BC 104 NPN TRANSISTOR Search Results

BC 104 NPN TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3046	Rochester Electronics LLC	CA3046 - General Purpose NPN Transistor Array
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

BC 104 NPN TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ic 546 Abstract: 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b Text: BC 546 . BC 549 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0	Original	UL94V-0 ic 546 549B 546b transistors BC 548C ic 548 transistors 547C transistors BC 546 B bc 548b bc 104 npn transistor bc 547b	PDF
transistors BC 23 Abstract: 849B 847C 848B Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1	Original	OT-23 O-236) UL94V-0 transistors BC 23 849B 847C 848B	PDF
BC 620 Abstract: 847BW 846BW 850CW Text: BC 846W . BC 850W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 NPN Power dissipation – Verlustleistung 200 mW	Original	OT-323 UL94V-0 846AW 847AW 847BW 847CW 848AW 848BW 848CW 849BW BC 620 847BW 846BW 850CW	PDF
Untitled Abstract: No abstract text available Text: BC 846 . BC 850 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN NPN Power dissipation – Verlustleistung Plastic case Kunststoffgehäuse 1.1 2.9 ±0.1 0.4 1.3 ±0.1	Original	OT-23 O-236) UL94V-0	PDF
ZO 109 Abstract: BC 107 BC109 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230 Text: BC 107 BC 108 BC 109 SILICON PLANAR NPN LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC107, BC 108 and ESC 109 are silico n planar epitaxial NPN transistors in TO-18 metal case. They are suitable fo r use in driver stages, low noise input stages and signal processing circ u its of television receivers.	OCR Scan	BC109 BC177, BC178 BC179. ZO 109 BC 107 bc107 bc 109 BC108 bc 108 zo 107 X10-4 bc 230	PDF
BC860W Abstract: No abstract text available Text: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 1±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 Power dissipation – Verlustleistung 200 mW Plastic case	Original	OT-323 UL94V-0 856AW 857AW 857BW 857CW 858AW 858BW 858CW 859BW BC860W	PDF
Untitled Abstract: No abstract text available Text: BC 856W . BC 860W General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP 2±0.1 Type Code 1 1.25±0.1 3 2.1±0.1 0.3 1±0.1 Power dissipation – Verlustleistung 200 mW Plastic case	Original	OT-323 UL94V-0 856AW 857AW 858AW 856BW 857BW 858BW 859BW 860BW	PDF
856B Abstract: 858C Text: BC 856 . BC 860 General Purpose Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage PNP Power dissipation – Verlustleistung 1.3 ±0.1 2.5 max 3 Type Code SOT-23 TO-236 Weight approx. – Gewicht ca.	Original	OT-23 O-236) UL94V-0 856B 858C	PDF
bc 104 npn transistor Abstract: TRANSISTOR BC 6 pnp Text: BC 846PN NPN/PNP Silicon AF Transistor Array Preliminary data • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation	Original	846PN Q62702- OT-363 Nov-27-1996 bc 104 npn transistor TRANSISTOR BC 6 pnp	PDF
1ps sot Abstract: bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363 Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation	Original	847PN OT-363 Q62702-C2374 May-12-1998 1ps sot bc 104 npn transistor BC847PN1Ps Q62702-C2374 "two TRANSISTORs" sot-363 pnp npn 4E SOT-363	PDF
bc 104 npn transistor Abstract: npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c Text: BC 847PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applivations • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package Tape loading orientation	Original	847PN Q62702-C2374 OT-363 Jan-20-1997 bc 104 npn transistor npntransistor Q62702-C2374 4E SOT-363 TRANSISTOR BC 90 847PN 1Ps MARKING CODE TRANSISTOR BC 650 c	PDF
Untitled Abstract: No abstract text available Text: BC 846U PN NPN/PNP Silicon AF Transistor Array • For AF input stages and driver applications 5 4 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP 3 2 Transistors in one package 1 VPW09197 C1	Original	VPW09197 EHA07177 SC-74 EHP00365 EHP00364 EHP00368 EHP00369 Apr-22-1999	PDF
BC 547 data base Abstract: BC 548C Text: BC 546 . BC 549 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert	Original	UL94V-0 tter\Transistoren\bc546 BC 547 data base BC 548C	PDF
Untitled Abstract: No abstract text available Text: BC 546 . BC 549 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert	Original	UL94V-0	PDF

