BAX16TR 4,569 379
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    Arrow Electronics BAX16TR 4,569 1
    • 1 $0.0431
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    • 1000 $0.0431
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    Onlinecomponents.com BAX16TR
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    Rochester Electronics BAX16TR 130,000 1
    • 1 $0.0333
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    • 100 $0.0313
    • 1000 $0.0283
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    Chip1Stop BAX16TR Cut Tape 8,400
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    EBV Elektronik BAX16TR 12 Weeks 10,000
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    Flip Electronics BAX16TR 20,000
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    Central Semiconductor Corp BAX12-TR

    DIODE AVALANCHE 90V 400MA DO35
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    DigiKey BAX12-TR Reel
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    BAX1 Datasheets (156)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BAX11 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BAX11 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAX11/IIIo Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BAX11/IIIu Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BAX11/IIo Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BAX11/IIu Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BAX11/Io Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BAX11/Iu Telefunken Electronic Electronic Component Data Book 1976 Scan PDF
    BAX12 EIC Semiconductor Avalanche Fast Recovery Rectifier Diodes Original PDF
    BAX12 Philips Semiconductors Controlled avalanche diode Original PDF
    BAX12 Philips Semiconductors Controlled Avalanche Diode Original PDF
    BAX12 Mullard Quick Reference Guide 1977/78 Scan PDF
    BAX12 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BAX12 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BAX12 Unknown Cross Reference Datasheet Scan PDF
    BAX12 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BAX12 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BAX12 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BAX12 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BAX12 Unknown Shortform Electronic Component Datasheets Short Form PDF
    ...

    BAX1 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    CS9013

    Abstract: CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac
    Text: Discrete POWER & Signal Technologies Pro Electron Diode Series Leaded Switching Diodes Device No. Vrrm I rrm V Min (nA) Min BAV19 BAV20 BAV21 BAV102 BAV103 100 150 200 150 200 100 100 100 100 100 BAW62 BAW76 BAX13 BAX16 BAY19 75 50 50 150 100 BAY71 BAY72


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    BAV19 BAV20 BAV21 BAV102 BAV103 BAW62 BAW76 BAX13 BAX16 BAY19 CS9013 CS9011 CS9012 BC327 SOT 23-6 CS8050 BC547 CS9018 BF494 to-92 .y1 do-213ac PDF

    BAX14

    Abstract: MAM246 GENERAL PURPOSE DIODE
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass


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    M3D176 BAX14 DO-35) BAX14 MAM246 MAM246 GENERAL PURPOSE DIODE PDF

    BAX12A

    Abstract: BAX12 equivalent BAX12
    Text: Certificate TH97/10561QM BAX12, BAX12A Certificate TW00/17276EM CONTROLLED AVALANCHE DIODES M1A FEATURES : * Switching speed: max. 50 ns * Continuous reverse voltage: max. 90V * Repetitive peak reverse voltage: max. 90V * Repetitive peak forward current: max.800 mA


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    TH97/10561QM BAX12, BAX12A TW00/17276EM 600mA UL94V-O MIL-STD-202, BAX12A BAX12 equivalent BAX12 PDF

    BAX12

    Abstract: BAX12 equivalent DO35 MAM246 Controlled avalanche diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass


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    M3D176 BAX12 DO-35) BAX12 BAX12 equivalent DO35 MAM246 Controlled avalanche diode PDF

    BAX18

    Abstract: No abstract text available
    Text: TH97/2478 www.eicsemi.com BAX18 IATF 0113686 SGS TH07/1033 TH09/2479 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 75 V


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    TH97/2478 BAX18 TH07/1033 TH09/2479 DO-204AH) DO-35 BAX18 PDF

    BAX12A

    Abstract: BAX12 equivalent G1.L BAX12 DO35 MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12; BAX12A Controlled avalanche diodes Product specification Supersedes data of 1996 Sep 17 2002 Apr 08 Philips Semiconductors Product specification Controlled avalanche diodes BAX12; BAX12A FEATURES DESCRIPTION


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    M3D176 BAX12; BAX12A DO-35) BAX12 BAX12A SCA74 BAX12 equivalent G1.L DO35 MAM246 PDF

    BAX12 equivalent

    Abstract: BAX12 DO35 MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1992 File under Discrete Semiconductors, SC01 1996 Apr 23 Philips Semiconductors Product specification Controlled avalanche diode BAX12


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    M3D176 BAX12 DO-35) BAX12 BAX12 equivalent DO35 MAM246 PDF

    BAX16

    Abstract: GENERAL PURPOSE DIODE BAX16 Diode BAx16
    Text: BAX16 High Voltage General Purpose Diode DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current


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    BAX16 DO-35 BAX16 GENERAL PURPOSE DIODE BAX16 Diode BAx16 PDF

    BAX16

    Abstract: general purpose diode GENERAL PURPOSE DIODE BAX16 FAIRCHILD DIODE
    Text: BAX16 High Voltage General Purpose Diode DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Symbol V RRM * T a = 25°C unless otherwise noted Parameter Value Unit 150 V Maximum Repetitive Reverse Voltage IF AV Average Rectified Forward Current


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    BAX16 DO-35 BAX16 general purpose diode GENERAL PURPOSE DIODE BAX16 FAIRCHILD DIODE PDF

    BAX14

    Abstract: DO-204AH
    Text: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free


