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    BC184L TRANSISTOR Search Results

    BC184L TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BC184L TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transistor BC 458

    Abstract: BC184l transistor code 458 055 transistor bc184l BC 458 transistor 184L bc184L npn transistor bc icbo nA npn 3184L BC184* transistor
    Text: BC184L BC184L Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


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    BC184L 100mA BC184L transistor BC 458 transistor code 458 055 transistor bc184l BC 458 transistor 184L bc184L npn transistor bc icbo nA npn 3184L BC184* transistor PDF

    BC184L equivalent

    Abstract: BC184L
    Text: BC184L BC184L Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


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    BC184L 100mA BC184L equivalent BC184L PDF

    transistor bc184l

    Abstract: BC184L BC184L equivalent
    Text: BC184L BC184L Silicon NPN Small Signal Transistor Note 1 • BVCEO = 30V (Min.) • hFE = 130 (Min.) @VCE = 5.0V, IC = 100mA TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage


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    BC184L 100mA transistor bc184l BC184L BC184L equivalent PDF

    TRANSISTOR BC 413

    Abstract: ic ua 413 bc transistor icbo nA BC184L equivalent BC184l transistor TRANSISTOR BC 135 transistor BC 667 transistor bc icbo nA npn BC184L NPN SMALL SIGNAL TRANSISTOR
    Text: DISCRETE POWER & SIGNAL TECHNOLOGIES BC184L SILICON NPN SMALL SIGNAL TRANSISTOR 1 BVCEO . . . . 30 V Min hFE . . . . 130 (Min) @ VCE = 5.0 V, IC = 100 mA ABSOLUTE MAXIMUM RATINGS (NOTE 1) TEMPERATURES Storage Temperature -55 Degrees C to Operating Junction Temperature


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    BC184L TRANSISTOR BC 413 ic ua 413 bc transistor icbo nA BC184L equivalent BC184l transistor TRANSISTOR BC 135 transistor BC 667 transistor bc icbo nA npn BC184L NPN SMALL SIGNAL TRANSISTOR PDF

    BC184L pin out

    Abstract: BC184L BC184 BC184L equivalent BC184LC BC184LB bc184L npn transistor bc184l
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC184L, BC184LB BC184LC TO-92 Plastic Package General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    BC184L, BC184LB BC184LC C-120 BC184L pin out BC184L BC184 BC184L equivalent BC184LC BC184LB bc184L npn transistor bc184l PDF

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC184L, BC184LB BC184LC TO-92 Plastic Package General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    BC184L, BC184LB BC184LC C-120 PDF

    BC184L pin out

    Abstract: BC184L equivalent BC184L BC184l transistor transistor bc184l BC184* transistor BC184LC BC184LB
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL AMPLIFIER TRANSISTORS BC184L, BC184LB BC184LC TO-92 Plastic Package General Purpose Amplifier Transistors ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


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    BC184L, BC184LB BC184LC C-120 BC184L pin out BC184L equivalent BC184L BC184l transistor transistor bc184l BC184* transistor BC184LC BC184LB PDF

    Untitled

    Abstract: No abstract text available
    Text: BCI84 BCI84L BC2I4 BC2I4L COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS 1 The BC184, BC184L NPN and BC214, BC214L (PNP) are complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as for low noise pre-amplifiers


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    BCI84 BCI84L BC184, BC184L BC214, BC214L BC184 BC214 PDF

    BC184

    Abstract: BC214 BC184L transistor BC184 BC214L BCI84L Small Signal Amplifiers LBC184 bc184L npn BCI84
    Text: BCI84 BCI84L BC2I4 BC2I4L COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS I TO-92B The BC184, BC184L NPN and BC214, BC214L (PNP) are complementary silicon planar epitaxial transistors for use in AF small signal amplifiers and drivers, as well as for low noise pre-amplifiers


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    BCI84 BCI84L BC184, BC184L BC214, BC214L O-92B BC184 BC214 BC184L transistor BC184 BC214L Small Signal Amplifiers LBC184 bc184L npn PDF

    BC548 Texas Instruments

    Abstract: SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557
    Text: 1 Silect Coding Silect transistors are coded on the indexing flat of the TO-92 outline. Pin Configurations The majority of Silect transistors shown are available in several alternative case outlines or pin configurations which include many pre-formed lead types. Devices are therefore available


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    SX4061 2N4061T05 2N3709, 2N4062 SX4062 2N4062T05 2N3710, 2N3711 BC546 BC547 BC548 Texas Instruments SX3711 BC182L complementary 2N3708 BC183L BC214 alternative BC182 BC547 2n4058 bc182l pin configuration pnp transistor BC557 PDF

    BC183

    Abstract: bc183l BC213L BC213 bc214 100MHZ NPN TRANSISTORS
    Text: BC183 »L • B C 2 1 3 >L COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS TO-92B The BC183, BC183L NPN & BC213, BC213L (PNP) are complementary silicon planar epitoxial transistors for use in AF small signal amplifiers and drivers, as well as for low power


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    BC183 O-92B BC183, BC183L BC213, BC213L BC184L BC214L BC184 BC214 BC183 bc183l BC213L BC213 bc214 100MHZ NPN TRANSISTORS PDF

