BC 536 TRANSISTOR Search Results

BC 536 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

BC 536 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TRANSISTOR bd 181 Abstract: TRANSISTOR BD 689 transistor bc 541 Marking code 722 SOT89 transistor BC 209 BCX52 BCX53 sot89 npn marking code 72 BCX54-10 BCX54-16 Text: DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 BCX54; BCX55; BCX56 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 24 Philips Semiconductors Product specification	Original	PDF	M3D109 BCX54; BCX55; BCX56 BCX51, BCX52 BCX53. TRANSISTOR bd 181 TRANSISTOR BD 689 transistor bc 541 Marking code 722 SOT89 transistor BC 209 BCX53 sot89 npn marking code 72 BCX54-10 BCX54-16
smd transistor N2 1p Abstract: transistor BC rx std 7614 FBC 30 A bc 107 colpitts oscillator fsk modulation and demodulation TH701 Text: 7+ 868/915MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator	Original	PDF	868/915MHz LQFP44 TH7111 smd transistor N2 1p transistor BC rx std 7614 FBC 30 A bc 107 colpitts oscillator fsk modulation and demodulation TH701
HC-49SMD Abstract: smd transistor N2 1p H*49S transistor BC rx BC115 smd transistor nd 2e PLL FSK DEMODULATOR ,double down conversion superheterodyne receiver transistor 24 lq smd transistor Text: 7+ 315/433MHz FSK/FM/ASK Double-Conversion Superheterodyne Receiver HDWXUHV Y Y Y Y Y Y Y Y Double superhet architecture for high degree of image rejection FSK for digital data and FM reception for analog signal transmission FM/FSK demodulation either with phase-coincidence or PLL demodulator	Original	PDF	315/433MHz LQFP44 TH7110 HC-49SMD smd transistor N2 1p H*49S transistor BC rx BC115 smd transistor nd 2e PLL FSK DEMODULATOR ,double down conversion superheterodyne receiver transistor 24 lq smd transistor
GC 72 smd diode Abstract: smd zener diode color band TDA4882 smd zener diode color band 4.7 transistor BC 584 6 PIN STR FOR 17 INCH MONITOR 6 pin STR MONITOR IC bc 339 GC smd diode BAV21 Text: INTEGRATED CIRCUITS DATA SHEET TDA4882 Advanced monitor video controller for OSD Product specification Supersedes data of December 1994 File under Integrated Circuits, IC02 1997 Sep 04 Philips Semiconductors Product specification Advanced monitor video controller for OSD	Original	PDF	TDA4882 SCA55 547047/1200/02/pp28 GC 72 smd diode smd zener diode color band TDA4882 smd zener diode color band 4.7 transistor BC 584 6 PIN STR FOR 17 INCH MONITOR 6 pin STR MONITOR IC bc 339 GC smd diode BAV21
transistor BC 536 Abstract: aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor Text: BU 536 TTdUFHiKiKIiM electronic Creati»Technologies' Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique Short switching time • Glass passivation Power dissipation 62 W • High reverse voltage	OCR Scan	PDF	V777- T0126 15A3D1N 15A3DIN transistor BC 536 aeg power base 60 b transistor BU 536 transistor bu 311 MARKING JM T0p3 BU 103A transistor BU536 BC 536 BC 536 transistor
BCX51 BCX52 BCX53 AB Abstract: BCX51 BCX52 BCX53 sot-89 Marking aj Text: ô23SbQS DD242Sb b W S I E G L47E D PNP AF Transistors T '3 ^ BCX 51 BCX 53 1 7 SIEMENS AKTIENGESEL LSCH AF _ • • • • For A F driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: B C X 54 - . B C X 56 NPN	OCR Scan	PDF	235b05 DD2422b 103mA BCX53 BCX51 BCX52 BCX53 AB BCX51 BCX52 BCX53 sot-89 Marking aj
on 2518 transistor Abstract: transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11 Text: TELEFUNKEN ELECTRONIC 17E D • Ô ^ Ü O T b 000e]Liö3 3 ■ ALG6 • BU 536 'ïTifLf FMKdM electronic CreativeTecbnotojpe* T-33-11 Silicon NPN Power Transistor Applications: Switching mode power supply Features: • In triple diffusjon technique • Short switching time	OCR Scan	PDF	T-33-11 15A3DIN on 2518 transistor transistor BU 536 transistor BC 536 C 3311 transistor 536 transistor T-33-11
SSY20 Abstract: SF828 VEB mikroelektronik funkamateur BUX 127 SF126 SF 127 SF128 SF826 SF 829 B Text: FUNKAMATEUR-Bauelementeinformation DDR-SiliziumTransistoren Typenübersicht Si-Transistoren des VEB Kombinat Mikroelektronik Grenzdaten Zonen Vorzugs anwendungen2 folge P,o, [mW, W ] Typ1 Kenndaten UcBO U ceO T • T * 1C , ACsat [V] [V] [mA, (A)] fiT3	OCR Scan	PDF
NBC107 Abstract: PH BC107 BC 109B BC107 Tr BC109 Text: DISCRETE SEMICONDUCTORS BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 Philips Semiconductors 1997 Sep 03 PHILIPS Philips Semiconductors Product specification	OCR Scan	PDF	BC107; BC108; BC109 117047/00/04/pp8 NBC107 PH BC107 BC 109B BC107 Tr BC109
C849 Abstract: BC850 SOT23 276.C850 Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T BC849; BC850 NPN general purpose transistors Product specification Supersedes data of 1997 Sep 02 File under Discrete Semiconductors, SC10 Philips Sem iconductors 1998 Aug 06 PHILIPS Philips Semiconductors Product specification	OCR Scan	PDF	BC849; BC850 BC860. 115104/00/04/pp8 C849 BC850 SOT23 276.C850
transistor BC 536 Abstract: TRANSISTOR IFW MK 2051 sanyo CG 2SC3066 transistor bc 537 bt 2025 TRANSISTOR IFW 27 HO 60-NP Text: SANYO SEMICONDUCTOR CORP 3EE D 7 tH 7 D 7 b DOCHEl? 7 T - A .9 - A 1 N P N Epitaxial Planar Silicon C om posite Transistor 2029A Differential Am p Applications 976B Applications . Differential amp, current mirror Features . Excellent in t h e r m a l e q u i l i b r i u m and suited for use in d i f f e r e n t i a l a m p	OCR Scan	PDF	T-91-20 SC-43 transistor BC 536 TRANSISTOR IFW MK 2051 sanyo CG 2SC3066 transistor bc 537 bt 2025 TRANSISTOR IFW 27 HO 60-NP
2SC306 Abstract: 2SC3066 Text: SANY O S E M I C O N D U C T O R CORP 3EE D 7 tH 7 D 7 b DOCHEl? 7 N P N Epitaxial Planar Silicon C om posite Transistor 2029A Differential Amp Applications 976B Applications . Differential amp, current mirror Features . Excellent in t h e r m a l e q u i l i b r i u m and suited for use in d i f f e r e n t i a l a m p	OCR Scan	PDF	T-91-20 SC-43 2SC306 2SC3066
2SA1210 Abstract: 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536 Text: SANYO SEMICONDUCTOR CORP IE E D I 7 cH 7 0 7 b T - a - c n 2SC2912 NPN /pnp Epitaxial Planar Silicon Transistors 200 9A High Voltage Switching, AF 1 5 0 W Predriver Applications 2SA1210 780C Features • Adoption o f FBET process • High breakdown voltage	OCR Scan	PDF	2SC2912 707Li 2SA1210 Characteristics/H81 B1252 0DGB752 2SA1210 2SC2912 P33-07 A1210 la 1201 sanyo TO-220AA transistor BC 536
ksd 302 250v, 10a Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643 Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle	OCR Scan	PDF	CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

