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    BC257 TRANSISTOR Search Results

    BC257 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BC257 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    bc1078

    Abstract: BC317 BC167 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A
    Text: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


    OCR Scan     		BC107 BC167 BC237 BC317 BC107, BC167, BC257, BC237, BC307, BC317, bc1078 BC1O7 BCI69 BC168 bc108 cbe BC257 bc2378 T0-92A PDF

    BC167

    Abstract: BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168
    Text: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 CRO THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


    OCR Scan     		BC107, BC177, BC167, BC257, BC237, BC307, BC317, BC320, O-92B O-92F, BC167 BC107 CE amplifier BC1O7 BC237 complementary hFE Group BC169 bc107 bc168 PDF

    BC519

    Abstract: fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC107 BC237 complementary BC238
    Text: BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


    OCR Scan     		BC107, BC177, BC167, BC257, BC237, BC307, BC317, BC320, bc107 T0-92B BC519 fbc237 BC317 BC167 bc107-108-109 BC313 BC320 BC237 complementary BC238 PDF

    BC257

    Abstract: BC320 BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC177 BC178
    Text: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.


    OCR Scan     		BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC307, BC237, BC320, BC107 transistor BC257 BO307 BC237 BC317 YC 322 BC178 PDF

    BC238 h parameter

    Abstract: bc313 BC167 BC231 BC317 BC107 bc101 BC168 BC320 30Hz-15kHz
    Text: CRO BC107,8,9 BC167,8,9 BC237,8,9 BC317,8,9 THE ABOVE TYPES ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC107, 8, 9 are complementary to BC177, 8, 9. BC167, 8, 9 are complementary to BC257, 8, 9.


    OCR Scan     		BC107 BC167 BC237 BC317 BC107, BC177, BC167, BC257, BC237, BC307, BC238 h parameter bc313 BC231 bc101 BC168 BC320 30Hz-15kHz PDF

    bc177

    Abstract: BC257
    Text: CRO BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9. BC257, 8, 9 are complementary to BC167, 8, 9.


    OCR Scan     		BC177, BC107, BC257, BC167, BC307, BC237, BC320, BC317, O-92B O-92F bc177 BC257 PDF

    BC182 BC547

    Abstract: bc557 TO92C
    Text: Transistors For complete package outlines, refer to pages PO-1 through PO-6 General Purpose and Switching Type M axim um Ratings VCBO '< N=NPN P=PNP BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC257 BC258 BC259 BC307 BC308 BC309 BC327 BC328


    OCR Scan     		BC167 BC168 BC169 BC182 BC183 BC212 BC213 BC237 BC238 BC239 BC182 BC547 bc557 TO92C PDF

    BC257

    Abstract: BC307 BC107 BC307 micro electronics bci77 BC177 BC178 BC179 BC237 BC258
    Text: BC 177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 / o o er o LU LU THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9 BC257, 8, 9 are complementary to BC167, 8, 9


    OCR Scan     		BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC307, BC237, BC320, BC107 BC307 micro electronics bci77 BC178 BC179 BC237 BC258 PDF

    EM 257

    Abstract: BC257 bc257 siemens BC257B BC258 A235L TR BC BC258A BC258B siemens 1q
    Text: SIE D SIEMENS • öE3SbGS GDMlSHfi 425 H S I E 6 SIEMENS AKTIENGESELLSCHAF T - 2 S \- Z \ PNP Silicon AF Transistors BC 257 . BC 259 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 167, BC 168, BC 1 6 9 NPN


    OCR Scan     		853SbDS Q62702-C700 Q62702-C184 Q62702-C206 Q62702-C701 Q62702-C187 Q62702-C188 Q62702-C438 Q62702-C702 Q62702-C192 EM 257 BC257 bc257 siemens BC257B BC258 A235L TR BC BC258A BC258B siemens 1q PDF

    BC177

    Abstract: BC257 BC520 bc1778 bc258 BC317 BC321 BC320 bc3078 BC107
    Text: BC177,8,9 BC257,8,9 BC307,8,9 BC320,1,2 KmmoGtgfimoMNHwoMMwmNwmNmomMMwmmmoooHMígetMemmm^^ THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS. BC177, 8, 9 are complementary to BC107, 8, 9.


