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    BC 558 TRANSISTOR Search Results

    BC 558 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    BC 558 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    ic 558

    Abstract: ic 556 transistors BC 548 BC 558 ic 556 specifications BC557 BC558 556 driver BC558 driver bc 558 transistors BC 548 BC 558 PNP
    Text: BC 556 • BC 557 • BC 558 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Applications: Pre and driver stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W


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    bc557

    Abstract: BC557A BC557 MOTOROLA transistor BC 557B bc556b bc556 motorola BC 557 PNP TRANSISTOR circuits BC556 BC557C BC558B
    Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45


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    BC556/D BC556 BC557A BC558B BC556/D* bc557 BC557 MOTOROLA transistor BC 557B bc556b bc556 motorola BC 557 PNP TRANSISTOR circuits BC557C BC558B PDF

    BC557A

    Abstract: BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B
    Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45


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    BC556/D BC556 BC557A BC558B 226AA) BC558 BC558ZL1 O-226) \\Roarer\root\data13\imaging\BITTING\cpl mismatch\20000817\08162000 BC557 MOTOROLA BC558B BC 557 PNP TRANSISTOR circuits BC558 motorola bc556b transistor BC 557B PDF

    BC557A

    Abstract: BC556B BC558B transistor BC 557B BC556 BC557 BC557C BC558 transistor BC 557 BC558 MOTOROLA
    Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45


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    BC556/D BC556 BC557A BC558B BC556/D* BC556B BC558B transistor BC 557B BC557 BC557C BC558 transistor BC 557 BC558 MOTOROLA PDF

    transistor BC 557B

    Abstract: BC557A BC556B BC557 MOTOROLA BC557C 557B BC557/558 BC 557 PNP TRANSISTOR circuits operation of BC557 TRANSISTOR pin out TRANSISTOR bc557
    Text: MOTOROLA Order this document by BC556/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC556,B PNP Silicon BC557A,B,C BC558B COLLECTOR 1 2 BASE 3 EMITTER MAXIMUM RATINGS 1 2 Symbol BC 556 BC 557 BC 558 Unit Collector – Emitter Voltage VCEO –65 –45


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    BC556/D BC556 BC557A BC558B BC556/D* transistor BC 557B BC556B BC557 MOTOROLA BC557C 557B BC557/558 BC 557 PNP TRANSISTOR circuits operation of BC557 TRANSISTOR pin out TRANSISTOR bc557 PDF

    BC 247 b transistor

    Abstract: C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b
    Text: - 25C D • Ô235b05 O O O m ^ b □ H S I E 6 - Q PNPSiliconTransistors B C 5 5 6 -B C 5 6 0 ' SIEMENS AKTIENGESELLSCHAF- 2 % - 2 . 1 for AF input and driver stages BC 556, BC 557, BC 558, BC 559, and BC 560 are epitaxial PNP silicon Planartransistors in


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    235b05 BC556' BC556VI BC556A BC556B BC5571 BC557VI BC557A BC557B BC5581 BC 247 b transistor C558B transistor BC 247 transistor BC 245 bc 558 equivalent bc560 bc556b equivalent BC 247 Transistor - BC 547, CL 100 transistor 557 b PDF

    transistor BC 458

    Abstract: transistor BC 557 BC 458 transistor
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 transistor BC 557 BC 458 transistor PDF

    BC557

    Abstract: transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC557 transistor marking bc557 BC557BTA BC557 TRANSISTOR application BC557BTF information of BC557 PDF

    BC559

    Abstract: transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC559 transistor BC 458 BC 458 transistor BC560 ic 558 TRANSISTOR bc560 BC546 BC556 BC 557 PNP TRANSISTOR PDF

    transistor BC 458

    Abstract: BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 transistor BC 458 BC 458 transistor bc546 fairchild BC546 BC556 BC559 BC560 BC558 PNP transistor PDF

    TRANSISTOR BC 560c

    Abstract: transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 TRANSISTOR BC 560c transistor BC 458 Transistor BC 559B bc560 bc558c bc557 cross reference BC557/bc557 cross reference TRANSISTOR BC 560 PDF

    of transistor bc558

    Abstract: bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 of transistor bc558 bc558 transistor BC 458 transistor bc558 features information of BC558 TRANSISTOR C 557 B BC558TAR bc560 PDF

    BC559CTA

    Abstract: bc560
    Text: BC556/557/558/559/560 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 . BC 550 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 BC559CTA bc560 PDF

    BC557

    Abstract: TRANSISTOR C 557 B transistor BC557 base collector emitter bc558 transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC
    Text: MCC TO-92 P lastic-E n capsu late T ran sisto rs BC556,B/BC557,A,B,C/BC558,B TRANSISTOR PNP FEATU RES dissipation 0.6 2 5 W (T am b=25'C ) Pcm : current IcM : -0.1 A BC 556 : -80 V V cbo; BC 557 : -50V BC 558 : -30 V storage junction temperature range Tj.Tstg: -5 5 ° C to + 150°C


