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    BC338 TRANSISTOR Search Results

    BC338 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    BC338 TRANSISTOR Price and Stock

    Diotec Semiconductor AG BC338-16

    Bipolar Transistor - TO-92 - 25V - 800mA - NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC338-16
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    • 10000 $0.0208
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    Diotec Semiconductor AG BC338-25

    Bipolar Transistor - TO-92 - 25V - 800mA - NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC338-25
    • 1 -
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    • 10000 $0.0208
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    Diotec Semiconductor AG BC338-40

    Bipolar Transistor - TO-92 - 25V - 800mA - NPN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BC338-40
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    BC338 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC548

    Abstract: BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C
    Text: Small Signal General Purpose Transistors Part No. and Polarity NPN BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 KSP8099 MPSA06 KSP06 MPS8098 KSP8098 MPSA05 KSP05 MPS6602 MPS2222A KSP2222A MPS6513 MPSA10 MPSA20 MPS2222 KSP2222


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    BC547C BC548A BC548B BC548C BC338 BC338-16 BC338-25 BC338-40 BC368 MPS8099 BC548 BC338 BC338-16 BC338-25 BC338-40 BC368 BC547C BC548A BC548B BC548C PDF

    2n2222 -331 transistors

    Abstract: 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132
    Text: Philips Sem iconductors Small-signal Transistors TYPE NUMBER PAGE Index TYPE NUMBER PAGE TYPE NUMBER PAGE BC107 87 BC338 107 BC558C 135 BC107A 87 BC338-16 107 BC559 139 BC107B 87 BC338-25 107 BC559A 139 BC108 87 BC338-40 107 BC559B 139 BC108A 87 BC368 111


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    BC107 BC107A BC107B BC108 BC108A BC108B BC108C BC109 BC109B BC109C 2n2222 -331 transistors 2N2222A 331 2n2222 -331 2n2222 a 331 2n2222 331 transistors JA101P 2n2222 331 2n3904 331 BC876 bd131 bd132 PDF

    BC337 noise

    Abstract: BC327 Q1 BC337 sot23 BC327 sot23 Transistor BC327 Q1 bc557c BC549B BC327 SOT 23 bc558b equivalent 2N4401 surface mount
    Text: SMALL SIGNAL BIPOLAR TRANSISTORS VCEO Volt Low Noise 30 Switching 25 30 40 Leaded TO-92 NPN BC549B BC549C 2N4124 BC338-16 BC338-25 BC338-40 BC548A BC548B BC548C 2N3904 2N4401* MPS2222A* BC547A BC547B BC547C Package Surface Mount Device SOT-23 PNP NPN PNP


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    BC549B BC549C 2N4124 OT-23 BC328-16 BC328-25 BC328-40 BC558A BC558B BC558C BC337 noise BC327 Q1 BC337 sot23 BC327 sot23 Transistor BC327 Q1 bc557c BC549B BC327 SOT 23 bc558b equivalent 2N4401 surface mount PDF

    BC337 pnp transistor datasheet

    Abstract: transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC327 BC328 BC337-16
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


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    BC337-xBK BC338-xBK UL94V-0 BC337 BC338 25plement BC327 BC328 BC337 pnp transistor datasheet transistor bc337 npn BC337 BC337-25 PNP transistor download datasheet NPN general purpose transistor BC337 transistor BC337-16 10D3 BC328 BC337-16 PDF

    bc337 pin out diagram

    Abstract: bc337 BC337 figure BC33740 BC337-40 BC337-16 bc338-25 BC-337-16 BC337 pin out BC337-25
    Text: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25 Vdc Collector −Base Voltage VCBO 50 30 Vdc Emitter −Base Voltage


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    BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 BC337/D bc337 pin out diagram BC337 figure BC33740 BC337-40 BC337-16 BC-337-16 BC337 pin out BC337-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Transistors Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222


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    BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 PDF

    BC337

    Abstract: bc337 pin out diagram BC33 7-25 BC337 figure BC338-25 BC33x bc33725g BC33 BC337G BC337RL1G
    Text: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Packages are Available* MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector − Emitter Voltage VCEO 45 25 Vdc


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    BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 BC337/D bc337 pin out diagram BC33 7-25 BC337 figure BC338-25 BC33x bc33725g BC33 BC337G BC337RL1G PDF

    bc337 pin out diagram

    Abstract: BC337 BC337 figure bc337-25 bc338-25 BC33740 BC337 pin out BC337-16 bc337-40 BC337 typical application
    Text: BC337, BC337−16, BC337−25, BC337−40, BC338−25 Amplifier Transistors NPN Silicon http://onsemi.com Features COLLECTOR 1 • Pb−Free Package is Available* 2 BASE MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector −Emitter Voltage VCEO 45 25


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    BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 BC337/D bc337 pin out diagram BC337 figure bc337-25 BC33740 BC337 pin out BC337-16 bc337-40 BC337 typical application PDF

    Untitled

    Abstract: No abstract text available
    Text: BC337 / BC338 BC337 / BC338 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2006-05-30 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case


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    BC337 BC338 UL94V-0 BC337 BC327 BC328 BC337-16 PDF

    BC337 figure

    Abstract: bc337 BC338-25 BC337-40 BC337-25 BC33825 BC33740 BC337-16 BC338 BC337 hfe
    Text: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO


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    BC337, BC337-16, BC337-25, BC337-40, BC338-25 BC337 BC338 r14525 BC337/D BC337 figure bc337 BC338-25 BC337-40 BC337-25 BC33825 BC33740 BC337-16 BC338 BC337 hfe PDF