    OCR Scan     		BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC307, BC237, BC320, BC520 bc1778 bc258 BC317 BC321 bc3078 BC107 PDF

    bc322

    Abstract: No abstract text available
    Text: , One. BC177,8,9 BC257,8,9 .BC307,8,9 BC320,1,2 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 THE ABOVE TYPES ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF SMALL SIGNAL AMPLIFIER STAGES AND DIRECT COUPLED CIRCUITS,


    Original     		BC177 BC257 BC307 BC320 BC177, BC107, BC257, BC167, BC307, BC237, bc322 PDF

    bc257b

    Abstract: No abstract text available
    Text: SPRAGUE/SENICOND I 8514019 GR O U P T3 SPRAGUE, D • 0513050 G0D3ST=] 1 ■ S E M I C O N D S / ICS 0 3 5 9 9 3> 93D PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C - Max. ^ BR CBO ^(BR)CEO V(BR)EBO


    OCR Scan     		O-226AA/STYLE bc257b PDF

    BC212L

    Abstract: No abstract text available
    Text: ALLEGRO MICROSYSTEMS INC T3 8 5 1 4 0 1 9 S P R A GU E. D • 05GM33Ö GQ035CH S E M I C O N D S / ICS ü ■ ALGR 9 3 D 0 3 5 9 9 5 PLASTIC-CASE BIPOLAR TRANSISTORS PNP Transistors Pro-Electron Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C Device


    OCR Scan     		05GM33Ö GQ035C BC212L BC212LA BC212LB BC213L BC213LA BC213LB BC213LC BC214L PDF

    BC214C

    Abstract: BC251B transistor BC257 BC213 BC213A BC213B BC213C BC214 BC214B BC251A
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. ^ceo (V) Min ^CEO ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25”C, Unless Otherwise Specified) 'c Pd (W) (A) 0Tc=25°c 'cbo v ce *CES (|iA) O (V) (MA) Max Max ^C E hFE Min 6 360 10


    OCR Scan     		BC213 O-92-4 BC213A BC213B BC213C BC256B BC214C BC251B transistor BC257 BC214 BC214B BC251A PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. ^080 (V) Min ^CEO ^EBO (V) Min (V) Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) P0 (W) (A) Tc=25“c 'eòo *C£S ^CE (UA) ®(V) (PA) ®(V) Max Max hre (mA) Min #BC213


    OCR Scan     		BC213 BC213A BC213C BC214 BC214B O-92-1 BC257B BC258 PDF

    BC213

    Abstract: BC213A BC213B BC213C BC214 BC214B BC214C BC251A BC251B BC251C
    Text: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. Po (W) (A) 0Tc=25“c 'cao ^ce 'cES ^CE (UA) 0(V> (MA) «(V) Max Max ^CEO ^EBO (V) Min (V) Min (V) Min #BC213 45 30 5 0.35 0.1


    OCR Scan     		BC213 O-92-4 BC213A BC213B BC213C O-92-4 BC257 O-92-1 BC214 BC214B BC214C BC251A BC251B BC251C PDF

    BC168

    Abstract: transistor BC257 bc167 BC169C BC257 BC169 transistor 168b BC257 TRANSISTOR BC169C equivalent BC169B equivalent
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package BC167A, BC167B, BC168A, BC168B, BC168C, BC169B, BC169C NPN SILICON PLANAR EPITAXIAL TRANSISTORS


    Original     		BC167A, BC167B, BC168A, BC168B, BC168C, BC169B, BC169C BC257, C-120 BC168 transistor BC257 bc167 BC169C BC257 BC169 transistor 168b BC257 TRANSISTOR BC169C equivalent BC169B equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: COIÎL TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd 'c (W) W @Tc=25°c 'c & (mA) @ Freq CDIL (MHz) (pF) Case Max Style @ V cbo ^CEO w Min (V) Min Min BC252C 30 25 5