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    BAX14 DO-204AH) DO-35 BAX14 DO-204AH PDF

    BAX16

    Abstract: No abstract text available
    Text: BAX16 High Voltage General Purpose Diode DO-35 Glass case COLOR BAND DENOTES CATHODE Absolute Maximum Ratings Symbol * Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 150 V IF AV Average Rectified Forward Current


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    BAX16 DO-35 BAX16 PDF

    BAX14

    Abstract: MAM246
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX14 General purpose diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification General purpose diode BAX14 FEATURES


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    M3D176 BAX14 DO-35) BAX14 MAM246 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAX14 SWITCHING DIODE DO - 35 Glass DO-204AH FEATURES : • Switching speed: max. 50 ns • General application • Continuous reverse voltage: max. 20 V • Repetitive peak reverse voltage: max. 40 V • Repetitive peak forward current: max. 2 A. • Pb / RoHS Free


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    BAX14 DO-204AH) DO-35 PDF

    BAX12

    Abstract: DO35 MAM246 Controlled avalanche diode
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D176 BAX12 Controlled avalanche diode Product specification Supersedes data of April 1996 File under Discrete Semiconductors, SC01 1996 Sep 17 Philips Semiconductors Product specification Controlled avalanche diode BAX12


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    M3D176 BAX12 DO-35) BAX12 DO35 MAM246 Controlled avalanche diode PDF

    BAX13

    Abstract: 34696 27293 100-C 5005I
    Text: FAIRCHILD SEMICONDUCTOR fl4 DiF| 3 4 ^ 7 4 84D 27293 3 469674 F A I R C H I L D S E M I C O N D U C T O R A S chlum berger C om pany : BAX13 FA IRCHILD 00572^3 7 r: D ot" High Speed Switching Diode ' PACKAGE BAX13 • C . . . 3 . 0 p F MAX • trr • .4.0 n t (MAX)


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    DMA10 BAX13 DO-35 33mW/Â 100-C 34696 27293 100-C 5005I PDF

    Untitled

    Abstract: No abstract text available
    Text: • ^ 5 3 1 3 1 0Q2b3bQ 582 H A P X N AMER PHILIPS/DISCRETE BAX12 b*lE » _y \ _ SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable of absorbing transients repetitively. It is a fast,


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    BAX12 DO-35 PDF

    7z66b

    Abstract: BAX18 diode td3 general purpose diode
    Text: b'iE D N AMER PHILIPS/DISCRETE • tbSa'lBl □□2b372 2 m IAPX BAX18 GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope prim arily intended fo r rectifier applications Q UICK REFERENCE D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage


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    2b372 BAX18 DO-35 OD-27 DO-35) 7z66b63 bb53131 0D2b37? 7z66b BAX18 diode td3 general purpose diode PDF

    BAX14

    Abstract: general purpose diode
    Text: Philips Semiconductors Product specification General purpose diode BAX14 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX14 is a general purpose switching diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27


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    BAX14 BAX14 DO-35) 010flb31 general purpose diode PDF

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE bbSB'iai DD2b372 2T4 BAX18 l b'BE D IAPX GENERAL PURPOSE DIODE General purpose diode in a DO-35 in envelope primarily intended for rectifier applications Q U IC K R E F E R E N C E D A T A V RRM max. 75 V Average forward current Repetitive peak reverse voltage


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    DD2b372 BAX18 DO-35 DO-35) 00Sb375 PDF

    BAX14

    Abstract: No abstract text available
    Text: • bb53T31 Ü02b3t.b TTÜ * A P X BAX14 N AMER PHILIPS/DISCRETE b'IE D G E N E R A L PU RPO SE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica­ tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.


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    02b3t BAX14 DO-35 OD-27 DO-35) 7Z88172 BAX14 PDF

    BAX12

    Abstract: No abstract text available
    Text: • bb53^31 0D2b3b0 562 « A P X N AMER P H I L I P S / D I S C R E T E b'iE BAX12 T> SILICON PLANAR EPITAXIAL CONTROLLED-AVALANCHE DIODE A planar epitaxial diode in a DO-35 envelope, capable o f absorbing transients repetitively. It is a fast, controlled avalanche diode, intended for switching inductive loads e.g. in semi-electronic telephone


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    BAX12 DO-35 bbS3T31 BAX12 PDF

    Untitled

    Abstract: No abstract text available
    Text: • bbS3T31 Q02b3bb TTD * A P X N AUER PHILIPS/MSCRETE BAX14 b^E ]> GENERAL PURPOSE DIODE General purpose diode in a DO-35 envelope intended for low-voltage switching and rectifier applica­ tions, but owing to its steep forward voltage curve also suitable for low-voltage stabilizing.


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    bbS3T31 Q02b3bb BAX14 DO-35 OD-27 DO-35) PDF

    BAX12

    Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
    Text: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)


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    BAX12 BAX12 BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes PDF

    BAX12

    Abstract: D035
    Text: Philips Semiconductors Product specification Controlled avalanche diode BAX12 FEATURES DESCRIPTION • Hermetically sealed leaded glass SOD27 DO-35 package The BAX12 is a controlled avalanche diode fabricated in planar technology, and encapsulated in the hermetically sealed leaded glass SOD27 (DO-35)


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    BAX12 DO-35) 7110fl2b 010flbE5 BAX12 D035 PDF