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    BC307 PNP Search Results

    BC307 PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1943 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L) Visit Toshiba Electronic Devices & Storage Corporation
    TTA012 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTA004B Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N Visit Toshiba Electronic Devices & Storage Corporation
    TTA2070 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-1 A / hFE=200~500 / VCE(sat)=-0.20V / tf=90 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BC307 PNP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC557AP

    Abstract: BC327-5 BC557VI BC557 sot-23 BCX71RG BC307A ME0412 LOW-POWER SILICON PNP
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 BCX17 BCX17R BC327 BC327-18 BC327-5 BCS07-16 BCW35 BCW37 BCW68R BCW68 BCW68 BCW68F BCX76 BC486A BC486L18 BC486L5 BCS60A BC557VI BC557VI BCW69 BC307 BC307-18 BC307-5 BC307A BC307A18 BC307A5 BC557AP


    Original     		BCX17 BCX17R BC327 BC327-18 BC327-5 BCS07-16 BCW35 BCW37 BCW68R BCW68 BC557AP BC557VI BC557 sot-23 BCX71RG BC307A ME0412 LOW-POWER SILICON PNP PDF

    BC307

    Abstract: bc307 pnp BC238 datasheet BC239 transistor 309 BC309
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • LOW NOISE: BC309 TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector-Emitter Voltage : BC307 : BC308/309 Collector-Emitter Voltage : BC307 : BC308/309


    Original     		BC307/308/309 BC309 BC307 BC308/309 BC307 bc307 pnp BC238 datasheet BC239 transistor 309 BC309 PDF

    T BC309

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS . LOW NOISE: BC309 TO -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m itter Voltage : BC307 : BC308/309 C ollector-E m itter Voltage : BC307


    OCR Scan     		BC307/308/309 BC309 BC307 BC308/309 T BC309 PDF

    fr 309

    Abstract: BC307 309 T BC239 BC309
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS TO -92 • LO W NOISE: BC309 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Symbol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


    OCR Scan     		BC307/308/309 BC309 BC307 BC308/309 BC308/309 fr 309 BC307 309 T BC239 BC309 PDF

    BC307

    Abstract: No abstract text available
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS T O -9 2 • LOW NOISE: BC309 ABSOLUTE MAXIMUM RATINGS Ta=25°C Symbol Characteristic Collector-Emitter Voltage :BC307 :BC308/309 Collector-Emitter Voltage :BC307 B C 3 0 8 /3 0 9


    OCR Scan     		BC307/308/309 BC309 BC307 BC308/309 BC307 PDF

    bc307

    Abstract: BC308
    Text: BC307/308/309 PNP TO-92 Bipolar Transistors TO-92 1. COLLECTOR 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value IC BC307 BC308/309 Emitter-Base Voltage BC307 BC308/309 Collector Current -Continuous


    Original     		BC307/308/309 BC307 BC308/309 -10mA, -100mA, BC308 PDF

    BC307

    Abstract: BC307B BC307C BC308C BC307 Motorola
    Text: MOTOROLA Order this document by BC307/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C


    Original     		BC307/D BC307 BC307B BC307C BC308C 226AA) BC307, BC307 BC307B BC307C BC308C BC307 Motorola PDF

    transistor bc 238 b

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON TRANSISTOR BC307/308/309 SWITCHING AND AMPLIFIER APPLICATIONS • LO W N OISE: BC309 T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-E m ltter Voltage : BC307 : BC 308/309 C ollector-E m ltter Voltage : BC307


    OCR Scan     		BC307/308/309 BC309 BC307 transistor bc 238 b PDF

    TYP 513 309

    Abstract: GE-514
    Text: BC307/308/309 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • L O W NOISE: BC309 A B S O LU T E MAXIMUM RATINGS TA= 2 5 t Sym bol C h aracte ristic Collector-Emitter Voltage :BC307 BC308/309 Collector-Emitter Voltage :BC307 BC308/309


    OCR Scan     		BC307/308/309 BC309 BC307 BC308/309 BC307 BC3Q8/309 TYP 513 309 GE-514 PDF

    BC307

    Abstract: BC308 BC309 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary
    Text: SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V Ceo= -45V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (Vce=-6V, Ic=-0.1mA, f=lkHz).


    OCR Scan     		BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 bc3078 bc307 pnp BC308 PNP transistor BC307 complementary PDF

    BC308

    Abstract: BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP
    Text: Central BC307 BC308 BC309 PNP SILICON TRANSISTOR TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR BC307, BC308, and BC309 types are PNP Silicon Transistors manufactured by the epitaxial planar process, designed for general purpose amplifier applications.