    BC213

    Abstract: BC183L BC183 Small Signal Amplifiers BC213L BC184L BC213 transistor BC184 BC214 BC214L
    Text: BC183 »L • B C 2 1 3 >L COMPLEMENTARY SILICON AF SMALL SIGNAL AMPLIFIERS & DRIVERS I TO-92B The BC183, BC183L NPN & BC213, BC213L (PNP) are CD I complementary silicon planar epitoxial transistors ; «i $ for use in AF small signal amplifiers and drivers,


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    BC183 BC213 BC183, BC183L BC213, BC213L to-92b BC184L BC214L BC184 BC183L Small Signal Amplifiers BC213L BC213 transistor BC214 BC214L PDF

    silect

    Abstract: 2S503 N4060 bc182l 2N2483 2N3707 2N3709 2N929 2N930 2S501
    Text: Silicon Transistors T ype C ase No. C o ^ <u M axim um R a tin g s at25°C amb. S P E C IA L C h a ra c te ris tic s FEATURES p <0 c a> o « O w fT h FE V CE SAT ' V CB V CE V EB V V V A M in. P.o, w Max. mA mA M in. 'c *B Max. M c/s mA mA V N PN Low Level


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    2N929 2N930 2N2483 N2484 2S501 2S502 2S503 2N3707 2N3012 TIS50 silect N4060 bc182l 2N3709 PDF

    Untitled

    Abstract: No abstract text available
    Text: S P RAG UE /S EM IC ON D GROUP =13 8 5 1 40 19 SPRAGUE. ÔS13ÔSD D DOOBSTB S E M I C O N D S / ICS Q 93D 03593 J /7~ T - 3 - 1 - ¿io PLASTIC-CASE BIPOLAR TRANSISTORS NPN Transistors ‘D’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C *CBO Device


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    D33D26 D33D27 D33D29 D33D30 513fl50 O-226AA/STYLE PDF

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


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    TRANSISTOR BC337 SMD

    Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
    Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices


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    MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139 PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2sc 9015

    Abstract: 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a
    Text: BC BC BC BC BC 132 153 154 167 168 107 108 109 113 114 Z Z Z Z Z Z Z -0 -0 z Z Z Z Z Z TO-106 TO-92F TO-92B TO-92F TO-92B 901-01 90101 901-01 901-01 901-01 TO-92F TO-92B TO-92F TO-92B TO-18 TO-18 TO-18 TO-18 TO-92F TO-92B 3 3 3 3 â <b <b <b cb b M IO M tO K


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    BC107 O-106 O-92B -26UNF-2A O-48D 2sc 9015 2SC644 CS9015 9014n BC 945 transistor BC 945 2N4248 BC267 2SC828 2sc828a PDF

    TIS43

    Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
    Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.


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    2S301 BS9300-C-598 2S305 BS9300-C-366 2S307 2S322 CV7396 BS9300-C-396 CV7647 BS9300-C-647 TIS43 equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


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    2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    sx3704

    Abstract: BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram
    Text: rh is Booklet • • • ue to fluctuations in availability, some types of semiconductors used in Thorn products have >f necessity changed from those originally specified and quoted in service literature. This )lus the fact that some service replacements are


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    ircD376 BD234 VT854, VT855â VT854* iTT44, BZX79-C24, BZX83-C24, BZX88-C24 sx3704 BRC157 BRC-116 Germanium Diode aa143 1n4148 ITT TRANSISTOR BC147 BC107/spice model bf199 BY238 SN76226DN tungsram PDF

    capacitor 4n7 6kv

    Abstract: 230v ac 5v adapter circuit schematic fqp33n10 equivalent 230V AC primary to 12V, 2A secondary transformer 9162 1.2V regulator transformer 230v to 35v BC184L equivalent QFP33N10 zoom 505 ii schematic 555 ic is output 230v ac
    Text: Design Example Report Title 13W Power Supply using TOP242P Input: 195 – 265 VAC Specification Output: 3.3V / 428mA, 2.5V / 215mA, 5V / 985mA, 6.6V / 668mA, 12V / 55mA Application Set Top Box Author Power Integrations Applications Department Document Number


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    OP242P 428mA, 215mA, 985mA, 668mA, DER-23 EN55022) capacitor 4n7 6kv 230v ac 5v adapter circuit schematic fqp33n10 equivalent 230V AC primary to 12V, 2A secondary transformer 9162 1.2V regulator transformer 230v to 35v BC184L equivalent QFP33N10 zoom 505 ii schematic 555 ic is output 230v ac PDF

    TRANSISTORS BJT bc548

    Abstract: jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302
    Text: Small Signal Transistor and JFET Selection Guide Small Signal Transistor and JFET Selection Guide Analog Discrete Interface & Logic Optoelectronics August 2002 Across the board. Around the world. Small Signal Transistor and JFET Selection Guide August 2002


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    OT-623F OT-323 OT-23 OT-89 OT-223 O-92S O-226AE O-92L TRANSISTORS BJT bc548 jfet selection guide J210 D2 PAK PN4302 TN2102A BJT BC546 FJN965 MPF102 JFET data sheet KSP13 ks3302 PDF