Untitled
Abstract: No abstract text available
Text: NCP2820 Series 2.65 W Filterless Class-D Audio Power Amplifier http://onsemi.com MARKING DIAGRAMS 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL C1 xx A Y WW G • • • • • • • • • • • = AQ for NCP2820 = BD for NCP2820A = Assembly Location
|
Original
|
PDF
|
NCP2820
NCP2820/D
|
Untitled
Abstract: No abstract text available
Text: NCP2820 Series 2.65 W Filterless Class-D Audio Power Amplifier http://onsemi.com MARKING DIAGRAMS 1 9−PIN FLIP−CHIP CSP FC SUFFIX CASE 499AL C1 xx A Y WW G • • • • • • • • • • • • = AQ for NCP2820 = BD for NCP2820A = Assembly Location
|
Original
|
PDF
|
NCP2820
499AL
NCP2820
NCP2820A
NCP2820A
NCP2820/D
|
433T
Abstract: u413 3D2J
Text: 31;~} ;854/ ;<,<0 :0,5,@ 1EBQROEP Z IfX[ mfckX^\ 7;S@B kf 773S@B/ cfX[ Zlii\ek 5@ Z C`\c\Zki`Z jki\e^k_ 7333S Z DJB g\i]fidXeZ\ d\\kj BD i\hl`i\d\ek Z ClXc `e0c`e\ MBA gXZbX^\ Z OfGP Zfdgc`Xek 479=< ,QX ? 58 2070:,5 ,QX ? 58 - Heglk mfckX^\ iXe^\ Jljk Lg\iXk\ SfckX^\
|
Original
|
PDF
|
7333S
48SCB
48SCB
65SCB
7333S
83Gq293Gq/4d
4333J
833SCB
433T
u413
3D2J
|
bcm 4330
Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: NCV73810V2GEVB NCV7381 FlexRay Bus Driver Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Introduction allows users immediately start with the NCV7381 FlexRay Bus Driver. The MCU is preprogrammed with a firmware which provides simple mode control and FlexRay
|
Original
|
PDF
|
NCV73810V2GEVB
NCV7381
NCV7381
EVBUM2037/D
|
BD136
Abstract: BD136G BD136 pin BD140 pnp transistor BD140 application circuits circuits bd136 N BD138G
Text: BD136, BD138, BD140 Plastic Medium Power Silicon PNP Transistor This series of plastic, medium−power silicon PNP transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. http://onsemi.com Features
|
Original
|
PDF
|
BD136,
BD138,
BD140
BD136
BD138
O-225
BD136G
BD136 pin
BD140 pnp transistor
BD140 application circuits circuits
bd136 N
BD138G
|
Untitled
Abstract: No abstract text available
Text: MMFT2N25E Product Preview High Energy Power FET N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast recovery
|
Original
|
PDF
|
MMFT2N25E
MMFT2N25E/D
|
Untitled
Abstract: No abstract text available
Text: MMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • • • • • High Collector−Emitter Sustaining Voltage
|
Original
|
PDF
|
MMJT350T1G
AEC-Q101
OT-223
MMJT350T1/D
|
SMMJT350T1G
Abstract: marking code E3 sot223 306 marking code transistor
Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
|
Original
|
PDF
|
MMJT350T1G,
SMMJT350T1G
AEC-Q101
MMJT350T1/D
marking code E3 sot223
306 marking code transistor
|
MMJT
Abstract: No abstract text available
Text: MMJT350T1G, SMMJT350T1G Bipolar Power Transistors PNP Silicon Bipolar power transistors are designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage −
|
Original
|
PDF
|
MMJT350T1G,
SMMJT350T1G
MMJT350T1/D
MMJT
|
Untitled
Abstract: No abstract text available
Text: MMJT9410 Bipolar Power Transistors NPN Silicon Features • SOT−223 Surface Mount Packaging • Epoxy Meets UL 94 V−0 @ 0.125 in • These Devices are Pb−Free and are RoHS Compliant http://onsemi.com POWER BJT IC = 3.0 AMPERES BVCEO = 30 VOLTS VCE sat = 0.2 VOLTS
|
Original
|
PDF
|
MMJT9410