    OCR Scan     		BC252C BC256 BC256A BC257 O-92-1 PDF

    2SC3875S

    Abstract: BC547 BC546 2Sc4370a 2SC3227 2sa1274 2SA1267 2SC3201 BC557 bc556 2sa1659a bc557
    Text: This Transistors Electrical Characteristics T a=25°C Applications VCEO fT (TYP) MIN (TYP) MAX VCE f ratnage Its Respective (mA) (mW) (V) (mA) (MHz) (V) (dB) (V) (KHz) 50 150 150 70^700 6 2 0.25 100 10 80 10 1 10 6 0.1 1 10 SOT-23 H 2SA1269 120 100 200


    OCR Scan     		Ta-25 2SC3875S 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 BC547 BC546 2Sc4370a 2SC3227 2sa1274 BC557 bc556 2sa1659a bc557 PDF

    2SC4370A

    Abstract: 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 2SA1267 bc557 2SA1504 BC337/BC327 2SC3202
    Text: 1 Transistors Maximum Ratings KOREA Electrical Characteristics Ta—25°C Type No NPN PNP Ic Pc (V) (mA) (mW) 150 I’fe MAX ^CE (V) Ic (mA) (V) 7 0^700 6 2 0.25 100 fT I« (mA) (MHz) (TYP) MIN ^CE (V) NF IC (mA) (TYP) MAX (dB) VCE (V) •c (mA) f (KHz)


    OCR Scan     		2SC387SS 2SA1S04S OT-23 2SC3201 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2SC4370A 2SC3875S 2SA1504S 2SC3227 BC548 ,BC558 bc557 2SA1504 BC337/BC327 2SC3202 PDF

    2Sc4370a

    Abstract: 2SC3227 BC548 ,BC558 2sa1267 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan     		2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2Sc4370a 2SC3227 BC548 ,BC558 BC337/BC327 2sa1270 bc546 bc556 BC547 sot package sot-23 2SC3200 2SC3202 PDF

    2sc3227

    Abstract: 2SA1267 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 2SC3199 KTC9014
    Text: 1 Transistors Maximum Ratings Electrical Characteristics Ta—25°C Type No Ic Pc (V) (mA) (mW) 50 150 150 ^CE Ic (V) (mA) (V) 70^700 6 2 0.25 MAX fT I« (TYP) M IN NF (TYP) MAX VCE •c (dB) (V) (mA) f (KHz) Rg (KQ) 1 10 6 0.1 1 10 SO T-23 H 6 0.1 1 10


    OCR Scan     		2SC387SS 2SA1S04S OT-23 2SC320I 2SA1269 O-92M 2SC3199 2SA1267 2SC3198A 2sc3227 2Sc4370a BC548 ,BC558 BC337/BC327 bc557 2sc3202 2sa1270 KTC9014 PDF

    2SC3133 cross reference

    Abstract: Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288
    Text: CROSS REFERENCE GUIDE TRANSISTORS TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG TYPE MAKER SAMSUNG 2N 3903 M O TO RO LA 2N 3903 2SA1052 KSA812 2SA1298 T O S H IB A KSA1298 2N 3904 M O TO RO LA 2N 3904 2SA1072A FUJITSU KSA1050 2SA1299 M ITS UB ISH I KSA1174 2N 3905


    OCR Scan     		2N4401 2N5401 2N5551 2SA1004 2SA1010 2SA1013 2SA1015 2SA1016 2SA1017 2SA1019 2SC3133 cross reference Hitachi 2sc281 NEC D882 A564A D1163A 2sC1815 cross reference a628a krc1211 KRA2203 NEC D288 PDF

    transistor 2N3563

    Abstract: 2n3819 cross reference 2SK30 2SA726 2sk41e 2SC1026 transistor 2sc1417 2Sa1026 2SC2259 BC150 transistor
    Text: Section 1 Cross Reference Guide . 1-3 Process Selection Guides Preferred Part Numbers by Process .


    Original     		PDF