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    BC373 TRANSISTOR Search Results

    BC373 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BC373 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC373RL1G

    Abstract: BC373R BC372 BC372G BC373 BC373RL1
    Text: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage


    Original     		BC372, BC373 BC372 BC372/D BC373RL1G BC373R BC372 BC372G BC373 BC373RL1 PDF

    BC373RL1G

    Abstract: BC373 BC372 BC372G BC373G BC373RL1 BC373ZL1 BC373ZL1G BC373R
    Text: BC372, BC373 High Voltage Darlington Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 BASE 2 MAXIMUM RATINGS Rating Symbol Collector −Emitter Voltage Value Unit VCEO BC372 BC373 Collector −Base Voltage


    Original     		BC372, BC373 BC372 BC372/D BC373RL1G BC373 BC372 BC372G BC373G BC373RL1 BC373ZL1 BC373ZL1G BC373R PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector- Emitter Voltage VCES 100 80 Vdc Collector-Base Voltage v CBO 100 80 Vdc Emitter-Base Voltage


    OCR Scan     		BC372 BC373 BC373 PDF

    bc373

    Abstract: BC372
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating C ollector-E m itter Voltage Symbol BC372 BC373 80 Vdc 80 Vdc VCES 100 C ollector-B ase Voltage VCBO 100 E m itte r-B a se Voltage


    OCR Scan     		BC372 BC373 BC372 bc373 PDF

    bc373 equivalent

    Abstract: BC372 equivalent BC237 JC 201 SC
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage VCES


    Original     		BC372 BC373 226AA) BC373 Case218A MSC1621T1 MSC2404 MSD1819A MV1620 bc373 equivalent BC372 equivalent BC237 JC 201 SC PDF

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector −Emitter Voltage VCES 100 80 Vdc Collector −Base Voltage VCBO 100 80 Vdc Emitter −Base Voltage VEBO 12 Vdc Collector Current — Continuous


    Original     		BC372 BC373 BC373 O-226AA) PDF

    BC272

    Abstract: No abstract text available
    Text: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous


    Original     		BC372 BC373 BC373 226AA) BC272 PDF

    BC372

    Abstract: BC373
    Text: BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 2 Vdc Collector Current — Continuous


    Original     		BC372 BC373 226AA) r14525 BC372/D BC372 BC373 PDF

    bc272

    Abstract: BC372 BC373 DSA0011025
    Text: ON Semiconductort BC372 BC373 High Voltage Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector–Emitter Voltage VCES 100 80 Vdc Collector–Base Voltage VCBO 100 80 Vdc Emitter–Base Voltage VEBO 12 Vdc Collector Current — Continuous


    Original     		BC372 BC373 226AA) r14525 BC372/D bc272 BC372 BC373 DSA0011025 PDF

    BC372

    Abstract: BC373
    Text: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage


    Original     		BC372/D BC372 BC373 226AA) BC372/D* BC372 BC373 PDF

    TRANSISTOR 318

    Abstract: Transistor BC373 BC373 BC372 BC373 TRANSISTOR bc372 transistor BC3735 BC372-5 T092 bc3725
    Text: BC372 BC373 NPN SILICON HIGH VOLTAGE . . . designed foruserelay DAR LINGTON driver and all inductive load applications. . High Collector-Emitter BVCES Breakdown Voltage 100 V at 100 PA for BC372 -80 V at 100 VA for BC373 ● High Current gain lc- . 100/mAdc,


    Original     		BC372 BC373 100/mAdc, 16uOOO) BC372, BC372-18, BC373-18 BC372-5, TRANSISTOR 318 Transistor BC373 BC373 BC372 BC373 TRANSISTOR bc372 transistor BC3735 BC372-5 T092 bc3725 PDF

    BC373

    Abstract: transistors BC372 BC372
    Text: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 BASE 2 1 2 EMITTER 1 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit Collector – Emitter Voltage


    Original     		BC372/D BC372 BC373 226AA) BC372/D* BC373 transistors BC372 BC372 PDF

    BC373

    Abstract: BC372 TO226AA
    Text: MOTOROLA Order this document by BC372/D SEMICONDUCTOR TECHNICAL DATA High Voltage Darlington Transistors BC372 BC373 NPN Silicon COLLECTOR 3 EMITTER 1 MAXIMUM RATINGS Rating Symbol BC372 BC373 Unit C o lle c to r-E m itte r Voltage VCES 100 80 Vdc C o lle c to r-B a s e Voltage


    OCR Scan     		BC372/D BC372 BC373 O-226AA) TO226AA PDF

    Transistors nd RR

    Abstract: 8C372
    Text: BC372 BC373 M A X IM U M R A T IN G S Symbol 8C372 BC373 C o lle ctor-E m itter Voltage VCES 100 80 Vdc C ollector-Base Voltage V CB O 100 80 Vdc Em itter-Base Voltage Rating Unit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 Vdc C ollector C urrent — C ontinuous


