Untitled
Abstract: No abstract text available
Text: BC846A/BWT1 FM120-M+ THRU BC847A/B/CWT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors BC848A/B/CWT1 SOD-123+ PACKAGE WILLAS Pb Free Product Package outline NPNFeatures Silicon • Batch process design, excellent power dissipation offers
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BC846A/BWT
FM120-M
BC847A/B/CWT1
FM1200-M+
BC848A/B/CWT1
OD-123+
OD-123H
FM120-MH
FM130-MH
FM140-M
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SOT-23
Abstract: TRANSISTOR SMD fr 21 smd transistor ds 65
Text: Formosa MS SMD NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2
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BC846A/B-BC847A/B/C
BC848A/B/C-
BC849B/C-BC850B/C
1000hrs
15min)
15min
20sec
1000cycle
96hrs
SOT-23
TRANSISTOR SMD fr 21
smd transistor ds 65
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Untitled
Abstract: No abstract text available
Text: Formosa MS NPN Transistor BC846A/B-BC847A/B/C BC848A/B/C- BC849B/C-BC850B/C List List. 1 Package outline. 2
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BC846A/B-BC847A/B/C
BC848A/B/C-
BC849B/C-BC850B/C
1000hrs
1000hrs
15min
20sec
1000cycle
96hrs
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Untitled
Abstract: No abstract text available
Text: PC F8 536 PC A8 536 NXP LCD driver PCA8536 and PCF8536 I2C/SPI LCD and PWM LED controller for industrial and automotive applications This advanced, highly integrated LCD controller drives up to eight backplanes, up to 44 segments, and up to 320 elements, and provides an on-chip, 6-channel PWM controller for LED illumination.
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PCA8536
PCF8536
PCA8536)
BC847
BC857
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SOT2305
Abstract: MARKING 1J SOD-123 SOT230 770100
Text: BC86A/BLT1 FM120-M+ BC87A/B/CLT1 THRU BC88A/B/CLT1 FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors %&%&/7 SOD-123+ PACKAGE Pb Free Product WILLAS Package outline Features • Batch process design, excellent power dissipation offers
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BC86A/BLT1
FM120-M
BC87A/B/C
BC88A/B/CLT1
FM1200-M+
OD-123+
OD-123H
FM120-MH
FM130-MH
FM140-MH
SOT2305
MARKING 1J SOD-123
SOT230
770100
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micro transistor 1203
Abstract: MRF18060A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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GSM1805
MRF18060A
MRF18060AS
micro transistor 1203
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transistor motorola 114-8
Abstract: motorola s 114-8 Z9 TRANSISTOR SMD transistor J585 smd wb1 transistor smd wb1 motorola 114-8
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AS
transistor motorola 114-8
motorola s 114-8
Z9 TRANSISTOR SMD
transistor J585
smd wb1 transistor
smd wb1
motorola 114-8
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transistor J585
Abstract: J585 bc847 sot 23 bc847 chip SMD SOT23 cw BC847 smd BC847 SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
transistor J585
J585
bc847 sot 23
bc847 chip
SMD SOT23 cw
BC847 smd
BC847 SOT23
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smd wb1 transistor
Abstract: smd transistor wb1 smd wb1 smd wb2 sot-23 wb2 wb1 sot-23 WB1 SOT23 J585 mosfet smd transistor M3 sot23 J585
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090A
MRF18090AS
smd wb1 transistor
smd transistor wb1
smd wb1
smd wb2
sot-23 wb2
wb1 sot-23
WB1 SOT23
J585 mosfet
smd transistor M3 sot23
J585
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smd transistor M3 sot23
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
smd transistor M3 sot23
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transistor J585
Abstract: transistor smd z8 Z9 TRANSISTOR SMD transistor SMD Z2 BC847 smd
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090B
MRF18090BS
transistor J585
transistor smd z8
Z9 TRANSISTOR SMD
transistor SMD Z2
BC847 smd
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SMD Transistor z6
Abstract: transistor smd z3 smd z5 transistor transistor SMD Z2 smd transistor z4 BC847 SOT-23 PACKAGE 0805 Transistor z1 transistor 6 pin SMD Z2 capacitor 100 micro F transistor z3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060AS Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18060A
MRF18060AR3
MRF18060AS
MRF18060ASR3
GSM1805
SMD Transistor z6
transistor smd z3
smd z5 transistor
transistor SMD Z2
smd transistor z4
BC847 SOT-23 PACKAGE 0805
Transistor z1
transistor 6 pin SMD Z2
capacitor 100 micro F
transistor z3
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smd transistor marking j8
Abstract: smd transistor marking j6 transistor J585 smd transistor marking mf transistor smd z3 smd transistor marking z8