Transistor 2SA 2SB 2SC 2SD Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59 Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle	OCR Scan	PDF
VEB mikroelektronik Abstract: mikroelektronik DDR mikroelektronik RFT elektronik DDR DDR Schaltkreise bauelemente DDR elektronische bauelemente rft Transistoren DDR service-mitteilungen RFT Service Mitteilung Text: RFT INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN Ausgabe ¡^M\radio-te/evision\ Ckt. 1988 f VEB 00 SERVICE-MITTEILUNGEN Seite 1-9 Mitteilung aus dem VEB RFT IV RuF Leipzig/Servicevorbereitung Effektive Eroduktionstechnologie in der KonBumguterelektronik - kontra Heparaturtechnologie ?	OCR Scan	PDF
APC UPS CIRCUIT DIAGRAM rs 1500 Abstract: APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700 Text: 1 2 AF106 G E R M A N IU M MESA PNP VHF MIXER/OSCILLATOR The AF 106 is a germanium mesa PNP transistor in a Jedec TO-72 metal case. It Is particularly designed for use as preamplifier mixer and oscillator up to 260 MHz. ABSOLUTE MAXIMUM RATINGS ^CBO VcEO ^EBO	OCR Scan	PDF	AF106 AF106 APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM UPS APC rs 1000 CIRCUIT diagram UPS APC rs 800 CIRCUIT diagram APC Back ES 500 UPS circuit diagram CIRCUIT DIAGRAM APC UPS 700
TFK diodes BYW 76 Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35	OCR Scan	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	PDF	2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
3866S Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
catalogue des transistors bipolaires de puissance Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91 Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM	OCR Scan	PDF
transistor HAN 819 Abstract: No abstract text available Text: QPA602 High-Speed Precision Difet• OPERATIONAL AMPLIFIER APPLICATIONS FEATURES • • • • • • • PRECISION INSTRUMENTATION WIDE BANDWIDTH: 6.5MHz HIGH SLEW RATE: 35V/}ia LOW OFFSET: ±250\|iV max LOW BIAS CURRENT: ±1pA max FAST SETTLING TIME: 1 ji* to 0.01%	OCR Scan	PDF	OPA602 OPA602 25rrw transistor HAN 819
1.0 k mef 250 Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a	OCR Scan	PDF	semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
HBF4727A Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product	OCR Scan	PDF

BC 536 TRANSISTOR Search Results

BC 536 TRANSISTOR Result Highlights (5)

BC 536 TRANSISTOR Datasheets Context Search

TRANSISTOR bd 181

smd transistor N2 1p

HC-49SMD

GC 72 smd diode

transistor BC 536

BCX51 BCX52 BCX53 AB

on 2518 transistor

SSY20

NBC107

C849

transistor BC 536

2SC306

2SA1210

ksd 302 250v, 10a

Transistor 2SA 2SB 2SC 2SD

VEB mikroelektronik

APC UPS CIRCUIT DIAGRAM rs 1500

TFK diodes BYW 76

2N2222A 338

3866S

catalogue des transistors bipolaires de puissance

transistor HAN 819

1.0 k mef 250

HBF4727A