Q62702-C2537 Abstract: VPS05604 846P Text: BC 846PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 • High current gain 6 • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 1 Tape loading orientation	Original	846PN VPS05604 OT-363 Q62702-C2537 EHP00365 EHP00364 EHP00368 EHP00369 Sep-07-1998 Q62702-C2537 VPS05604 846P	PDF
Marking 1ps sot Abstract: VPS05604 Text: BC 847PN NPN/PNP Silicon AF Transistor Array 4 • For AF input stages and driver applications 5 6 • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated NPN/PNP Transistors in one package 2 3 1 VPS05604 Tape loading orientation	Original	847PN VPS05604 OT-363 EHA07193 EHA07177 OT-363 EHP00365 EHP00364 EHP00368 Marking 1ps sot VPS05604	PDF
transistor bc 144 Abstract: TRANSISTOR Text: SIEMENS NPN Silicon AF Transistor • • • • BC 368 High current gain High collector current Low collector-emitter saturation voltage Complementary type: BC 369 PNP Type Marking Ordering Code BC 368 - C62702-C747 PinCoinfigurat ion 1 2 3 E C Package1)	OCR Scan	C62702-C747 flS35fc D12D515 023SbGS Q15051L transistor bc 144 TRANSISTOR	PDF
H12E Abstract: No abstract text available Text: BC 857BL3, BC 858BL3 PNP Silicon AF Transistors Preliminary data For AF input stages and driver applications 3 High current gain Low collector-emitter saturation voltage 1 Complementary types: BC 847BL3, 2 BC 848BL3 NPN Type Marking Pin Configuration	Original	857BL3, 858BL3 847BL3, 848BL3 857BL3 H12E	PDF
transistor Bc 580 Abstract: TRANSISTOR BC 450 pnp transistor BC 660 Text: BC 847BL3, BC 848BL3 NPN Silicon AF Transistor Preliminary data For AF input stage and driver applications 3 High current gain Low collector-emitter saturation voltage 1 complementary types: BC 857BL3, 2 BC 858BL3 PNP Type Marking Pin Configuration	Original	847BL3, 848BL3 857BL3, 858BL3 847BL3 transistor Bc 580 TRANSISTOR BC 450 pnp transistor BC 660	PDF
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643	PDF
transistor Bc 580 Abstract: marking 1cs 847S transistor bc 100 Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code Pin Configuration	Original	OT-363 Q62702-2372 Jan-20-1997 transistor Bc 580 marking 1cs 847S transistor bc 100	PDF
transistor bc icbo nA npn Abstract: 847S Q62702-C2372 marking 1cs Text: BC 847S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors with high matching in one package Type Marking Ordering Code	Original	Q62702-C2372 OT-363 May-12-1998 transistor bc icbo nA npn 847S Q62702-C2372 marking 1cs	PDF
transistor BC 450 Abstract: marking 1DS sot363 1ds sot Text: BC 846S NPN Silicon AF Transistor Array Preliminary data • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two galvanic internal isolated Transistors in one package Type Marking Ordering Code	Original	OT-363 Q62702- Nov-27-1996 transistor BC 450 marking 1DS sot363 1ds sot	PDF
transistor BC 549 Abstract: transistor BC 550 TRANSISTOR BC 550 c TRANSISTOR BC 550 b TFK BC BC549 BC550 TRANSISTOR BC 135 BE550 TRANSISTOR BC 620 Text: BC 549 - BC 550 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Rauscharme V orstufen Application: Low noise prestages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W	OCR Scan		PDF

BC 104 NPN TRANSISTOR Search Results

BC 104 NPN TRANSISTOR Result Highlights (5)

BC 104 NPN TRANSISTOR Datasheets Context Search

ic 546

transistors BC 23

BC 620

Untitled

ZO 109

BC860W

Untitled

856B

bc 104 npn transistor

1ps sot

bc 104 npn transistor

Untitled

BC 547 data base

Untitled

Q62702-C2537

Marking 1ps sot

transistor bc 144

H12E

transistor Bc 580

ksd 302 250v, 10a

transistor Bc 580

transistor bc icbo nA npn

transistor BC 450

transistor BC 549