Text: Freescale Semiconductor Technical Data Rev. 6, 12/2004 RF Power Field Effect Transistors MRF18090BR3 MRF18090BSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and EDGE base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18090BR3
MRF18090BSR3
smd transistor marking j8
smd transistor marking j6
transistor J585
smd transistor marking mf
transistor smd z3
smd transistor marking z8
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SMD Transistor z6
Abstract: Transistor z1 smd transistor z4 transistor 6 pin SMD Z2 10 k .5 watts smd resistors MRF18060A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF18060A RF Power Field Effect Transistors MRF18060AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18060ALSR3 Designed for PCN and PCS base station applications with frequencies from MRF18060ASR3 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
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MRF18060A
MRF18060AR3
MRF18060ALSR3
MRF18060ASR3
GSM1805
SMD Transistor z6
Transistor z1
smd transistor z4
transistor 6 pin SMD Z2
10 k .5 watts smd resistors
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SMD Transistor z6
Abstract: 465B BC847 GSM1900 LP2951 MRF18090B MRF18090BS
Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090B/D
MRF18090B
MRF18090BS
MRF18090B
SMD Transistor z6
465B
BC847
GSM1900
LP2951
MRF18090BS
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motorola rf Power Transistor obsolete
Abstract: MRF18060A
Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to
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MRF18060A/D
GSM1805
MRF18060A
MRF18060AS
MRF18060A/D
motorola rf Power Transistor obsolete
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smd wb1 transistor
Abstract: smd wb2 WB1 SOT23
Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090A/D
MRF18090A
MRF18090AS
MRF18090A/D
smd wb1 transistor
smd wb2
WB1 SOT23
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smd transistor t A1 sot-23 npn
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090B/D
MRF18090B
MRF18090BS
MRF18090B/D
smd transistor t A1 sot-23 npn
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H6050
Abstract: Z9 TRANSISTOR SMD BC847 SOT-23 PACKAGE 0805
Text: MOTOROLA Order this document by MRF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090B MRF18090BS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090B/D
MRF18090B
MRF18090BS
H6050
Z9 TRANSISTOR SMD
BC847 SOT-23 PACKAGE 0805
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smd transistor wb1
Abstract: wb1 sot package sot-23
Text: MOTOROLA Order this document by MRF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18090A MRF18090AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090A/D
MRF18090A
MRF18090AS
smd transistor wb1
wb1 sot package sot-23
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smd transistor 927
Abstract: RF NPN POWER TRANSISTOR 3 GHZ 200 watts MRF18060A
Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to
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MRF18060A/D
GSM1805
MRF18060A
MRF18060AS
MRF18060A/D
smd transistor 927
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
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SMD Transistor z6
Abstract: MRF18060A BC847 GSM1800 GSM1805 LP2951 MRF18060 MRF18060AS 465A-04 smd 4-pin
Text: MOTOROLA Order this document by MRF18060A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF18060A MRF18060AS RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications from frequencies up to
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MRF18060A/D
MRF18060A
MRF18060AS
GSM1805
MRF18060A
SMD Transistor z6
BC847
GSM1800
GSM1805
LP2951
MRF18060
MRF18060AS
465A-04
smd 4-pin
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smd mosfet z8
Abstract: BC847 LP2951 MRF18090A MRF18090AS BC847 SOT23
Text: MOTOROLA O rder this docum ent by M RF18090A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18090A M R F18090A S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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MRF18090A/D
465B-02
465C-01
MRF18090A
MRF18090AS
smd mosfet z8
BC847
LP2951
MRF18090AS
BC847 SOT23
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BC847 SOT-23 PACKAGE 0805
Abstract: transistor J585 sot-23 C6 bc847 sot 23 T1BC847 BC847 LP2951 MRF18090B MRF18090BS bc847 chip
Text: MOTOROLA O rder this docum ent by M RF18090B/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M R F18090B M R F18090B S RF P o w e r F ield E ffe c t T ra n s is to rs N-Channel Enhancement-Mode Lateral MOSFETs Designed for GSM and EDGE base station applications from frequencies up
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RF18090
465B-02
465C-01
MRF18090B
MRF18090BS
BC847 SOT-23 PACKAGE 0805
transistor J585
sot-23 C6
bc847 sot 23
T1BC847
BC847
LP2951
MRF18090BS
bc847 chip
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