C945K
Abstract: c550b C548B TO-92 227 1020 C2785 bc 9013 MPS6521 pn3565 cs9015 C559B
Text: NPN Low Level Amplifiers Device No. [Mark] K S C 900 Case Style I CBO IC V CE VCB h FE & @ Min Max mA (V) (nA) @ (V) Max V CE(SAT) (V) Max & V BE(SAT) V BE(ON) * IC @ (mA) IC C ob (pF) (V) (I = ) Min Max B 10 Max I (MHz) @ C Min (mA) NF (dB) Max Test Cond.
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Original
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T5089
O-236
SS9011
C945K
c550b
C548B
TO-92 227 1020
C2785
bc 9013
MPS6521
pn3565
cs9015
C559B
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev. 1.21. Apr. 2012 M474B5173BH0 M474B1G73BH0 204pin Unbuffered ECC SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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M474B5173BH0
M474B1G73BH0
204pin
78FBGA
K4B4G0846B
512Mbx8
1Gx72
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PDF
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EXAR BOOK
Abstract: No abstract text available
Text: PM4341A T1XC APPLICATION NOTE PMC-940934 ISSUE 3 THE T1XC IN LONG-HAUL APPLICATIONS PM4341A USING THE T1XC IN LONG-HAUL APPLICATIONS APPLICATION NOTE ISSUE 3: SEPTEMBER 1997 PMC-Sierra, Inc. 105 - 8555 Baxter Place Burnaby, BC Canada V5A 4V7 604 .415.6000
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Original
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PM4341A
PMC-940934
PM4341A
PM-940934
EXAR BOOK
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PDF
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Untitled
Abstract: No abstract text available
Text: COVER DATA SHEET 2GB Unbuffered DDR3L SDRAM DIMM EBJ20EF8EDWA 256M words 72 bits, 1 Rank Specifications Features • Density: 2GB • Organization — 256M words 72 bits, 1 rank • Mounting 9 pieces of 2G bits DDR3L SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory
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Original
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EBJ20EF8EDWA
240-pin
1600Mbps/1333Mbps
M01E1007
E1862E20
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PDF
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Untitled
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 4GB DDR3L SDRAM SO-DIMM EBJ40EG8EFUA 512M words 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3L SDRAM sealed in FBGA • Package: 204-pin socket type small outline dual in-line
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Original
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EBJ40EG8EFUA
204-pin
1600Mbps
1333Mbps/1066Mbps
/800Mbps/667Mbps
M01E1007
E1979E10
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PDF
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Untitled
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 4GB Unbuffered DDR3L SDRAM DIMM EBJ40EG8EFWA 512M words 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3L SDRAM sealed in FBGA
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Original
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EBJ40EG8EFWA
240-pin
1600Mbps/1333Mbps
M01E1007
E1952E10
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PDF
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Untitled
Abstract: No abstract text available
Text: COVER DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWB 512M words x 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words × 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory
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Original
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EBJ40EG8BFWB
240-pin
1866Mbps/1600Mbps/1333Mbps
M01E1007
E1977E30
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PDF
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Untitled
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWA 512M words 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA
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Original
|
EBJ40EG8BFWA
240-pin
1866Mbps/1600Mbps/1333Mbps
M01E1007
E1951E10
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PDF
|
Untitled
Abstract: No abstract text available
Text: COVER DATA SHEET 4GB Unbuffered DDR3 SDRAM DIMM EBJ40EG8BFWB 512M words 72 bits, 1 Rank Specifications Features • Density: 4GB • Organization — 512M words 72 bits, 1 rank • Mounting 9 pieces of 4G bits DDR3 SDRAM sealed in FBGA • Package: 240-pin socket type dual in-line memory
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Original
|
EBJ40EG8BFWB
240-pin
1866Mbps/1600Mbps/1333Mbps
M01E1007
E1977E20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Rev. 1.2, Aug. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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M378B2873GB0
M391B2873GB0
M378B5673GB0
M391B5673GB0
240pin
78FBGA
128Mbx8
256Mx64/x72
M378/91B5673GB0
K4B1G0846G-BCâ
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev. 1.1, Apr. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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M378B2873GB0
M391B2873GB0
M378B5673GB0
M391B5673GB0
240pin
78FBGA
128Mbx8
256Mx64/x72
M378/91B5673GB0
K4B1G0846G-BC
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev. 1.2, Aug. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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M378B2873GB0
M391B2873GB0
M378B5673GB0
M391B5673GB0
240pin
78FBGA
128Mbx8
256Mx64/x72
M378/91B5673GB0
K4B1G0846G-BC
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PDF
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CC1100
Abstract: CC1150 DN012
Text: Design Note DN012 Programming Output Power on CC1100 and CC1150 By Charlotte Seem Keywords • PATABLE Register Settings • Output Power Levels • Current Consumption 1 • CC1100 • CC1150 Introduction The CC1100 and CC1150 RF output power level is set by the PATABLE
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Original
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DN012
CC1100
CC1150
CC1100
CC1150
SWRA150A
DN012
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PDF
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CD 5888 CB
Abstract: emc2112 diode cc 3053 ba 5888 CD 5888 DA 2688 Transistor BC 1078 cc 3053 6A 1176 CD 7808
Text: AN 17.4 RPM to TACH Counts Conversion 1 Preface This application note provides look up tables for the calculation of RPM to TACH Counts for use with the EMC2103, EMC2104, EMC2105, EMC2106, EMC2112, EMC2113, EMC2301, EMC2302, EMC2303, and EMC2305. 2 Audience
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EMC2103,
EMC2104,
EMC2105,
EMC2106,
EMC2112,
EMC2113,
EMC2301,
EMC2302,
EMC2303,
EMC2305.
