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    BC30 Search Results

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    BC30S04 Amphenol Communications Solutions Spring Battery Connector,SMT,1.60mm pitch 4 positions, 15u\\ Au LCP Black, Reel Visit Amphenol Communications Solutions
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    BC30 Price and Stock

    Abracon Corporation AWSCR-3.68CPLB-C30-T4

    CERAMIC RES 3.6800MHZ 30PF SMD
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    DigiKey AWSCR-3.68CPLB-C30-T4 Cut Tape 4,781 1
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    Abracon Corporation AWSCR-7.37CPLB-C30-T4

    CERAMIC RES 7.3700MHZ 30PF SMD
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    Eaton Bussmann BK-ABC-30-R

    FUSE CERM 30A 250VAC 125VDC 3AB
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    TME BK-ABC-30-R 66 1
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    Melexis Microelectronic Integrated Systems MLX90374GDC-ABC-300-SP

    IC SENSOR HALL 8SOIC
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    Bel Power Solutions MBC300-1T24G-2

    AC/DC CONVERTER 24V 200/300W
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    BC30 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC30 L-Com ADAPTR BNC M/DUAL BANANA PLUGS Original PDF
    BC300 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    BC300 Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original PDF
    BC300 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    BC300 Micro Electronics NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES Scan PDF
    BC300 Micro Electronics Semiconductor Devices Scan PDF
    BC300 Micro Electronics Misc. Data Book Scans 1975/76 Scan PDF
    BC300 Micro Electronics Semiconductor Device Data Book Scan PDF
    BC300 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    BC300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BC300 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BC300 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BC300 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    BC300 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    BC300 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BC300 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    BC300 Unknown Catalog Scans - Shortform Datasheet Scan PDF
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    BC307

    Abstract: No abstract text available
    Text: DC COMPONENTS CO., LTD. BC307 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. TO-92 Pinning .190 4.83 .170(4.33) 1 = Collector 2 = Base 3 = Emitter


    Original     		PDF BC307 -100mA, -10mA, 200Hz 50MHz BC307

    BC308

    Abstract: KBC308 Grade
    Text: SEMICONDUCTOR BC308 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking No. 1998. 6. 23 816 K 1 2 3 B BC308 2. Marking 4 Item Marking Description Device Name BC308 BC308 Lot No. 816 8 Year 0~9 : 2000~2009 16 Week 16 : 16th Week KEC K KEC CORP.


    Original     		PDF BC308 BC308 KBC308 Grade

    BC304-6

    Abstract: No abstract text available
    Text: BC304-6 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016)


    Original     		PDF BC304-6 O205AD) 1-Aug-02 BC304-6

    BC300

    Abstract: 120M
    Text: BC300 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BC300 O205AD) 1-Aug-02 BC300 120M

    BC300-4

    Abstract: 120M BC300
    Text: BC300-4 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF BC300-4 O205AD) 1-Aug-02 BC300-4 120M BC300

    bc307

    Abstract: BC309 BC308
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors BC307/308/309 TRANSISTOR PNP TO-92 FEATURES Amplifier dissipation NPN Silicon 1. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. BASE Symbol Parameter


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, bc307 BC309 BC308

    BC302-5

    Abstract: 120M BC302
    Text: BC302-5 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016)


    Original     		PDF BC302-5 O205AD) 1-Aug-02 BC302-5 120M BC302

    120M

    Abstract: BC300-6
    Text: BC300-6 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 80V 0.41 (0.016)


    Original     		PDF BC300-6 O205AD) 1-Aug-02 120M BC300-6

    BC307B

    Abstract: BC307 BC307C 308C BC308 BC308C
    Text: BC307… BC308 PNP Silicon Amplifier Transistors On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta=25oC Symbol BC307B,C BC308C Unit Collector Emitter Voltage


    Original     		PDF BC307. BC308 BC307B BC308C BC307 100MHz 200Hz BC307C 308C BC308 BC308C

    Untitled

    Abstract: No abstract text available
    Text: BC300R - Power Supply/Battery Enclosure Rev.฀BC300R฀-฀04162013 Specifications: •฀ . •฀ Fits฀two฀ 2 ฀12VDC/7AH฀batteries. •฀ Product฀weight:฀฀5.6฀lbs.฀(2.54฀kg).


    Original     		PDF BC300R DSBC300Rà 12VDC/7AHà BC300R 123mm) 318mm) 279mm)

    Untitled

    Abstract: No abstract text available
    Text: BC300 - Power Supply/Battery Enclosure Rev.฀BC300฀-฀04162013 Specifications: •฀ . •฀ Fits฀two฀ 2 ฀12VDC/7AH฀batteries. •฀ Product฀weight:฀฀5.6฀lbs.฀(2.54฀kg).