    Original     		BC307 BC308 BC309 BC307, BC308, BC309 BC307) BC3050MHz BC308 BC308B BC308 PNP transistor BC307A BC307 BC308A BC308 PNP transistor download datasheet Transistor BC307b transistor bc308 Bc308B, PNP PDF

    Characteristic curve BC107

    Abstract: TRANSISTOR 308B BC237 BC307 BC108 characteristic bc307b
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 2 BASE 3 EMITTER 1 2 3 CASE 29–04, STYLE 17 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C Unit Collector – Emitter Voltage


    Original     		BC307 BC307B BC307C BC308C 226AA) BC307, Junc218A MSC1621T1 MSC2404 Characteristic curve BC107 TRANSISTOR 308B BC237 BC108 characteristic PDF

    BC307

    Abstract: BC308 BC308 PNP transistor BC309 309 IC
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		BC307/308/309 BC309 BC307 BC308/309 BC307 BC308 BC308 PNP transistor BC309 309 IC PDF

    transistor BC 458

    Abstract: Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 BC308
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		BC307/308/309 BC309 BC307 BC308/309 BC308 BC308ABU transistor BC 458 Transistor BC 308C BC 2001 transistor BC307 BC307BTA BC237 bc309 PDF

    bc307

    Abstract: BC308 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ・High Voltage : BC307 VCEO=-45V. ・Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 complementary PDF

    bc307

    Abstract: bc308 BC309 BC308 PNP transistor transistor BC309 BC237 BC307 complementary
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A High Voltage : BC307 VCEO=-45V. Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz). N


    Original     		BC307/8/9 BC309 BC237/238/239. BC307 BC308 BC307 BC308 PNP transistor transistor BC309 BC237 BC307 complementary PDF

    BC307

    Abstract: BC308 BC309 BC308 PNP transistor
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA BC307/8/9 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. FEATURES • High Voltage : BC307 V ceo= -4 5 V . • Low Noise : BC309 NF=0.2dB Typ. , 3dB(Max.)


    OCR Scan     		BC307/8/9 BC307 BC309 BC237/238/239. BC308 BC309 BC308 BC308 PNP transistor PDF

    BC307

    Abstract: BC238 datasheet BC239 BC309 transistor bc237
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		BC307/308/309 BC309 BC307 BC308/309 BC307 BC238 datasheet BC239 BC309 transistor bc237 PDF

    bc307bta

    Abstract: BC307
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		BC307/308/309 BC309 BC307 BC308/309 BC307 bc307bta PDF

    BC308A

    Abstract: Transistor BC 308C BC307 Bc308
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		BC307/308/309 BC309 BC307 BC308/309 BC308 BC308A Transistor BC 308C BC307 PDF

    bc307b

    Abstract: bc307 BC308C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC307 BC307B BC307C BC308C PNP Silicon COLLECTOR 1 3 EMITTER MAXIMUM RATINGS Rating Symbol BC307, B, C BC308C v CEO -45 -25 Vdc Collector-Base Voltage VCBO -50 -30 Vdc Emitter-Base Voltage Collector-Emitter Voltage


    OCR Scan     		BC307 BC307B BC307C BC308C BC307, BC308C PDF

    BC307

    Abstract: BC238 datasheet BC239 BC309 308 transistor
    Text: BC307/308/309 BC307/308/309 Switching and Amplifier Applications • Low Noise: BC309 TO-92 1 1. Collector 2. Base 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCES VCEO Parameter Collector-Emitter Voltage


    Original     		BC307/308/309 BC309 BC307 BC308/309 BC307 BC238 datasheet BC239 BC309 308 transistor PDF

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308
    Text: BC307…BC308 PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications 1. Collector 2. Base 3. Emitter TO-92 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol BC307 BC308 Unit Collector Base Voltage -VCBO 50 30


    Original     		BC307. BC308 BC307 BC307 BC308 PNP transistor download datasheet BC308 PDF

    BC307

    Abstract: BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 BC309 bc3078 BC237
    Text: SEMICONDUCTOR BC307/8/9 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. LOW NOISE AMPLIFIER APPLICATION. B C FEATURES A ᴌHigh Voltage : BC307 VCEO=-45V. ᴌLow Noise : BC309 NF=0.2dB Typ. , 3dB(Max.) (VCE=-6V, IC=-0.1mA, f=1kHz).


    Original     		BC307/8/9 BC307 BC309 BC237/238/239. BC307 BC308 BC309 BC308 PNP transistor download datasheet BC308 transistor bc237 bc337 transistor BC309 bc3078 BC237 PDF