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    BC237A TRANSISTOR Search Results

    BC237A TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BC237A TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: BC237A Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)15n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).60 @I(C) (A) (Test Condition)100m


    Original     		BC237A Freq150M PDF

    Transistor BC239c

    Abstract: BC239 BC237B TRANSISTOR BC237a BC237 BC238 datasheet transistor bc237 bc337 transistor bc238 BC237A BC238
    Text: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g


    Original     		BC237. BC237 BC238 BC239C 200Hz BC239 BC238 Transistor BC239c BC239 BC237B TRANSISTOR BC237a BC237 BC238 datasheet transistor bc237 bc337 transistor bc238 BC237A PDF

    BC237

    Abstract: 238B transistor 238B BC238 bc237b TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c BC238 DATASHEET transistor bc237 bc337
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		BC237/238/239 BC237 BC238/239 -55-1V 100MHz 100mA BC237B/238B BC237 238B transistor 238B BC238 bc237b TRANSISTOR bc237b BC237A transistor TRANSISTOR bc237c BC238 DATASHEET transistor bc237 bc337 PDF

    238b

    Abstract: BC238 transistor 238B BC239 BC238 NPN transistor bc237b transistor bc237 bc337 transistor bc239C BC239C BC237
    Text: BC237.239 NPN Silicon Amplifier Transistors The transistor is subdivided into three groups, A, B, and C, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations TO-92 Plastic Package Weight approx. 0.19g


    Original     		BC237. BC237 BC238 BC239C 200Hz BC239 BC238 238b transistor 238B BC239 BC238 NPN transistor bc237b transistor bc237 bc337 transistor bc239C BC239C BC237 PDF

    BC237B

    Abstract: transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B
    Text: BC237/238/239 BC237/238/239 TRANSISTOR NPN FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TO-92 0.35 W (Tamb=25℃) 1. COLLECTOR 0.1 A 2. BASE 3. EMITTER BC237 50V BC238/239 30V Operating and storage junction temperature range


    Original     		BC237/238/239 BC237 BC238/239 100mA 100mA BC237B transistor 238B TRANSISTOR bc237c BC237 238C BC237A transistor TRANSISTOR BC237b transistor bc237 bc337 BC238 238B PDF

    transistor 238B

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1


    Original     		BC237/238/239 BC237 BC238/239 100mA 100mA 100MHz BC238 BC239 transistor 238B PDF

    bc238

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. COLLECTOR PCM: 0.35 W (Tamb=25℃) 2. BASE Collector current ICM: Collector-base voltage V(BR)CBO: 0.1 3. EMITTER A BC237 50V BC238/239 30V Operating and storage junction temperature range


    Original     		BC237/238/239 BC237 BC238/239 BC238/itter 100mA 100mA 100MHz BC238 bc238 PDF

    bc237

    Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
    Text: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage


    Original     		BC237/238/239 BC237 BC238/239 BC238 BC239 100MHz BC237B bc237a bc237c 238B 238c PDF

    BC237

    Abstract: BC238 bc237b 238C BC237A TRANSISTOR bc237c transistor bc237 TRANSISTOR bc237b BC239
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.haorm.cn BC237/238/239 TRANSISTOR NPN TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR 2. BASE 3. EMITTER 1 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		BC237/238/239 BC237 BC238/239 100MHz 100mA BC237B/238B BC237 BC238 bc237b 238C BC237A TRANSISTOR bc237c transistor bc237 TRANSISTOR bc237b BC239 PDF

    bc237v

    Abstract: bc238 BC237
    Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0


    Original     		BC237 BC238 BC239 BC238B BC239C 226AA) bc237v PDF

    BC238BC

    Abstract: bc237a BC238B
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon EMITTER MAXIMUM RATINGS Symbol BC237 BC238 BC239 Unit C ollector-E m itter Voltage VCEO 45 25 25 Vdc C ollector-E m itter Voltage VCES 50 30 30 Vdc V EBO


    OCR Scan     		BC237 BC238B BC239 BC238 BC238BC bc237a PDF

    BC237

    Abstract: bc238 BC239C BC238B bc237v
    Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector −Emitter Voltage VCEO 45 25 25 Vdc Collector −Emitter Voltage VCES 50 30 30 Vdc Emitter −Base Voltage VEBO


    Original     		BC237 BC238 BC239 BC238B BC239C O-226AA) BC239C bc237v PDF

    BC239C

    Abstract: BC237 BC238B DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239
    Text: ON Semiconductort BC237,A,B,C BC238B,C BC239C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0


    Original     		BC237 BC238B BC239C BC237 BC238 BC239 r14525 BC237/D BC239C DATASHEET Transistor BC239c 238b BC238 datasheet BC239C equivalent BC237A BC238 BC239 PDF

    BC237

    Abstract: BC238B BC238 datasheet BC238B npn Bc238B, NPN BC239 NPN transistor download datasheet BC237A BC238 BC239 BC237B/2388/2398
    Text: BC237,A,B,C BC238B,C BC239,C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC237 BC238 BC239 Unit Collector–Emitter Voltage VCEO 45 25 25 Vdc Collector–Emitter Voltage VCES 50 30 30 Vdc Emitter–Base Voltage VEBO 6.0 5.0 5.0 Vdc Collector Current — Continuous


    Original     		BC237 BC238B BC239 BC237 BC238 BC239 r14525 BC237/D BC238 datasheet BC238B npn Bc238B, NPN BC239 NPN transistor download datasheet BC237A BC238 BC237B/2388/2398 PDF

