BCY 58 Search Results

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Part	ECAD Model	Manufacturer	Description	Download	Buy
LM143H/883		Rochester Electronics LLC	Operational Amplifier, 1 Func, 6000uV Offset-Max, BIPolar, MBCY8, METAL CAN, BCY-8

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Central Semiconductor Corp BCY58-IX Trans GP BJT NPN 32V 100mA 3-Pin TO-18 0 - Boxed Product (Development Kits) (Alt: BCY58-IX)
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Avnet Americas	BCY58-IX	Box			2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Central Semiconductor Corp BCY58-VIII Trans GP BJT NPN 32V 100mA 3-Pin TO-18 0 - Boxed Product (Development Kits) (Alt: BCY58-VIII)
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Central Semiconductor Corp BCY58-X PBFREE Transistor GP BJT NPN 32V 100mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: BCY58-X PBFREE)
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Avnet Americas	BCY58-X PBFREE	Box			2,000	1 - 10 - 100 - 1000 - 10000 $1.0282	Buy Now
Mouser Electronics	BCY58-X PBFREE		1,444			1 $2.1 10 $1.74 100 $1.39 1000 $1.06 10000 $0.878	Buy Now
Central Semiconductor Corp BCY58-VIII PBFREE Transistor GP BJT NPN 32V 100mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: BCY58-VIII PBFREE)
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Avnet Americas	BCY58-VIII PBFREE	Box			2,000	1 - 10 - 100 - 1000 - 10000 $0.96418	Buy Now
Mouser Electronics	BCY58-VIII PBFREE		1,865			1 $2.1 10 $1.74 100 $1.39 1000 $0.994 10000 $0.908	Buy Now
Central Semiconductor Corp BCY58-X Trans GP BJT NPN 32V 100mA 3-Pin TO-18 0 - Boxed Product (Development Kits) (Alt: BCY58-X)
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Avnet Americas	BCY58-X	Box			2,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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BCY 58 Datasheets (212)

Part	Manufacturer	Description	Datasheet Type	PDF
BCY58	Philips Semiconductors	NPN switching transistors - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36	Original	PDF
BCY58	Semelab	Bipolar NPN Device in a Hermetically Sealed TO18 Metal Package - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36	Original	PDF
BCY58	STMicroelectronics	LOW NOISE AUDIO AMPLIFIER	Original	PDF
BCY58	Central Semiconductor	BJT: NPN: Silicon Epitaxial Transistor: IC 0.2A	Scan	PDF
BCY58	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF
BCY58	Crimson Semiconductor	Transistor Selection Guide	Scan	PDF
BCY58	Ferranti Semiconductors	Quick Reference Guide 1985	Scan	PDF
BCY58	Ferranti Semiconductors	Metal Can Transistors (Short Form)	Scan	PDF
BCY58	Infineon Technologies	TRANS GP BJT NPN 32V 0.2A 3TO-18	Scan	PDF
BCY58	ITT Semiconductors	Transistors 1980	Scan	PDF
BCY58	Micro Electronics	NPN SILICON PLANAR EPITAXIAL TRANSISTOR - Pol=NPN / Pkg=TO18 / Vceo=32 / Ic=0.2 / Hfe=120-630 / fT(Hz)=125M / Pwr(W)=0.36	Scan	PDF
BCY58	Micro Electronics	Semiconductor Devices	Scan	PDF
BCY58	Micro Electronics	Low Level and General Purpose Amplifiers	Scan	PDF
BCY58	Micro Electronics	Semiconductor Device Data Book	Scan	PDF

BCY58	Motorola	Motorola Transistor Datasheets	Scan	PDF
BCY58	Motorola	The European Selection Data Book 1976	Scan	PDF
BCY58	Motorola	European Master Selection Guide 1986	Scan	PDF
BCY58	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF
BCY58	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
BCY58	Unknown	Transistor Replacements	Scan	PDF