OT-223
MMJT9410/D
|
Untitled
Abstract: No abstract text available
Text: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
|
Original
|
PDF
|
NSS40301MZ4,
NSV40301MZ4T1G
NSS40301MZ4/D
|
4030p
Abstract: NJV4030PT1G
Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain −
|
Original
|
PDF
|
NJT4030P,
NJV4030PT1G,
NJV4030PT3G
OT-223
AEC-Q101
NJT4030P/D
4030p
NJV4030PT1G
|
NSV40301
Abstract: No abstract text available
Text: NSS40301MZ4, NSV40301MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat NPN Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
|
Original
|
PDF
|
NSS40301MZ4,
NSV40301MZ4T1G
NSS40301MZ4/D
NSV40301
|
|
|
Untitled
Abstract: No abstract text available
Text: NSS40300MZ4 Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e 2 PowerEdge family of low V CE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
|
Original
|
PDF
|
NSS40300MZ4
NSS40300MZ4/D
|
Untitled
Abstract: No abstract text available
Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features NPN TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain −
|
Original
|
PDF
|
NJT4031N,
NJV4031NT1G,
NJV4031NT3G
NJT4031N/D
|
4031N
Abstract: NJV4031NT1G NJV4031NT3G
Text: NJT4031N, NJV4031NT1G, NJV4031NT3G Bipolar Power Transistors NPN Silicon http://onsemi.com Features • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain − = 200 (Min) @ IC = 1.0 Adc = 100 (Min) @ IC = 3.0 Adc
|
Original
|
PDF
|
NJT4031N,
NJV4031NT1G,
NJV4031NT3G
OT-223
AEC-Q101
NJT4031N/D
4031N
NJV4031NT1G
|
4030p
Abstract: No abstract text available
Text: NJT4030P, NJV4030PT1G, NJV4030PT3G Bipolar Power Transistors PNP Silicon http://onsemi.com Features PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS • Collector −Emitter Sustaining Voltage − VCEO sus = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain −
|
Original
|
PDF
|
NJT4030P,
NJV4030PT1G,
NJV4030PT3G
NJT4030P/D
4030p
|
Untitled
Abstract: No abstract text available
Text: NSS40300MZ4, NSV40300MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
|
Original
|
PDF
|
NSS40300MZ4,
NSV40300MZ4T1G
NSS40300MZ4/D
|
Untitled
Abstract: No abstract text available
Text: NSS40300MZ4, NSV40300MZ4T1G Bipolar Power Transistors 40 V, 3.0 A, Low VCE sat PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are surface mount devices featuring ultra low saturation voltage (VCE(sat) and high current gain capability. These are designed
|
Original
|
PDF
|
NSS40300MZ4,
NSV40300MZ4T1G
NSS40300MZ4/D
|
cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Text: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
|
OCR Scan
|
PDF
|
AA113
AA117
AA119
BAV17
BAV18
BAV19
BAV20
BAV21
cqx 87
germanium
AEG Thyristor T 558 F
TDA 2516
bu208
bf506
la 4430
BF963
TDA1086
transistor bf 175
|
2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
|
OCR Scan
|
PDF
|
|
2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
|
OCR Scan
|
PDF
|
2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
|
AC125K
Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T
|
OCR Scan
|
PDF
|
76665N
76889N
MA748PC
MA709PC
jA710PC
A711PC
iA712PC
A723PC
HA741PC
A747PC
AC125K
6AN7
tungsram 3S035T-1
ecc83 application notes
ECL86
DG 7-123
tungsram
AC125UZ
PENTODE pl 508
ot-400 tungsram
|
