BC557 bc556
Abstract: k 2026 BC557 of transistor bc558 marking AE BC556 BC558 transistor BC557 base collector emitter information of BC558
Text: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 45 Volts 250 mWatts Unit : inch mm DFN 3L 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.021(0.55) • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.0 22 (0.55)
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BC847BFN3
100mA
2002/95/EC
MIL-STD-750,
BC557 bc556
k 2026
BC557
of transistor bc558
marking AE
BC556
BC558
transistor BC557 base collector emitter
information of BC558
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SOT363 6 BC847BS
Abstract: transistor marking 47s BC556 BC557 BC558 BC847BS BC557 bc556 T2 BC558 TRANSISTOR BC556 SOT
Text: BC847BS NPN GENERAL PURPOSE DUAL TRANSISVOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic
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Original
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BC847BS
2002/95/EC
OT-363,
MIL-STD-750,
SOT363 6 BC847BS
transistor marking 47s
BC556
BC557
BC558
BC847BS
BC557 bc556
T2 BC558 TRANSISTOR
BC556 SOT
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transistor marking 47s
Abstract: BC557 BC557 bc556 BC556 BC558 BC847BS information of BC558 SOT-363 marking 47s
Text: BC847BS NPN GENERAL PURPOSE DUAL TRANSISVOLTAGE 45 Volts POWER 150 mWatts FEATURES • General purpose amplifier applications • PNP epitaxial silicon, planar design • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA • Case: SOT-363, Plastic
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Original
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BC847BS
2002/95/EC
OT-363,
MIL-STD-750,
transistor marking 47s
BC557
BC557 bc556
BC556
BC558
BC847BS
information of BC558
SOT-363 marking 47s
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PDF
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47S marking code transistor
Abstract: MARKING dt1 sot363 transistor marking bc557 transistor marking 47s
Text: BC847BS NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volts POWER 150 mWatts SOT-363 Unit:inch mm • General purpose amplifier applications 0.087(2.20) 0.074(1.90) • PNP epitaxial silicon, planar design 0.018(0.45) 0.006(0.15) FEATURES 0.010(0.25) 0.087(2.20)
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Original
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BC847BS
OT-363
OT-363,
MIL-STD-750,
RB500V-40
BC847BS
47S marking code transistor
MARKING dt1 sot363
transistor marking bc557
transistor marking 47s
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Untitled
Abstract: No abstract text available
Text: BC847BS NPN GENERAL PURPOSE DUAL TRANSISTOR POWER 150 mWatts FEATURES 0.018 0.45 0.006(0.15) 45 Volts 0.087(2.20) 0.074(1.90) • General purpose amplifier applications 0.030(0.75) 0.021(0.55) • PNP epitaxial silicon, planar design • Lead free in comply with EU RoHS 2011/65/EU directives
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Original
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BC847BS
2011/65/EU
IEC61249
OT-363,
MIL-STD-750,
2013-REV
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PDF
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transistor marking 47s
Abstract: SOT-363 marking 47s pnp dual transistor marking 47S
Text: BC847BS NPN GENERAL PURPOSE DUAL TRANSISTOR VOLTAGE 45 Volts POWER 150 mWatts SOT-363 Unit:inch mm • General purpose amplifier applications 0.087(2.20) 0.074(1.90) • PNP epitaxial silicon, planar design 0.018(0.45) 0.006(0.15) FEATURES 0.010(0.25) 0.087(2.20)
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Original
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BC847BS
OT-363
OT-363,
MIL-STD-750,
transistor marking 47s
SOT-363 marking 47s
pnp dual transistor marking 47S
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS VOLTAGE CURRENT 45 Volts 250 mWatts DFN 3L FEATURES Unit:inch mm • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.022(0.55) 0.017(0.45) • Collector current IC = 100mA • /
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Original
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BC847BFN3
100mA
MIL-STD-750,
RB500V-40
BC847BFN3
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PDF
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BC556 panjit
Abstract: No abstract text available
Text: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS 32: 5 45 Volts 250 mWatts DFN 3L Unit:inch(mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.022(0.55) 0.017(0.45)
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Original
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BC847BFN3
100mA
2002/95/EC
IEC61249
MIL-STD-750,
2012-REV
BC556 panjit
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PDF
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ic marking code pk
Abstract: No abstract text available
Text: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS CURRENT 45 Volts 250 mWatts DFN 3L Unit:inch mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.022(0.55) 0.017(0.45)
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Original
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BC847BFN3
100mA
MIL-STD-750,
RB500V-40
BC847BFN3
ic marking code pk
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PDF
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Untitled
Abstract: No abstract text available
Text: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS 32: 5 45 Volts 250 mWatts DFN 3L Unit:inch(mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.022(0.55) 0.017(0.45)
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Original
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BC847BFN3
100mA
2011/65/EU
IEC61249
MIL-STD-750,
2012-REV
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PDF
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marking code transistor ND
Abstract: No abstract text available
Text: BC847BFN3 NPN GENERAL PURPOSE TRANSISTORS 32: 5 45 Volts 250 mWatts DFN 3L Unit:inch(mm 0.042(1.05) 0.037(0.95) FEATURES 0.026(0.65) 0.022(0.55) • General purpose amplifier applications • NPN epitaxial silicon, planar design 0.022(0.55) 0.017(0.45)
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Original
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BC847BFN3
100mA
2002/95/EC
IEC61249
MIL-STD-750,
2012-REV
marking code transistor ND
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PDF
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KF6N60
Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION
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USFB053
USFB13
USFB13A
USFB13L
USFB14
USFZ10V
USFZ11V
USFZ12V
USFZ13V
USFZ15V
KF6N60
2SK3850 equivalent
KF9N25
KF7N50
MDF10N65b transistor
PANASONIC ZENER
Kf10n60
KIA278R12PI equivalent
kid65003ap equivalent
kia578r05
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STF12A80
Abstract: BSTC1026 BSTD1046 BTB04-600SAP STF6A80 BSTD1040 TO510DH BSTC1040 TO812NJ BTB15-700B
Text: Cross Reference For the most up to date cross reference, go to the product portal: Manufacturer type number Manufacturer Philips type number Page number Manufacturer type number Manufacturer
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02CZ10
02CZ11
02CZ12
02CZ13
02CZ15
02CZ16
02CZ18
02CZ2
02CZ20
STF12A80
BSTC1026
BSTD1046
BTB04-600SAP
STF6A80
BSTD1040
TO510DH
BSTC1040
TO812NJ
BTB15-700B
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