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BCY 58 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
65e7 Abstract: BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 Q60203-Y58-G BCY 65 Q60203-Y59-J Text: BCY 58, BCY 59, BCY 65 E ~ 2 N 2483 NPN Transistors fo r AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case 18 A 3 DIN 41 876 (TO -18). The collector is electrically connected to the case.	OCR Scan	Q60203-Y58-G Q60203-Y Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K 65-E7 65e7 BCY65 BCY 59 bcy58 59VIII BCY58-VIII BCY59 BCY 65	PDF
TRANSISTOR A104 Abstract: BCY59C BCY 85 A104 BCY58 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15 Text: MICRO GENERAL DESCRIPTION : BCY 58 BCY 59 MECHANICAL OUTLINE The BCY 58 and BCY 59 are NFN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general	OCR Scan	BCY58 Ic-10â R2-700ohm TRANSISTOR A104 BCY59C BCY 85 A104 Transistor BCY58 BCY59D A104 transistor BCY 68 CEB15	PDF
BCY79 Abstract: bcy 78 bcy 79 Text: BCY 78 BCY 79 PNP SILICON TRANSISTOR TRANSISTOR PNP S ILIC IU M Compì, of BCY 58 and BCY 59 • Switching and amplifier Commutation e t am plification -3 2 V BCY 78 v CEO -4 5 V BCY 79 'c - 2 0 0 mA M a xim u m pow er dissipation Case TO-18 — See outline drawing CB-6 on last pages	OCR Scan	i-10mA 990i2, BCY79 bcy 78 bcy 79	PDF
BCY 59 Abstract: BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58 Text: N P N -Transistoren fü r N F -V o r- und T re ib erstu fen sow ie S ch alteran w en dungen - BCY 58 BCY 59 BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium -Planar-Transistoren im Gehäuse 18 A 3 DIN 41 876 T O -1 8 . Der Kollektor ist m it dem Gehäuse elektrisch ver	OCR Scan	Q60203- BCY 59 BCY 12 BCY58X BCY 85 BCY59 BCY59X BCY58 BCY58-VIII Ucesat BCY 58	PDF
bcy580 Abstract: BCY590 transistor h21e SCHEMA BCY59 BCY 59 Text: *BCY 58 BCY59 NPN SILICON TRANSISTOR TRANSÌSTOR NPN S ILIC IU M Compì, of BCY 78 and BCY 79 Preferred device Dispositif recommandé • For switching and amplifier - Pour com m utation et am plification V CEO 32 V 45 V BCY 58 •c 200 mA BCY 59 Maximum power dissipation	OCR Scan	BCY59 lB2ai10mA bcy580 BCY590 transistor h21e SCHEMA BCY59 BCY 59	PDF
BCY 68 Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59 Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors	OCR Scan	23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 68 0431I BCY68 BCY 59	PDF
BCY59 Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors	OCR Scan	23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 85 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G	PDF
A404 Abstract: No abstract text available Text: BCY 58 BCY 59 GENERAL DESCRIPTION i The BCY 58 and BCY 59 are NPN silic o n planar e p ita x ia l tra n s is to r. I t featu res low satu ratio n voltage and high gain. I t i s intended for use as audio frequency am p lifier, magnetic core d riv er and general	OCR Scan	390aW 390mW -65eC 200mA TA-150 A404	PDF
1B57 Abstract: BCY78 BCY79 Text: SILICON PLANAR PNP BCY78 BCY79 LO W -N O IS E A U D IO A M P L IF IE R S The BCY 78 and BCY 79 are silicon planar epitaxial PNP transistors in Jed ecT O -18 metal case. They are designed fo r use in audio driver and low -noise in p u t stages. The com plem entary NPN types are respectively the BCY 58 and BCY 59.	OCR Scan	BCY78 JedecTO-18 G-1B57 BCY79 G-1860 1B57 BCY78 BCY79	PDF
BCY792 Abstract: bcy 79 Q62702-C327 BCY78 BCY77 BCY 78 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 78-IX Text: 5SC T> m fi23SbOS D00432S 7 « S I E G r . PNP Silicon Planar Transistors BCY77 D _BCY78 BCY 79 25C 04325 SIEMENS A K T I E N 6 E S E L L SCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are	OCR Scan	23Sb05 QQ0432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J BCY792 bcy 79 BCY78 BCY77 BCY 78 78-IX	PDF
BCY77 Abstract: BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 BCY78 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in	OCR Scan	BCY77, BCY79 BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G BCY77 BCY79 BCY 791x zr 4.7v bcy 78 Q62702-C327 Q62702-C327-V1 Transistor 78 L 05 1Zv transistor	PDF
1w200 Abstract: No abstract text available Text: MICRO GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar epitaxial transistor. It features low saturation voltage and high gain. It is intended for use as audio frequency amplifier, magnetic core driver and general purpose industrial applications.	OCR Scan	BCY58 BCY59 390aW tof20G 200mA IG-10Cte* 1w200	PDF
BCY77VII Abstract: BCY78X BCY79 BCY 791x BCY77VIII BCY77 BCY78 Q62702-C327-V1 1Zv transistor Text: BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY 77, BCY 78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 TO-18 . The collector is electrically connected to the case. The transistors are of particular use in low-noise AF pre- and driver stages as well as in	OCR Scan	BCY79 BCY77, BCY78 Q62702-C327-V1 Q62702-C 327-V2 327-V3 Q60203-Y78-G Q60203-Y78-H BCY77VII BCY78X BCY79 BCY 791x BCY77VIII BCY77 Q62702-C327-V1 1Zv transistor	PDF
Q62702-C327 Abstract: Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792 Text: 5SC D • a23SbQS 0Q0432S 7 « S I E G r PNP Silicon Planar Transistors _ SIEMENS AKTIENGESELLSCHAF . BCY77 25C 04325 D ;_ B£ I ? S BCY79 BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are	OCR Scan	53SbOS G00432S Q62702-C327 Q62702-C327-V1 Q62702-C327-V2 Q62702-C327-V3 Q60203-Y78 Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J Q62702-C327 Q62702-C327-V2 bcy77 K1754 C327 Q62702-C327-V1 Q62702-C327-V3 78-IX Q60203-Y78-H BCY792	PDF