    OCR Scan     		BC372 BC373 8C372 BC373 O-226AA) BC372, Transistors nd RR PDF

    Untitled

    Abstract: No abstract text available
    Text: BC373-16 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.10k


    Original     		BC373-16 Freq100M PDF

    Untitled

    Abstract: No abstract text available
    Text: BC373-40 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.60k


    Original     		BC373-40 Freq100M PDF

    Untitled

    Abstract: No abstract text available
    Text: BC373 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60 h(FE) Min. Current gain.10k


    Original     		BC373 Freq100M PDF

    BC372

    Abstract: bc373 BC373-25 BC373-16 to 92 case BC 372
    Text: MOT ORO LA SC 12E D I t3b72SM QGÔSÔ53 1 | X S TR S/R F 7 BC372, -16, -25, -40 BC373, -16, -25 M A X IM U M RATINGS BC 373 U nit 100 80 Vdc 100 80 Vd c Sym bol BC 372 Collector-Emitter Voltage VC E O Collector-Base Voltage VCBO Em itter-Base Voltage R a tin g


    OCR Scan     		BC370 b3b7E54 BC372, BC373, Tj-25C: BC372 bc373 BC373-25 BC373-16 to 92 case BC 372 PDF

    2904 kd

    Abstract: No abstract text available
    Text: BC372 BC373 M AXIM UM RATINGS Symbol BC 372 BC 3 73 Collector-Emitter V oltage Rating VCES 100 80 Vdc C ollector-Base V oltage VCBO 100 80 V dc Em itter-Base V oltage U nit CASE 29-04, STYLE 1 TO-92 TO-226AA vebo 12 V dc Collector Current — C o n tin u o u s


    OCR Scan     		BC372 BC373 O-226AA) 2904 kd PDF

    B0679

    Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52


    Original     		BST52 BSP52 MPSA28 2S01698 2S01697 2S01699 BC879 B0679 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879 PDF

    MPS3904

    Abstract: 2N5087 2N5088 2N5089 BC550C BC560C MPS6521 MPS6523 MPSA18 MPS-A63
    Text: ON Semiconductor Selector Guide – Discrete Devices Plastic–Encapsulated Transistors continued Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity hFE @ IC NPN PNP V(BR)CEO Volts Min Max mA 250 380 500 100 350 450 300 800 800 — 300 —


    Original     		226AA BC550C MPSA18 MPS3904 2N5088 2N5089 MPS6521 2N5087 BC560C MPS6523 MPS3904 2N5087 2N5088 BC550C BC560C MPS6521 MPS6523 MPSA18 MPS-A63 PDF

    TO226AA

    Abstract: 226AA
    Text: Bipolar Transistors Low Noise and Good hFE Linearity NPN − BC550C PNP V BR CEO IC mA Max Min Max hFE fT MHz Min NF dB Max 2N5087 50 50 250 800 40 2.0 BC560C 45 100 380 800 250 (Typ) 2.5 MPSA18 − 45 200 500 − 100 1.5 2N5088 − 30 50 350 − 50 3.0 2N5089


    Original     		BC550C 2N5087 BC560C MPS6523 MMBT5087LT1 MPSA18 2N5088 2N5089 MPS6521 MMBT2484LT1 TO226AA 226AA PDF

    MPSA25

    Abstract: BC517 CBE 2N6426 2N6427 BC372 BC373 BC617 BC618 MPSA12 MPSA13
    Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued Darlington Transistors (TO-92) Darlington amplifiers are cascade transistors used in applications requiring very high gain and input impedance. These devices have monolithic construction. Absolute M ax. Rating at 2 5 °C


    OCR Scan     		BC372 BC373 BC617 BC618 MPSA25 MPSA76 MPSA26 MPSA77 MPSA27 MSD6100 MPSA25 BC517 CBE 2N6426 2N6427 MPSA12 MPSA13 PDF

    BC517 "cross reference"

    Abstract: 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent
    Text: Philips Semiconductors Small-signal Transistors and Diodes Cross Reference Transistors PHILIPS GA TRANSISTORS CROSS REFERENCE COMPETITOR TYPE NUMBER COMPETITOR TYPE NUMBER PHILIPS-TYPE-No. PHILIPS-TYPE-No. 2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774


    Original     		2N2925 ED1402D 2SA1759 PXTA92 2N3903 2N3904 2SA1774 2PA1774Q BC517 "cross reference" 2n5401 2n3904 bc557 cross reference BC546 "cross reference" 2N5088 Cross Reference PMBT2369 2n2925 cross reference BC337 BC547 bc548b cross reference MPSa06 equivalent PDF