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    BC637 TRANSISTOR Search Results

    BC637 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    BC637 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BC639

    Abstract: BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050
    Text: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC637 BC639 BC637 BC639 Emitter - Base Voltage


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    BC637, BC639, BC639-16 BC637 BC639 BC637/D BC639 BC639-16 BC639G BC63 BC639 pin details BC637G BC639RL1G BC637 BC637RL1G bc637 050 PDF

    bc639

    Abstract: BC63x BC639-16ZL1 BC637
    Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage BC635 BC637 BC639 Collector-Base Voltage BC635 BC637


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    BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC63x BC639-16ZL1 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC637, BC639, BC639-16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Symbol Rating Collector - Emitter Voltage BC637 BC639 Collector - Base Voltage BC637 BC639 Emitter - Base Voltage


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    BC637, BC639, BC639-16 BC637 BC639 BC637/D PDF

    BC639

    Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050
    Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector-Base Voltage 45 60 80 1 EMITTER VCBO BC635 BC637 BC639 Emitter-Base Voltage


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    BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639-16 BC639RL1 BC639ZL1 bc637 050 PDF

    bc639

    Abstract: BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1999 Apr 23 2001 Oct 10 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639


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    M3D186 BC635; BC637; BC639 BC636, BC638 BC640. bc639 BC639 data 24825 BC635 application note BC635 BC635-16 BC636 BC637 BC637-16 BC639-10 PDF

    BC639G

    Abstract: BC639 BC639RL1G BC639ZL1G BC63 BC637 BC637G BC639 application note BC639-16ZLT1
    Text: BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features • These are Pb−Free Devices* http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC637 BC639 Collector - Base Voltage Vdc 60 80 1 EMITTER


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    BC637, BC639, BC639-16 BC637 BC639 BC637/D BC639G BC639 BC639RL1G BC639ZL1G BC63 BC637 BC637G BC639 application note BC639-16ZLT1 PDF

    BC639

    Abstract: BC639-16ZLT1 BC63916
    Text: BC635, BC637, BC639, BC639-16 High Current Transistors NPN Silicon http://onsemi.com COLLECTOR 2 MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC635 BC637 BC639 Collector-Base Voltage VCBO 1 EMITTER Vdc 45 60 80 VEBO 5.0 Vdc Collector Current — Continuous


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    BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639-16ZLT1 BC63916 PDF

    BC637

    Abstract: BC639 BC635 BC635-16 BC636 BC637-16 BC638 BC639-10 BC640 bc639 philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of 1997 Mar 12 1999 Apr 23 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639


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    M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC637 BC639 BC635 BC635-16 BC636 BC637-16 BC639-10 BC640 bc639 philips PDF

    BC639 pin details

    Abstract: BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1
    Text: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon Features http://onsemi.com • Pb−Free Package is Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC635 BC637 BC639 Collector-Base Voltage


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    BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 pin details BC639 18 BC635 BC635RL1 BC635ZL1 BC637 BC639 BC639RL1 BC639ZL1 PDF

    BC639 pin details

    Abstract: BC639 application note BC639G BC639 BC639 18 transistor BC639 BC635 BC635RL1 BC63916 BC635ZL1
    Text: BC635, BC637, BC639, BC639−16 High Current Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 2 3 BASE MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value Unit VCEO BC635 BC637 BC639 Collector - Base Voltage


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    BC635, BC637, BC639, BC639-16 BC635 BC637 BC639 BC639 pin details BC639 application note BC639G BC639 BC639 18 transistor BC639 BC635 BC635RL1 BC63916 BC635ZL1 PDF

    bc637 motorola

    Abstract: bc639 motorola bc637 bc639 bc635
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 1 EMITTER MAXIMUM RATINGS Symbol BC635 BC637 BC639 Unit C ollector-E m itter Voltage VCEO 45 60 80 Vdc C ollector-B ase Voltage v CBO 45 60 80 Vdc Rating


    OCR Scan
    BC635 BC637 BC639 BC639 bc637 motorola bc639 motorola PDF

    BC639RL1

    Abstract: BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639
    Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR


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    BC635, BC637, BC639 BC635 BC637 r14153 BC635/D BC639RL1 BC639ZL1 BC635 BC635RL1 BC635ZL1 BC637 BC639 PDF

    BC639

    Abstract: BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1
    Text: BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR


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    BC635, BC637, BC639 BC635 BC637 r14153 BC635/D BC639 BC635 BC635RL1 BC635ZL1 BC637 BC639RL1 BC639ZL1 PDF

    bc639 equivalent

    Abstract: BC639
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors BC635 BC637 BC639 NPN Silicon COLLECTOR 2 3 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO


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    BC635 BC637 BC639 BC639 226AA) bc639 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR BC637 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES 2000. 10. 2 Revision No : 0 1/1


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    BC637 PDF

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR TECHNICAL DATA BC638 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC637. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan
    BC638 BC637. -10mA, -100juA, -10J/A, 150mA --500mA, -50mA --500mA -50mA, BC637 BC638 PDF

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR TECHNICAL DATA BC637 EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT TRANSISTORS. FEATURES • Complementary to BC638. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current


    OCR Scan
    BC637 BC638. 100j/A, 10j/A, 150mA 500mA, 500mA 100MHz BC637 BC638 PDF

    BC635 TRANSISTOR E C B

    Abstract: BC635 BC635-10 BC636 BC637 BC637-10 BC638 BC639 BC640 BC635 application note
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Mar 12 Philips Semiconductors Product specification


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    M3D186 BC635; BC637; BC639 BC636, BC638 BC640. BC635 TRANSISTOR E C B BC635 BC635-10 BC636 BC637 BC637-10 BC639 BC640 BC635 application note PDF

    BC637

    Abstract: No abstract text available
    Text: Transistors BC637 USHA INDIA LTD SWITCHING AND AMPLIFIER APPLICATIONS ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic Symbol Collector Emitter Voltage at R BE = 1Kohm VcER Collector Emitter Voltage VcES Collector Emitter Voltage Emitter Base Voltage


    OCR Scan
    BC637 BC637 PDF

    63516

    Abstract: 635-16 63916 Bc 649
    Text: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Mar 12 Philips Sem iconductors 1999 Apr 23 PHILIPS Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING • High current max. 1 A


    OCR Scan
    BC635; BC637; BC639 BC636, BC640. BC635 115002/00/03/pp8 63516 635-16 63916 Bc 649 PDF

    BC639

    Abstract: No abstract text available
    Text: BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    BC635 BC637 BC639 BC635 BC637 BC639 PDF

    BC637

    Abstract: BC638
    Text: SEMICONDUCTOR BC638 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT TRANSISTORS. B C FEATURES A Complementary to BC637. N E K J SYMBOL RATING UNIT Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO


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    BC638 BC637. -150mA -500mA, -50mA -500mA -50mA, 100MHz BC637 BC638 PDF

    bc639

    Abstract: BC635 TRANSISTOR E C B BC637 BC635 bc639 equivalent C 14M
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B bc639 equivalent C 14M PDF

    bc639

    Abstract: BC637 BC635 BC635 TRANSISTOR E C B
    Text: ST BC635 / BC637 / BC639 NPN Silicon Epitaxial Planar Transistor Switching and amplifier application On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package Weight approx. 0.19g Absolute Maximum Ratings Ta = 25 oC


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    BC635 BC637 BC639 BC635 BC637 bc639 BC635 TRANSISTOR E C B PDF