tfk 731 Abstract: N100700 bcy 79 BCY58 BCY 65 BCY 59 Text: BCY 58 • BCY 59 Silizium-NPN-Epitaxial-Planar-Transistoren Silicon NPN Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W 0 Power dissipation 1 W	OCR Scan		PDF
BCY59IX Abstract: bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii Text: MOTORCLA SC XSTRS/R IE E D I F b3b?2S4 00flt.4bfc, T T-M-Äl BCY58 -VII, -Vili, -IX, -X BCY59-VII, -Vili, -IX, -X M A X IM U M R A T IN G S Sym bol BCY 58 BCY 59 Collector-Emitter Voltage VC E O 32 45 Vdc Collector-Emitter Voltage R B E = 10 O hm s VcES	OCR Scan	00flt BCY58 BCY59-VII, BCY59, BCY58/BCY59) BCY59IX bcy59 motorola bcy59 BCY59X bcy58-ix bcy58-vii	PDF
BCY59 Abstract: BCY58 BcY591 Text: BCY58 BCY59 SILICON PLANAR NPN LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon planar epitaxial IMPN transistors in Jledec T O -1 8 metal case. They are intended fo r use in audio in p u t stages, driver stages and low-noise in put stages. The com plem entary PNP types are respectively the BCY 78 and !BCY 79.	OCR Scan	BCY58 BCY58 BCY59 BCY59 BcY591	PDF
BCY79 Abstract: BCY78 bcy 78 bcy 79 Text: BCY78 BCY 79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The B C Y 78 and B C Y 79 are silicon planar epitaxial P N P transistors in J e d e c T O - 1 8 metal case. T h e y are designed fo r use in audio driver and lo w -n oise in p u t stages. The com plem entary N P N types are respectively the B C Y 58 and B C Y 59.	OCR Scan	BCY78 BCY79 JedecTO-18 -10mA BCY79 bcy 78 bcy 79	PDF
BCY59 Abstract: BCY58 Text: BCY 58 BCY59 SILICON PLANAR NPN LOW-NOISE A UDIO AM PLIFIERS The B C Y 5 8 and B C Y 5 9 are s ilic o n p la n a r e p ita x ia l NPN tran sisto rs in Jedec T O -1 8 m etal case. T he y are in te n de d fo r use in au d io in p u t stages, d riv e r stages and lo w -n o is e in p u t stages.	OCR Scan	BCY58 BCY58 BCY59 BCY59 100Hz	PDF
59VIII Abstract: 79VIII BCY 62 59IX BCY 68 79-IX BCY57 BCY58VII BCY58VIII T018 Text: BHARAT ELEK/SEfllCOND DI 47E D • 14353^0 □□□□013 72? ■ B E L l T '"Zf'OÍ VCE Si Device No VCEO VCBO Volts mm Volts mm V ebo Vofts mm hFE at bias min /max Ic mA VCE Volts 1CM mA max Ptol mW max ICBO <A typ (Sat Volts typ fT MHz typ Cob pF typ	OCR Scan	BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII 79VII 79VIII BFW10 59VIII 79VIII BCY 62 59IX BCY 68 79-IX BCY58VIII T018	PDF
