Untitled
Abstract: No abstract text available
Text: bb53T31 o o i n n DEVELOPMENT DATA 6TV160V SERIES This data sheet contains advance information and specifications ere subject to change without notice. ObE D N AMER PHILIPS/DISCRETE FAST GATE TURN-OFF THRYRISTORS Thyristors in IS O T O P envelopes with electrically isolated metal baseplates capable of being turned
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bb53T31
6TV160V
100QR
1200R
BTV160V
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PHILIPS BYX50-200
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE TDD D bb53T31 0010520 T BYX50 SERIES T - 0 3 -/ 7 FAST SOFT-RECOVERY RECTIFIER DIODES Silicon diodes in DO-4 metal envelopes, intended fo r use in high-frequency power supplies, thyristor inverters and multi-phase power rectifier applications. The series consists o f the follow ing types:
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bb53T31
BYX50
BYX50â
bbS3T31
0010S5S
tt53T31
PHILIPS BYX50-200
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Untitled
Abstract: No abstract text available
Text: bb53T31 0055064 36b « A P X P hilips Sem iconductors N AUER PHILIPS/DISCRETE NPN 8 GHz wideband transistor FEATURES PINNING BFQ67W PIN CONFIGURATION • High power gain • Low noise figure • High transition frequency 1 • Gold metallization ensures excellent reliability
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bb53T31
BFQ67W
OT323
UBC870
OT323.
OT323
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Untitled
Abstract: No abstract text available
Text: APX bb53T31 □□23737 b37 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistors BSN304; BSN304A N AUER PH IL IPS /DISCR ETE b7E D FEATURES QUICK REFERENCE DATA • Direct interface to C-MOS, TTL, etc. SYMBOL • High-speed switching
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bb53T31
BSN304;
BSN304A
Lb53131
bbS3T31
QD237T3
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • bb53T31 0D2BEB7 b23 I IAPX L BU705F BU705DF SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed switching npn power transistors in a SOT199 envelope intended fo r use in horizontal deflection circuits o f television receivers. The BU705DF has an integrated efficiency diode.
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bb53T31
BU705F
BU705DF
OT199
BU705DF
BU705DF)
7Z62340
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sd 431 transistor
Abstract: No abstract text available
Text: N ANER PHILIPS/DISCRETE bRE D • bb53T31 0D3DSSS 431 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic full-pack envelope, he device is intended for use in
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bb53T31
PINNING-SOT186
BUK445-100A/B
BUK445
-100A
-100B
K445-100A/B
IE-02
1E-03
1E-04
sd 431 transistor
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BYD14
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE bb53T31 002bS52 27fl • APX BYD14 SERIES b^E D L M AINTENANC E TYPE CONTROLLED AVALANCHE RECTIFIER DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes and intended fo r general purpose rectifier applications.
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bb53T31
002bS52
BYD14
BYD14D
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bR E D bb53T31 □□3Db40 RR1 « A P X Product Specification Philips Semiconductors BUK455-60A/B PowerMOS transistor GENERAL DESCRIPTION Q is n D S O N PARAMETER MAX. MAX. BUK455 Drain-source voltage Drain current (DC) Total power dissipation
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bb53T31
3Db40
BUK455-60A/B
BUK455
-TO220AB
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Untitled
Abstract: No abstract text available
Text: bb53T31 ODEMb^b bTb H A P X Philips Semiconductors N AUER PHILIPS/DISCRETE b7E D Product specification NPN 7 GHz wideband transistor FEATURES • BF752 PINNING PIN High power gain • Low noise figure • Gold metallization ensures excellent reliability. DESCRIPTION
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bb53T31
BF752
BF752
OT143
MSB014
OT143.
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Untitled
Abstract: No abstract text available
Text: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.
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bb53T31
BSS192
A/-10
bb53t
MC073B
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Untitled
Abstract: No abstract text available
Text: N AUER PHI L I P S / D I S CR E T E □ bE D bb53T31 DD1SE17 1 RZ1214B65Y T - 3 3 - 5 ~ PULSED M IC R O W A VE POWER TRANSISTOR N:P-N silicon microwave power transistor for use in a common-base, class-B wideband amplifier and operating under pulsed conditions in L-band radar applications.
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bb53T31
DD1SE17
RZ1214B65Y
T-33-IS
7Z94222
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E ]> bb53T31 DDSfllflS T7S I IAPX 2K U y4t> A SILICON SMALL-SIGNAL TRANSISTOR NPN small-signal transistor, in a plasticTO-92 envelope. It is intended for use in audio amplifier driver stages and low speed switching applications etc.
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bb53T31
plasticTO-92
2PA733.
