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    BC237 TRANSISTOR Search Results

    BC237 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BC237 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC237

    Abstract: transistor bc237 BC238 NPN transistor transistor 239 BC238 transistor BC238 transistor bc237 bc337 BC239 NPN transistor bc237 transistor BC238 datasheet
    Text: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237 BC238/239 Emitter-Base Voltage


    Original     		BC237/238/239 BC239 BC237 BC238/239 BC237 transistor bc237 BC238 NPN transistor transistor 239 BC238 transistor BC238 transistor bc237 bc337 BC239 NPN transistor bc237 transistor BC238 datasheet PDF

    BC237

    Abstract: transistor bc238 AN 239 IC BC238 datasheet BC239 transistor 239
    Text: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC239 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC237 : BC238/239 Collector-Emitter Voltage : BC237 : BC238/239


    Original     		BC237/238/239 BC239 BC237 BC238/239 BC237 transistor bc238 AN 239 IC BC238 datasheet BC239 transistor 239 PDF

    BC238

    Abstract: transistor bc237 bc337 BC237 BC239 transistor bc238 Transistor bc239 BC238 NPN transistor
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237


    OCR Scan     		BC237/238/239 BC239 BC237 BC238/239 BC238 transistor bc237 bc337 BC237 BC239 transistor bc238 Transistor bc239 BC238 NPN transistor PDF

    bc238

    Abstract: S 239 P bc237
    Text: BC237/238/239 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC239 A B S O LU T E MAXIMUM RATINGS TA-2 5 t: C h aracte ristic Rating Sym b o l Collector-Emitter Voltage :BC237 BC238/239 Collector-Emitter Voltage :BC237


    OCR Scan     		BC237/238/239 BC239 BC237 BC238/239 BC237 bc238 S 239 P PDF

    BC237B

    Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B
    Text: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range


    Original     		BC237/238/239 BC237 BC238/239 100mA 100mA BC237B transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B PDF

    TRANSISTOR BC 239 F

    Abstract: transistor BC 238
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS T O -92 • LO W N OISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC237 : BC 238/239 C ollector-E m itter Voltage : BC237


    OCR Scan     		BC237/238/239 BC239 BC237 TRANSISTOR BC 239 F transistor BC 238 PDF

    TRANSISTOR 237b

    Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


    Original     		BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237 PDF

    TRANSISTOR 237b

    Abstract: BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


    Original     		BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC239 NPN transistor BC238 NPN transistor cross reference bc237 BC239CTA transistor BC 458 BC237 transistor bc 238 b PDF

    BC238

    Abstract: BC237 SAT1000 BC238 datasheet BC239
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


    Original     		BC237/238/239 BC239 BC237 BC238/239 BC238 BC237 SAT1000 BC238 datasheet BC239 PDF

    BC237

    Abstract: BC238 bc2378 transistor bc237 bc337 BC239 transistor bc238 bc237 transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC237/8/9 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC237 V ceo=45V. • Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (V Ce =6V, Ic=0.1mA, f=lkHz).


    OCR Scan     		BC237/8/9 BC237 BC239 BC307/308/309. BC238 BC239 BC238 bc2378 transistor bc237 bc337 transistor bc238 bc237 transistor PDF

    BC237B

    Abstract: bc239c transistor bc237 bc337 transistors BC23 bc237 bc237bg AYWW marking code IC DATASHEET Transistor BC239c BC239 NPN transistor download datasheet BC239C equivalent
    Text: BC237, BC237B, BC237C, BC239C Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* 2 BASE MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC237 BC239 Collector −Emitter Voltage


    Original     		BC237, BC237B, BC237C, BC239C BC237 BC239 BC237B bc239c transistor bc237 bc337 transistors BC23 bc237 bc237bg AYWW marking code IC DATASHEET Transistor BC239c BC239 NPN transistor download datasheet BC239C equivalent PDF

    bc237

    Abstract: bc238 bc239 BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A
    Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC237 VCEO=45V. Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz). N E K


    Original     		BC237/8/9 BC239 BC307/308/309. BC237 BC238 BC237 BC23age BC237 complementary TRANSISTOR bc238 BC307 transistor bc239 120120A PDF

    bc237v

    Abstract: bc238 BC237
    Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0


    Original     		BC237 BC238 BC239 BC238B BC239C 226AA) bc237v PDF

    BC239C

    Abstract: BC237 BC238B DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239
    Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0


    Original     		BC237 BC238B BC239C BC237 BC238 BC239 r14525 BC237/D BC239C DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239 PDF

    BC237

    Abstract: BC237 complementary bc238 bc239 BC307
    Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC237 VCEO=45V. ・Low Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).