    Original     		PDF BC300 DSBC300à 12VDC/7AHà BC300 123mm) 318mm) 279mm)

    bc307

    Abstract: BC308 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		PDF BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 complementary

    BC307B

    Abstract: BC307
    Text: BC307B, BC307C Amplifier Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO –45 Vdc Collector-Base Voltage VCBO –50 Vdc Emitter-Base Voltage VEBO –5.0 Vdc Collector Current — Continuous


    Original     		PDF BC307B, BC307C BC307B BC307

    BC303

    Abstract: transistor bc303 BC304
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer PNP EXPITAXIAL PLANAR SILICON TRANSISTORS BC303, BC304 TO-39 Metal Can Package PNP SILICON LOW-AND MEDIUM POWER TRANSISTORS. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise


    Original     		PDF BC303, BC304 BC303 C-120 304Rev300701 BC303 transistor bc303 BC304

    2SA708 NEC

    Abstract: MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 D29E9 D29E9 TP5821 BCW93A BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L BC361-10 BC432 BC1Sl-l0 BC303-5 BC303-5 BC303-5 2N2591 BCW97A 2N4032 2NS223 ~~~~ 25 30 35 40 BFT70 BFT80 BFT80 2N4028 MPS751 2N2S03


    Original     		PDF D29E9 TP5821 BCW93A 2SA560 BC488 BC488-18 BC488-5 BC488L 2SA708 NEC MMST8598 150JJ BCW93B motorola BC361-10 LOW-POWER SILICON PNP BC488A 6u sot-23 2SA1283C

    bc307

    Abstract: BC308
    Text: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous


    Original     		PDF BC307/308/309 BC307 BC308/309 -10mA, -100mA, BC308

    Untitled

    Abstract: No abstract text available
    Text: BC302 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 45V 0.41 (0.016) 0.53 (0.021)


    Original     		PDF BC302 O205AD) 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: BC303-5 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 60V 0.41 (0.016)


    Original     		PDF BC303-5 O205AD) 19-Jun-02

    BC557 pnp transistor

    Abstract: BC551 BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A
    Text: T092 PLASTIC PACKAGE TRANSISTORS PNP Typ» No. VC80 (V) Min 50 BC307B {Ta=25°C, U n le s s O th e rw is e S p e c ifie d ) E le c tric a l C h a ra c te ristic s M a x im u m R a tin g s VCEO VEBO lC0O (V) Min (V) Min (uA) Max hFE ^ce (VI 45 lc & (mAl


    OCR Scan     		PDF BC307B O-92-4 BC327 BC327-10 BC327-16 BC560B BC557 pnp transistor BC551 BC327-25 BC327-40 BC557 BC557A

    pin configuration Bc327

    Abstract: BC307B BC327 BC327-10 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C
    Text: — CONTINENTAL DEVICE INDIA L.3E D • GG00124 S72 M C D I L TO-92 PLASTIC PACKAGE TRANSISTORS PNP Type No. BC307B (Ta=25°C, Unless Otherwise Specified) Electrical Characteristics Maximum Ratings VC80 VCEO V EBO 'CBO (V) Min (V) Min 00 Min (UA) Max 50


    OCR Scan     		PDF GG00124 BC307B O-92-4 BC327 BC327-10 pin configuration Bc327 BC327-16 BC327-25 BC327-40 BC557 BC557A BC557C

    T BC309

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 T BC309

    BC307B

    Abstract: BC306C BC307C BC307 BC308C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC307 BC307B BC307C BC308C Amplifier Transistors PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Collector- Emitter Voltage Collector-Base Voltage Symbol BC307, B, C BC306C Unit VCEO -45 -25 Vdc VCBO -50 -30 Vdc


    OCR Scan     		PDF BC307, BC306C BC307 BC307B BC307C BC308C O-226AA) b3b7255 BC308C

    BC307

    Abstract: No abstract text available
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9


    OCR Scan     		PDF BC307/308/309 BC309 BC307 BC308/309 BC307

    BC307

    Abstract: No abstract text available
    Text: Transistors BC307 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS TO-92 • LOW NOISE ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Collector-Emitter Voltage Unit Rating Symbol Characteristic VcES Collector-Emitter Voltage -5 0 V -4 5 V -5 -1 0 0 500 150 —5 5 ~ 1 5 0


    OCR Scan     		PDF BC307 -10/JA, -10mA, 100mA, BC307