59VIII Abstract: 79-IX BCY 68 BCY58X BCY 62 BFW10 59vii BHARAT elek BCY58VII BCY58VIII Text: BH AR AT E L E K / S E m C O N D DI 47E D • 1 4 3 5 3^ 3 □ □ □□ □1 3 ?B? ■ B E L l T ~ 2 7 '0 t VCE Si V CEO D e vice No VCBO Volts V o lts mm mm V ebo V ofts min hFE Ic V CE i CM at bias min /max mA Volts mA max Ptol mW ICBO »¿A typ max S at	OCR Scan	BCY57 BCY58VII BCY58VIII 59VIII 100min. 78VII 78VIII BCY79VII 79VIII BFW10 59VIII 79-IX BCY 68 BCY58X BCY 62 59vii BHARAT elek BCY58VIII	PDF
Q62702-C327 Abstract: BCY79 BCY 12 C327 78-VIII 79IX 34RR Text: PIMP-Transistoren für rauscharm e NF-Vor- und B C Y 77 Treiberstufen B C Y 78 -B C Y 79 BC Y 77; BC Y 78; BC Y 79 sind epitaktische PNP-Silizium-Planar-Transistoren im Gehäuse 18 A3 DIN 41 876 TO -18 . Der Kollektor ist mit dem Gehäuse elektrisch verbunden. Die	OCR Scan	Q62702- -C327-V1 -C327-V2 -C327-V3 Q60203- -Y78-G -Y78-H Q62702-C327 BCY79 BCY 12 C327 78-VIII 79IX 34RR	PDF
transistor BC 584 Abstract: TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548 Text: 6091788 MICRO ELECTRONICS C ORP 820 0064 5 05 DE § b D T 1 7 f l a QODGbMS 4 \| TYPE NO. POLARITY Low Level and General Purpose Amplifiers H MAXIMUM RATINGS V CE SAT FE Cob N.F. max max (MHz) (pF) (dB) — 200+ 150 150 150 150 2.7+ 4.5 4.5 4.5 6 2 10 10 4	OCR Scan	bDT17fla O-92F to-02 melf-002. transistor BC 584 TRANSISTOR BC 456 Transistor BC 585 transistor BC 583 D 92 02 78.P BFW 10 fet Transistor BFX 41 TRANSISTOR BC 416 b BC583 transistor BC 548	PDF
bc 170 Abstract: BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107 Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors l c = 100mA for general amplifying and switching purposes Common maximum ratings - lc -V e B O 100 mA5 5 V5 Common characteristics (Tamb — 25 C) 300 mW (TO -92)3 300 mW (TO -18)4 Ti P lo t	OCR Scan	100mA) BC108B BC108C. bc 170 BC108C 173C BC174 bc 170 c transistor Bc 540 BC108A BFY19 BC 109 Transistor specification of transistor bc 107	PDF

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BCY 58 Search Results

BCY 58 Result Highlights (1)

BCY 58 Price and Stock

Central Semiconductor Corp BCY58-IX

Central Semiconductor Corp BCY58-VIII

Central Semiconductor Corp BCY58-X PBFREE

Central Semiconductor Corp BCY58-VIII PBFREE

Central Semiconductor Corp BCY58-X

BCY 58 Datasheets (212)

BCY 58 Datasheets Context Search

65e7

TRANSISTOR A104

BCY79

BCY 59

bcy580

BCY 68

BCY59

A404

1B57

BCY792

BCY77

1w200

BCY77VII

Q62702-C327

tfk 731

BCY59IX

BCY59

BCY79

BCY59

59VIII

59VIII

Q62702-C327

transistor BC 584

bc 170