Untitled
Abstract: No abstract text available
Text: DEVELO PM ENTDATA " bbS3cl31 QQia?a3 5 • 11 This data sheat contains advance Information and specifications are subject to change without notice, BUS133 SERIES _ N AMER PHIL-IPS/DISCRETE 5SE j> T - 3 3 -1 5 " _ SILICON DIFFUSED POWER TRANSISTORS
|
OCR Scan
|
BUS133
BUS133H
BUS133
T-33-15
|
PDF
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE ]> bbS3cl31 DOETfciflM 430 BLY88C APX V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is
|
OCR Scan
|
BLY88C
bb53T31
|
PDF
|
PMSS3904 Philips SOT323
Abstract: transistor p04 p04 transistor PMSS3904 MARKING CODE D4t
Text: b b S 3 * î3 1 Philips Semiconductors □ □ 2 5 CJ2E 2 7 7 H A P X N AMER PHILIPS/DISCRETE NPN general purpose transistor FE A T U R E S Product specification b?E D PMSS3904 P IN C O N F IG U R A T IO N • S-m ini package. D E S C R IP T IO N N P N transistor in a plastic S O T 3 2 3
|
OCR Scan
|
bbS3T31
25CJ2E
PMSS3904
OT323
MAM062
bbS3T31
PMSS3904 Philips SOT323
transistor p04
p04 transistor
PMSS3904
MARKING CODE D4t
|
PDF
|
BT145-500R
Abstract: thyristor TAG 20 600 thyristor TAG 20 800 m2561 JS168 600R BT145 thyristor TAG 800
Text: N AMER PHILIPS/DISCRETE bTE D • t.bS3T31 []CI272bß flflT ■ BT145 SERIES THYRISTORS Glass-passivated 25 ampere th y ris to rs intended fo r use in applications involving high fatigue stress due to therm al c yclin g and repeated sw itching. These th y ris to rs feature a high surge cu rre n t
|
OCR Scan
|
bS3T31
CI272bÃ
BT145
BT145-500R
M2740
thyristor TAG 20 600
thyristor TAG 20 800
m2561
JS168
600R
thyristor TAG 800
|
PDF
|
Untitled
Abstract: No abstract text available
Text: • b b S a ' O l QQ24b5cl 72T « A P X N APIER P H I L I P S / D I S C R E T E BF570 b7E P 7 V SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic SOT-23 variant envelope, intended for use in large-signal handling i.f. pre amplifiers of TV receivers in combination with surface acoustic wave filters.
|
OCR Scan
|
QQ24b5cl
BF570
OT-23
|
PDF
|
bsx20
Abstract: No abstract text available
Text: bb53T31 0Q134AS b • BSX19 BSX20 A ~ V - i 5 '- / 5" SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-18 metal envelopes, primarily intended for high-speed saturated switching and h.f. amplifier applications. QUICK REFERENCE DATA BSX19 BSX20 v CBO
|
OCR Scan
|
bb53T31
0Q134AS
BSX19
BSX20
lcb53T31
00124Tb
bsx20
|
PDF
|
BUV98
Abstract: BUV98A BUV98AV BUV98V sot227a
Text: I I N AMER PHILIPS/DISCRETE b^E » • bbSB'iai DQSÔSÜ3 Mb3 « A P X BUV98 V BUV98A(V) A SILICON DIFFUSED POWER TRANSISTORS High-voltage, high-current, high-speed transistors, assembled in the isolated ISOTOP package; intended fo r use in inverters, converters and m otor control applications on 220 V to 380 V mains supplies.
|
OCR Scan
|
ABUV98
BUV98A
BUV98IV)
OT227B
BUV98V
BUV98
BUV98AV
sot227a
|
PDF
|