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    BC556 B/BC557 C/BC558 BC557 BC558 BC556 BC558 TRANSISTOR C 557 B transistor BC557 base collector emitter transistor 557 b transistor BC558 base collector emitter BC558 pnp transistor BC558B transistor c 557 BC557B MCC PDF

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AF AMPLIFIER • HIGH VOLTAGE: BC556, V Ce o = -6 5 V • LOW NOISE: BCSS9, BC560 • Complement to BC546 . BC 550 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Symbol Characteristic Collector Base Capacitance


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    BC556/557/558/559/560 BC556, BC560 BC546 BC556 BC557/560 BC558/559 PDF

    bc556

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC556/557/558/559/560 SWITCHING AND AMPLIFIER . HIGH VO LTAG E: BC556, VCEo= -65V . LOW NOISE: BC559, BC560 • C om plem ent to BC546 . BC 550 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base C apacitance


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    BC556/557/558/559/560 BC556, BC559, BC560 BC546 BC556 BC557/560 BC558/559 bc556 PDF

    transistors BC 558c

    Abstract: BC556A CBC557 558a BC556-A EO65
    Text: M OTOROLA SC 12E D I t,3b?25M QOflSflbT S | XSTRS/R F BC556, A, B BC557, A, B, C BC558, A, B, C M A X IM U M R A T IN G S Sym bol R a t in g BC BC BC 556 557 558 U n it C o lfe c t o r - E m it t e r V o lta g e VCEO 65 45 30 Vdc C o lle c t o r - B a s e V o lta g e


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    bc 558 equivalent

    Abstract: pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent
    Text: 1 of 1 HONEY TO-92 Transistors Japan Type Equivalent Table PNP Silicon Epitaxial Planar Transistor To-92 Plastic Package JAPAN HONEY JAPAN HONEY JAPAN HONEY 2SA467 HN / BC 327 / 8550 2SA578 HN / BC 560 / 9015 2SA721 HN / BC 559 / 9015 2SA494 HN / BC 559 / 9015


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    To-92 2SA467 2SA578 2SA721 2SA494 2SA579 2SA723 2SA495 2SA608 2SA724 bc 558 equivalent pnp transistor 9015 transistor BC 557 equivalent transistor 8550 BC 9015 transistor 2SA733 equivalent 2SA561 equivalent 2SA733 transistor equivalent transistor bc 558 2SA562 equivalent PDF

    bc 339

    Abstract: bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B
    Text: SIE D SIEM ENS • fl235b05 O O m b l b ÔTb « S I E G SIEMENS AKTIENGESELLSCHAF T v fl- Z l PNP Silicon AF Transistors • • • • BC 556 . BC560 High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 546, BC 547,


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    fl235b05 BC560 Q62702-C692 Q62702-C692-V1 Q62702-C692-V2 Q62702-C693 Q62702-C693-V1 Q62702-C693-V2 Q62702-C694 Q62702-C694-V1 bc 339 bc560 bc558c cbc560 bc557 bc560c ic 556 BC556A AMI siemens BC557B PDF

    transistor bc 488

    Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
    Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .


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    BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B PDF

    C 547 B pin configuration

    Abstract: transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B
    Text: general purpose transistors — plastic case o transistors usage général — boîtier plastique THOMSON-CSF Characteristic» at 25°C M axim um ratings Type N PN PIMP Ptot VcEO mW (V) min zzzz zzzz zzzz / lc h21E V C E (sat) / lc/*B *T C22b Fb 1KHz max


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    CB-76 BC317P. C 547 B pin configuration transistors BC 548 BC 558 bc 547 557 C 547 C transistors BC 546 B C 548 B BC Transistors BC 547 pnp transistors BC 548 C 547 B PDF

    BC 546 BP

    Abstract: bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740
    Text: general purpose transistors — plastic case O transistors usage général — boîtier plastique Type NPN M axim um ratings PNP pto t v CEO mW (V) 45 Characteristics a t 25°C h 2lE min N N N N N N N N N N BC 317 BC 317 A BC 317 B BC 320 BC 320 A BC 320 B


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    CB-76 BC317P. BC 546 BP bc 547 bp transistors BC 548 BC 558 PNP 337A1 3001 pnp BC 557 npn tr bc 337 transistors BC 487 transistors BC 548 BC 558 33740 PDF

    transistors BC 557C

    Abstract: transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b
    Text: BC 556 . BC 559 PNP General Purpose Transistors Si-Epitaxial PlanarTransistors PNP Power dissipation – Verlustleistung 500 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0


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    UL94V-0 transistors BC 557C transistors BC 558c 556B transistor BC 557B ic 556 datasheet 559C transistors bc 557b ic 556 558B equivalent bc 558b PDF

    C 547 C

    Abstract: C 548 B C 547 B ic 548 bc 547 Transistors bc 548 BC 546 BC548 BC 548 bc 548 B 15
    Text: BC 546 • BC 547 • BC 548 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendung: Vor- und Treiberstufen Application: Pre and d river stages Besondere Merkmale: Features: • Verlustleistung 500 mW • Power dissipation 500 m W


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