bc517
Abstract: BC517 data sheet transistor BC517
Text: SEMICONDUCTOR BC517 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 816 1 2 K BC517 2. Marking 3 4 No. 1998. 6. 23 Item Marking Description Device Name BC517 BC517 Lot No. 816 8 Year 0~9 : 1900~1999 16 Week 16 : 16th Week KEC K KEC CORP.
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BC517
bc517
BC517 data sheet
transistor BC517
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bc517
Abstract: StR 40000 or transistor transistor BC517
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of 1997 Apr 23 1999 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor BC517 FEATURES PINNING • High current max. 500 mA
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M3D186
BC517
BC516.
MAM302
SCA63
115002/00/04/pp8
bc517
StR 40000 or transistor
transistor BC517
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bc517
Abstract: str 6707 datasheet BC517 data sheet npn darlington StR 40000 BC516 BP317 James
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC517 NPN Darlington transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23 Philips Semiconductors Product specification NPN Darlington transistor
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M3D186
BC517
BC516.
MAM302
SCA53
117047/00/03/pp8
bc517
str 6707 datasheet
BC517 data sheet
npn darlington
StR 40000
BC516
BP317
James
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PDF
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BC517
Abstract: BC517 model file BC517 data sheet
Text: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C
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BC517
226AA)
r14525
BC517/D
BC517
BC517 model file
BC517 data sheet
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BC517 data sheet
Abstract: transistor BC517 BC517
Text: BC517 NPN Silicon Darlington Transistor Collector Base Emitter TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCES 30 V Emitter Base Voltage
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BC517
BC517 data sheet
transistor BC517
BC517
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bc517
Abstract: transistor BC 157 BC517G BC517RL1 BC517RL1G BC517ZL1 BC517ZL1G BC517 model file
Text: BC517 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Collector −Emitter Voltage
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BC517
BC517/D
bc517
transistor BC 157
BC517G
BC517RL1
BC517RL1G
BC517ZL1
BC517ZL1G
BC517 model file
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transistor BC 157
Abstract: BC517 transistor bc 517
Text: BC517 Darlington Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage
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BC517
BC517/D
transistor BC 157
transistor bc 517
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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BC517
Abstract: No abstract text available
Text: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Collector −Emitter Voltage Symbol Value Unit VCES 30 Vdc Collector −Base Voltage VCB 40 Vdc Emitter −Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc
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BC517
O-226AA)
BC517
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Untitled
Abstract: No abstract text available
Text: ON Semiconductort Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C
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BC517
226AA)
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BC517
Abstract: BC517 data sheet
Text: Darlington Transistors BC517 NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCES 30 Vdc Collector–Base Voltage VCB 40 Vdc Emitter–Base Voltage VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C
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BC517
r14525
BC517/D
BC517
BC517 data sheet
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bc517
Abstract: Darlington Transistor BC517 data sheet
Text: SEMICONDUCTOR BC517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. C A B N RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 30 V VEBO 10 V Collector Current IC 500 mA Collector Power Dissipation
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BC517
bc517
Darlington Transistor
BC517 data sheet
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bc517
Abstract: fairchild date code BC517-D74Z BC517_D26Z Transistor B C 458 On semiconductor date Code
Text: BC517 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. TO-92 1 1. Collector 2. Base 3. Emitter Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted
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BC517
BC517
fairchild date code
BC517-D74Z
BC517_D26Z
Transistor B C 458
On semiconductor date Code
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IC2 7805
Abstract: 2N3904 pin diagram 1N4148 BC517 IC1 7805 IC1 LM317 2n3904 2n3906 pic programmer 2N3906 pin diagram 74LS244 diagram
Text: Universität Ulm, Abt. Allg. Elektrotechnik und Mikroelektronik, R. Lares, 07.10.99 PIC Programmer for LPT PC – Circuit Diagram V.2 D2 1N4004 SW1 Power Transf. 15V 4,5W CON2 +13.5V GL1 B80 C1500 3 1 2 IC1 LM317 50mA ff. 230V ~ adjust for C1 2200µF 35V E.