    BC337

    Abstract: BC338 BC337 MOTOROLA Motorola BC337
    Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45


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    BC337/D BC337 BC338 BC337 BC338 BC337/D* BC337 MOTOROLA Motorola BC337 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45


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    BC337/D BC337 BC338 BC337 BC338 BC337/D* PDF

    Untitled

    Abstract: No abstract text available
    Text: Small Signal General Purpose Transistors Part No. BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 2N3392 2N3415 2N5172 BC338-16 BC338-25 MPS4124 MPS6514 MPS6515 MPS6560 SS8050 SS8050D 2N3704 2N3705 BC548A BC548B BC548C MPS2222 MPS4123 PN3643


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    BF370 2N2712 2N2714 BC368 BF254 BF494 BF495 BF496 BF959 2N2924 PDF

    BC337 figure

    Abstract: BC337 BC337 NPN transistor datasheet BC338
    Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45


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    BC337/D BC337 BC338 BC337 BC338 BC337/D* BC337 figure BC337 NPN transistor datasheet PDF

    BC337 CBE 1,0 A

    Abstract: BC337-25 CBE BC337-16 CBE BC337 CBE 10D3 BC327 BC328 BC337 BC337-16 BC337-25
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2010-05-27 Power dissipation Verlustleistung ±0.1 CBE min 12.5 4.6 ±0.1 4.6 2 x 1.27 625 mW


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    BC337-xBK BC338-xBK UL94V-0 BC337 BC338 BC327 BC328 BC337-16 BC337 CBE 1,0 A BC337-25 CBE BC337-16 CBE BC337 CBE 10D3 BC328 BC337 BC337-16 BC337-25 PDF

    BC337

    Abstract: BC338 BC337 figure
    Text: ON Semiconductort Amplifier Transistors BC337,-16,-25,-40 BC338,-16,-25,-40 NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO 5.0 Vdc Collector Current — Continuous


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    BC337 BC338 BC337 BC338 r14525 BC337/D BC337 figure PDF

    Untitled

    Abstract: No abstract text available
    Text: BC337-xBK / BC338-xBK BC337-xBK / BC338-xBK General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz NPN NPN Version 2009-05-05 Power dissipation Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92


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    BC337-xBK BC338-xBK UL94V-0 BC337 BC338 BC327 BC328 BC337-16 PDF

    bc337-40 npn transistor

    Abstract: BC337 bc338 complementary BC337A JA02 BC337-40 BC33840
    Text: BC337 BC337A BC338 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 package, prim arily intended fo r use in driver and ou tput stages of audio amplifiers. The BC337, BC337A, BC338 are complementary to the BC327, BC327A and BC328 respectively.


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    BC337 BC337A BC338 BC337, BC337A, BC338 BC327, BC327A BC328 bc337-40 npn transistor bc338 complementary JA02 BC337-40 BC33840 PDF

    bc337

    Abstract: cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716
    Text: ON Semiconductort BC337, BC337-16, BC337-25, BC337-40, BC338-25 Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit Collector–Emitter Voltage VCEO 45 25 Vdc Collector–Base Voltage VCBO 50 30 Vdc Emitter–Base Voltage VEBO


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    BC337 BC338 BC337, BC337-16, BC337-25, BC337-40, BC338-25 226AA) cbc337 BC337 figure BC337-16 BC337-25 BC33740 BC337-40 BC-337 BC338-25 bc33716 PDF

    BC337

    Abstract: TRANSISTOR BC337-25 bc337 transistor datasheet BC338 BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16
    Text: BC337/338 BC337,-16,-25,-40 TRANSISTOR NPN BC338, -16,-25,-40 FEATURES Power dissipation TO-92 PCM: 0.625 W (Tamb=25℃) 1. COLLECTOR Collector current ICM: 0.8 A Collector-base voltage BC337 50 V VCBO: BC338 30 V Operating and storage junction temperature range


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    BC337/338 BC337 BC338, BC338 BC337 BC338 TRANSISTOR BC337-25 bc337 transistor datasheet BC337 NPN transistor datasheet TRANSISTOR bc337 Bc337 npn transistor BC337 hfe BC337-16 transistor BC337-16 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors BC337,-16,-25,-40 TRANSISTOR NPN TO-92 BC338, -16,-25,-40 FEATURES Power dissipation 1. COLLECTOR PCM: 0.625 2. BASE W (Tamb=25℃) 3. EMITTER Collector current 0.8 A ICM: Collector-base voltage BC337 50 V VCBO: BC338 30


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    BC337 BC338, BC338 BC337 BC338 100mA PDF

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


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    BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT PDF

    CBC337

    Abstract: BC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 BC338 bc337-40 le
    Text: MOTOROLA Order this document by BC337/D SEMICONDUCTOR TECHNICAL DATA A m plifier Transistors NPN Silicon BC337,- 16,-25,-40 BC338,- 16,-25,-40 COLLECTOR 1 EMITTER MAXIMUM RATINGS Rating Symbol BC337 BC338 Unit C o lle c to r-E m itte r Voltage VCEO 45 25 Vdc


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    BC337/D BC337 BC338 O-226AA) CBC337 BC337 figure MOTOROLA bc338-40 BC337 MOTOROLA NPN bc338 bc337-40 le PDF

    BC358

    Abstract: BC327 BC328 BC337 BC338
    Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,


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    BC337, BC338 BC327, BC328 O-92F BC337 625mW BC358 BC327 PDF