100juA
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Untitled
Abstract: No abstract text available
Text: it N AFTER PHILIPS/DISCRETE 2SE I> bb53T31 001A7S1 3 • BUS23 SERIES T - 2 3 -'IS' SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in aTO-3 envelope, intended fo r use in converters, inverters, switching regulators, motor control systems etc.
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bb53T31
001A7S1
BUS23
BUS23B
BUS23B
BUS23C
BUS23B;
BUS23C.
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Untitled
Abstract: No abstract text available
Text: N AHER PHILIPS/DISCRETE bTE I> • bb53T31 D02bb00 flSO « A P X Philips specification BYD71 series Epitaxial avalanche diodes DESCRIPTION Rectifier diodes in hermetically sealed axial-leaded ID implosion
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bb53T31
D02bb00
BYD71
BYD71B
BYD71C
BYD71D
BYD71E
BYD71F
BYD71G
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bc177
Abstract: No abstract text available
Text: | N AMER PHILIPS/DISCRETE b'lE D bb53T31 Q0S7513 415 H A P X BC177 to 179 A.F. SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors in TO-18 metal envelopes with the collector connected to the case. The BC177 is a high-voltage type and primarily intended for use in driver stages of audio amplifiers
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bb53T31
Q0S7513
BC177
BC178
BC179
BC107,
0Q27S20
DD275S1
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Untitled
Abstract: No abstract text available
Text: bb53T31 0013551 7 • E5E I> N AMER P H I L I P S / D I S C R E T E BUT22B BUT22C _ :_ _ J v _ T - 3 3 - 1 3 SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-speed, glass-passivated npn power transistors in a TO-220 envelope intended fo r use
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bb53T31
BUT22B
BUT22C
O-220
T-33-13
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Untitled
Abstract: No abstract text available
Text: PowerMOS transistor_ BUZ72 N AMER PHILIPS/DISCRETE ObE D _ • bb53T31 0014430 7 ■ L r - 3 ^ - 1 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ72
bb53T31
O220AB;
T-39-11
bbS3T31
0D14435
bt53T31
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bb53T31 QDBflOB? 3^B PH2222 PH2222A IAPX SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in plastic TO-92 envelopes, primarily intended for switching and linear applications. QUICK REFERENCE DATA PH2222 PH2222A v CBO
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bb53T31
PH2222
PH2222A
1N916.
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Untitled
Abstract: No abstract text available
Text: bb53T31 0D24073 b03 H A P X Philips Semiconductors Product specification PN4416; PN4416A N-channel field-effect transistor N AMER PHILIPS/DISCRETE b?E ]> Q U IC K R E F E R E N C E DATA FEATURES SYM BOL • Low noise • Interchangeability of drain and source connections
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bb53T31
0D24073
PN4416;
PN4416A
PN4416
0024D7fl
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BST62
Abstract: BST60 BST61
Text: • bb53T31 DD2Sb41 4flb H A P X N AMER PHILIPS/DISCRETE BST60 BST61 BST62 b7E ]> JV P-N-P SILICON PLANAR DARLINGTON TRANSISTORS Silicon p-n-p planar Darlington transistors for industrial switching applications, e.g. print hammer, solenoid, relay and lamp driving. Encapsulated in a microminiature plastic SOT-89 envelope.
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bb53T31
DD2Sb41
BST60
BST61
BST62
OT-89
BST50,
BST51
BST52
BST62
BST60
BST61
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Untitled
Abstract: No abstract text available
Text: BDY90 BDY91 BDY92 bb53T31 0020037 2 N AHER PHILIPS/DISCRETE J 25E D r - 3 3 - a SILIC O N D IFFU SED PO W ER T R A N SIST O R S High-speed switching n-p-n transistors in a metal envelope intended for use in converters, inverters, switching regulators and switching control amplifiers.
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BDY90
BDY91
BDY92
bb53T31
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bb53T31 0032367 Tb4 • C A TV amplifier modules BGY584; BGY585 N Ar’ER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION PINNING -SOT115C PIN • Excellent linearity DESCRIPTION • Extremely low noise 1 input • Silicon nitride passivation
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bb53T31
BGY584;
BGY585
-SOT115C
BGY584
BGY584
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buz349
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE PowerMOS transistor ObE D • bb53T31 0014745 T ■ BUZ349 T " 31-13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bb53T31
BUZ349
TQ218AA;
bbS3131
T-39-13
b53131
D0147SQ
buz349
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Untitled
Abstract: No abstract text available
Text: N AMER PH IL IPS/D ISCR ETE b'lE » bb53T31 0030733 b32 « A P X Product Specification Philips Semiconductors BUK482-100A PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface
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bb53T31
BUK482-100A
OT223
Fig-14
riin76ter
bb53R31
DD3D736
OT223.
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