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1N4004
C1500
LM317
100nF
100nF
2N3904
2N3906
IC2 7805
2N3904 pin diagram
1N4148
BC517
IC1 7805
IC1 LM317
2n3904 2n3906
pic programmer
2N3906 pin diagram
74LS244 diagram
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TO226AA
Abstract: 226AA
Text: Bipolar Transistors Low Noise and Good hFE Linearity NPN − BC550C PNP V BR CEO IC mA Max Min Max hFE fT MHz Min NF dB Max 2N5087 50 50 250 800 40 2.0 BC560C 45 100 380 800 250 (Typ) 2.5 MPSA18 − 45 200 500 − 100 1.5 2N5088 − 30 50 350 − 50 3.0 2N5089
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BC550C
2N5087
BC560C
MPS6523
MMBT5087LT1
MPSA18
2N5088
2N5089
MPS6521
MMBT2484LT1
TO226AA
226AA
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MPS3904
Abstract: 2N5087 2N5088 2N5089 BC550C BC560C MPS6521 MPS6523 MPSA18 MPS-A63
Text: ON Semiconductor Selector Guide – Discrete Devices Plastic–Encapsulated Transistors continued Table 2. Plastic–Encapsulated Low–Noise and Good hFE Linearity hFE @ IC NPN PNP V(BR)CEO Volts Min Max mA 250 380 500 100 350 450 300 800 800 — 300 —
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226AA
BC550C
MPSA18
MPS3904
2N5088
2N5089
MPS6521
2N5087
BC560C
MPS6523
MPS3904
2N5087
2N5088
BC550C
BC560C
MPS6521
MPS6523
MPSA18
MPS-A63
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bc517
Abstract: BC517S
Text: MOTOROLA SC XSTRS/R 12E D I F b3 b? 254 GGñ5ñtil BC517, S CASE 29-04, STYLE 17 TO-92 TO-226AA MAXIMUM RATINGS R a tin g Sym bol BC517 U n it VCES 30 Vdc C ollector-B ase V oltage VCB 40 Vdc E m itter-B ase Voltage V eb 10 Vdc C ollector C urren t - Continuous
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BC517,
BC517
O-226AA)
BC517S
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Untitled
Abstract: No abstract text available
Text: J BC 516 BC 517 COMPLEMENTARY SILICON PLANAR EPITAXIAL DARLINGTON TRANSISTORS The BC516 PNP and BC517(NPN) are complementary silicon planar epitaxial darlington transistors designed for preamplifier input stages requiring high input impendence and high gain.
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BC516
BC517
T0-92F
400mA
625mW
0430B
0650B
4300B
6500B
20MHz
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE D bbSBTBl 0DE755b fiOO BC517 l IAPX SILICON PLANAR DARLINGTON TRANSISTOR N-P-N silicon planar darlington transistor in a plastic TO-92 envelope. P-N-P complement is BC516. Q U IC K R E F E R E N C E D A T A v CEO max. 30 V Collector-base voltage open emitter
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0DE755b
BC517
BC516.
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE J> bb53131 0027554 T3fl IAPX b C b lb A SILICON PLANAR DARLINGTON TRANSISTOR P-N-P silicon planar darlington transistor in a plastic TO-92 envelope. N-P-N complement is BC517. Q U IC K R E F E R E N C E D A T A Collector-emitter voltage open base
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bb53131
BC517.
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Untitled
Abstract: No abstract text available
Text: Miniature Transistors TYPE NO. BC146 BC146R BC146Y BC146G BC200 N N N N BC200R BC200Y BC200G BCW83 CL151-4 P P P IC VCE VCE sat max IC rr min N.F. m ai f min max (mA) (V) (V) (mA) (MHz) (dB) (Hz) 20 20 20 20 20 SO 550 80 200 140 350 280 550 50 400 0.2 0.2
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30-15K
BC146
BC146R
BC146Y
BO-92F
O-92A
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors NPN Silicon COLLECTOR 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES 30 Vdc Collector-Base Voltage VCB 40 Vdc Emitter-Base Voltage Veb 10 Vdc Collector- Emitter Voltage Collector Current — Continuous
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BC517
0CH26Ã
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BC200G
Abstract: MT4102 SO 42 P BC146G BCW83 MPSD54 MT 87 BC146 BC146R BC146Y
Text: P O L A R IT Y M in ia tu re Transistors TYPE NO. M A X IM U M R A TIN G S H CASE 'c Pd mW (mA) V CE(SAT) FE •c VCEO (V ) min max (mA) VC E 0 (V) max 'c fr N .F. min max f (M Hz) (dB) (Hz) (V ) (mA) _ _ - — — 150+ 80+ 110+ 150+ 150+ 1.5+ 1.5+ 4 1.5+
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BC146
MT-42
30-15K
BC146R
BC146Y
BC146G
BC200G
MT4102
SO 42 P
BCW83
MPSD54
MT 87
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tr bc548
Abstract: No abstract text available
Text: This I Material tn □ tr t-1 fcH UJ □ Copyrighted □ Pro Electron Bipolar Devices V ’ ces * Device No. Case Style xa tn V CBO V Min V tceo V EBO (V) Min (V) Min 20 5 (continued) *CBO w »FE (nA)@ CB Max (V) h„ 50 85 60 5 500 1A 10 1 1 0.5 375 30K
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