    Original     		BC237/8/9 BC239 BC307/308/309. BC237 BC238 BC237 complementary BC307 PDF

    BC237

    Abstract: bc238 BC239C BC238B bc237v
    Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector −Emitter Voltage VCEO 45 25 25 Vdc Collector −Emitter Voltage VCES 50 30 30 Vdc Emitter −Base Voltage VEBO


    Original     		BC237 BC238 BC239 BC238B BC239C O-226AA) BC239C bc237v PDF

    transistor bc237 bc337

    Abstract: BC238 NPN transistor download datasheet BC238 BC238 datasheet BC237 transistor bc237 transistor bc238 BC239 BC239 NPN transistor download datasheet bc238 equivalent
    Text: SEMICONDUCTOR BC237/8/9 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC237 VCEO=45V. ᴌLow Noise : BC239 NF=0.2dB Typ. , 3dB(Max.) (VCE=6V, IC=0.1mA, f=1kHz).


    Original     		BC237/8/9 BC237 BC239 BC307/308/309. BC237 BC238 BC239 transistor bc237 bc337 BC238 NPN transistor download datasheet BC238 BC238 datasheet transistor bc237 transistor bc238 BC239 NPN transistor download datasheet bc238 equivalent PDF

    BC237

    Abstract: BC238 datasheet BC239
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


    Original     		BC237/238/239 BC239 BC237 BC238/239 BC237 BC238 datasheet BC239 PDF

    bc237

    Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
    Text: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage


    Original     		BC237/238/239 BC237 BC238/239 BC238 BC239 100MHz BC237B bc237a bc237c 238B 238c PDF

    BC173

    Abstract: BC171 BC174 bc172 BC238 BC239 BC238 h parameter transistor bc171 transistor bc237 bc337 BC237
    Text: BC171 . . BC237 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications The transistors are subdivided into three groups, A, B an C according to their current gain. Types BC171, BC174 and BC237 are available in groups A and B, types BC172 and


    OCR Scan     		BC171 BC237 BC171, BC174 BC237 BC172 BC238 BC173 BC239 BC171 BC238 h parameter transistor bc171 transistor bc237 bc337 PDF

    BC237

    Abstract: BC238 datasheet BC239 BC239 NPN transistor
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


    Original     		BC237/238/239 BC239 BC237 BC238/239 BC237 BC238 datasheet BC239 BC239 NPN transistor PDF

    BC238 NPN transistor

    Abstract: BC237
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC237/238/239 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 . LOW NOISE: BC239 ABSOLUTE MAXIMUM RATINGS TA=25°C Characteristic Symbol C ollector-E m itter Voltage Rating Unit V V V ceS : BC237 : BC238/239 C ollector-E m itter Voltage


    OCR Scan     		BC237/238/239 BC239 BC237 BC238/239 BC238 NPN transistor BC237 PDF

    bc238 equivalent

    Abstract: BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC237 BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC237,A,B,C NPN Silicon BC238B,C BC239,C COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC237 BC238 BC239 Unit Collector – Emitter Voltage VCEO 45 25 25 Vdc Collector – Emitter Voltage


    Original     		BC237 BC238B BC239 BC238 226AA) Re218A MSC1621T1 MSC2404 bc238 equivalent BC237 equivalent bc237 equivalent transistor bc237c equivalent NPN Transistor BC238B equivalent BC238 h parameter bc237 pin lay-out BC237 sot23 bc237v PDF

    bc238

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1 3. EMITTER A BC237 50V BC238/239 30V Operating and storage junction temperature range


    Original     		BC237/238/239 BC237 BC238/239 BC238/itter 100mA 100mA 100MHz BC238 bc238 PDF