    BC 2388

    Abstract: BC739 BC236 BC237B 239b BC237A BC231 bc2376 06008v BC238
    Text: ^ BC237 BC238 BC239 OßtCf MAXIMUM RATINGS R*l»r»V Symbol Collector-Emitter Voltage BC BC BC 237 231 239 Unit v e to 45 25 25 Vdc Collector Emitter Voltage VCfS 50 30 30 Vdc £»ni»t<r-8i*e Voltage v i9 0 6 0 SO 5.0 Vdc Collector Current - Continuous 100


    OCR Scan     		BC237 BC238 BC239 O-226AA) BC237B/238B/239B BC737C/238C/239C BC237A/238A BC737C/23EC/239C BC237A BC 2388 BC739 BC236 BC237B 239b BC231 bc2376 06008v PDF

    BC238B

    Abstract: BC239 BC237A BC238 BC237 bc237v
    Text: MOTOROLA Order this document by BC237/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors BC237,A,B,C BC238B,C BC239,C NPN Silicon COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating C o lle c to r-E m itte r Voltage Symbol BC 237 BC 238 BC 239 Unit VCEO 45 25 25


    OCR Scan     		BC237/D BC237 BC238B BC239 O-226AA) BC237A BC238 bc237v PDF

    TRANSISTOR 237b

    Abstract: BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237
    Text: BC237/238/239 BC237/238/239 Switching and Amplifier Applications • Low Noise: BC239 TO-92 1 NPN Epitaxial Silicon Transistor 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES Collector-Emitter Voltage Parameter


    Original     		BC237/238/239 BC239 BC237 BC238/239 TRANSISTOR 237b BC237 237B TRANSISTOR BC237CTA BC238 bc237a 2bc237 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC237,A,B,C BC238,B,C BC239,C M AXIM U M R A T IN G S R atin g Sym b ol BC BC BC 2 3 7 2 3 8 2 39 Unit Collector-Em itter Voltage VCEO 45 25 25 Vdc Collector-Em itter Voltage VCES 50 30 30 Vdc Em itter-Base Voltage vebo 6.0 5.0 5.0 Vdc Collector Current - Continuous


    OCR Scan     		BC237 BC238 BC239 O-226AA) PDF

    BC337-16-5

    Abstract: BC207 BC208B BC209C BC237 BC237A BC237B BC237C BC238 BC238B
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1


    OCR Scan     		BC207 BC208B O-92-4 BC209C BC237 BC319 BC320 BC32QA BC320B BC337-16-5 BC237A BC237B BC237C BC238 BC238B PDF

    BC183A

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Electrical C haracteristics IT;) -.2 5 C. Unless O therw ise S pecified) Maxim um Ratings i I i ! ^ HI ^EBO (V) Min (V) Min (V) Min 60 50 6 #BC182 ^CBO Pd (W) (A) @Tc=25'c 0.35 0.1 (pA) Max 0.015 V C!I @ 00 *CES (pA)


    OCR Scan     		BC182 BC182A BC182B BC183 BC183A BC183B BC183C BC184 KBC184B BC184C BC183A PDF

    Bc23b

    Abstract: BC207 BC337-16-5 BC237-5 BC320 BC208B BC209C BC237 BC237A BC237B
    Text: TO-92 Plastic Package Transistors NPN Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. V EBO *CBO ^CB (V) (W) (|iA) @ (V) Min 8Tc=25°c 0.625 45 BC207 50 BC208B 25 (A) 0.015 @ ^CE(SAT) (mA) 0 (V ) Min Max Max 0.1


    OCR Scan     		BC207 BC208B O-92-4 BC209C BC237 BC319 BC320 BC32QA BC320B Bc23b BC337-16-5 BC237-5 BC237A BC237B PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. BC207 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CBO ^CEO ^EBO (V) Min (V) Min (V) Min Pd 'c (W) W @Tc=25°c SO 45 5 0.625 0.1 ‘CBO V CB w ï(V ) Max 'c e s m ^ce


    OCR Scan     		BC207 BC208B BC237 BC320A BC320B BC337 BC337-16 O-92-4 PDF

    SL 100 NPN Transistor

    Abstract: bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor
    Text: SPRAGUE SILICON TRANSISTOR AND DIODE CHIPS POPULAR TRANSISTOR AND DIODE CHIPS ELECTRICAL CHARACTERISTICS 100% Probed Parameters BVcbo TYPE D ESCRIPTIO N Min. Volts lc @ (mA) BVceo Min. Ic V o lts @ (mA) BVeëq Min. lc Volts @ (mA) Min. Max. lc (mA) .01 tlfE


    OCR Scan     		THC-2484 THC-4123 THC-4124 THC-4125 THC-4126 THC-40D4 THC-40D5 THC-41D4 THC-41D5 SL 100 NPN Transistor bc337-40 npn transistor transistor TE 901 Transistor BC239c SL 100 power transistor of transistor sl 100 Transistor BC413C TRANSISTOR SL 100 te 901 pnp Transistor sl 100 transistor PDF

    BC238B npn

    Abstract: BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C
    Text: S P R AGUE EconolineR Plast ic-M old ed Silicon S E P T R Transistors SMALL-SIGNAL AMPLIFIERS PRO-ELECTRON SERIES >- Pd BC Ta = 25°C V(BR) V(BR) V(BR) Conditions C BO CEO E BO Ic Q. (mW) Vo lts V olts Vo lts (m A) BC182A NPN 300 60 50 6 2 5 120 BC182B NPN


    OCR Scan     		BC182A BC182B BC212A EC212B BC237A BC237B BC238A BC168A BC168B BC168C BC238B npn BC337-25 BC415A CBE BC238B Bc238B, NPN BC337 CBE BC307A BC414B BC337-25 CBE BC238C PDF