CD 5888 CB
emc2112
diode cc 3053
ba 5888
CD 5888
DA 2688
Transistor BC 1078
cc 3053
6A 1176
CD 7808
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Rev. 1.1, Jul.2011 M391B1G73BH0 240pin Unbuffered DIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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Original
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M391B1G73BH0
240pin
78FBGA
512Mbx8
1Gx72
K4B4G0846B-HY
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PDF
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M391B1G73BH0
Abstract: m391b1g
Text: Rev. 1.2, Jan.2012 M391B1G73BH0 240pin Unbuffered DIMM based on 4Gb B-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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Original
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M391B1G73BH0
240pin
78FBGA
512Mbx8
1Gx72
K4B4G0846B-HY
M391B1G73BH0
m391b1g
|
PDF
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Untitled
Abstract: No abstract text available
Text: Rev. 1.2, Aug. 2011 M391B2873GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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M391B2873GB0
M391B5673GB0
240pin
78FBGA
K4B1G0846G-BYâ
128Mbx8
256Mxx72
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PDF
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12VDC sf 249
Abstract: 230 97o Osram LED SMD 5630 diodo 2B
Text: 2013 Catalogo VLM 2013 VLM Catalogue 2013 since 1945 570 www.vlm.it since 1945 Indice Index Indicazioni Generali General warnings 575 Simboli e definizioni Symbols and definitions 577 Tipi, classi, gradi di protezione Types, classes, degrees of protection
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Original
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VG/71P
VG/73P
VL-5081-65-B
VL-5081-65-BV
VL-5081-85-B
VL-5081-85-BV
12VDC sf 249
230 97o
Osram LED SMD 5630
diodo 2B
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PDF
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M391B5673GB0
Abstract: m391b5673gb m391b5673 CL-nRCD-nRP
Text: Rev. 1.2, Aug. 2011 M391B2873GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 1.35V 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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M391B2873GB0
M391B5673GB0
240pin
78FBGA
K4B1G0846G-BY
128Mbx8
256Mxx72
M391B5673GB0
m391b5673gb
m391b5673
CL-nRCD-nRP
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PDF
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Untitled
Abstract: No abstract text available
Text: SG572288FH8D0UU January 23, 2008 Ordering Information Part Numbers Description Module Speed SG572288FH8D0KA 128Mx72 1GB , DDR3, 240-pin Unbuffered DIMM, ECC, 64Mx8 Based, DDR3-800-555, 30.00mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG572288FH8D06B
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Original
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SG572288FH8D0UU
SG572288FH8D0KA
128Mx72
240-pin
64Mx8
DDR3-800-555,
PC3-6400
SG572288FH8D06B
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PDF
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Untitled
Abstract: No abstract text available
Text: Rev. 1.01, Dec. 2010 M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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Original
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M378B2873GB0
M391B2873GB0
M378B5673GB0
240pin
78FBGA
128Mbx8
256Mx64
K4B1G0846G-BC
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PDF
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intel g31 chipset motherboard
Abstract: FCBGA 956 pin intel 945 90 nm CMOS DIODE AJ13 MOBILE PLATFORM 2008 POWER MANAGEMENT solution for auto shut down of P4 motherboard ST BB6 A110 945GU
Text: Intel Processor A100 and A110 on 90 nm Process with 512-KB L2 Cache Datasheet January 2008 Document Number: 316908-002 IINFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS
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Original
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512-KB
intel g31 chipset motherboard
FCBGA 956 pin
intel 945
90 nm CMOS
DIODE AJ13
MOBILE PLATFORM 2008 POWER MANAGEMENT
solution for auto shut down of P4 motherboard
ST BB6
A110
945GU
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PDF
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Untitled
Abstract: No abstract text available
Text: SG572568FH8DWUU October 16, 2009 Ordering Information Part Numbers Description Module Speed SG572568FH8DWKA 256Mx72 2GB , DDR3, 204-pin Unbuffered SO-UDIMM, ECC, 128Mx8 Based, DDR3-800-555, 25.40mm, Green Module (RoHS Compliant). PC3-6400 @ CL 5, 6 SG572568FH8DW6B
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Original
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SG572568FH8DWUU
SG572568FH8DWKA
256Mx72
204-pin
128Mx8
DDR3-800-555,
PC3-6400
SG572568FH8DW6B
|
PDF
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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OCR Scan
|
B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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PDF
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